PBLS2003D [NEXPERIA]

20 V PNP BISS loadswitchProduction;


型号：	PBLS2003D
厂家：	Nexperia
描述：	20 V PNP BISS loadswitchProduction 开关光电二极管晶体管
文件：	总17页 (文件大小：275K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

application markets

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

the references to Nexperia, as shown below.

Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,

use http://www.nexperia.com

Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use

salesaddresses@nexperia.com (email)

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

the version, as shown below:

reserved

Should be replaced with:

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail

or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and

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Kind regards,

Team Nexperia

PBLS2003D

20 V PNP BISS loadswitch

Rev. 02 — 27 August 2009

Product data sheet

1. Product proﬁle

1.1 General description

PNP low V_CEsatBreakthrough in Small Signal (BISS) transistor and NPN Resistor-

Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)

plastic package.

1.2 Features

I Low V_CEsat(BISS) and resistor-equipped transistor in one package

I Low threshold voltage (< 1 V) compared to MOSFET

I Low drive power required

I Space-saving solution

I Reduction of component count

1.3 Applications

I Supply line switches

I Battery charger switches

I High-side switches for LEDs, drivers and backlights

I Portable equipment

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

TR1; PNP low V_CEsattransistor

V_CEO

I_C

collector-emitter voltage

collector current (DC)

open base

−20

−1

[1]

R_CEsat

collector-emitter saturation I_C= −1 A;

resistance I_B= −100 mA

185

280

mΩ

TR2; NPN resistor-equipped transistor

V_CEO

I_O

collector-emitter voltage

output current

open base

100

kΩ

bias resistor 1 (input)

bias resistor ratio

R2/R1

0.8

1.2

[1] Pulse test: t_p≤ 300 µs; δ ≤ 0.02

PBLS2003D

NXP Semiconductors

20 V PNP BISS loadswitch

2. Pinning information

Table 2.

Pinning

Description

Simpliﬁed outline

Symbol

emitter TR1

base TR1

output (collector) TR2

GND (emitter) TR2

input (base) TR2

collector TR1

TR2

TR1

sym036

3. Ordering information

Table 3.

Ordering information

Type number Package

Name

Description

Version

PBLS2003D

SC-74

plastic surface mounted package; 6 leads

SOT457

4. Marking

Table 4.

Marking codes

Type number

Marking code

PBLS2003D

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

TR1; PNP low V_CEsattransistor

V_CBO

V_CEO

V_EBO

I_C

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

base current (DC)

open emitter

open base

−20

−5

open collector

−1

I_CM

t_p≤ 300 µs

−2

I_B

−0.3

−0.6

250

350

400

I_BM

peak base current

[1]

[2]

[3]

P_tot

total power dissipation

_amb≤ 25 °C

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Product data sheet

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PBLS2003D

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20 V PNP BISS loadswitch

Table 5.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions

TR2; NPN resistor-equipped transistor

Min

Max

Unit

V_CBO

V_CEO

V_EBO

V_I

collector-base voltage

collector-emitter voltage

emitter-base voltage

input voltage

open emitter

open base

open collector

positive

+40

−10

100

200

negative

I_O

output current

I_CM

peak collector current

total power dissipation

t_p≤ 300 µs

[1]

P_tot

T_amb≤ 25 °C

Per device

P_tot

[1]

[2]

[3]

total power dissipation

400

°C

530

600

T_stg

T_j

storage temperature

junction temperature

ambient temperature

−65

+150

150

°C

T_amb

−65

+150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm².

[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.

006aaa414

0.8

tot

(W)

(1)

(2)

0.6

(3)

0.4

0.2

120

160

(°C)

amb

(1) Ceramic PCB, Al₂O₃, standard footprint

(2) FR4 PCB, mounting pad for collector 1cm²

(3) FR4 PCB, standard footprint

Fig 1. Power derating curves

PBLS2003D_2

Product data sheet

Rev. 02 — 27 August 2009

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PBLS2003D

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20 V PNP BISS loadswitch

6. Thermal characteristics

Table 6.

Symbol

Per device

R_th(j-a)

Thermal characteristics

Parameter

Conditions

Min

Typ Max Unit

[1]

[2]

[3]

thermal resistance from

junction to ambient

in free air

315

236

210

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm².

[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.

006aaa415

duty cycle =

th(j-a)

0.75

(K/W)

0.5

0.33

0.2

0.1

0.05

0.02

0.01

−1

−5

−4

−3

−2

−1

(s)

FR4 PCB, standard footprint

Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical

values

PBLS2003D_2

Product data sheet

Rev. 02 — 27 August 2009

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20 V PNP BISS loadswitch

006aaa463

th(j-a)

δ = 1

0.75

(K/W)

0.5

0.33

0.2

0.1

0.05

0.02

0.01

−5

−4

−3

−2

−1

(s)

FR4 PCB, mounting pad for collector 1cm²

Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical

values

006aaa464

th(j-a)

δ = 1

0.75

(K/W)

0.5

0.33

0.2

0.1

0.05

0.02

0.01

−5

−4

−3

−2

−1

(s)

Ceramic PCB, Al₂O₃, standard footprint

Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical

values

PBLS2003D_2

Product data sheet

Rev. 02 — 27 August 2009

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PBLS2003D

NXP Semiconductors

20 V PNP BISS loadswitch

7. Characteristics

Table 7.

Characteristics

T_amb= 25 °C unless otherwise speciﬁed

Symbol Parameter

Conditions

Min Typ

Max

Unit

TR1; PNP low V_CEsattransistor

I_CBO

collector-base cut-off V_CB= −20 V; I_E= 0 A

−0.1

−50

µA

current

V_CB= −20 V; I_E= 0 A;

T_j= 150 °C

I_CES

I_EBO

h_FE

collector-emitter

cut-off current

V_CE= −20 V; V_BE= 0 V

−0.1

µA

emitter-base cut-off

current

V_EB= −5 V; I_C= 0 A

DC current gain

V_CE= −2 V; I_C= −1 mA

V_CE= −2 V; I_C= −100 mA

V_CE= −2 V; I_C= −500 mA

V_CE= −2 V; I_C= −1 A

220 495

220 440

220 310

155 220

[1]

V_CE= −2 V; I_C= −2 A

120

V_CEsat

collector-emitter

saturation voltage

I_C= −100 mA; I_B= −1 mA

I_C= −500 mA; I_B= −50 mA

I_C= −1 A; I_B= −50 mA

I_C= −1 A; I_B= −100 mA

−55

−90

[1]

−100

−200

−185

185

−150 mV

−300 mV

−280 mV

R_CEsat

V_BEsat

collector-emitter

saturation resistance

280

mΩ

[1]

base-emitter

saturation voltage

I_C= −1 A; I_B= −50 mA

I_C= −1 A; I_B= −100 mA

V_CE= −5 V; I_C= −1 A

−0.95 −1.1

−1 −1.1

−0.85 −1.1

V_BEon

base-emitter

turn-on voltage

t_d

t_r

delay time

I_C= −1 A; I_Bon= −50 mA;

I_Boff= 50 mA

rise time

140

185

t_on

t_s

turn-on time

storage time

fall time

t_f

t_off

f_T

turn-off time

transition frequency

I_C= −50 mA; V_CE= −10 V;

150 185

MHz

f = 100 MHz

C_c

collector capacitance V_CB= −10 V; I_E= i_e= 0 A;

f = 1 MHz

PBLS2003D_2

Product data sheet

Rev. 02 — 27 August 2009

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PBLS2003D

NXP Semiconductors

20 V PNP BISS loadswitch

Table 7.

Characteristics …continued

T_amb= 25 °C unless otherwise speciﬁed

Symbol Parameter

Conditions

Min Typ

Max

Unit

TR2; NPN resistor-equipped transistor

I_CBO

collector-base cut-off V_CB= 50 V; I_E= 0 A

100

current

I_CEO

collector-emitter

cut-off current

V_CE= 30 V; I_B= 0 A

µA

V_CE= 30 V; I_B= 0 A;

T_j= 150 °C

I_EBO

emitter-base cut-off

current

V_EB= 5 V; I_C= 0 A

400

µA

h_FE

DC current gain

V_CE= 5 V; I_C= 5 mA

V_CEsat

collector-emitter

I_C= 10 mA; I_B= 0.5 mA

150

saturation voltage

V_I(off)

V_I(on)

off-state input voltage V_CE= 5 V; I_C= 100 µA

on-state input voltage V_CE= 0.3 V; I_C= 10 mA

bias resistor 1 (input)

1.1

1.8

0.8

2.5

1.2

2.5

kΩ

R2/R1

C_c

bias resistor ratio

0.8

collector capacitance V_CB= 10 V; I_E= i_e= 0 A;

f = 1 MHz

[1] Pulse test: t_p≤ 300 µs; δ ≤ 0.02

PBLS2003D_2

Product data sheet

Rev. 02 — 27 August 2009

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PBLS2003D

NXP Semiconductors

20 V PNP BISS loadswitch

006aaa416

006aaa417

1000

−1

CEsat

(V)

800

(1)

(2)

−1

−10

600

400

200

(1)

(2)

(3)

−2

(3)

−3

−1

−10

−1

−10

(mA)

−10

−1

−10

(mA)

V_CE= −2 V

I_C/I_B= 20

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig 5. TR1 (PNP): DC current gain as a function of

collector current; typical values

Fig 6. TR1 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

006aaa418

006aaa419

−1.0

−1.2

BEsat

(V)

−1.0

−0.8

−0.6

−0.4

−0.2

(1)

(2)

(3)

−0.8

(1)

(2)

(3)

−0.6

−0.4

−0.2

−1

−10

−1

−10

(mA)

−10

−1

−10

(mA)

V_CE= −5 V

I_C/I_B= 20

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig 7. TR1 (PNP): Base-emitter voltage as a function

of collector current; typical values

Fig 8. TR1 (PNP): Base-emitter saturation voltage as

a function of collector current; typical values

PBLS2003D_2

Product data sheet

Rev. 02 — 27 August 2009

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PBLS2003D

NXP Semiconductors

20 V PNP BISS loadswitch

006aaa420

006aaa421

−2.0

−11.7 mA

−10.4 mA

= −13 mA

(A)

CEsat

−9.1 mA

−7.8 mA

−6.5 mA

(Ω)

−1.6

−5.2 mA

−3.9 mA

−1.2

−0.8

−0.4

−0

−2.6 mA

−1.3 mA

(1)

(2)

(3)

−1

−0

−2

−4

−6

−10

−1

−10

(mA)

(V)

T_amb= 25 °C

I_C/I_B= 20

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig 9. TR1 (PNP): Collector current as a function of

collector-emitter voltage; typical values

Fig 10. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;

typical values

006aaa422

006aaa423

−1

CEsat

(V)

(Ω)

−1

−10

(1)

(2)

−2

(3)

(1)

(2)

(3)

−3

−1

−10

−1

−10

(mA)

−10

−1

−10

(mA)

T_amb= 25 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

Fig 11. TR1 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

Fig 12. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;

typical values

PBLS2003D_2

Product data sheet

Rev. 02 — 27 August 2009

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PBLS2003D

NXP Semiconductors

20 V PNP BISS loadswitch

006aaa034

006aaa035

(1)

(2)

(3)

CEsat

(V)

(1)

(2)

(3)

−1

−2

−1

(mA)

I (mA)

V_CE= 5 V

I_C/I_B= 20

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −40 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −40 °C

Fig 13. TR2 (NPN): DC current gain as a function of

collector current; typical values

Fig 14. TR2 (NPN): Collector-emitter saturation

voltage as a function of collector current;

typical values

006aaa036

006aaa037

I(on)

I(off)

(V)

(1)

(2)

(1)

(2)

(3)

−1

−2

−1

(mA)

I (mA)

V_CE= 0.3 V

V_CE= 5 V

(1) T_amb= −40 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= −40 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig 15. TR2 (NPN): On-state input voltage as a

function of collector current; typical values

Fig 16. TR2 (NPN): Off-state input voltage as a

function of collector current; typical values

PBLS2003D_2

Product data sheet

Rev. 02 — 27 August 2009

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PBLS2003D

NXP Semiconductors

20 V PNP BISS loadswitch

8. Test information

−

input pulse

90 %

(idealized waveform)

−

(100 %)

Bon

10 %

−

Boff

output pulse

−

(idealized waveform)

90 %

−

(100 %)

10 %

006aaa266

off

Fig 17. BISS transistor switching time deﬁnition

(probe)

oscilloscope

450 Ω

DUT

mgd624

I_C= −1 A; I_Bon= −50 mA; I_Boff= 50 mA; R1 = open; R2 = 45 Ω; R_B= 145 Ω; R_C= 10 Ω

Fig 18. Test circuit for switching times

PBLS2003D_2

Product data sheet

Rev. 02 — 27 August 2009

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PBLS2003D

NXP Semiconductors

20 V PNP BISS loadswitch

9. Package outline

3.1

2.7

1.1

0.9

0.6

0.2

3.0 1.7

2.5 1.3

pin 1 index

0.26

0.10

0.40

0.25

0.95

1.9

Dimensions in mm

04-11-08

Fig 19. Package outline SOT457 (SC-74)

10. Packing information

Table 8.

Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.^[1]

Type number Package

Description

Packing quantity

3000

-115

-125

10000

-135

[2]

[3]

PBLS2003D

SOT457

4 mm pitch, 8 mm tape and reel; T1

4 mm pitch, 8 mm tape and reel; T2

-165

[1] For further information and the availability of packing methods, see Section 14.

[2] T1: normal taping

[3] T2: reverse taping

PBLS2003D_2

Product data sheet

Rev. 02 — 27 August 2009

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NXP Semiconductors

20 V PNP BISS loadswitch

11. Soldering

3.45

1.95

solder lands

solder resist

occupied area

solder paste

0.95

0.45 0.55

2.825

3.30

1.60

1.70

3.10

3.20

msc422

Dimensions in mm

Fig 20. Reﬂow soldering footprint

5.30

solder lands

solder resist

occupied area

5.05

0.45 1.45 4.45

msc423

1.40

4.30

Dimensions in mm

Fig 21. Wave soldering footprint

PBLS2003D_2

Product data sheet

Rev. 02 — 27 August 2009

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20 V PNP BISS loadswitch

12. Revision history

Table 9.

Revision history

Document ID

PBLS2003D_2

Modiﬁcations:

Release date

Data sheet status

Change notice

Supersedes

20090827

Product data sheet

PBLS2003D_1

• This data sheet was changed to reﬂect the new company name NXP Semiconductors,

including new legal deﬁnitions and disclaimers. No changes were made to the technical

content.

• Figure 21 “Wave soldering footprint”: updated

PBLS2003D_1

20050624

Product data sheet

PBLS2003D_2

Product data sheet

Rev. 02 — 27 August 2009

14 of 16

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20 V PNP BISS loadswitch

13. Legal information

13.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Deﬁnition

Objective [short] data sheet

This document contains data from the objective speciﬁcation for product development.

This document contains data from the preliminary speciﬁcation.

This document contains the product speciﬁcation.

Preliminary [short] data sheet Qualiﬁcation

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Deﬁnitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

13.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

PBLS2003D_2

Product data sheet

Rev. 02 — 27 August 2009

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20 V PNP BISS loadswitch

15. Contents

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

Test information. . . . . . . . . . . . . . . . . . . . . . . . 11

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12

Packing information. . . . . . . . . . . . . . . . . . . . . 12

Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14

Legal information. . . . . . . . . . . . . . . . . . . . . . . 15

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15

Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13.1

13.2

13.3

13.4

Contact information. . . . . . . . . . . . . . . . . . . . . 15

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 27 August 2009

Document identifier: PBLS2003D_2

PBLS2003D [NEXPERIA]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E