PBLS4002Y-Q [NEXPERIA]

40 V PNP loadswitch transistorProduction;


型号：	PBLS4002Y-Q
厂家：	Nexperia
描述：	40 V PNP loadswitch transistorProduction
文件：	总12页 (文件大小：271K)
中文：	中文翻译
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PBLS4002Y-Q

40 V PNP loadswitch transistor

27 April 2022

Product data sheet

1. General description

PNP low V_CEsattransistor and NPN Resistor-Equipped Transistor (RET) in one very small SOT363

(SC-88) Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Low V_CEsattransistor and resistor-equipped transistor in one package

•

Low threshold voltage (<1 V) compared to MOSFET

Low drive power required

Space-saving solution

Reduction of component count

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Supply line switches

Battery charger switches

High-side switches for LEDs, drivers and backlights

Portable equipment

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1: PNP low V_CEsattransistor

V_CEO

collector-emitter

voltage

open base

-40

I_Clim

limiting collector current

-500

700

mΩ

R_CEsat

collector-emitter

saturation resistance

I_C= -500 mA; I_B= -50 mA;

T_amb= 25 °C; pulsed; t_p≤ 300 µs;

δ_factor≤ 0.02

440

TR2: NPN resistor-equipped transistor

V_CEO

collector-emitter

voltage

open base

I_O

output current

100

6.1

1.2

kΩ

bias resistor 1 (input)

bias resistor ratio

3.3

0.8

4.7

R2/R1

Nexperia

PBLS4002Y-Q

40 V PNP loadswitch transistor

5. Pinning information

Table 2. Pinning information

Symbol

GND1

Description

Simplified outline

Graphic symbol

C1 I2

GND2

GND (emitter) TR1

base TR1

output (collector) TR2

GND (emitter) TR2

input (base) TR2

collector TR1

GND2

TR2

TR1

TSSOP6 (SOT363)

E1 B1

sym036

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

PBLS4002Y-Q

TSSOP6

plastic, surface-mounted package; 6 leads; 0.65 mm pitch; SOT363

2.1 mm x 1.25 mm x 0.95 mm body

7. Marking

Table 4. Marking codes

Type number

Marking code[1]

S2%

PBLS4002Y-Q

[1] % = placeholder for manufacturing site code

PBLS4002Y-Q

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PBLS4002Y-Q

40 V PNP loadswitch transistor

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

TR1: PNP low V_CEsattransistor

V_CBO

V_CEO

V_EBO

I_Clim

I_CM

collector-base voltage

open emitter

-40

-6

collector-emitter voltage open base

emitter-base voltage

limiting collector current

peak collector current

base current

open collector

-500

-1

t_p≤ 1 ms; single pulse

I_B

-50

-100

200

I_BM

peak base current

total power dissipation

single pulse; t_p≤ 1 ms

T_amb≤ 25 °C

P_tot

[1]

TR2: NPN resistor-equipped transistor

V_CBO

V_CEO

V_EBO

V_I

collector-base voltage

open emitter

collector-emitter voltage open base

emitter-base voltage

input voltage

open collector

input voltage TR2 positive

input voltage TR2 negative

-10

100

200

I_O

output current

I_CM

peak collector current

total power dissipation

t_p≤ 1 ms; single pulse

T_amb≤ 25 °C

P_tot

[1]

Per device

P_tot

total power dissipation

junction temperature

ambient temperature

storage temperature

300

150

°C

T_j

T_amb

T_stg

-65

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Per device

R_th(j-a)

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from in free air

junction to ambient

[1]

416

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

PBLS4002Y-Q

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Product data sheet

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PBLS4002Y-Q

40 V PNP loadswitch transistor

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1: PNP low V_CEsattransistor

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

collector-base

breakdown voltage

I_C= -100 µA; I_E= 0 A; T_amb= 25 °C

I_C= -10 mA; I_B= 0 A; T_amb= 25 °C

I_C= 0 A; I_E= 100 µA; T_amb= 25 °C

-40

-6

collector-emitter

breakdown voltage

emitter-base

breakdown voltage

collector-base cut-off

current

V_CB= -40 V; I_E= 0 A; T_amb= 25 °C

V_CB= -40 V; I_E= 0 A; T_amb= 150 °C

V_EB= -5 V; I_C= 0 mA; T_amb= 25 °C

-100

-50

µA

I_EBO

h_FE

emitter-base cut-off

current

-100

DC current gain

V_CE= -2 V; I_C= -10 mA; pulsed;

T_amb= 25 °C

200

150

V_CE= -2 V; I_C= -100 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

V_CE= -2 V; I_C= -500 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

V_CEsat

collector-emitter

saturation voltage

I_C= -10 mA; I_B= -0.5 mA; T_amb= 25 °C

I_C= -100 mA; I_B= -5 mA; T_amb= 25 °C

I_C= -200 mA; I_B= -10 mA; T_amb= 25 °C

-50

-130

-200

-350

I_C= -500 mA; I_B= -50 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02 %; T_amb= 25 °C

R_CEsat

V_BEsat

V_BEon

C_c

collector-emitter

saturation resistance

I_C= -500 mA; I_B= -50 mA;

T_amb= 25 °C; pulsed; t_p≤ 300 µs;

δ_factor≤ 0.02

440

700

-1.2

-1.1

mΩ

base-emitter saturation

voltage

base-emitter turn-on

voltage

V_CE= -2 V; I_C= -100 mA; T_amb= 25 °C;

pulsed; t_p≤ 300 µs; δ_factor≤ 0.02

collector capacitance

V_CB= -10 V; I_E= 0 A; i_e= 0 A;

f = 1 MHz; T_amb= 25 °C

MHz

f_T

transition frequency

V_CE= -5 V; I_C= -100 mA; f = 100 MHz;

T_amb= 25 °C

100

300

TR2: NPN resistor-equipped transistor

V_(BR)CBO

V_(BR)CEO

I_CBO

collector-base

breakdown voltage

I_C= 100 µA; I_E= 0 A; T_amb= 25 °C

I_C= 10 mA; I_B= 0 A; T_amb= 25 °C

V_CB= 50 V; I_E= 0 A; T_amb= 25 °C

collector-emitter

breakdown voltage

collector-base cut-off

current

100

I_CEO

collector-emitter cut-off V_CE= 50 V; I_B= 0 A; T_amb= 25 °C

µA

current

V_CE= 50 V; I_B= 0 A; T_amb= 150 °C

900

I_EBO

emitter-base cut-off

current

V_EB= 5 V; I_C= 0 A; T_amb= 25 °C

h_FE

DC current gain

V_CE= 5 V; I_C= 10 mA; T_amb= 25 °C

I_C= 10 mA; I_B= 0.5 mA; T_amb= 25 °C

V_CEsat

collector-emitter

150

saturation voltage

PBLS4002Y-Q

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Product data sheet

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PBLS4002Y-Q

40 V PNP loadswitch transistor

Symbol

V_I(off)

V_I(on)

Parameter

Conditions

Min

Typ

1.1

1.9

4.7

Max

0.5

Unit

off-state input voltage V_CE= 5 V; I_C= 100 µA; T_amb= 25 °C

on-state input voltage V_CE= 0.3 V; I_C= 20 mA; T_amb= 25 °C

bias resistor 1 (input)

2.5

3.3

0.8

6.1

1.2

2.5

kΩ

R2/R1

C_c

bias resistor ratio

collector capacitance

V_CB= 10 V; I_E= 0 A; i_e= 0 A; f = 1 MHz;

T_amb= 25 °C

006aaa388

006aaa394

600

- 1

(mA) = - 30

- 27

(1)

(2)

(A)

- 24

- 21

- 18

- 0.8

- 15

- 12

- 9

400

200

- 0.6

- 0.4

- 0.2

- 6

- 3

(3)

- 1

- 10

- 1

- 2

- 3

- 4

- 5

- 1

- 10

(V)

(mA)

V_CE= −2 V

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig. 2. TR1 (PNP): Collector current as a function of

collector-emitter voltage; typical values

Fig. 1. TR1 (PNP): DC current gain as a function of

collector current; typical values

006aaa389

006aaa392

- 1.1

(V)

- 0.9

BEsat

(V)

- 0.9

- 0.7

- 0.5

- 0.3

- 0.1

(1)

(2)

(3)

(1)

(2)

(3)

- 0.7

- 0.5

- 0.3

- 0.1

- 1

- 10

- 1

- 10

- 1

- 10

- 1

- 10

(mA)

I (mA)

V_CE= −2 V

I_C/I_B= 20

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig. 3. TR1 (PNP): Base-emitter voltage as a function

of collector current; typical values

Fig. 4. TR1 (PNP): Base-emitter saturation voltage as a

function of collector current; typical values

PBLS4002Y-Q

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PBLS4002Y-Q

40 V PNP loadswitch transistor

006aaa390

006aaa391

- 1

CEsat

(V)

- 1

- 10

(1)

(2)

(1)

(2)

(3)

- 2

- 10

- 1

- 10

- 1

- 10

(mA)

- 10

- 1

- 10

I (mA)

I_C/I_B= 20

T_amb= 25 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig. 5. TR1 (PNP): Collector-emitter saturation voltage Fig. 6. TR1 (PNP): Collector-emitter saturation voltage

as a function of collector current; typical values

006aaa393

006aaa395

CEsat

(Ω)

CEsat

(Ω)

(1)

(2)

(3)

(1)

(2)

(3)

- 1

- 10

- 1

- 10

- 1

- 10

(mA)

I (mA)

I_C/I_B= 20

T_amb= 25 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig. 7. TR1 (PNP): Collector-emitter saturation

Fig. 8. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;

typical values

resistance as a function of collector current;

typical values

PBLS4002Y-Q

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PBLS4002Y-Q

40 V PNP loadswitch transistor

006aaa030

006aaa031

(1)

(2)

(3)

CEsat

(V)

(1)

(2)

(3)

- 1

- 2

- 1

(mA)

I (mA)

V_CE= 5 V

I_C/I_B= 20

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −40 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= -40 °C

Fig. 9. TR2 (NPN): DC current gain as a function of

collector current; typical values

Fig. 10. TR2 (NPN): Collector-emitter saturation voltage

as a function of collector current; typical values

006aaa032

006aaa033

I(on)

(V)

I(off)

(V)

(1)

(2)

(3)

- 1

- 2

- 1

(mA)

I (mA)

V_CE= 0.3 V

V_CE= 5 V

(1) T_amb= -40 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= -40 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig. 11. TR2 (NPN): On-state input voltage as a function Fig. 12. TR2 (NPN): Off-state input voltage as a function

of collector current; typical values

PBLS4002Y-Q

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PBLS4002Y-Q

40 V PNP loadswitch transistor

11. Test information

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

Resistor calculation

•

Calculation of bias resistor 1 (R1)

Calculation of bias resistor ratio (R2/R1)

n.c.

; I

i1 i2

GND

aaa-035020

Fig. 13. TR2 (NPN): Resistor test circuit

Resistor test conditions

Table 8. Resistor test conditions

R1 (kΩ) R2 (kΩ)

Test conditions

I_i1

I_i2

I_i3

Per transistor, for the PNP with negative polarity

4.7

750 μA

950 μA

850 μA

PBLS4002Y-Q

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PBLS4002Y-Q

40 V PNP loadswitch transistor

12. Package outline

2.2

1.8

1.1

0.8

0.45

0.15

2.2 1.35

2.0 1.15

pin 1

index

0.25

0.10

0.3

0.2

0.65

1.3

Dimensions in mm

14-10-03

Fig. 14. Package outline TSSOP6 (SOT363)

13. Soldering

2.65

solder lands

solder resist

0.4 (2×)

1.5

2.35

0.6

(4×)

0.5

(4×)

solder paste

0.5

(4×)

0.6

(2×)

occupied area

0.6

(4×)

Dimensions in mm

1.8

sot363_fr

Fig. 15. Reflow soldering footprint for TSSOP6 (SOT363)

1.5

solder lands

solder resist

occupied area

2.5

0.3

4.5

1.5

Dimensions in mm

preferred transport

direction during soldering

1.3

2.45

5.3

sot363_fw

Fig. 16. Wave soldering footprint for TSSOP6 (SOT363)

PBLS4002Y-Q

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Product data sheet

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PBLS4002Y-Q

40 V PNP loadswitch transistor

14. Revision history

Table 9. Revision history

Data sheet ID

Release date

Data sheet status

Change

notice

Supersedes

PBLS4002Y-Q v.1

20220427

Product data sheet

PBLS4002Y-Q

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PBLS4002Y-Q

40 V PNP loadswitch transistor

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product can reasonably be expected to result in personal injury, death or

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no liability for inclusion and/or use of Nexperia products in such equipment or

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15. Legal information

Data sheet status

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Document status Product

Definition

[1][2]

status [3]

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no representation

or warranty that such applications will be suitable for the specified use

without further testing or modification.

Objective [short]

data sheet

Development

This document contains data from

the objective specification for

product development.

Preliminary [short]

data sheet

Qualification

Production

This document contains data from

the preliminary specification.

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and products using Nexperia products, and Nexperia accepts no liability for

any assistance with applications or customer product design. It is customer’s

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Product [short]

data sheet

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

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given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

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PBLS4002Y-Q

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Product data sheet

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PBLS4002Y-Q

40 V PNP loadswitch transistor

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking..........................................................................2

8. Limiting values............................................................. 3

9. Thermal characteristics............................................... 3

10. Characteristics............................................................4

11. Test information..........................................................8

12. Package outline.......................................................... 9

13. Soldering..................................................................... 9

14. Revision history........................................................10

15. Legal information......................................................11

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 27 April 2022

PBLS4002Y-Q

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PBLS4002Y-Q [NEXPERIA]

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