NX138BKS [NEXPERIA]

60 V, dual N-channel Trench MOSFETProduction;
NX138BKS
型号: NX138BKS
厂家: Nexperia    Nexperia
描述:

60 V, dual N-channel Trench MOSFETProduction

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NX138BKS  
60 V, dual N-channel Trench MOSFET  
15 June 2016  
Product data sheet  
1. General description  
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88)  
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.  
2. Features and benefits  
Low threshold voltage  
Very fast switching  
Trench MOSFET technology  
ElectroStatic Discharge (ESD) protection > 2 kV HBM  
3. Applications  
Relay driver  
High-speed line driver  
Low-side loadswitch  
Switching circuits  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VDS  
VGS  
ID  
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
-
-
-
60  
V
-20  
-
20  
V
VGS = 10 V; Tamb = 25 °C  
VGS = 10 V; ID = 200 mA; Tj = 25 °C  
[1]  
210  
mA  
Static characteristics (per transistor)  
RDSon  
drain-source on-state  
resistance  
-
2.1  
3.5  
Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2.  
 
 
 
 
 
Nexperia  
NX138BKS  
60 V, dual N-channel Trench MOSFET  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol Description  
Simplified outline  
Graphic symbol  
D2  
D1  
S1  
G1  
D2  
S2  
G2  
D1  
source TR1  
gate TR1  
6
5
4
3
2
3
drain TR2  
source TR2  
gate TR2  
G1  
G2  
1
2
4
TSSOP6 (SOT363)  
5
S1  
S2  
6
drain TR1  
017aaa256  
6. Ordering information  
Table 3. Ordering information  
Type number  
Package  
Name  
Description  
Version  
SOT363  
NX138BKS  
TSSOP6  
plastic surface-mounted package; 6 leads  
©
NX138BKS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
15 June 2016  
2 / 15  
 
 
Nexperia  
NX138BKS  
60 V, dual N-channel Trench MOSFET  
7. Limiting values  
Table 4. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
Per transistor  
VDS  
VGS  
ID  
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
60  
V
-20  
20  
V
VGS = 10 V; Tamb = 25 °C  
VGS = 10 V; Tamb = 100 °C  
VGS = 10 V; Tsp = 25 °C  
Tamb = 25 °C; single pulse; tp ≤ 10 µs  
Tamb = 25 °C  
[1]  
[1]  
-
-
-
-
-
-
-
210  
135  
330  
855  
285  
320  
860  
mA  
mA  
mA  
mA  
mW  
mW  
mW  
IDM  
Ptot  
peak drain current  
total power dissipation  
[2]  
[1]  
Tsp = 25 °C  
Per device  
Tj  
junction temperature  
ambient temperature  
storage temperature  
-55  
-55  
-65  
150  
150  
150  
°C  
°C  
°C  
Tamb  
Tstg  
Source-drain diode  
IS source current  
Tamb = 25 °C  
[1]  
-
170  
mA  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
017aaa123  
017aaa124  
120  
120  
P
I
der  
der  
(%)  
(%)  
80  
80  
40  
40  
0
- 75  
0
- 75  
- 25  
25  
75  
125  
175  
- 25  
25  
75  
125  
175  
T (°C)  
j
T (°C)  
j
Fig. 1. MOSFET transistor: Normalized total power  
dissipation as a function of junction temperature  
Fig. 2. MOSFET transistor: Normalized continuous drain  
current as a function of junction temperature  
©
NX138BKS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
15 June 2016  
3 / 15  
 
 
Nexperia  
NX138BKS  
60 V, dual N-channel Trench MOSFET  
aaa-023329  
1
t
=
p
10 µs  
I
D
(A)  
Limit R  
= V /I  
DS  
DSon  
D
100 µs  
-1  
-2  
-3  
10  
1 ms  
DC; T = 25 °C  
sp  
10 ms  
DC; T  
= 25 °C;  
100 ms  
amb  
drain mounting pad 1 cm  
2
10  
10  
-1  
2
10  
1
10  
10  
V
(V)  
DS  
IDM = single pulse  
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source  
voltage  
8. Thermal characteristics  
Table 5. Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
Rth(j-a)  
thermal resistance  
from junction to  
ambient  
in free air  
[1]  
[2]  
-
-
380  
340  
440  
390  
K/W  
K/W  
Rth(j-sp)  
thermal resistance  
from junction to solder  
point  
-
125  
145  
K/W  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.  
©
NX138BKS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
15 June 2016  
4 / 15  
 
 
Nexperia  
NX138BKS  
60 V, dual N-channel Trench MOSFET  
aaa-023330  
3
10  
duty cycle = 1  
Z
th(j-a)  
(K/W)  
0.75  
0.50  
0.25  
0.33  
0.20  
2
10  
0.10  
0.05  
0.02  
0.01  
0
10  
-3  
10  
-2  
-1  
2
3
10  
10  
1
10  
10  
10  
t
p
(s)  
FR4 PCB, standard footprint  
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
aaa-023331  
3
10  
duty cycle = 1  
Z
th(j-a)  
(K/W)  
0.75  
0.50  
0.33  
0.25  
0.20  
2
10  
0.10  
0.05  
0.02  
0.01  
0
10  
-3  
10  
-2  
-1  
2
3
10  
10  
1
10  
10  
10  
t
p
(s)  
FR4 PCB, mounting pad for drain 1 cm2  
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
©
NX138BKS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
15 June 2016  
5 / 15  
Nexperia  
NX138BKS  
60 V, dual N-channel Trench MOSFET  
9. Characteristics  
Table 6. Characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics (per transistor)  
V(BR)DSS  
VGSth  
drain-source  
breakdown voltage  
ID = 250 µA; VGS = 0 V; Tj = 25 °C  
60  
-
-
V
V
gate-source threshold ID = 250 µA; VDS=VGS; Tj = 25 °C  
voltage  
0.5  
1
1.5  
IDSS  
IGSS  
drain leakage current  
gate leakage current  
VDS = 60 V; VGS = 0 V; Tj = 25 °C  
VGS = 20 V; VDS = 0 V; Tj = 25 °C  
VGS = -20 V; VDS = 0 V; Tj = 25 °C  
VGS = 10 V; VDS = 0 V; Tj = 25 °C  
VGS = -10 V; VDS = 0 V; Tj = 25 °C  
VGS = 5 V; VDS = 0 V; Tj = 25 °C  
VGS = -5 V; VDS = 0 V; Tj = 25 °C  
VGS = 10 V; ID = 200 mA; Tj = 25 °C  
VGS = 10 V; ID = 200 mA; Tj = 150 °C  
VGS = 5 V; ID = 170 mA; Tj = 25 °C  
VGS = 2.5 V; ID = 75 mA; Tj = 25 °C  
VDS = 10 V; ID = 200 mA; Tj = 25 °C  
-
-
-
-
-
-
-
-
-
-
-
-
-
1
µA  
µA  
µA  
µA  
µA  
µA  
µA  
Ω
-
10  
-10  
1
-
-
-
-1  
-
0.3  
-0.3  
3.5  
7.2  
3.8  
5
-
RDSon  
drain-source on-state  
resistance  
2.1  
4.3  
2.2  
2.6  
0.7  
Ω
Ω
Ω
gfs  
forward  
-
S
transconductance  
Dynamic characteristics (per transistor)  
QG(tot)  
QGS  
QGD  
Ciss  
total gate charge  
gate-source charge  
gate-drain charge  
input capacitance  
output capacitance  
VDS = 30 V; ID = 200 mA; VGS = 10 V;  
Tj = 25 °C  
-
-
-
-
-
-
0.5  
0.12  
0.12  
20  
0.7  
nC  
nC  
nC  
pF  
pF  
pF  
-
-
-
-
-
VDS = 30 V; f = 1 MHz; VGS = 0 V;  
Tj = 25 °C  
Coss  
Crss  
3.1  
2
reverse transfer  
capacitance  
td(on)  
tr  
td(off)  
tf  
turn-on delay time  
rise time  
VDS = 30 V; ID = 200 mA; VGS = 10 V;  
RG(ext) = 6 Ω; Tj = 25 °C  
-
-
-
-
8
-
-
-
-
ns  
ns  
ns  
ns  
8
turn-off delay time  
fall time  
13  
5
Source-drain diode (per transistor)  
VSD  
source-drain voltage  
IS = 200 mA; VGS = 0 V; Tj = 25 °C  
-
0.9  
1.2  
V
©
NX138BKS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
15 June 2016  
6 / 15  
 
Nexperia  
NX138BKS  
60 V, dual N-channel Trench MOSFET  
aaa-023332  
aaa-023333  
-3  
-4  
-5  
-6  
0.8  
10  
D
V
= 10 V  
3.5 V  
4.5 V  
GS  
I
D
(A)  
2.5 V  
I
(A)  
0.6  
min  
typ  
max  
10  
2.2 V  
0.4  
0.2  
0
2.0 V  
1.8 V  
10  
10  
0
1
2
3
4
5
0
0.5  
1
1.5  
2
V
(V)  
V
(V)  
DS  
GS  
Tj = 25 °C  
VDS = 5 V  
Tj = 25 °C  
Fig. 6. Output characteristics: drain current as a  
function of drain-source voltage; typical values  
Fig. 7. Sub-threshold drain current as a function of gate-  
source voltage  
aaa-023334  
aaa-023335  
8
8
R
1.8 V  
2.0 V  
2.2 V  
2.5 V  
DSon  
(Ω)  
R
DSon  
(Ω)  
7
6
6
5
4
3
2
1
0
T = 150 °C  
j
4
2
0
T = 25 °C  
j
3 V  
4.5 V  
= 10 V  
V
GS  
0
0.2  
0.4  
0.6  
0.8  
0
5
10  
I
(A)  
V
(V)  
GS  
D
Tj = 25 °C  
ID = 0.2 A  
Fig. 8. Drain-source on-state resistance as a function of Fig. 9. Drain-source on-state resistance as a function of  
drain current; typical values  
gate-source voltage; typical values  
©
NX138BKS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
15 June 2016  
7 / 15  
Nexperia  
NX138BKS  
60 V, dual N-channel Trench MOSFET  
aaa-023336  
aaa-023337  
0.6  
2.5  
2
a
I
D
(A)  
0.4  
1.5  
1
0.2  
T
T
j = 25 °C  
j = 150 °C  
0.5  
0
0
-60  
0
1
2
3
4
0
60  
120  
180  
V
(V)  
T (°C)  
j
GS  
VDS > ID x RDSon  
Fig. 10. Transfer characteristics: drain current as a  
function of gate-source voltage; typical values  
Fig. 11. Normalized drain-source on-state resistance as  
a function of junction temperature; typical values  
aaa-023338  
aaa-023339  
2
2
10  
V
GS(th)  
(V)  
C
(pF)  
max  
typ  
1.5  
1
C
iss  
10  
min  
C
0.5  
0
oss  
C
rss  
1
-1  
10  
2
-60  
0
60  
120  
180  
1
10  
10  
T (°C)  
j
V
(V)  
DS  
ID = 250 μA; VDS = VGS  
f = 1 MHz; VGS = 0 V  
Fig. 12. Gate-source threshold voltage as a function of  
junction temperature  
Fig. 13. Input, output and reverse transfer capacitances  
as a function of drain-source voltage; typical values  
©
NX138BKS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
15 June 2016  
8 / 15  
Nexperia  
NX138BKS  
60 V, dual N-channel Trench MOSFET  
aaa-023340  
10  
V
DS  
V
GS  
(V)  
I
D
8
6
4
2
0
V
V
GS(pl)  
GS(th)  
V
GS  
Q
GS2  
Q
GS1  
Q
Q
GD  
G(tot)  
GS  
Q
003aaa508  
Fig. 15. MOSFET transistor: Gate charge waveform  
definitions  
0
0.2  
0.4  
0.6  
0.8  
Q
1
(nC)  
G
VDS = 30 V; ID = 0.2 A  
Fig. 14. Gate-source voltage as a function of gate  
charge; typical values  
aaa-023341  
0.2  
I
S
(A)  
0.1  
T = 150 ºC  
j
T = 25 ºC  
j
0
0
0.4  
0.8  
1.2  
V
(V)  
SD  
VGS = 0 V  
Fig. 16. Source current as a function of source-drain voltage; typical values  
10. Test information  
t
t
1
2
P
duty cycle δ =  
t
2
t
1
t
006aaa812  
Fig. 17. Duty cycle definition  
©
NX138BKS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
15 June 2016  
9 / 15  
 
Nexperia  
NX138BKS  
60 V, dual N-channel Trench MOSFET  
11. Package outline  
Plastic surface-mounted package; 6 leads  
SOT363  
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1  
index  
A
A
1
1
2
3
c
e
1
b
L
w
M B  
p
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
A
b
p
c
D
e
e
H
L
Q
v
w
y
E
p
1
E
max  
0.30  
0.20  
1.1  
0.8  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.25  
0.15  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC JEITA  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
04-11-08  
06-03-16  
SOT363  
SC-88  
Fig. 18. Package outline TSSOP6 (SOT363)  
©
NX138BKS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
15 June 2016  
10 / 15  
 
Nexperia  
NX138BKS  
60 V, dual N-channel Trench MOSFET  
12. Soldering  
2.65  
solder lands  
solder resist  
0.4 (2×)  
1.5  
2.35  
0.6  
(4×)  
0.5  
(4×)  
solder paste  
0.5  
(4×)  
0.6  
(2×)  
occupied area  
0.6  
(4×)  
Dimensions in mm  
1.8  
sot363_fr  
Fig. 19. Reflow soldering footprint for TSSOP6 (SOT363)  
1.5  
solder lands  
solder resist  
2.5  
0.3  
4.5  
occupied area  
1.5  
Dimensions in mm  
preferred transport  
direction during soldering  
1.3  
1.3  
2.45  
5.3  
sot363_fw  
Fig. 20. Wave soldering footprint for TSSOP6 (SOT363)  
©
NX138BKS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
15 June 2016  
11 / 15  
 
Nexperia  
NX138BKS  
60 V, dual N-channel Trench MOSFET  
13. Revision history  
Table 7. Revision history  
Data sheet ID  
Release date  
20160615  
Data sheet status  
Change notice  
Supersedes  
NX138BKS v.1  
Product data sheet  
-
-
©
NX138BKS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
15 June 2016  
12 / 15  
 
Nexperia  
NX138BKS  
60 V, dual N-channel Trench MOSFET  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Nexperia’s aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of Nexperia.  
14. Legal information  
Right to make changes — Nexperia reserves the right to  
make changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Data sheet status  
Document  
Product  
Definition  
status [1][2] status [3]  
Suitability for use — Nexperia products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of a Nexperia product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. Nexperia and its suppliers accept no liability for  
inclusion and/or use of Nexperia products in such equipment or  
applications and therefore such inclusion and/or use is at the customer’s own  
risk.  
Objective  
[short] data  
sheet  
Development This document contains data from  
the objective specification for product  
development.  
Preliminary  
[short] data  
sheet  
Qualification This document contains data from the  
preliminary specification.  
Product  
[short] data  
sheet  
Production  
This document contains the product  
specification.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
[1] Please consult the most recently issued document before initiating or  
completing a design.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes  
no representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
[2] The term 'short data sheet' is explained in section "Definitions".  
[3] The product status of device(s) described in this document may have  
changed since this document was published and may differ in case of  
multiple devices. The latest product status information is available on  
the Internet at URL http://www.nexperia.com.  
Customers are responsible for the design and operation of their  
applications and products using Nexperia products, and Nexperia  
accepts no liability for any assistance with applications or  
customer product design. It is customer’s sole responsibility to determine  
whether the Nexperia product is suitable and fit for the  
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associated with their applications and products.  
Definitions  
Preview — The document is a preview version only. The document is still  
subject to formal approval, which may result in modifications or additions.  
Nexperia does not give any representations or warranties as to  
the accuracy or completeness of information included herein and shall have  
no liability for the consequences of use of such information.  
Nexperia does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default  
in the customer’s applications or products, or the application or use by  
customer’s third party customer(s). Customer is responsible for doing all  
necessary testing for the customer’s applications and products using Nexperia  
products in order to avoid a default of the applications  
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internal review and subject to formal approval, which may result in  
modifications or additions. Nexperia does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences  
of use of such information.  
and the products or of the application or use by customer’s third party  
customer(s). Nexperia does not accept any liability in this respect.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is  
intended for quick reference only and should not be relied upon to contain  
detailed and full information. For detailed and full information see the  
relevant full data sheet, which is available on request via the local Nexperia  
sales office. In case of any inconsistency or conflict with the  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
short data sheet, the full data sheet shall prevail.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Nexperia and its customer, unless Nexperia and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the Nexperia product  
is deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
Terms and conditions of commercial sale — Nexperia  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. Nexperia hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of Nexperia products by customer.  
Disclaimers  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Limited warranty and liability — Information in this document is believed  
to be accurate and reliable. However, Nexperia does not give  
any representations or warranties, expressed or implied, as to the accuracy  
or completeness of such information and shall have no liability for the  
consequences of use of such information. Nexperia takes no  
responsibility for the content in this document if provided by an information  
source outside of Nexperia.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific Nexperia product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor  
tested in accordance with automotive testing or application requirements.  
Nexperia accepts no liability for inclusion and/or use of non-  
In no event shall Nexperia be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation -  
lost profits, lost savings, business interruption, costs related to the removal  
or replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
automotive qualified products in automotive equipment or applications.  
©
NX138BKS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
15 June 2016  
13 / 15  
 
 
Nexperia  
NX138BKS  
60 V, dual N-channel Trench MOSFET  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards,  
customer (a) shall use the product without Nexperia’s warranty  
of the product for such automotive applications, use and specifications, and  
(b) whenever customer uses the product for automotive applications beyond  
Nexperia’s specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies Nexperia for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond Nexperia’s  
standard warranty and Nexperia’s product specifications.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
Trademarks  
Notice: All referenced brands, product names, service names and  
trademarks are the property of their respective owners.  
©
NX138BKS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
15 June 2016  
14 / 15  
Nexperia  
NX138BKS  
60 V, dual N-channel Trench MOSFET  
15. Contents  
1. General description......................................................1  
2. Features and benefits.................................................. 1  
3. Applications.................................................................. 1  
4. Quick reference data....................................................1  
5. Pinning information......................................................2  
6. Ordering information....................................................2  
7. Limiting values............................................................. 3  
8. Thermal characteristics............................................... 4  
9. Characteristics..............................................................6  
10. Test information......................................................... 9  
11. Package outline........................................................ 10  
12. Soldering................................................................... 11  
13. Revision history........................................................12  
14. Legal information..................................................... 13  
© Nexperia B.V. 2017. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 15 June 2016  
©
NX138BKS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
15 June 2016  
15 / 15  

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