NX138BKM [NEXPERIA]
60 V, N-channel Trench MOSFETProduction;
| 型号： | NX138BKM |
| 厂家： | 
Nexperia |
| 描述： | 60 V, N-channel Trench MOSFETProduction |
| 文件： | 总14页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NX138BKM
60 V, N-channel Trench MOSFET
1 September 2020
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3
(SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
Low threshold voltage
•
•
•
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
60
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-20
-
20
V
ID
VGS = 10 V; Tamb = 25 °C
[1]
380
mA
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 380 mA; Tj = 25 °C
-
1.8
2.3
Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Nexperia
NX138BKM
60 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
gate
Simplified outline
Graphic symbol
D
G
S
D
1
2
3
2
source
drain
3
Transparent
top view
G
DFN1006-3 (SOT883)
S
017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
NX138BKM
DFN1006-3
plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; SOT883
1 mm x 0.6 mm x 0.48 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
NX138BKM
6R
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NX138BKM
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Nexperia B.V. 2020. All rights reserved
Product data sheet
1 September 2020
2 / 14
Nexperia
NX138BKM
60 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
60
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-20
20
V
ID
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
-
380
240
1.5
mA
mA
A
-
IDM
Ptot
peak drain current
-
total power dissipation
[2]
[1]
-
380
710
2.8
mW
mW
W
-
Tsp = 25 °C
-
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
Tamb
Tstg
°C
°C
Source-drain diode
IS source current
Tamb = 25 °C
[1]
-
380
mA
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
aaa-032023
aaa-032024
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
-75
0
-75
-25
25
75
125
175
(°C)
-25
25
75
125
175
(°C)
T
T
amb
amb
Fig. 1. Normalized total power dissipation as a
function of ambient temperature
Fig. 2. Normalized continuous drain current as a
function of ambient temperature
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NX138BKM
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Product data sheet
1 September 2020
3 / 14
Nexperia
NX138BKM
60 V, N-channel Trench MOSFET
aaa-032038
10
I
D
(A)
Limit R
= V /I
DS
DSon
D
t
= 10 µs
p
1
t
t
= 100 µs
= 1 ms
p
p
-1
10
10
10
DC; T
= 25 °C;
amb
drain mounting pad 1 cm
DC; T = 25 °C
sp
2
-2
-3
t
t
= 10 ms
p
p
= 100 ms
2
1
10
10
V
(V)
DS
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
©
NX138BKM
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Nexperia B.V. 2020. All rights reserved
Product data sheet
1 September 2020
4 / 14
Nexperia
NX138BKM
60 V, N-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
285
150
40
Max
330
175
45
Unit
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
-
-
-
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
aaa-032026
3
10
Z
duty cycle = 1
0.75
th(j-a)
(K/W)
0.50
0.33
0.20
0.25
0.10
2
10
0.05
0.02
0.01
0
10
10
-3
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-032027
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.50
0.33
2
10
0.25
0.20
0.10
0.05
0.02
0.01
0
10
10
-3
-2
10
-1
10
2
3
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for drain 1 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
NX138BKM
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Nexperia B.V. 2020. All rights reserved
Product data sheet
1 September 2020
5 / 14
Nexperia
NX138BKM
60 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
60
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
0.5
1
1.5
IDSS
IGSS
drain leakage current
gate leakage current
VDS = 60 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 5 V; VDS = 0 V; Tj = 25 °C
VGS = -5 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 380 mA; Tj = 25 °C
VGS = 10 V; ID = 380 mA; Tj = 150 °C
VGS = 5 V; ID = 330 mA; Tj = 25 °C
VGS = 2.5 V; ID = 260 mA; Tj = 25 °C
VDS = 5 V; ID = 380 mA; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
1
µA
µA
µA
µA
µA
nA
nA
Ω
-
10
-10
1
-
-
-
-1
-
500
-500
2.3
4.9
2.9
4.8
-
-
RDSon
drain-source on-state
resistance
1.8
3.9
2.2
2.4
0.7
Ω
Ω
Ω
gfs
forward
S
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = 30 V; ID = 380 mA; VGS = 10 V;
Tj = 25 °C
-
-
-
-
-
-
0.5
0.1
0.1
20
3.1
2
0.7
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
-
-
-
-
VDS = 30 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
Coss
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 30 V; ID = 380 mA; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
7.9
-
-
-
-
ns
ns
ns
ns
8.4
turn-off delay time
fall time
12.5
5.1
Source-drain diode
VSD
source-drain voltage
IS = 380 mA; VGS = 0 V; Tj = 25 °C
-
0.7
1.2
V
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NX138BKM
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Nexperia B.V. 2020. All rights reserved
Product data sheet
1 September 2020
6 / 14
Nexperia
NX138BKM
60 V, N-channel Trench MOSFET
aaa-032028
aaa-032029
-3
-4
-5
-6
0.7
D
(A)
0.6
10
D
I
I
10 V
4.5 V
3.0 V
(A)
0.5
0.4
0.3
0.2
0.1
0
10
2.2 V
min
typ
max
10
10
V
3
= 1.8 V
GS
V
0
1
2
4
0
0.5
1.0
1.5
2.0
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
aaa-032030
aaa-032039
6
12
1.8 V
R
DSon
R
DSon
2.2 V
4
8
T = 150 °C
j
2
0
4
0
2.5 V
3.0 V
4.5 V
V
= 10 V
GS
T = 25 °C
j
0
0.1
0.2
0.3
0.4
0.5
0.6
(A)
0.7
0
1
2
3
4
5
I
D
V
(V)
GS
Tj = 25 °C
ID = 0.3 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
©
NX138BKM
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Nexperia B.V. 2020. All rights reserved
Product data sheet
1 September 2020
7 / 14
Nexperia
NX138BKM
60 V, N-channel Trench MOSFET
aaa-032032
aaa-032040
0.8
2.5
2.0
1.5
1.0
0.5
0
a
I
D
(A)
0.6
0.4
0.2
0
T = 150 °C
j
T = 25 °C
j
0
1
2
3
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS = 5 V
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-032034
aaa-032035
2
2.0
10
V
GSth
(V)
C
(pF)
1.5
max
C
iss
1.0
0.5
0
10
typ
C
C
oss
min
rss
1
-1
10
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 250 μA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
NX138BKM
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Nexperia B.V. 2020. All rights reserved
Product data sheet
1 September 2020
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Nexperia
NX138BKM
60 V, N-channel Trench MOSFET
aaa-032036
10
V
(V)
V
GS
DS
8
I
D
6
4
2
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
0
0
Q
Q
GS
GD
0.2
0.4
0.6
0.8
Q
1
(nC)
G
Q
G(tot)
003aaa508
ID = 0.2 A; VDS = 30 V; Tj = 25 °C
Fig. 15. Gate charge waveform definitions
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-032037
0.8
I
S
(A)
0.6
T = 150 °C
j
0.4
0.2
0
T = 25 °C
j
0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
©
NX138BKM
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Nexperia B.V. 2020. All rights reserved
Product data sheet
1 September 2020
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Nexperia
NX138BKM
60 V, N-channel Trench MOSFET
12. Package outline
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
SOT883
L
L
1
2
b
3
b
e
1
1
e
1
A
A
1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
1
UNIT
A
b
b
D
E
e
e
L
L
1
1
1
max.
0.50
0.46
0.20 0.55 0.62 1.02
0.12 0.47 0.55 0.95
0.30 0.30
0.22 0.22
mm
0.03
0.35 0.65
Note
1. Including plating thickness
REFERENCES
JEDEC
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEITA
03-02-05
03-04-03
SOT883
SC-101
Fig. 18. Package outline DFN1006-3 (SOT883)
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NX138BKM
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Nexperia B.V. 2020. All rights reserved
Product data sheet
1 September 2020
10 / 14
Nexperia
NX138BKM
60 V, N-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of DFN1006-3 (SOT883) package
SOT883
1.3
0.7
R0.05 (20x)
0.35
(2x)
0.9
0.45
0.6 0.7 0.8
0.25
(2x)
0.3 (2x)
0.4 (2x)
0.5 (2x)
0.3
0.4
0.5
occupied area
solder lands
solder resist
solder paste
Dimensions in mm
19-07-10
20-02-25
Issue date
sot883_fr
Fig. 19. Reflow soldering footprint for DFN1006-3 (SOT883)
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NX138BKM
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Product data sheet
1 September 2020
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Nexperia
NX138BKM
60 V, N-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20200901
Data sheet status
Change notice
Supersedes
NX138BKM v.1
Product data sheet
-
-
©
NX138BKM
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Nexperia B.V. 2020. All rights reserved
Product data sheet
1 September 2020
12 / 14
Nexperia
NX138BKM
60 V, N-channel Trench MOSFET
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
15. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
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or problem which is based on any weakness or default in the customer’s
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liability in this respect.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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warranties as to the accuracy or completeness of information included herein
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intended for quick reference only and should not be relied upon to contain
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data sheet shall define the specification of the product as agreed between
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In the event that customer uses the product for design-in and use in
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customer (a) shall use the product without Nexperia’s warranty of the
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Trademarks
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©
NX138BKM
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Nexperia B.V. 2020. All rights reserved
Product data sheet
1 September 2020
13 / 14
Nexperia
NX138BKM
60 V, N-channel Trench MOSFET
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................6
11. Test information..........................................................9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information......................................................13
© Nexperia B.V. 2020. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 1 September 2020
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Product data sheet
1 September 2020
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