PBHV8215Z [NEXPERIA]
150 V, 2 A NPN high-voltage low VCEsat (BISS) transistorProduction;型号: | PBHV8215Z |
厂家: | Nexperia |
描述: | 150 V, 2 A NPN high-voltage low VCEsat (BISS) transistorProduction 开关 光电二极管 晶体管 |
文件: | 总12页 (文件大小:256K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PBHV8215Z
150 V, 2 A NPN high-voltage low VCEsat transistor
12 July 2023
Product data sheet
1. General description
NPN high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted
Device (SMD) plastic package.
PNP complement: PBHV9215Z
2. Features and benefits
•
High voltage
•
•
•
•
•
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
Medium power SMD plastic package
AEC-Q101 qualified
3. Applications
•
•
•
•
LED driver for LED chain module
LCD backlighting
Automotive motor management
Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
150
V
IC
collector current
DC current gain
-
-
2
-
A
hFE
VCE = 10 V; IC = 100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
100
240
Nexperia
PBHV8215Z
150 V, 2 A NPN high-voltage low VCEsat transistor
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
base
Simplified outline
Graphic symbol
C; C
B
C
E
C
4
2
collector
emitter
B
3
E
sym016
1
2
3
4
collector
SC-73 (SOT223)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PBHV8215Z
SC-73
plastic, surface-mounted package with increased heatsink; SOT223
4 leads; 2.3 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
V8215Z
PBHV8215Z
©
PBHV8215Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 July 2023
2 / 12
Nexperia
PBHV8215Z
150 V, 2 A NPN high-voltage low VCEsat transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
350
150
6
Unit
V
collector-base voltage
open emitter
-
collector-emitter voltage open base
-
V
emitter-base voltage
collector current
open collector
-
V
-
2
A
ICM
peak collector current
peak base current
total power dissipation
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
-
4
A
IBM
-
500
1.45
0.73
150
150
150
mA
W
W
°C
°C
°C
Ptot
[1]
[2]
-
-
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
-55
-65
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
006aab764
2.0
P
tot
(W)
(1)
(2)
1.5
1.0
0.5
0.0
- 75
- 25
25
75
125
175
(°C)
T
amb
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, standard footprint
Fig. 1. Power derating curves
©
PBHV8215Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 July 2023
3 / 12
Nexperia
PBHV8215Z
150 V, 2 A NPN high-voltage low VCEsat transistor
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
85
Unit
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
-
-
-
-
-
-
170
15
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
006aab765
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
0.75
0.5
10
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab766
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
0.01
1
0
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBHV8215Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 July 2023
4 / 12
Nexperia
PBHV8215Z
150 V, 2 A NPN high-voltage low VCEsat transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
100
10
Unit
nA
ICBO
collector-base cut-off
current
VCB = 120 V; IE = 0 A; Tamb = 25 °C
VCB = 120 V; IE = 0 A; Tj = 150 °C
VEB = 4 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-
-
µA
IEBO
ICES
hFE
emitter-base cut-off
current
100
nA
collector-emitter cut-off VCE = 120 V; VBE = 0 V; Tamb = 25 °C
current
-
-
100
nA
DC current gain
VCE = 10 V; IC = 100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
100
100
90
55
-
240
230
210
130
15
-
VCE = 10 V; IC = 1 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
VCE = 10 V; IC = 1.5 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
VCE = 10 V; IC = 2 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
VCEsat
collector-emitter
saturation voltage
IC = 100 mA; IB = 20 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
30
170
220
mV
mV
mV
IC = 1 A; IB = 200 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
90
IC = 1.5 A; IB = 300 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
130
IC = 2 A; IB = 400 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
170
85
280
140
mV
mΩ
RCEsat
VBEsat
collector-emitter
saturation resistance
base-emitter saturation
voltage
-
1
1.2
V
td
tr
delay time
VCC = 6 V; IC = 0.5 A; IBon = 0.1 A;
IBoff = -0.1 A; Tamb = 25 °C
-
-
-
-
-
-
-
20
-
-
-
-
-
-
-
ns
rise time
280
300
2165
275
2440
33
ns
ton
ts
turn-on time
storage time
fall time
ns
ns
tf
ns
toff
fT
turn-off time
transition frequency
ns
VCE = 10 V; IC = 10 mA; f = 100 MHz;
Tamb = 25 °C
MHz
Cc
Ce
collector capacitance
emitter capacitance
VCB = 20 V; IE = 10 mA; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
-
17
-
-
pF
pF
VEB = 0.5 V; IC = 0 A; ic = 0 A;
f = 1 MHz; Tamb = 25 °C
500
©
PBHV8215Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 July 2023
5 / 12
Nexperia
PBHV8215Z
150 V, 2 A NPN high-voltage low VCEsat transistor
006aab767
006aab768
400
4.0
I
(mA) = 240
192
B
216
168
I
C
(A)
h
FE
3.2
(1)
(2)
144
300
120
72
96
48
2.4
1.6
0.8
0
200
100
0
24
(3)
- 1
2
3
4
10
1
10
10
10
10
(mA)
0
1
2
3
4
5
I
V
(V)
CE
C
VCE = 10 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
Fig. 4. DC current gain as a function of collector
current; typical values
006aab769
006aab770
1.2
1.3
V
BE
(V)
V
BEsat
(V)
(1)
0.8
0.9
0.5
0.1
(1)
(2)
(3)
(2)
(3)
0.4
0
10
- 1
2
3
4
- 1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
VCE = 10 V
IC/IB = 5
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 6. Base-emitter voltage as a function of collector Fig. 7. Base-emitter saturation voltage as a function of
current; typical values
collector current; typical values
©
PBHV8215Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 July 2023
6 / 12
Nexperia
PBHV8215Z
150 V, 2 A NPN high-voltage low VCEsat transistor
006aab771
006aab772
1
1
V
V
CEsat
(V)
CEsat
(V)
- 1
- 1
10
10
(1)
(1)
(2)
(2)
(3)
- 2
- 2
10
10
(3)
- 3
- 3
10
10
- 1
2
3
4
- 1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 5
Tamb = 25 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
006aab773
006aab774
3
3
10
10
R
CEsat
(Ω)
R
CEsat
(Ω)
2
2
10
10
10
1
10
1
(1)
(2)
(1)
(2)
- 1
- 1
10
10
(3)
(3)
- 2
- 2
10
10
- 1
2
3
I
4
- 1
2
3
I
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
(mA)
C
C
IC/IB = 5
Tamb = 25 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
©
PBHV8215Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 July 2023
7 / 12
Nexperia
PBHV8215Z
150 V, 2 A NPN high-voltage low VCEsat transistor
11. Test information
V
V
CC
BB
R
R
C
B
V
o
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
R2
V
DUT
I
R1
mlb826
Fig. 12. Test circuit for switching times
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
6.7
6.3
3.1
2.9
1.8
1.5
4
1.1
0.7
7.3
3.7
6.7 3.3
1
2
3
0.8
0.6
0.32
0.22
2.3
4.6
Dimensions in mm
04-11-10
Fig. 13. Package outline SC-73 (SOT223)
©
PBHV8215Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 July 2023
8 / 12
Nexperia
PBHV8215Z
150 V, 2 A NPN high-voltage low VCEsat transistor
13. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
solder resist
4
6.1
3.9
7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig. 14. Reflow soldering footprint for SC-73 (SOT223)
8.9
6.7
1.9
solder lands
4
solder resist
6.2
8.7
occupied area
Dimensions in mm
1
2
3
preferred transport
direction during soldering
1.9
(3×)
2.7
2.7
1.9
(2×)
1.1
sot223_fw
Fig. 15. Wave soldering footprint for SC-73 (SOT223)
©
PBHV8215Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 July 2023
9 / 12
Nexperia
PBHV8215Z
150 V, 2 A NPN high-voltage low VCEsat transistor
14. Revision history
Table 8. Revision history
Data sheet ID
PBHV8215Z v.2
Modifications:
Release date
20230712
Data sheet status
Change notice
Supersedes
Product data sheet
-
PBHV8215Z_1
•
The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia.
•
•
Legal texts have been adapted to the new company name where appropriate.
Section "Packing information" removed.
PBHV8215Z_1
20091111
Product data sheet
-
-
©
PBHV8215Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 July 2023
10 / 12
Nexperia
PBHV8215Z
150 V, 2 A NPN high-voltage low VCEsat transistor
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
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Definitions
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internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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concluded only the terms and conditions of the respective agreement shall
apply. Nexperia hereby expressly objects to applying the customer’s general
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data sheet shall define the specification of the product as agreed between
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agreed otherwise in writing. In no event however, shall an agreement be
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Export control — This document as well as the item(s) described herein
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Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
©
PBHV8215Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 July 2023
11 / 12
Nexperia
PBHV8215Z
150 V, 2 A NPN high-voltage low VCEsat transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................5
11. Test information..........................................................8
12. Package outline.......................................................... 8
13. Soldering..................................................................... 9
14. Revision history........................................................10
15. Legal information......................................................11
© Nexperia B.V. 2023. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 12 July 2023
©
PBHV8215Z
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 July 2023
12 / 12
相关型号:
PBHV8540T,215
PBHV8540T - 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor TO-236 3-Pin
NXP
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