NX3008CBKS [NEXPERIA]

30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFETProduction;


型号：	NX3008CBKS
厂家：	Nexperia
描述：	30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFETProduction
文件：	总21页 (文件大小：2329K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NX3008CBKS

30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

Rev. 1 — 29 July 2011

Product data sheet

1. Product profile

1.1 General description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very

small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

1.2 Features and benefits

 Low threshold voltage

 Very fast switching

 ESD protection up to 2 kV

 AEC-Q101 qualified

 Trench MOSFET technology

1.3 Applications

 Level shifter

 Load switch

 Power supply converter

 Switching circuits

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min Typ Max Unit

TR2 (P-channel)

V_DS

V_GS

I_D

drain-source voltage T_j= 25 °C

gate-source voltage

-30

-8

[1]

drain current

V_GS= -4.5 V; T_amb= 25 °C

-200 mA

TR1 (N-channel)

V_DS

V_GS

I_D

drain-source voltage T_j= 25 °C

gate-source voltage

drain current

-8

V_GS= 4.5 V; T_amb= 25 °C

350

TR1 (N-channel), Static characteristics

R_DSondrain-source on-state V_GS= 4.5 V; I_D= 350 mA;

resistance T_j= 25 °C

TR2 (P-channel), Static characteristics

R_DSondrain-source on-state V_GS= -4.5 V;

resistance I_D= -200 mA; T_j= 25 °C

1.4

4.1

Ω

2.8

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm².

NX3008CBKS

Nexperia

30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

2. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

source TR1

gate TR1

drain TR2

source TR2

gate TR2

SOT363 (SC-88)

drain TR1

017aaa262

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

NX3008CBKS

SC-88

plastic surface-mounted package; 6 leads

SOT363

4. Marking

Table 4.

Marking codes

Type number

NX3008CBKS

Marking code^[1]

LD%

[1] % = placeholder for manufacturing site code.

NX3008CBKS

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Product data sheet

Rev. 1 — 29 July 2011

2 of 21

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Nexperia

30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

TR2 (P-channel)

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-30

-8

[1]

V_GS= -4.5 V; T_amb= 25 °C

V_GS= -4.5 V; T_amb= 100 °C

T_amb= 25 °C; single pulse; t_p≤ 10 µs

T_amb= 25 °C

-200

-125

-0.8

280

320

990

I_DM

P_tot

peak drain current

[2]

[1]

total power dissipation

T_sp= 25 °C

T_j= 25 °C

TR1 (N-channel)

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

-8

[1]

V_GS= 4.5 V; T_amb= 25 °C

V_GS= 4.5 V; T_amb= 100 °C

T_amb= 25 °C; single pulse; t_p≤ 10 µs

T_amb= 25 °C

350

230

1.4

280

320

990

I_DM

P_tot

peak drain current

[2]

[1]

total power dissipation

T_sp= 25 °C

Per device

[2]

P_tot

T_j

total power dissipation

junction temperature

ambient temperature

storage temperature

T_amb= 25 °C

445

150

°C

-55

-65

T_amb

T_stg

°C

TR1 (N-channel), Source-drain diode

I_Ssource current

TR2 (P-channel), Source-drain diode

I_Ssource current

TR1 N-channel), ESD maximum rating

[1]

[3]

T_amb= 25 °C

300

-200

2000

V_ESD

electrostatic discharge voltage HBM

TR2 (P-channel), ESD maximum rating

V_ESD

electrostatic discharge voltage HBM

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm².

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.

[3] Measured between all pins.

NX3008CBKS

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Product data sheet

Rev. 1 — 29 July 2011

3 of 21

NX3008CBKS

Nexperia

30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

001aao121

001aao122

120

der

(%)

der

(%)

-75

-25

125

175

-75

-25

125

175

T (°C)

Fig 1. Normalized total power dissipation as a

function of junction temperature

Fig 2. Normalized continuous drain current as a

function of junction temperature

001aao251

(A)

(1)

-1

(2)

(3)

(4)

(5)

-2

-1

(V)

I_DMis a single pulse

(1) t_p= 1 ms

(2) t_p= 10 ms

(3) DC; T_sp= 25 °C

(4) t_p= 100 ms

(5) DC; T_amb= 25 °C; 1 cm²drain mounting pad

Fig 3. Safe operating area TR1 (N-channel); junction to ambient; continuous and peak drain currents as a

function of drain-source voltage

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Product data sheet

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4 of 21

NX3008CBKS

Nexperia

30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

001aao253

-10

(A)

-1

(1)

-10

(2)

(3)

(4)

(5)

-2

-10

-1

-10

(V)

I_DMis a single pulse

(1) t_p= 1 ms

(2) t_p= 10 ms

(3) DC; T_sp= 25 °C

(4) t_p= 100 ms

(5) DC; T_amb= 25 °C; 1 cm²drain mounting pad

Fig 4. Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a

function of drain-source

6. Thermal characteristics

Table 6.

Symbol

Per device

R_th(j-a)

Thermal characteristics

Parameter

Conditions

in free air

Min

Typ

Max

Unit

[1]

thermal resistance from junction to ambient

300

K/W

TR1 (N-channel)

[1]

[2]

R_th(j-a)

thermal resistance from junction to ambient

thermal resistance from junction to solder point

thermal resistance from junction to ambient

thermal resistance from junction to solder point

390

340

445

390

130

K/W

R_th(j-sp)

TR2 (P-channel)

R_th(j-a)

[1]

[2]

in free air

390

340

445

390

130

K/W

R_th(j-sp)

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm².

NX3008CBKS

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Product data sheet

Rev. 1 — 29 July 2011

5 of 21

NX3008CBKS

Nexperia

30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

017aaa034

duty cycle = 1

0.75

th(j-a)

(K/W)

0.5

0.33

0.2

0.25

0.1

0.05

0.02

0.01

−3

−2

−1

(s)

FR4 PCB, standard footprint

Fig 5. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

017aaa035

duty cycle = 1

th(j-a)

(K/W)

0.75

0.5

0.33

0.2

0.25

0.1

0.05

0.02

0.01

−3

−2

−1

(s)

FR4 PCB, mounting pad for drain 1 cm².

Fig 6. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

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Product data sheet

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6 of 21

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Nexperia

30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

017aaa034

duty cycle = 1

0.75

th(j-a)

(K/W)

0.5

0.33

0.2

0.25

0.1

0.05

0.02

0.01

−3

−2

−1

(s)

FR4 PCB, standard footprint

Fig 7. TR2, Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

017aaa035

duty cycle = 1

th(j-a)

(K/W)

0.75

0.5

0.33

0.2

0.25

0.1

0.05

0.02

0.01

−3

−2

−1

(s)

FR4 PCB, mounting pad for drain 1 cm²

Fig 8. TR2, Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

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Product data sheet

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30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

7. Characteristics

Table 7.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

TR2 (P-channel), Static characteristics

V_(BR)DSS

drain-source

breakdown voltage

I_D= -250 µA; V_GS= 0 V; T_j= 25 °C

-30

V_GSth

gate-source threshold I_D= -250 µA; V_DS= V_GS; T_j= 25 °C

voltage

-0.6

-0.9

-1.1

I_DSS

drain leakage current

V_DS= -30 V; V_GS= 0 V; T_j= 25 °C

V_DS= -30 V; V_GS= 0 V; T_j= 150 °C

V_GS= 8 V; V_DS= 0 V; T_j= 25 °C

V_GS= -8 V; V_DS= 0 V; T_j= 25 °C

V_GS= 4.5 V; V_DS= 0 V; T_j= 25 °C

V_GS= -4.5 V; V_DS= 0 V; T_j= 25 °C

V_GS= 2.5 V; V_DS= 0 V; T_j= 25 °C

V_GS= -2.5 V; V_DS= 0 V; T_j= 25 °C

V_GS= -4.5 V; I_D= -200 mA; T_j= 25 °C

V_GS= -2.5 V; I_D= -10 mA; T_j= 25 °C

V_GS= -4.5 V; I_D= -200 mA; T_j= 150 °C

V_DS= -10 V; I_D= -200 mA; T_j= 25 °C

-1

-10

-1

µA

Ω

I_GSS

gate leakage current

-0.2

-10

-1

R_DSon

drain-source on-state

resistance

2.8

5.3

160

4.1

6.5

7.8

Ω

g_fs

transfer conductance

TR1 (N-channel), Static characteristics

V_(BR)DSS

drain-source

breakdown voltage

I_D= 250 µA; V_GS= 0 V; T_j= 25 °C

V_GSth

gate-source threshold I_D= 250 µA; V_DS= V_GS; T_j= 25 °C

voltage

0.6

0.9

1.1

I_DSS

drain leakage current

V_DS= 30 V; V_GS= 0 V; T_j= 25 °C

V_DS= 30 V; V_GS= 0 V; T_j= 150 °C

V_GS= 8 V; V_DS= 0 V; T_j= 25 °C

V_GS= -8 V; V_DS= 0 V; T_j= 25 °C

V_GS= 4.5 V; V_DS= 0 V; T_j= 25 °C

V_GS= -4.5 V; V_DS= 0 V; T_j= 25 °C

V_GS= 2.5 V; V_DS= 0 V; T_j= 25 °C

V_GS= -2.5 V; V_DS= 0 V; T_j= 25 °C

V_GS= 4.5 V; I_D= 350 mA; T_j= 25 °C

V_GS= 4.5 V; I_D= 350 mA; T_j= 150 °C

V_GS= 2.5 V; I_D= 200 mA; T_j= 25 °C

V_GS= 1.8 V; I_D= 10 mA; T_j= 25 °C

V_DS= 10 V; I_D= 350 mA; T_j= 25 °C

µA

Ω

I_GSS

gate leakage current

0.2

R_DSon

drain-source on-state

resistance

1.4

2.5

2.1

2.8

1.8

1.4

Ω

g_fs

transfer conductance

310

TR1 (N-channel), Dynamic characteristics

Q_G(tot)

Q_GS

total gate charge

gate-source charge

gate-drain charge

V_DS= 15 V; I_D= 350 mA; V_GS= 4.5 V;

T_j= 25 °C

0.52

0.17

0.08

0.68

Q_GD

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Product data sheet

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30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

Table 7.

Symbol

C_iss

Characteristics …continued

Parameter

Conditions

Min

Typ

Max

Unit

input capacitance

output capacitance

V_DS= 15 V; f = 1 MHz; V_GS= 0 V;

T_j= 25 °C

C_oss

6.5

2.2

C_rss

reverse transfer

capacitance

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 20 V; R_L= 250 Ω; V_GS= 4.5 V;

R_G(ext)= 6 Ω; T_j= 25 °C

turn-off delay time

fall time

138

TR2 (P-channel), Dynamic characteristics

Q_G(tot)

Q_GS

Q_GD

C_iss

total gate charge

gate-source charge

gate-drain charge

input capacitance

output capacitance

V_DS= -15 V; I_D= -200 mA;

V_GS= -4.5 V; T_j= 25 °C

0.55

0.23

0.09

0.72

V_DS= -15 V; f = 1 MHz; V_GS= 0 V;

T_j= 25 °C

C_oss

C_rss

6.5

reverse transfer

capacitance

2.3

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= -20 V; R_L= 250 Ω; V_GS= -4.5 V;

R_G(ext)= 6 Ω; T_j= 25 °C

turn-off delay time

fall time

130

TR2 (P-channel), Source-drain diode characteristics

V_SDsource-drain voltage I_S= -200 mA; V_GS= 0 V; T_j= 25 °C

TR1 (N-channel), Source-drain diode characteristics

-0.47 -0.88 -1.2

V_SD

source-drain voltage

I_S= 350 mA; V_GS= 0 V; T_j= 25 °C

0.47

0.85

1.2

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Product data sheet

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NX3008CBKS

Nexperia

30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

001aao267

001aao268

-3

0.4

4.5 V

2.5 V

(A)

2 V

0.3

(1)

(2)

(3)

-4

-5

-6

1.75 V

1.5 V

0.2

0.1

0.0

= 1.25 V

0.0

0.5

1.0

1.5

(V)

T_j= 25 °C

T_j= 25 °C; V_DS= 5 V

(1) minimum values

(2) typical values

(3) maximum values

Fig 9. TR1: Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 10. TR1: Sub-threshold drain current as a function

of gate-source voltage

001aao269

001aao270

(on)

(Ω)

(1)

(2)

(3)

(4)

(1)

(2)

(5)

(6)

0.0

0.1

0.2

0.3

0.4

(A)

(V)

T_j= 25 °C

I_D= 350 mA

(1) T_j= 150 °C

(2) T_j= 25 °C

(1) V_GS= 1.5 V

(2) V_GS= 1.75 V

(3) V_GS= 2.0 V

(4) V_GS= 2.25 V

(5) V_GS= 2.5 V

(6) V_GS= 4.5 V

Fig 11. TR1: Drain-source on-state resistance as a

function of drain current; typical values

Fig 12. TR1: Drain-source on-state resistance as a

function of gate-source voltage; typical values

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Product data sheet

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30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

001aao272

2.0

001aao271

0.4

1.5

(A)

(1)

(2)

0.3

1.0

0.5

0.0

0.2

0.1

0.0

-60

120

180

T (˚C)

(V)

V_DS> I_Dx R_DSon

(1) T_j= 25 °C

(2) T_j= 150 °C

Fig 13. TR1: Transfer characteristics: drain current as

a function of gate-source voltage; typical

values

Fig 14. TR1: Normalized drain-source on-state

resistance as a function of junction

temperature; typical values

001aao273

001aao274

1.5

GS(th)

(V)

(1)

(2)

(pF)

1.0

0.5

0.0

(2)

(3)

-1

-60

120

180

T (˚C)

(V)

I_D= 0.25 mA; V_DS= V_GS

(1) maximum values

(2) typical values

f = 1 MHz; V_GS= 0 V

(1)C_iss

(2)C_oss

(3) minimum values

(3)C_rss

Fig 15. TR1: Gate-source threshold voltage as a

function of junction temperature

Fig 16. TR1: Input, output and reverse transfer

capacitances as a function of drain-source

voltage; typical values

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Product data sheet

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30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

001aao275

(V)

GS(pl)

GS(th)

GS1

GS2

G(tot)

003aaa508

0.0

0.2

0.4

0.6

(nC)

I_D= 350 mA; V_DS= 15 V; T_amb= 25 °C

Fig 17. TR1: Gate-source voltage as a function of gate

charge; typical values

Fig 18. Gate charge waveform definitions

001aao276

001aao256

0.4

-0.25

-4.5 V

-3 V

(A)

-0.20

-2.5 V

0.3

-0.15

-0.10

-0.05

0.00

(1)

(2)

0.2

0.1

0.0

-2 V

= -1.5 V

-3

0.0

0.4

0.6

1.2

-1

-2

-4

(V)

V_GS= 0 V

T_j= 25 °C

(1) T_j= 150 °C

(2) T_j= 25 °C

Fig 19. TR1: Source current as a function of

source-drain voltage; typical values

Fig 20. TR2: Output characteristics: drain current as a

function of drain-source voltage; typical values

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Product data sheet

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30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

001aao257

001aao258

-3

-10

(on)

(Ω)

(A)

(1)

(2)

(3)

(4)

(1)

(2)

(3)

-4

-5

-6

-10

(5)

-10

(6)

0.0

-0.5

-1.0

-1.5

-0.05

-0.10

-0.15

-0.20

-0.25

(A)

(V)

T_j= 25 °C; V_DS= -5 V

(1) minimum values

(2) typical values

T_j= 25 °C

(1) V_GS= -1.75 V

(2) V_GS= -2.0 V

(3) V_GS= -2.25 V

(4) V_GS= -2.5 V

(5) V_GS= -3.0 V

(6) V_GS= -4.5 V

(3) maximum values

Fig 21. TR2: Sub-threshold drain current as a function

of gate-source voltage

Fig 22. TR2: Drain-source on-state resistance as a

function of drain current; typical values

001aao259

001aao260

-0.25

(on)

(Ω)

(A)

-0.20

(1)

(2)

-0.15

-0.10

-0.05

0.00

(1)

(2)

-1

-2

-3

-4

-5

-1

-2

-3

(A)

(V)

I_D= -200 mA

(1) T_j= 150 °C

(2) T_j= 25 °C

V_DS> I_Dx R_DSon

(1) T_j= 25 °C

(2) T_j= 150 °C

Fig 23. TR2: Drain-source on-state resistance as a

function of gate-source voltage; typical values

Fig 24. TR2: Transfer characteristics: drain current as

a function of gate-source voltage; typical

values

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Product data sheet

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30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

001aao261

001aao262

2.0

-1.5

GS(th)

(V)

(1)

(2)

1.5

-1.0

-0.5

0.0

1.0

0.5

(3)

0.0

-60

120

180

-60

120

180

T (˚C)

I_D= -0.25 mA; V_DS= V_GS

(1) maximum values

(2) typical values

(3) minimum values

Fig 25. TR2: Normalized drain-source on-state

resistance as a function of junction

temperature; typical values

Fig 26. TR2: Gate-source threshold voltage as a

function of junction temperature

001aao263

001aao264

-5

(V)

-4

-3

-2

-1

(1)

(pF)

(2)

(3)

-1

-10

-1

-10

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

(nC)

(V)

f = 1 MHz; V_GS= 0 V

(1)C_iss

I_D= -200 mA; V_DS= -15 V; T_amb= 25 °C

(2)C_oss

(3)C_rss

Fig 27. TR2: Input, output and reverse transfer

Fig 28. Gate-source voltage as a function of gate

charge; typical values

capacitances as a function of drain-source

voltage; typical values

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30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

001aao265

-0.25

(A)

-0.20

GS(pl)

-0.15

-0.10

-0.05

0.00

(1)

(2)

GS(th)

GS1

GS2

G(tot)

003aaa508

0.0

-0.4

-0.8

-1.2

(V)

V_GS= 0 V

(1) T_j= 150 °C

(2) T_j= 25 °C

Fig 29. Gate charge waveform definitions

Fig 30. TR2: Source current as a function of

source-drain voltage; typical values

8. Test information

duty cycle δ =

006aaa812

Fig 31. Duty cycle definition

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

NX3008CBKS

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Product data sheet

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15 of 21

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Nexperia

30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

9. Package outline

Plastic surface-mounted package; 6 leads

SOT363

pin 1

index

M B

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

max

0.30

0.20

1.1

0.8

0.25

0.10

2.2

1.8

1.35

1.15

2.2

2.0

0.45

0.15

0.25

0.15

0.1

1.3

0.65

0.2

0.1

REFERENCES

JEDEC JEITA

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

04-11-08

06-03-16

SOT363

SC-88

Fig 32. Package outline SOT363 (SC-88)

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Product data sheet

Rev. 1 — 29 July 2011

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Nexperia

30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

10. Soldering

2.65

solder lands

0.4 (2×)

1.5

2.35

0.6

(4×)

0.5

(4×)

solder resist

solder paste

0.5

(4×)

0.6

(2×)

occupied area

0.6

(4×)

Dimensions in mm

1.8

sot363_fr

Fig 33. Reflow soldering footprint for SOT363 (SC-88)

1.5

solder lands

2.5

0.3

4.5

solder resist

occupied area

1.5

Dimensions in mm

preferred transport

direction during soldering

1.3

2.45

5.3

sot363_fw

Fig 34. Wave soldering footprint for SOT363 (SC-88)

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Product data sheet

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Nexperia

30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

11. Revision history

Table 8.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

NX3008CBKS v.1

20110729

Product data sheet

NX3008CBKS

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Product data sheet

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30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

12. Legal information

12.1 Data sheet status

Document status ^{[1] [2]}

Product status ^[3]

Development

Definition

Objective [short] data sheet

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term 'short data sheet' is explained in section "Definitions".

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nexperia.com.

Right to make changes — Nexperia reserves the right to make

12.2 Definitions

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

Nexperia does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Suitability for use — Nexperia products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of a Nexperia product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. Nexperia accepts no liability for inclusion and/or use of

Nexperia products in such equipment or applications and

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the Nexperia

product is suitable and fit for the customer’s applications and

products planned, as well as for the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, Nexperia does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

Nexperia does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using Nexperia

products in order to avoid a default of the applications and

In no event shall Nexperia be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

the products or of the application or use by customer’s third party

customer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of Nexperia.

NX3008CBKS

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Product data sheet

Rev. 1 — 29 July 2011

19 of 21

NX3008CBKS

Nexperia

30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

Terms and conditions of commercial sale — Nexperia

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nexperia.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. Nexperia hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may

be subject to export control regulations. Export might require a prior

authorization from national authorities.

13. Contact information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

NX3008CBKS

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Product data sheet

Rev. 1 — 29 July 2011

20 of 21

NX3008CBKS

Nexperia

30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET

14. Contents

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1

1.2

1.3

1.4

General description . . . . . . . . . . . . . . . . . . . . . .1

Features and benefits. . . . . . . . . . . . . . . . . . . . .1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Quick reference data . . . . . . . . . . . . . . . . . . . . .1

Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

Ordering information. . . . . . . . . . . . . . . . . . . . . .2

Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

Thermal characteristics . . . . . . . . . . . . . . . . . . .5

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .8

Test information. . . . . . . . . . . . . . . . . . . . . . . . .15

Quality information . . . . . . . . . . . . . . . . . . . . . .15

Package outline . . . . . . . . . . . . . . . . . . . . . . . . .16

Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Revision history. . . . . . . . . . . . . . . . . . . . . . . . .18

8.1

Legal information. . . . . . . . . . . . . . . . . . . . . . . .19

Data sheet status . . . . . . . . . . . . . . . . . . . . . . .19

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .19

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .19

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .20

12.1

12.2

12.3

12.4

Contact information. . . . . . . . . . . . . . . . . . . . . .20

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 29 July 2011

NX3008CBKS [NEXPERIA]

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