PBLS1503Y [NEXPERIA]
15 V PNP BISS loadswitchProduction;
| 型号： | PBLS1503Y |
| 厂家： | 
Nexperia |
| 描述： | 15 V PNP BISS loadswitchProduction 开关 光电二极管 晶体管 |
| 文件： | 总15页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PBLS1503Y; PBLS1503V
15 V PNP BISS loadswitch
Rev. 03 — 24 August 2009
Product data sheet
1. Product profile
1.1 General description
Low VCEsat PNP transistor and NPN resistor-equipped transistor in one package.
Table 1.
Product overview
Type number
Package
NXP
JEITA
SC-88
-
PBLS1503Y
PBLS1503V
SOT363
SOT666
1.2 Features
I Low VCEsat (BISS) and resistor-equipped transistor in one package
I Low ‘threshold’ voltage (< 1 V) compared to MOSFET
I Low drive power required
I Space-saving solution
I Reduction of component count
1.3 Applications
I Supply line switches
I Battery charger switches
I High-side switches for LEDs, drivers and backlights
I Portable equipment
1.4 Quick reference data
Table 2.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
TR1; PNP; low VCEsat transistor
VCEO
IC
collector-emitter voltage
collector current (DC)
equivalent on-resistance
open base
-
-
-
-
−15
V
-
−500
500
mA
mΩ
RCEsat
IC = −500 mA;
300
IB = −50 mA
TR2; NPN; resistor-equipped transistor
VCEO collector-emitter voltage
open base
-
-
50
V
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
Table 2.
Quick reference data …continued
Symbol
IO
Parameter
Conditions
Min
-
Typ
-
Max
100
13
Unit
mA
kΩ
output current (DC)
bias resistor 1 (input)
bias resistor ratio
R1
7
10
1
R2/R1
0.8
1.2
2. Pinning information
Table 3.
Discrete pinning
Description
Pin
1
Simplified outline
Symbol
emitter TR1
6
5
4
6
5
4
2
base TR1
3
output (collector) TR2
GND (emitter) TR2
input (base) TR2
collector TR1
R1
R2
4
TR2
5
TR1
1
1
2
3
6
001aab555
2
3
sym036
3. Ordering information
Table 4.
Ordering information
Type number Package
Name
Description
Version
PBLS1503Y
PBLS1503V
SC-88
-
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
SOT363
SOT666
4. Marking
Table 5.
Marking codes
Type number
PBLS1503Y
PBLS1503V
Marking code[1]
*C3
C3
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PBLS1503Y_PBLS1503V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 24 August 2009
2 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Transistor TR1: PNP
VCBO
VCEO
VEBO
IC
collector-base voltage
open emitter
open base
-
-
-
-
-
-
-
-
−15
−15
−6
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
V
open collector
V
−500
−1
mA
A
ICM
tp ≤ 1 ms; δ ≤ 0.02
tp ≤ 1 ms; δ ≤ 0.02
IB
−50
−100
200
mA
mA
mW
IBM
peak base current
[1]
Ptot
total power dissipation
Tamb ≤ 25 °C
Transistor TR2: NPN
VCBO
VCEO
VEBO
VI
collector-base voltage
open emitter
open base
-
-
-
-
-
-
-
-
-
50
50
10
V
V
V
collector-emitter voltage
emitter-base voltage
input voltage
open collector
positive
+40
−10
100
100
200
V
negative
V
IO
output current (DC)
peak collector current
total power dissipation
mA
mA
mW
ICM
[1]
Ptot
T
amb ≤ 25 °C
amb ≤ 25 °C
Per device
Ptot
total power dissipation
storage temperature
junction temperature
ambient temperature
T
-
300
mW
°C
Tstg
−65
-
+150
150
Tj
°C
Tamb
−65
+150
°C
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Per device
Rth(j-a)
Parameter
Conditions
Min
Typ
Max Unit
thermal resistance from
junction to ambient
in free air
[1]
SOT363
SOT666
-
-
-
-
416
416
K/W
K/W
[1][2]
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
PBLS1503Y_PBLS1503V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 24 August 2009
3 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified
Symbol Parameter Conditions
Transistor TR1: PNP
Min
Typ
Max
Unit
ICBO
collector-base cut-off VCB = −15 V; IE = 0 A
-
-
-
-
-
-
−100
−50
nA
µA
nA
current
VCB = −15 V; IE = 0 A; Tj = 150 °C
VCE = −15 V; VBE = 0 V
ICES
IEBO
hFE
collector-emitter
cut-off current
−100
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−100
nA
DC current gain
VCE = −2 V; IC = −10 mA
VCE = −2 V; IC = −100 mA
VCE = −2 V; IC = −500 mA
IC = −10 mA; IB = −0.5 mA
IC = −200 mA; IB = −10 mA
IC = −500 mA; IB = −50 mA
IC = −500 mA; IB = −50 mA
200
-
-
[1]
[1]
150
-
-
90
-
-
-
VCEsat
collector-emitter
saturation voltage
-
−25
−150
−250
500
mV
mV
mV
mΩ
-
-
[1]
[1]
-
-
RCEsat
VBEsat
VBEon
fT
equivalent
-
300
on-resistance
[1]
[1]
base-emitter
saturation voltage
IC = −500 mA; IB = −50 mA
VCE = −2 V; IC = −100 mA
-
-
−1.1
−0.9
-
V
base-emitter turn-on
voltage
-
-
V
transition frequency
VCE = −5 V; IC = −100 mA;
100
-
280
-
MHz
pF
f = 100 MHz
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
10
f = 1 MHz
Transistor TR2: NPN
ICBO collector-base cut-off VCB = 50 V; IE = 0 A
-
-
100
nA
current
ICEO
collector-emitter
cut-off current
VCE = 30 V; IB = 0 A
-
-
-
-
-
-
1
µA
µA
µA
VCE = 30 V; IB = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A
50
400
IEBO
emitter-base cut-off
current
hFE
DC current gain
VCE = 5 V; IC = 5 mA
30
-
-
-
-
VCEsat
collector-emitter
IC = 10 mA; IB = 0.5 mA
150
mV
saturation voltage
VI(off)
VI(on)
R1
off-state input voltage VCE = 5 V; IC = 100 µA
on-state input voltage VCE = 0.3 V; IC = 10 mA
bias resistor 1 (input)
-
1.1
1.8
10
1
0.8
-
V
2.5
7
V
13
1.2
2.5
kΩ
R2/R1
Cc
bias resistor ratio
0.8
-
collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz
-
pF
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02
PBLS1503Y_PBLS1503V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 24 August 2009
4 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
001aaa181
001aaa185
3
600
h
−10
V
CEsat
FE
(1)
(mV)
(1)
2
400
−10
(2)
(3)
(2)
(3)
200
−10
−1
0
−10
−1
2
3
−1
2
3
−1
−10
−10
−10
−10
−1
−10
−10
−10
I
(mA)
I (mA)
C
C
VCE = −2 V
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 1. TR1(PNP): DC current gain as a function of
collector current; typical values
Fig 2. TR1(PNP): Collector-emitter saturation voltage
as a function of collector current; typical
values
001aaa183
001aaa184
−1100
−1200
V
V
BEsat
BE
(mV)
(mV)
−900
−1000
(1)
(2)
(1)
(2)
−700
−500
−300
−100
−800
−600
−400
−200
(3)
(3)
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
−10
−1
−10
−10
−10
I
(mA)
I (mA)
C
C
VCE = −2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. TR1(PNP): Base-emitter voltage as a function
of collector current; typical values
Fig 4. TR1(PNP): Base-emitter saturation voltage as
a function of collector current; typical values
PBLS1503Y_PBLS1503V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 24 August 2009
5 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
001aaa182
001aaa186
3
−1200
10
R
(1)
CEsat
(Ω)
I
C
(2)
(3)
(4)
(mA)
2
10
(5)
(6)
−800
(7)
(8)
10
(9)
−400
(1)
1
(10)
(2)
(3)
−1
0
10
−1
2
3
0
−2
−4
−6
−8
V
−10
(V)
−10
−1
−10
−10
−10
I (mA)
C
CE
Tamb = 25 °C
IC/IB = 20
(1) IB = − 7.0 mA
(2) IB = − 6.3 mA
(3) IB = − 5.6 mA
(4) IB = − 4.9 mA
(5) IB = − 4.2 mA
(6) IB = − 3.5 mA
(7) IB = − 2.8 mA
(8) IB = − 2.1 mA
(9) IB = − 1.4 mA
(10) IB = − 0.7 mA
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 5. TR1(PNP): Collector current as a function of
collector-emitter voltage; typical values
Fig 6. TR1(PNP): Equivalent on-resistance as a
function of collector current; typical values
PBLS1503Y_PBLS1503V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 24 August 2009
6 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
006aaa005
006aaa004
3
10
−1
R
CEsat
V
CEsat
(V)
(Ω)
2
10
−1
−10
−10
−10
(1)
(1)
(2)
10
(2)
(3)
−2
1
(3)
−1
−3
10
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
−10
−1
−10
−10
−10
I
(mA)
I
(mA)
C
C
Tamb = 25 °C
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 7. TR1(PNP): Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 8. TR1(PNP): Equivalent-on resistance as a
function of collector current; typical values
PBLS1503Y_PBLS1503V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 24 August 2009
7 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
006aaa034
006aaa035
3
10
1
(1)
(2)
(3)
h
FE
V
CEsat
(V)
2
10
(1)
(2)
(3)
−1
10
10
−2
1
10
10
−1
2
2
1
10
10
1
10
10
I
(mA)
I (mA)
C
C
VCE = 5 V
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 9. TR2(NPN): DC current gain as a function of
collector current; typical values
Fig 10. TR2(NPN): Collector-emitter saturation voltage
as a function of collector current; typical
values
006aaa036
006aaa037
10
10
V
I(on)
V
I(off)
(V)
(V)
(1)
(2)
(1)
(2)
(3)
1
1
(3)
−1
−1
10
10
−1
2
−2
−1
10
1
10
10
10
10
1
10
I
(mA)
I (mA)
C
C
VCE = 0.3 V
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 11. TR2(NPN): On-state input voltage as a function
of collector current; typical values
Fig 12. TR2(NPN): Off-state input voltage as a function
of collector current; typical values
PBLS1503Y_PBLS1503V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 24 August 2009
8 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
8. Package outline
Plastic surface-mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-08
06-03-16
SOT363
SC-88
Fig 13. Package outline SOT363 (SC-88)
PBLS1503Y_PBLS1503V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 24 August 2009
9 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
Plastic surface-mounted package; 6 leads
SOT666
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index
A
c
1
2
3
e
1
b
p
w
M
A
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-08
06-03-16
SOT666
Fig 14. Package outline SOT666
PBLS1503Y_PBLS1503V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 24 August 2009
10 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PBLS1503Y
PBLS1503V
Package
SOT363
SOT666
Description
Packing quantity
3000
-115
-125
-
4000
10000
−135
-165
-
[2]
[3]
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
4 mm pitch, 8 mm tape and reel
-
-
-115
[1] For further information and the availability of packing methods, see Section 12.
[2] T1: normal taping
[3] T2: reverse taping
PBLS1503Y_PBLS1503V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 24 August 2009
11 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
10. Revision history
Table 10. Revision history
Document ID
Release date
Data sheet status
Product data sheet
Change notice Supersedes
PBLS1503Y_PBLS1503V_2
PBLS1503Y_PBLS1503V_3 20090824
-
Modifications:
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
• Table 3 “Discrete pinning”: amended
• Figure 13 “Package outline SOT363 (SC-88)”: updated
• Figure 14 “Package outline SOT666”: updated
PBLS1503Y_PBLS1503V_2 20041125
Product data sheet
-
PBLS1503V_1
-
PBLS1503V_1
20031107
Product specification
-
PBLS1503Y_PBLS1503V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 24 August 2009
12 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PBLS1503Y_PBLS1503V_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 24 August 2009
13 of 14
PBLS1503Y; PBLS1503V
NXP Semiconductors
15 V PNP BISS loadswitch
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information. . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 August 2009
Document identifier: PBLS1503Y_PBLS1503V_3
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