PBLS4002Y [NEXPERIA]
40 V, 500 mA PNP loadswitch transistorProduction;型号: | PBLS4002Y |
厂家: | Nexperia |
描述: | 40 V, 500 mA PNP loadswitch transistorProduction 开关 光电二极管 晶体管 |
文件: | 总12页 (文件大小:1319K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PBLS4002Y
40 V, 500 mA PNP loadswitch transistor
1 January 2023
Product data sheet
1. General description
PNP low VCEsat transistor and NPN Resistor-Equipped Transistor (RET) in one very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
Low VCEsat transistor and resistor-equipped transistor in one package
•
•
•
•
Low threshold voltage (<1 V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count
3. Applications
•
•
•
•
Supply line switches
Battery charger switches
High-side switches for LEDs, drivers and backlights
Portable equipment
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
TR1: PNP low VCEsat transistor
VCEO
collector-emitter
voltage
open base
-
-
-40
V
IClim
limiting collector current
-
-
-
-500
700
mA
mΩ
RCEsat
collector-emitter
saturation resistance
IC = -500 mA; IB = -50 mA;
Tamb = 25 °C; pulsed; tp ≤ 300 µs;
δfactor ≤ 0.02
440
TR2: NPN resistor-equipped transistor
VCEO
collector-emitter
voltage
open base
-
-
50
V
IO
output current
-
-
100
6.1
1.2
mA
kΩ
R1
bias resistor 1 (input)
bias resistor ratio
3.3
0.8
4.7
1
R2/R1
Nexperia
PBLS4002Y
40 V, 500 mA PNP loadswitch transistor
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
GND1
B1
Description
Simplified outline
Graphic symbol
C1 I2
GND2
GND (emitter) TR1
base TR1
2
6
5
4
3
3
O2
output (collector) TR2
GND (emitter) TR2
input (base) TR2
collector TR1
R1
R2
4
GND2
I2
TR2
O2
TR1
5
1
2
6
C1
TSSOP6 (SOT363)
E1 B1
sym036
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PBLS4002Y
TSSOP6
plastic, surface-mounted package; 6 leads; 0.65 mm pitch; SOT363
2.1 mm x 1.25 mm x 0.95 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code[1]
S2%
PBLS4002Y
[1] % = placeholder for manufacturing site code
©
PBLS4002Y
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
1 January 2023
2 / 12
Nexperia
PBLS4002Y
40 V, 500 mA PNP loadswitch transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
TR1: PNP low VCEsat transistor
VCBO
VCEO
VEBO
IClim
ICM
collector-base voltage
open emitter
-
-
-
-
-
-
-
-
-40
-40
-6
V
collector-emitter voltage open base
V
emitter-base voltage
limiting collector current
peak collector current
base current
open collector
V
-500
-1
mA
mA
mA
mA
mW
tp ≤ 1 ms; single pulse
IB
-50
-100
200
IBM
peak base current
total power dissipation
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
Ptot
[1]
TR2: NPN resistor-equipped transistor
VCBO
VCEO
VEBO
VI
collector-base voltage
open emitter
-
-
-
-
-
-
-
-
50
V
collector-emitter voltage open base
50
V
emitter-base voltage
input voltage
open collector
10
V
input voltage TR2 positive
input voltage TR2 negative
30
V
-10
100
100
200
V
IO
output current
mA
mA
mW
ICM
peak collector current
total power dissipation
tp ≤ 1 ms; single pulse
Tamb ≤ 25 °C
Ptot
[1]
Per device
Ptot
total power dissipation
junction temperature
ambient temperature
storage temperature
-
300
150
150
150
mW
°C
Tj
-
Tamb
Tstg
-65
-65
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Per device
Rth(j-a)
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from in free air
junction to ambient
[1]
-
-
416
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
©
PBLS4002Y
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
1 January 2023
3 / 12
Nexperia
PBLS4002Y
40 V, 500 mA PNP loadswitch transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
TR1: PNP low VCEsat transistor
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
collector-base
breakdown voltage
IC = -100 µA; IE = 0 A; Tamb = 25 °C
IC = -10 mA; IB = 0 A; Tamb = 25 °C
IC = 0 A; IE = 100 µA; Tamb = 25 °C
-40
-40
-6
-
-
-
-
-
-
V
V
V
collector-emitter
breakdown voltage
emitter-base
breakdown voltage
collector-base cut-off
current
VCB = -40 V; IE = 0 A; Tamb = 25 °C
VCB = -40 V; IE = 0 A; Tamb = 150 °C
VEB = -5 V; IC = 0 mA; Tamb = 25 °C
-
-
-
-
-
-
-100
-50
nA
µA
nA
IEBO
hFE
emitter-base cut-off
current
-100
DC current gain
VCE = -2 V; IC = -10 mA; pulsed;
Tamb = 25 °C
200
150
40
-
-
-
-
-
-
VCE = -2 V; IC = -100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = -2 V; IC = -500 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
VCEsat
collector-emitter
saturation voltage
IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C
IC = -100 mA; IB = -5 mA; Tamb = 25 °C
IC = -200 mA; IB = -10 mA; Tamb = 25 °C
-
-
-
-
-
-
-
-
-50
mV
mV
mV
mV
-130
-200
-350
IC = -500 mA; IB = -50 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02 %; Tamb = 25 °C
RCEsat
VBEsat
VBEon
Cc
collector-emitter
saturation resistance
IC = -500 mA; IB = -50 mA;
Tamb = 25 °C; pulsed; tp ≤ 300 µs;
δfactor ≤ 0.02
-
440
700
-1.2
-1.1
10
mΩ
V
base-emitter saturation
voltage
-
-
base-emitter turn-on
voltage
VCE = -2 V; IC = -100 mA; Tamb = 25 °C;
pulsed; tp ≤ 300 µs; δfactor ≤ 0.02
-
-
V
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
-
pF
MHz
fT
transition frequency
VCE = -5 V; IC = -100 mA; f = 100 MHz;
Tamb = 25 °C
100
300
-
TR2: NPN resistor-equipped transistor
V(BR)CBO
V(BR)CEO
ICBO
collector-base
breakdown voltage
IC = 100 µA; IE = 0 A; Tamb = 25 °C
IC = 10 mA; IB = 0 A; Tamb = 25 °C
VCB = 50 V; IE = 0 A; Tamb = 25 °C
50
50
-
-
-
-
-
V
collector-emitter
breakdown voltage
-
V
collector-base cut-off
current
100
nA
ICEO
collector-emitter cut-off VCE = 50 V; IB = 0 A; Tamb = 25 °C
-
-
-
-
-
-
1
µA
µA
µA
current
VCE = 50 V; IB = 0 A; Tamb = 150 °C
50
900
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A; Tamb = 25 °C
hFE
DC current gain
VCE = 5 V; IC = 10 mA; Tamb = 25 °C
IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C
30
-
-
-
-
VCEsat
collector-emitter
150
mV
saturation voltage
©
PBLS4002Y
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
1 January 2023
4 / 12
Nexperia
PBLS4002Y
40 V, 500 mA PNP loadswitch transistor
Symbol
VI(off)
VI(on)
R1
Parameter
Conditions
Min
-
Typ
1.1
1.9
4.7
1
Max
0.5
-
Unit
V
off-state input voltage VCE = 5 V; IC = 100 µA; Tamb = 25 °C
on-state input voltage VCE = 0.3 V; IC = 20 mA; Tamb = 25 °C
bias resistor 1 (input)
2.5
3.3
0.8
-
V
6.1
1.2
2.5
kΩ
R2/R1
Cc
bias resistor ratio
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C
-
pF
006aaa388
006aaa394
600
- 1
I
(mA) = - 30
- 27
B
I
C
(1)
(2)
(A)
h
- 24
- 21
- 18
FE
- 0.8
- 15
- 12
- 9
400
200
0
- 0.6
- 0.4
- 0.2
0
- 6
- 3
(3)
- 1
2
3
0
- 1
- 2
- 3
- 4
- 5
- 10
- 1
- 10
- 10
- 10
V
(V)
I
(mA)
CE
C
VCE = −2 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 2. TR1 (PNP): Collector current as a function of
collector-emitter voltage; typical values
Fig. 1. TR1 (PNP): DC current gain as a function of
collector current; typical values
006aaa389
006aaa392
- 1.1
- 1.1
V
V
BE
BEsat
(V)
(V)
- 0.9
- 0.9
- 0.7
- 0.5
- 0.3
- 0.1
(1)
(2)
(3)
(1)
(2)
(3)
- 0.7
- 0.5
- 0.3
- 0.1
- 1
2
3
- 1
2
3
- 10
- 1
- 10
- 10
- 10
- 10
- 1
- 10
- 10
- 10
I
(mA)
I (mA)
C
C
VCE = −2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 3. TR1 (PNP): Base-emitter voltage as a function
of collector current; typical values
Fig. 4. TR1 (PNP): Base-emitter saturation voltage as a
function of collector current; typical values
©
PBLS4002Y
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
1 January 2023
5 / 12
Nexperia
PBLS4002Y
40 V, 500 mA PNP loadswitch transistor
006aaa390
006aaa391
- 1
- 1
V
V
CEsat
CEsat
(V)
(V)
- 1
- 1
- 10
- 10
(1)
(2)
(1)
(2)
(3)
(3)
- 2
- 2
- 10
- 10
- 1
2
3
- 1
2
3
- 10
- 1
- 10
- 10
- 10
(mA)
- 10
- 1
- 10
- 10
- 10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 5. TR1 (PNP): Collector-emitter saturation voltage Fig. 6. TR1 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
as a function of collector current; typical values
006aaa393
006aaa395
3
3
10
10
R
CEsat
(Ω)
R
CEsat
(Ω)
2
2
10
10
10
10
(1)
(2)
(3)
(1)
(2)
(3)
1
1
- 1
- 1
10
10
- 1
2
3
- 1
2
3
- 10
- 1
- 10
- 10
- 10
- 10
- 1
- 10
- 10
- 10
I
(mA)
I (mA)
C
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb= 25 °C
(3) Tamb = −55 °C
Fig. 7. TR1 (PNP): Collector-emitter saturation
Fig. 8. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
resistance as a function of collector current;
typical values
©
PBLS4002Y
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Nexperia B.V. 2023. All rights reserved
Product data sheet
1 January 2023
6 / 12
Nexperia
PBLS4002Y
40 V, 500 mA PNP loadswitch transistor
006aaa030
006aaa031
3
10
1
h
FE
(1)
(2)
(3)
V
CEsat
(V)
2
10
(1)
(2)
(3)
- 1
10
10
- 2
1
10
10
- 1
2
2
1
10
10
1
10
10
I
(mA)
I (mA)
C
C
VCE = 5 V
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
Fig. 9. TR2 (NPN): DC current gain as a function of
collector current; typical values
Fig. 10. TR2 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values
006aaa032
006aaa033
10
10
V
V
I(off)
I(on)
(V)
(V)
(1)
(1)
(2)
(2)
(3)
1
1
(3)
- 1
- 1
10
10
- 1
2
- 2
- 1
10
1
10
10
10
10
1
10
I
(mA)
I (mA)
C
C
VCE = 0.3 V
VCE = 5 V
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = -40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 11. TR2 (NPN): On-state input voltage as a function Fig. 12. TR2 (NPN): Off-state input voltage as a function
of collector current; typical values
of collector current; typical values
©
PBLS4002Y
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Nexperia B.V. 2023. All rights reserved
Product data sheet
1 January 2023
7 / 12
Nexperia
PBLS4002Y
40 V, 500 mA PNP loadswitch transistor
11. Test information
Resistor calculation
•
Calculation of bias resistor 1 (R1)
•
Calculation of bias resistor ratio (R2/R1)
n.c.
I ; I
1
2
R1
I
3
R2
GND
aaa-035604
Fig. 13. TR2 (NPN): Resistor test circuit
Resistor test conditions
Table 8. Resistor test conditions
Type number R1 (kΩ)
R2 (kΩ)
Test conditions
I1
I2
I3
Per transistor, for the PNP with negative polarity
PBLS4002Y 4.7 4.7
750 μA
950 μA
850 μA
12. Package outline
2.2
1.8
1.1
0.8
0.45
0.15
6
5
4
2.2 1.35
2.0 1.15
pin 1
index
1
2
3
0.25
0.10
0.3
0.2
0.65
1.3
Dimensions in mm
14-10-03
Fig. 14. Package outline TSSOP6 (SOT363)
©
PBLS4002Y
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Nexperia B.V. 2023. All rights reserved
Product data sheet
1 January 2023
8 / 12
Nexperia
PBLS4002Y
40 V, 500 mA PNP loadswitch transistor
13. Soldering
2.65
solder lands
solder resist
0.4 (2×)
1.5
2.35
0.6
(4×)
0.5
(4×)
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig. 15. Reflow soldering footprint for TSSOP6 (SOT363)
1.5
solder lands
solder resist
2.5
0.3
4.5
occupied area
1.5
Dimensions in mm
preferred transport
direction during soldering
1.3
1.3
2.45
5.3
sot363_fw
Fig. 16. Wave soldering footprint for TSSOP6 (SOT363)
©
PBLS4002Y
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
1 January 2023
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Nexperia
PBLS4002Y
40 V, 500 mA PNP loadswitch transistor
14. Revision history
Table 9. Revision history
Data sheet ID
Release date
Data sheet status
Change
notice
Supersedes
PBLS4002Y v.5
Modifications:
20230101
Product data sheet
-
PBLS4002Y v.4
•
Product changed to non-automotive qualification. Please refer to nexperia.com for
automotive (-Q) product alternative(s).
PBLS4002Y v.4
20220427
20090212
20050719
20041206
Product data sheet
Product data sheet
Product data sheet
Product data sheet
-
-
-
-
PBLS4002Y_PBLS4002V_3
PBLS4002Y_PBLS4002V_2
PBLS4002Y_PBLS4002V_1
-
PBLS4002Y_PBLS4002V_3
PBLS4002Y_PBLS4002V_2
PBLS4002Y_PBLS4002V_1
©
PBLS4002Y
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Nexperia B.V. 2023. All rights reserved
Product data sheet
1 January 2023
10 / 12
Nexperia
PBLS4002Y
40 V, 500 mA PNP loadswitch transistor
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
15. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
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[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
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Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
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products in automotive equipment or applications.
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or replacement of any products or rework charges) whether or not such
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In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s own risk,
and (c) customer fully indemnifies Nexperia for any liability, damages or failed
product claims resulting from customer design and use of the product for
automotive applications beyond Nexperia’s standard warranty and Nexperia’s
product specifications.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
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Trademarks
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
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©
PBLS4002Y
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
1 January 2023
11 / 12
Nexperia
PBLS4002Y
40 V, 500 mA PNP loadswitch transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 3
10. Characteristics............................................................4
11. Test information..........................................................8
12. Package outline.......................................................... 8
13. Soldering..................................................................... 9
14. Revision history........................................................10
15. Legal information......................................................11
© Nexperia B.V. 2023. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 1 January 2023
©
PBLS4002Y
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
1 January 2023
12 / 12
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