NXV55UN [NEXPERIA]

30 V, N-channel Trench MOSFETProduction;
NXV55UN
型号: NXV55UN
厂家: Nexperia    Nexperia
描述:

30 V, N-channel Trench MOSFETProduction

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NXV55UN  
30 V, N-channel Trench MOSFET  
19 October 2020  
Product data sheet  
1. General description  
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted  
Device (SMD) plastic package using Trench MOSFET technology.  
2. Features and benefits  
Low threshold voltage  
Very fast switching  
Trench MOSFET technology  
3. Applications  
Relay driver  
High-speed line driver  
Low-side load switch  
Switching circuits  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Typ  
Max  
30  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
-
-
-
VGS  
-8  
-
8
V
ID  
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s  
VGS = 4.5 V; ID = 1.9 A; Tj = 25 °C  
[1]  
2.3  
A
Static characteristics  
RDSon drain-source on-state  
resistance  
-
50  
66  
mΩ  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.  
 
 
 
 
 
Nexperia  
NXV55UN  
30 V, N-channel Trench MOSFET  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
gate  
Simplified outline  
Graphic symbol  
3
G
S
D
D
2
source  
drain  
G
3
mbb076  
S
1
2
SOT23  
6. Ordering information  
Table 3. Ordering information  
Type number  
Package  
Name  
Description  
Version  
NXV55UN  
SOT23  
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 SOT23  
mm x 1.3 mm x 1 mm body  
7. Marking  
Table 4. Marking codes  
Type number  
Marking code[1]  
%5K  
NXV55UN  
[1] % = placeholder for manufacturing site code  
8. Limiting values  
Table 5. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Max  
30  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
VGS  
-8  
8
V
ID  
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s  
VGS = 4.5 V; Tamb = 25 °C  
VGS = 4.5 V; Tamb = 100 °C  
Tamb = 25 °C; single pulse; tp ≤ 10 µs  
Tamb = 25 °C  
[1]  
[1]  
-
2.3  
1.9  
1.2  
7.6  
340  
480  
2.1  
150  
150  
150  
A
-
A
-
A
IDM  
Ptot  
peak drain current  
-
A
total power dissipation  
[2]  
[1]  
-
mW  
mW  
W
-
Tsp = 25 °C  
-
Tj  
junction temperature  
ambient temperature  
storage temperature  
-55  
-55  
-65  
°C  
°C  
°C  
Tamb  
Tstg  
©
NXV55UN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2020. All rights reserved  
Product data sheet  
19 October 2020  
2 / 12  
 
 
 
 
 
Nexperia  
NXV55UN  
30 V, N-channel Trench MOSFET  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
Source-drain diode  
IS source current  
Tamb = 25 °C  
[1]  
-
0.4  
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.  
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.  
017aaa001  
017aaa002  
120  
120  
P
der  
(%)  
I
der  
(%)  
80  
80  
40  
40  
0
- 75  
0
- 75  
- 25  
25  
75  
125  
175  
(°C)  
- 25  
25  
75  
125  
175  
(°C)  
T
T
amb  
amb  
Fig. 1. Normalized total power dissipation as a  
function of ambient temperature  
Fig. 2. Normalized continuous drain current as a  
function of ambient temperature  
aaa-032204  
10  
t = 10 µs  
p
Limit R  
= V /I  
DS  
DSon  
D
I
D
100 µs  
1 ms  
(A)  
1
-1  
10  
10  
10  
10  
10  
-2  
-3  
-4  
-5  
10 ms  
2
DC; T  
= 25 °C; 6 cm  
amb  
DC; T = 25 °C  
sp  
100 ms  
-1  
2
10  
1
10  
10  
V
(V)  
DS  
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-  
source voltage  
©
NXV55UN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2020. All rights reserved  
Product data sheet  
19 October 2020  
3 / 12  
 
Nexperia  
NXV55UN  
30 V, N-channel Trench MOSFET  
9. Thermal characteristics  
Table 6. Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
325  
230  
50  
Max  
370  
260  
60  
Unit  
K/W  
K/W  
K/W  
Rth(j-a)  
thermal resistance from in free air  
junction to ambient  
[1]  
[2]  
-
-
-
Rth(j-sp)  
thermal resistance from  
junction to solder point  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.  
017aaa340  
3
10  
duty cycle = 1  
Z
th(j-a)  
(K/W)  
0.75  
0.5  
2
0.33  
0.25  
0.2  
10  
0.1  
0.05  
0.02  
10  
0
0.01  
1
10  
- 3  
- 2  
10  
- 1  
10  
2
3
1
10  
10  
10  
t
p
(s)  
FR4 PCB, standard footprint  
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
017aaa341  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle = 1  
0.75  
0.5  
2
10  
0.33  
0.25  
0.2  
0.1  
0.05  
10  
0.02  
0.01  
0
1
10  
- 3  
- 2  
10  
- 1  
10  
2
3
1
10  
10  
10  
t
p
(s)  
FR4 PCB, mounting pad for drain 6 cm2  
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
©
NXV55UN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2020. All rights reserved  
Product data sheet  
19 October 2020  
4 / 12  
 
 
Nexperia  
NXV55UN  
30 V, N-channel Trench MOSFET  
10. Characteristics  
Table 7. Characteristics  
Symbol  
Static characteristics  
V(BR)DSS drain-source  
breakdown voltage  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
ID = 250 µA; VGS = 0 V; Tj = 25 °C  
30  
-
-
V
V
VGSth  
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C  
voltage  
0.4  
0.6  
0.9  
IDSS  
IGSS  
drain leakage current  
gate leakage current  
VDS = 30 V; VGS = 0 V; Tj = 25 °C  
VGS = 8 V; VDS = 0 V; Tj = 25 °C  
VGS = -8 V; VDS = 0 V; Tj = 25 °C  
VGS = 4.5 V; ID = 1.9 A; Tj = 25 °C  
VGS = 4.5 V; ID = 1.9 A; Tj = 150 °C  
VGS = 2.5 V; ID = 1.9 A; Tj = 25 °C  
VGS = 1.8 V; ID = 1.8 A; Tj = 25 °C  
VGS = 1.5 V; ID = 1.7 A; Tj = 25 °C  
VDS = 5 V; ID = 1.9 A; Tj = 25 °C  
-
-
-
-
-
-
-
-
-
-
1
µA  
nA  
-
100  
-100  
66  
-
nA  
RDSon  
drain-source on-state  
resistance  
50  
81  
57  
66  
78  
9.4  
mΩ  
mΩ  
mΩ  
mΩ  
mΩ  
S
110  
85  
95  
105  
-
gfs  
forward  
transconductance  
RG  
gate resistance  
f = 1 MHz  
-
1.7  
-
Ω
Dynamic characteristics  
QG(tot)  
QGS  
QGD  
Ciss  
total gate charge  
VDS = 15 V; ID = 1.9 A; VGS = 4.5 V;  
Tj = 25 °C  
-
-
-
-
-
-
5.8  
0.4  
1.4  
352  
36  
8.7  
nC  
nC  
nC  
pF  
pF  
pF  
gate-source charge  
gate-drain charge  
input capacitance  
output capacitance  
-
-
-
-
-
VDS = 15 V; f = 1 MHz; VGS = 0 V;  
Tj = 25 °C  
Coss  
Crss  
reverse transfer  
capacitance  
31  
td(on)  
tr  
td(off)  
tf  
turn-on delay time  
rise time  
VDS = 15 V; ID = 1.9 A; VGS = 4.5 V;  
RG(ext) = 6 Ω; Tj = 25 °C  
-
-
-
-
4
-
-
-
-
ns  
ns  
ns  
ns  
13  
32  
8
turn-off delay time  
fall time  
Source-drain diode  
VSD  
source-drain voltage  
IS = 0.4 A; VGS = 0 V; Tj = 25 °C  
-
0.6  
1.2  
V
©
NXV55UN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2020. All rights reserved  
Product data sheet  
19 October 2020  
5 / 12  
 
Nexperia  
NXV55UN  
30 V, N-channel Trench MOSFET  
aaa-032205  
aaa-032206  
-3  
-4  
-5  
-6  
7
10  
D
I
4.5 V  
2.5 V  
D
(A)  
6
I
(A)  
1.5 V  
min  
typ  
max  
5
4
3
2
1
10  
1.2 V  
10  
10  
V
= 1 V  
GS  
4
0
0
1
2
3
5
0
0.25  
0.5  
0.75  
1
V
(V)  
V
(V)  
GS  
DS  
Tj = 25 °C  
Tj = 25 °C; VDS = 5 V  
Fig. 6. Output characteristics: drain current as a  
function of drain-source voltage; typical values  
Fig. 7. Sub-threshold drain current as a function of  
gate-source voltage  
aaa-032207  
aaa-032208  
0.4  
0.4  
V
= 1 V  
1.2 V  
1.3 V  
1.4 V  
GS  
R
DSon  
R
DSon  
0.3  
0.3  
0.2  
0.1  
0
0.2  
0.1  
0
1.5 V  
T = 150 °C  
j
T = 25 °C  
j
1.8 V 3 V 4.5 V  
6
0
2
4
8
0
1
2
3
4
5
I
D
(A)  
V
(V)  
GS  
Tj = 25 °C  
ID = 1.9 A  
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function  
of drain current; typical values  
of gate-source voltage; typical values  
©
NXV55UN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2020. All rights reserved  
Product data sheet  
19 October 2020  
6 / 12  
Nexperia  
NXV55UN  
30 V, N-channel Trench MOSFET  
aaa-032209  
aaa-032210  
7
2
1.5  
1
I
D
a
(A)  
6
5
4
3
2
1
0
T = 150 °C  
j
0.5  
T = 25 °C  
j
0
-60  
0
0.5  
1
1.5  
2
0
60  
120  
180  
V
(V)  
T (°C)  
j
GS  
VDS = 5 V  
Fig. 10. Transfer characteristics: drain current as a  
function of gate-source voltage; typical values  
Fig. 11. Normalized drain-source on-state resistance  
as a function of junction temperature; typical  
values  
aaa-032211  
aaa-032212  
3
1.5  
10  
C
(pF)  
V
GS(th)  
(V)  
C
iss  
2
1
0.5  
0
10  
max  
typ  
C
oss  
C
rss  
10  
min  
1
-1  
10  
2
-60  
0
60  
120  
180  
1
10  
10  
T (°C)  
j
V
(V)  
DS  
ID = 250 µA; VDS = VGS  
f = 1 MHz; VGS = 0 V  
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances  
junction temperature  
as a function of drain-source voltage; typical  
values  
©
NXV55UN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2020. All rights reserved  
Product data sheet  
19 October 2020  
7 / 12  
Nexperia  
NXV55UN  
30 V, N-channel Trench MOSFET  
aaa-032213  
5
V
(V)  
V
GS  
DS  
4
I
D
3
2
1
V
V
GS(pl)  
GS(th)  
V
GS  
Q
GS2  
Q
GS1  
0
0
Q
Q
GS  
GD  
2
4
6
Q
G
(nC)  
Q
G(tot)  
003aaa508  
VDS = 15 V; ID = 1.9 A; Tj = 25 °C  
Fig. 15. Gate charge waveform definitions  
Fig. 14. Gate-source voltage as a function of gate  
charge; typical values  
aaa-032214  
1.5  
I
S
(A)  
1
T = 150 °C  
j
T = 25 °C  
j
0.5  
0
0
0.4  
0.8  
1.2  
V
(V)  
SD  
VGS = 0 V  
Fig. 16. Source current as a function of source-drain voltage; typical values  
11. Test information  
t
t
1
2
P
duty cycle δ =  
t
2
t
1
t
006aaa812  
Fig. 17. Duty cycle definition  
©
NXV55UN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2020. All rights reserved  
Product data sheet  
19 October 2020  
8 / 12  
 
Nexperia  
NXV55UN  
30 V, N-channel Trench MOSFET  
12. Package outline  
Plastic surface-mounted package; 3 leads  
SOT23  
B
D
A
E
X
H
E
v
A
3
Q
A
A
1
c
1
2
e
1
b
w
B
L
p
p
e
detail X  
0
1
2 mm  
scale  
Dimensions (mm are the original dimensions)  
Unit  
A
A
b
c
D
E
e
e
1
H
E
L
p
Q
v
w
1
p
max 1.1 0.1 0.48 0.15 3.0 1.4  
nom  
2.5 0.45 0.55  
2.1 0.15 0.45  
mm  
1.9 0.95  
0.2 0.1  
0.9  
0.38 0.09 2.8 1.2  
min  
sot023_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
14-06-19  
14-09-22  
SOT23  
TO-236AB  
Fig. 18. Package outline SOT23  
©
NXV55UN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2020. All rights reserved  
Product data sheet  
19 October 2020  
9 / 12  
 
Nexperia  
NXV55UN  
30 V, N-channel Trench MOSFET  
13. Soldering  
3.3  
2.9  
1.9  
solder lands  
solder resist  
2
3
1.7  
solder paste  
occupied area  
0.6  
0.7  
(3×)  
(3×)  
Dimensions in mm  
0.5  
(3×)  
0.6  
(3×)  
1
sot023_fr  
Fig. 19. Reflow soldering footprint for SOT23  
2.2  
1.2  
(2×)  
1.4  
(2×)  
solder lands  
solder resist  
2.6  
4.6  
occupied area  
Dimensions in mm  
1.4  
preferred transport direction during soldering  
2.8  
4.5  
sot023_fw  
Fig. 20. Wave soldering footprint for SOT23  
14. Revision history  
Table 8. Revision history  
Data sheet ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
NXV55UN v.1  
20201019  
Product  
-
-
©
NXV55UN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2020. All rights reserved  
Product data sheet  
19 October 2020  
10 / 12  
 
 
Nexperia  
NXV55UN  
30 V, N-channel Trench MOSFET  
injury, death or severe property or environmental damage. Nexperia and its  
suppliers accept no liability for inclusion and/or use of Nexperia products in  
such equipment or applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
15. Legal information  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Data sheet status  
Document status Product  
Definition  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no representation  
or warranty that such applications will be suitable for the specified use  
without further testing or modification.  
[1][2]  
status [3]  
Objective [short]  
data sheet  
Development  
This document contains data from  
the objective specification for  
product development.  
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and products using Nexperia products, and Nexperia accepts no liability for  
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minimize the risks associated with their applications and products.  
Preliminary [short]  
data sheet  
Qualification  
Production  
This document contains data from  
the preliminary specification.  
Product [short]  
data sheet  
This document contains the product  
specification.  
[1] Please consult the most recently issued document before initiating or  
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Definitions  
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
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automotive applications to automotive specifications and standards,  
customer (a) shall use the product without Nexperia’s warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
Nexperia’s specifications such use shall be solely at customer’s own risk,  
and (c) customer fully indemnifies Nexperia for any liability, damages or failed  
product claims resulting from customer design and use of the product for  
automotive applications beyond Nexperia’s standard warranty and Nexperia’s  
product specifications.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Nexperia’s aggregate and cumulative liability towards customer  
for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale of Nexperia.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
Right to make changes — Nexperia reserves the right to make changes  
to information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
Trademarks  
Suitability for use — Nexperia products are not designed, authorized or  
warranted to be suitable for use in life support, life-critical or safety-critical  
systems or equipment, nor in applications where failure or malfunction  
of an Nexperia product can reasonably be expected to result in personal  
Notice: All referenced brands, product names, service names and  
trademarks are the property of their respective owners.  
©
NXV55UN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2020. All rights reserved  
Product data sheet  
19 October 2020  
11 / 12  
 
Nexperia  
NXV55UN  
30 V, N-channel Trench MOSFET  
Contents  
1. General description......................................................1  
2. Features and benefits.................................................. 1  
3. Applications.................................................................. 1  
4. Quick reference data....................................................1  
5. Pinning information......................................................2  
6. Ordering information....................................................2  
7. Marking..........................................................................2  
8. Limiting values............................................................. 2  
9. Thermal characteristics............................................... 4  
10. Characteristics............................................................5  
11. Test information..........................................................8  
12. Package outline.......................................................... 9  
13. Soldering................................................................... 10  
14. Revision history........................................................10  
15. Legal information......................................................11  
© Nexperia B.V. 2020. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 19 October 2020  
©
NXV55UN  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2020. All rights reserved  
Product data sheet  
19 October 2020  
12 / 12  

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