PBLS2022D [NEXPERIA]

20 V, 1.8 A PNP BISS loadswitchProduction;


型号：	PBLS2022D
厂家：	Nexperia
描述：	20 V, 1.8 A PNP BISS loadswitchProduction 开关光电二极管晶体管
文件：	总17页 (文件大小：226K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

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PBLS2022D

20 V, 1.8 A PNP BISS loadswitch

Rev. 02 — 6 September 2009

Product data sheet

1. Product proﬁle

1.1 General description

PNP low V_CEsatBreakthrough In Small Signal (BISS) transistor and NPN Resistor-

Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)

plastic package.

1.2 Features

I Low V_CEsat(BISS) and resistor-equipped transistor in one package

I Low threshold voltage (<1 V) compared to MOSFET

I Space-saving solution

I Reduction of component count

I AEC-Q101 qualiﬁed

1.3 Applications

I Supply line switches

I Battery charger switches

I High-side switches for LEDs, drivers and backlights

I Portable equipment

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

TR1; PNP low V_CEsattransistor

V_CEO

I_C

collector-emitter voltage

collector current

open base

−20

−1.8

−3

I_CM

peak collector current

single pulse;

t_p≤ 1 ms

[1]

R_CEsat

collector-emitter saturation I_C= −1.8 A;

117

mΩ

resistance

I_B= −100 mA

TR2; NPN resistor-equipped transistor

V_CEO

I_O

collector-emitter voltage

output current

open base

100

6.1

1.2

kΩ

bias resistor 1 (input)

bias resistor ratio

3.3

0.8

4.7

R2/R1

[1] Pulse test: t_p≤ 300 µs; δ ≤ 0.02.

PBLS2022D

NXP Semiconductors

20 V, 1.8 A PNP BISS loadswitch

2. Pinning information

Table 2.

Pinning

Description

Simpliﬁed outline

Graphic symbol

base TR1

TR2

input (base) TR2

output (collector) TR2

GND (emitter) TR2

collector TR1

TR1

emitter TR1

006aab506

3. Ordering information

Table 3.

Ordering information

Type number Package

Name

Description

Version

SOT457

PBLS2022D

SC-74

plastic surface-mounted package (TSOP6); 6 leads

4. Marking

Table 4.

Marking codes

Type number

Marking code

PBLS2022D

PBLS2022D_2

Product data sheet

Rev. 02 — 6 September 2009

2 of 16

PBLS2022D

NXP Semiconductors

20 V, 1.8 A PNP BISS loadswitch

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

TR1; PNP low V_CEsattransistor

V_CBO

V_CEO

V_EBO

I_C

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current

open emitter

open base

−20

−5

open collector

−1.8

−3

I_CM

peak collector current

single pulse;

t_p≤ 1 ms

I_B

base current

−300

−1

I_BM

peak base current

single pulse;

t_p≤ 1 ms

[1]

[2]

[3]

P_tot

total power dissipation

T_amb≤ 25 °C

370

480

630

TR2; NPN resistor-equipped transistor

V_CBO

V_CEO

V_EBO

V_I

collector-base voltage

collector-emitter voltage

emitter-base voltage

input voltage

open emitter

open base

open collector

positive

+30

−10

100

negative

I_O

output current

I_CM

peak collector current

single pulse;

t_p≤ 1 ms

[1][2]

[3]

P_tot

total power dissipation

_amb≤ 25 °C

200

Per device

[1]

[2]

[3]

P_tot

T_amb≤ 25 °C

480

°C

590

760

T_j

junction temperature

ambient temperature

storage temperature

150

T_amb

T_stg

−55

−65

+150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².

[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.

PBLS2022D_2

Product data sheet

Rev. 02 — 6 September 2009

3 of 16

PBLS2022D

NXP Semiconductors

20 V, 1.8 A PNP BISS loadswitch

006aab507

1000

tot

(mW)

(1)

(2)

800

600

400

200

(3)

−75

−25

125

175

(°C)

amb

(1) Ceramic PCB, Al₂O₃, standard footprint

(2) FR4 PCB, mounting pad for collector 1 cm²

(3) FR4 PCB, standard footprint

Fig 1. Per device: Power derating curves

6. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Per device

R_th(j-a)

Parameter

Conditions

Min

Typ

Max Unit

[1]

[2]

[3]

thermal resistance from

junction to ambient

in free air

260

211

165

100

K/W

R_th(j-sp)

thermal resistance from

junction to solder point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².

[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.

PBLS2022D_2

Product data sheet

Rev. 02 — 6 September 2009

4 of 16

PBLS2022D

NXP Semiconductors

20 V, 1.8 A PNP BISS loadswitch

006aab508

th(j-a)

δ = 1

(K/W)

0.75

0.33

0.50

0.20

0.10

0.02

0.05

0.01

−1

−5

−4

−3

−2

−1

(s)

FR4 PCB, standard footprint

Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

006aab509

th(j-a)

(K/W)

δ = 1

0.75

0.33

0.50

0.20

0.05

0.10

0.02

0.01

−1

−5

−4

−3

−2

−1

(s)

FR4 PCB, mounting pad for collector 1 cm²

Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

PBLS2022D_2

Product data sheet

Rev. 02 — 6 September 2009

5 of 16

PBLS2022D

NXP Semiconductors

20 V, 1.8 A PNP BISS loadswitch

006aab510

th(j-a)

(K/W)

δ = 1

0.75

0.33

0.50

0.20

0.05

0.10

0.02

0.01

−1

−5

−4

−3

−2

−1

(s)

Ceramic PCB, Al₂O₃, standard footprint

Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

7. Characteristics

Table 7.

Characteristics

T_amb= 25 °C unless otherwise speciﬁed.

Symbol Parameter Conditions

TR1; PNP low V_CEsattransistor

Min

Typ

Max Unit

I_CBO

collector-base cut-off V_CB= −20 V; I_E= 0 A

−100 nA

current

V_CB= −20 V; I_E= 0 A;

−50

µA

T_j= 150 °C

I_CES

I_EBO

h_FE

collector-emitter

cut-off current

V_CE= −16 V; V_BE= 0 V

V_EB= −5 V; I_C= 0 A

−100 nA

emitter-base cut-off

current

DC current gain

V_CE= −2 V; I_C= −100 mA

V_CE= −2 V; I_C= −500 mA

V_CE= −2 V; I_C= −1 A

220

420

410

320

260

−45

−85

−80

[1]

220

200

V_CE= −2 V; I_C= −1.8 A

I_C= −0.5 A; I_B= −50 mA

I_C= −1 A; I_B= −50 mA

I_C= −1 A; I_B= −100 mA

I_C= −1.8 A; I_B= −100 mA

I_C= −1 A; I_B= −100 mA

I_C= −1.8 A; I_B= −100 mA

I_C= −0.5 A; I_B= −50 mA

I_C= −1.8 A; I_B= −100 mA

160

V_CEsat

collector-emitter

saturation voltage

−70

−130 mV

−120 mV

−140 −210 mV

R_CEsat

collector-emitter

saturation resistance

120

117

mΩ

V_BEsat

base-emitter

saturation voltage

−0.85 −1

−0.93 −1.1

PBLS2022D_2

Product data sheet

Rev. 02 — 6 September 2009

6 of 16

PBLS2022D

NXP Semiconductors

20 V, 1.8 A PNP BISS loadswitch

Table 7.

Characteristics …continued

T_amb= 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

[1]

V_BEon

base-emitter

V_CE= −10 V; I_C= −1 A

−0.73 −1.1

turn-on voltage

t_d

t_r

delay time

V_CC= −10 V; I_C= −1 A;

I_Bon= −50 mA;

rise time

I_Boff= 50 mA

t_on

t_s

turn-on time

storage time

fall time

270

t_f

t_off

f_T

turn-off time

transition frequency

330

130

I_C= −50 mA; V_CE= −10 V;

MHz

f = 100 MHz

C_c

collector capacitance V_CB= −10 V; I_E= i_e= 0 A;

f = 1 MHz

TR2; NPN resistor-equipped transistor

I_CBOcollector-base cut-off V_CB= 50 V; I_E= 0 A

100

current

I_CEO

collector-emitter

cut-off current

V_CE= 30 V; I_B= 0 A

µA

V_CE= 30 V; I_B= 0 A;

T_j= 150 °C

I_EBO

emitter-base cut-off

current

V_EB= 5 V; I_C= 0 A

900

µA

h_FE

DC current gain

V_CE= 5 V; I_C= 10 mA

I_C= 10 mA; I_B= 0.5 mA

V_CEsat

collector-emitter

150

saturation voltage

V_I(off)

V_I(on)

off-state input voltage V_CE= 5 V; I_C= 100 µA

on-state input voltage V_CE= 0.3 V; I_C= 20 mA

bias resistor 1 (input)

1.1

1.9

4.7

0.5

2.5

3.3

0.8

6.1

1.2

2.5

kΩ

R2/R1

C_c

bias resistor ratio

collector capacitance V_CB= 10 V; I_E= i_e= 0 A;

f = 1 MHz

[1] Pulse test: t_p≤ 300 µs; δ ≤ 0.02.

PBLS2022D_2

Product data sheet

Rev. 02 — 6 September 2009

7 of 16

PBLS2022D

NXP Semiconductors

20 V, 1.8 A PNP BISS loadswitch

006aab511

006aab512

800

−3

(mA) = −16.0

−12.8

−14.4

−11.2

(1)

(2)

(A)

600

−9.6

−6.4

−3.2

−2

−8.0

−4.8

400

200

(3)

−1

−1.6

0.0

−1

−10

−1

−10

(mA)

−0.5

−1.0

−1.5

−2.0

(V)

V_CE= −2 V

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig 5. TR1 (PNP): DC current gain as a function of

collector current; typical values

Fig 6. TR1 (PNP): Collector current as a function of

collector-emitter voltage; typical values

006aab513

006aab514

−1.2

(V)

BEsat

(V)

−1.0

−0.8

−0.6

−0.4

−0.2

(1)

(2)

(3)

(1)

(2)

(3)

−0.8

−0.6

−0.4

−0.2

−1

−10

−1

−10

(mA)

−10

−1

−10

I (mA)

V_CE= −2 V

I_C/I_B= 20

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig 7. TR1 (PNP): Base-emitter voltage as a function

of collector current; typical values

Fig 8. TR1 (PNP): Base-emitter saturation voltage as

a function of collector current; typical values

PBLS2022D_2

Product data sheet

Rev. 02 — 6 September 2009

8 of 16

PBLS2022D

NXP Semiconductors

20 V, 1.8 A PNP BISS loadswitch

006aab515

006aab516

−1

CEsat

(V)

CEsat

(V)

−1

−10

(1)

(2)

(1)

(2)

−2

(3)

−3

−1

−10

−1

−10

(mA)

−10

−1

−10

I (mA)

I_C/I_B= 20

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

Fig 9. TR1 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

Fig 10. TR1 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

006aab517

006aab518

CEsat

(Ω)

(1)

(3)

(2)

(1)

(2)

−1

(3)

−2

−1

−10

−1

−10

(mA)

−10

−1

−10

I (mA)

I_C/I_B= 20

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

Fig 11. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;

typical values

Fig 12. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;

typical values

PBLS2022D_2

Product data sheet

Rev. 02 — 6 September 2009

9 of 16

PBLS2022D

NXP Semiconductors

20 V, 1.8 A PNP BISS loadswitch

006aaa030

(1)

(2)

(3)

−1

(mA)

V_CE= 5 V

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −40 °C

Fig 13. TR2 (NPN): DC current gain as a function of collector current; typical values

006aaa032

006aaa033

I(on)

I(off)

(V)

(1)

(2)

(3)

−1

−2

−1

(mA)

I (mA)

V_CE= 0.3 V

V_CE= 5 V

(1) T_amb= −40 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= −40 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig 14. TR2 (NPN): On-state input voltage as a

function of collector current; typical values

Fig 15. TR2 (NPN): Off-state input voltage as a

function of collector current; typical values

PBLS2022D_2

Product data sheet

Rev. 02 — 6 September 2009

10 of 16

PBLS2022D

NXP Semiconductors

20 V, 1.8 A PNP BISS loadswitch

006aab520

006aaa031

CEsat

(V)

CEsat

(V)

(1)

(2)

(3)

−1

−2

(mA)

I_C/I_B= 20

I_C/I_B= 50; T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −40 °C

Fig 16. TR2 (NPN): Collector-emitter saturation

voltage as a function of collector current;

typical values

Fig 17. TR2 (NPN): Collector-emitter saturation

voltage as a function of collector current;

typical values

PBLS2022D_2

Product data sheet

Rev. 02 — 6 September 2009

11 of 16

PBLS2022D

NXP Semiconductors

20 V, 1.8 A PNP BISS loadswitch

8. Test information

−

input pulse

90 %

(idealized waveform)

−

(100 %)

Bon

10 %

−

Boff

output pulse

−

(idealized waveform)

90 %

−

(100 %)

10 %

006aaa266

off

Fig 18. TR1: BISS transistor switching time deﬁnition

(probe)

oscilloscope

450 Ω

DUT

mgd624

V_CC= −10 V; I_C= −1 A; I_Bon= −50 mA; I_Boff= 50 mA

Fig 19. TR1: Test circuit for switching times

8.1 Quality information

This product has been qualiﬁed in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualiﬁcation for discrete semiconductors, and is

suitable for use in automotive applications.

PBLS2022D_2

Product data sheet

Rev. 02 — 6 September 2009

12 of 16

PBLS2022D

NXP Semiconductors

20 V, 1.8 A PNP BISS loadswitch

9. Package outline

3.1

2.7

1.1

0.9

0.6

0.2

3.0 1.7

2.5 1.3

pin 1 index

0.26

0.10

0.40

0.25

0.95

1.9

Dimensions in mm

04-11-08

Fig 20. Package outline SOT457 (SC-74)

10. Packing information

Table 8.

Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.^[1]

Type number Package Description

Packing quantity

3000

10000

-135

[2]

[3]

PBLS2022D

SOT457 4 mm pitch, 8 mm tape and reel; T1

4 mm pitch, 8 mm tape and reel; T2

-115

-125

-165

[1] For further information and the availability of packing methods, see Section 13.

[2] T1: normal taping

[3] T2: reverse taping

PBLS2022D_2

Product data sheet

Rev. 02 — 6 September 2009

13 of 16

PBLS2022D

NXP Semiconductors

20 V, 1.8 A PNP BISS loadswitch

11. Revision history

Table 9.

Revision history

Document ID

PBLS2022D_2

Modiﬁcations:

PBLS2022D_1

Release date

Data sheet status

Change notice

Supersedes

20090906

Product data sheet

PBLS2022D_1

• Table 7 “Characteristics”: I_CESconditions amended

20090625

Product data sheet

PBLS2022D_2

Product data sheet

Rev. 02 — 6 September 2009

14 of 16

PBLS2022D

NXP Semiconductors

20 V, 1.8 A PNP BISS loadswitch

12. Legal information

12.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Deﬁnition

Objective [short] data sheet

This document contains data from the objective speciﬁcation for product development.

This document contains data from the preliminary speciﬁcation.

This document contains the product speciﬁcation.

Preliminary [short] data sheet Qualiﬁcation

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Deﬁnitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

12.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

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or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

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may be subject to export control regulations. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

PBLS2022D_2

Product data sheet

Rev. 02 — 6 September 2009

15 of 16

PBLS2022D

NXP Semiconductors

20 V, 1.8 A PNP BISS loadswitch

14. Contents

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

Test information. . . . . . . . . . . . . . . . . . . . . . . . 12

Quality information . . . . . . . . . . . . . . . . . . . . . 12

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13

Packing information. . . . . . . . . . . . . . . . . . . . . 13

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14

8.1

Legal information. . . . . . . . . . . . . . . . . . . . . . . 15

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15

Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

12.1

12.2

12.3

12.4

Contact information. . . . . . . . . . . . . . . . . . . . . 15

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 6 September 2009

Document identifier: PBLS2022D_2

PBLS2022D [NEXPERIA]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E