PBHV9040X [NEXPERIA]
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistorProduction;型号: | PBHV9040X |
厂家: | Nexperia |
描述: | 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistorProduction |
文件: | 总15页 (文件大小:363K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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9
8
T
O
PBHV9040X
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
S
9 December 2013
Product data sheet
1. General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89
(SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8540X.
2. Features and benefits
High voltage
•
•
•
•
•
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
3. Applications
Electronic ballast for fluorescent lighting
LED driver for LED chain module
LCD backlighting
High Intensity Discharge (HID) front lighting
Automotive motor management
Hook switch for wired telecom
Switch mode power supply
•
•
•
•
•
•
•
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
VCESM
collector-emitter peak VBE = 0 V
voltage
-
-
-500
V
VCEO
collector-emitter
voltage
open base
-
-
-400
V
A
IC
collector current
DC current gain
-
-
-0.25
-
hFE
VCE = -10 V; IC = -50 mA; Tamb = 25 °C
100
200
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NXP Semiconductors
PBHV9040X
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
2
1
1
2
3
E
C
B
emitter
collector
base
3
3
2
1
sym079
SOT89
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBHV9040X
SOT89
plastic surface-mounted package; die pad for good heat transfer; SOT89
3 leads
7. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
PBHV9040X
%4E
[1] % = placeholder for manufacturing site code
PBHV9040X
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Product data sheet
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2 / 14
NXP Semiconductors
PBHV9040X
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VCESM
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
-500
-400
-500
-6
Unit
V
collector-base voltage
collector-emitter voltage
collector-emitter peak voltage
emitter-base voltage
collector current
-
-
V
VBE = 0 V
-
V
open collector
-
V
-
-0.25
-0.5
-200
0.52
1.5
A
ICM
peak collector current
peak base current
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
-
A
IBM
-
mA
W
W
°C
°C
°C
Ptot
total power dissipation
[1]
[2]
-
-
Tj
junction temperature
ambient temperature
storage temperature
-
150
150
150
Tamb
Tstg
-55
-65
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
006aab846
2.0
P
tot
(W)
1.6
(1)
1.2
0.8
0.4
0.0
(2)
- 75
- 25
25
75
125
175
(°C)
T
amb
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, standard footprint
Fig. 1. Power derating curves
PBHV9040X
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Product data sheet
9 December 2013
3 / 14
NXP Semiconductors
PBHV9040X
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
240
83
Unit
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
-
-
-
-
Rth(j-sp)
thermal resistance
from junction to solder
point
-
-
20
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
006aab847
3
10
Z
th(j-a)
duty cycle = 1
(K/W)
0.75
0.5
0.33
0.2
2
10
0.1
0.05
10
0.02
0.01
0
1
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab848
3
10
Z
th(j-a)
(K/W)
2
duty cycle = 1
10
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
0
1
0.01
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBHV9040X
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Product data sheet
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4 / 14
NXP Semiconductors
PBHV9040X
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
-100
-10
Unit
nA
ICBO
collector-base cut-off
current
VCB = -320 V; IE = 0 A; Tamb = 25 °C
VCB = -320 V; IE = 0 A; Tj = 150 °C
-
-
-
-
-
-
µA
ICES
IEBO
hFE
collector-emitter cut-off VCE = -320 V; VBE = 0 V; Tamb = 25 °C
current
-100
nA
emitter-base cut-off
current
VEB = -4 V; IC = 0 A; Tamb = 25 °C
-
-
-100
nA
DC current gain
VCE = -10 V; IC = -50 mA; Tamb = 25 °C
100
80
200
200
-
-
VCE = -10 V; IC = -100 mA;
Tamb = 25 °C
VCE = -10 V; IC = -250 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
10
-
25
-
VCEsat
collector-emitter
IC = -100 mA; IB = -20 mA;
Tamb = 25 °C
-110
-1
-200
-1.1
mV
V
saturation voltage
VBEsat
base-emitter saturation IC = -100 mA; IB = -20 mA; pulsed;
-
voltage
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
td
tr
delay time
rise time
VCC = -2 V; IC = -0.15 A; IBon = -0.03 A;
IBoff = 0.03 A; Tamb = 25 °C
-
-
-
-
-
-
-
9
-
-
-
-
-
-
-
ns
1810
1819
715
1085
1800
55
ns
ton
ts
turn-on time
storage time
fall time
ns
ns
tf
ns
toff
fT
turn-off time
transition frequency
ns
VCE = -10 V; IC = -10 mA; f = 100 MHz;
Tamb = 25 °C
MHz
Cc
Ce
collector capacitance
emitter capacitance
VCB = -20 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
-
7
-
-
pF
pF
VEB = -0.5 V; IC = 0 A; ic = 0 A;
f = 1 MHz; Tamb = 25 °C
150
PBHV9040X
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Product data sheet
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5 / 14
NXP Semiconductors
PBHV9040X
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
006aab182
006aab183
400
- 0.5
I
(mA) = - 140
- 126
B
I
C
h
(A)
FE
- 0.4
- 112
- 98
300
200
100
(1)
(2)
- 84
- 70
- 0.3
- 0.2
- 0.1
0
- 56
- 42
- 28
- 14
(3)
0
- 10
- 1
2
3
- 1
- 10
- 10
- 10
0
- 1
- 2
- 3
- 4
- 5
I
(mA)
V
(V)
CE
C
VCE = -10 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
Fig. 4. DC current gain as a function of collector
current; typical values
006aab184
006aab185
- 1.2
- 1.3
V
BE
(V)
V
BEsat
(V)
(1)
(2)
(3)
- 0.8
- 0.9
- 0.5
- 0.1
(1)
(2)
(3)
- 0.4
0
- 1
- 10
2
3
- 1
- 10
2
3
4
- 1
- 10
- 10
- 10
- 1
- 10
- 10
- 10
- 10
I (mA)
C
I
(mA)
C
VCE = -10 V
IC/IB = 5
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 6. Base-emitter voltage as a function of collector Fig. 7. Base-emitter saturation voltage as a function of
current; typical values collector current; typical values
PBHV9040X
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Product data sheet
9 December 2013
6 / 14
NXP Semiconductors
PBHV9040X
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
006aab186
006aab187
- 10
- 10
V
V
CEsat
(V)
CEsat
(V)
- 1
- 1
(1)
(2)
(3)
(1)
(2)
(3)
- 1
- 1
- 10
- 10
- 2
- 2
- 10
- 10
- 1
2
3
- 1
2
3
- 10
- 1
- 10
- 10
- 10
- 10
- 1
- 10
- 10
- 10
I
(mA)
I (mA)
C
C
IC/IB = 5
Tamb = 25 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
006aab188
006aab189
4
4
10
10
R
CEsat
(Ω)
R
CEsat
(Ω)
3
3
10
10
2
2
10
10
10
10
(1)
(1)
(2)
(3)
(2)
(3)
1
1
- 1
- 1
10
10
- 1
2
3
- 1
2
3
10
- 1
- 10
- 10
- 10
10
- 1
- 10
- 10
- 10
I
(mA)
I (mA)
C
C
IC/IB = 5
Tamb = 25 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
PBHV9040X
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Product data sheet
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NXP Semiconductors
PBHV9040X
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
11. Test information
-
I
B
input pulse
90 %
(idealized waveform)
-
I
(100 %)
Bon
10 %
-
I
Boff
output pulse
-
(idealized waveform)
I
C
90 %
-
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
006aaa266
t
t
off
on
Fig. 12. BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
450 Ω
(probe)
oscilloscope
450 Ω
oscilloscope
R2
V
DUT
I
R1
mgd624
Fig. 13. Test circuit for switching times
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PBHV9040X
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Product data sheet
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8 / 14
NXP Semiconductors
PBHV9040X
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
12. Package outline
Plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads
SOT89
B
A
D
b
p3
E
H
E
L
p
1
2
3
c
b
p2
w
M
B
b
p1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
b
c
D
E
e
e
H
E
L
p
w
p1
p2
p3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
4.25
3.75
1.2
0.8
mm
3.0
1.5
0.13
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
SC-62
06-03-16
06-08-29
SOT89
TO-243
Fig. 14. Package outline SOT89
PBHV9040X
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Product data sheet
9 December 2013
9 / 14
NXP Semiconductors
PBHV9040X
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
13. Soldering
4.75
2.25
2
1.9
1.2
0.2
solder lands
0.85
1.7
solder resist
1.2
4.6
4.85
solder paste
0.5
occupied area
1
1.1
(3×)
(2×)
Dimensions in mm
1.5
1.5
0.6
(3×)
0.7
(3×)
3.95
sot089_fr
Fig. 15. Reflow soldering footprint for SOT89
6.6
2.4
3.5
solder lands
7.6
0.5
solder resist
occupied area
1.8
Dimensions in mm
(2×)
preferred transport direction during soldering
1.9
1.9
1.5
(2×)
0.7
5.3
sot089_fw
Fig. 16. Wave soldering footprint for SOT89
PBHV9040X
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NXP Semiconductors
PBHV9040X
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PBHV9040X v.1
20131209
Product data sheet
-
-
PBHV9040X
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Product data sheet
9 December 2013
11 / 14
NXP Semiconductors
PBHV9040X
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
In no event shall NXP Semiconductors be liable for any indirect, incidental,
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with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use in automotive applications — This NXP
Product
[short] data
sheet
Production
This document contains the product
specification.
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
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[1] Please consult the most recently issued document before initiating or
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[2] The term 'short data sheet' is explained in section "Definitions".
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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PBHV9040X
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Product data sheet
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12 / 14
NXP Semiconductors
PBHV9040X
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PBHV9040X
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
9 December 2013
13 / 14
NXP Semiconductors
PBHV9040X
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
16. Contents
1
2
3
4
5
6
7
8
9
10
General description ............................................... 1
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................3
Thermal characteristics .........................................4
Characteristics .......................................................5
11
Test information .....................................................8
11.1
Quality information ............................................... 8
12
13
14
Package outline ..................................................... 9
Soldering .............................................................. 10
Revision history ...................................................11
15
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
15.1
15.2
15.3
15.4
© NXP N.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 9 December 2013
PBHV9040X
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
9 December 2013
14 / 14
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