PBLS6002D [NEXPERIA]

60 V PNP BISS loadswitchProduction;


型号：	PBLS6002D
厂家：	Nexperia
描述：	60 V PNP BISS loadswitchProduction 开关光电二极管晶体管
文件：	总17页 (文件大小：255K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

application markets

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

the references to Nexperia, as shown below.

Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,

use http://www.nexperia.com

Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use

salesaddresses@nexperia.com (email)

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

the version, as shown below:

reserved

Should be replaced with:

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail

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Kind regards,

Team Nexperia

PBLS6002D

60 V PNP BISS loadswitch

Rev. 02 — 7 September 2009

Product data sheet

1. Product proﬁle

1.1 General description

PNP low V_CEsatBreakthrough In Small Signal (BISS) transistor and

NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted

Device (SMD) plastic package.

1.2 Features

I Low V_CEsat(BISS) transistor and resistor-equipped transistor in one package

I Low threshold voltage (< 1 V) compared to MOSFET

I Low drive power required

I Space-saving solution

I Reduction of component count

1.3 Applications

I Supply line switches

I Battery charger switches

I High-side switches for LEDs, drivers and backlights

I Portable equipment

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

TR1; PNP low V_CEsattransistor

V_CEO

I_C

collector-emitter voltage

collector current (DC)

open base

−60

−1

[1]

[2]

R_CEsat

collector-emitter saturation I_C= −1 A;

resistance I_B= −100 mA

255

340

mΩ

TR2; NPN resistor-equipped transistor

V_CEO

I_O

collector-emitter voltage

output current (DC)

bias resistor 1 (input)

bias resistor ratio

open base

100

6.1

1.2

kΩ

3.3

0.8

4.7

R2/R1

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.

[2] Pulse test: t_p≤ 300 µs; δ ≤ 0.02

PBLS6002D

NXP Semiconductors

60 V PNP BISS loadswitch

2. Pinning information

Table 2.

Pinning

Description

Simpliﬁed outline

Symbol

emitter TR1

base TR1

output (collector) TR2

GND (emitter) TR2

input (base) TR2

collector TR1

TR2

TR1

sym036

3. Ordering information

Table 3.

Ordering information

Type number Package

Name

Description

Version

PBLS6002D

SC-74

plastic surface mounted package; 6 leads

SOT457

4. Marking

Table 4.

Marking codes

Type number

Marking code

PBLS6002D

PBLS6002D_2

Product data sheet

Rev. 02 — 7 September 2009

2 of 16

PBLS6002D

NXP Semiconductors

60 V PNP BISS loadswitch

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

TR1; PNP low V_CEsattransistor

V_CBO

V_CEO

V_EBO

I_C

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

open emitter

open base

−80

−60

−5

open collector

[1]

[2]

[3]

−700

−850

−1

I_CM

peak collector current

single pulse;

−2

t_p≤ 1 ms

I_B

base current (DC)

peak base current

−300

−1

I_BM

single pulse;

t_p≤ 1 ms

[1]

[2]

[3]

P_tot

total power dissipation

T_amb≤ 25 °C

250

350

400

TR2; NPN resistor-equipped transistor

V_CBO

V_CEO

V_EBO

V_I

collector-base voltage

collector-emitter voltage

emitter-base voltage

input voltage

open emitter

open base

open collector

positive

+30

−10

100

200

negative

I_O

output current (DC)

peak collector current

total power dissipation

I_CM

P_tot

[1]

[2]

[3]

T_amb≤ 25 °C

Per device

[1]

[2]

[3]

P_tot

total power dissipation

T_amb≤ 25 °C

400

°C

530

600

T_stg

T_j

storage temperature

junction temperature

ambient temperature

−65

+150

150

°C

T_amb

−65

+150

°C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm².

[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.

PBLS6002D_2

Product data sheet

Rev. 02 — 7 September 2009

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PBLS6002D

NXP Semiconductors

60 V PNP BISS loadswitch

006aaa461

0.8

tot

(W)

(1)

(2)

0.6

(3)

0.4

0.2

120

160

(°C)

amb

(1) Ceramic PCB, Al₂O₃, standard footprint

(2) FR4 PCB, mounting pad for collector 1cm²

(3) FR4 PCB, standard footprint

Fig 1. Power derating curves

6. Thermal characteristics

Table 6.

Thermal characteristics

Parameter

Symbol

Per device

R_th(j-a)

Conditions

Min

Typ

Max

Unit

[1]

[2]

[3]

thermal resistance from in free air

junction to ambient

312

236

208

K/W

TR1; PNP low V_CEsattransistor

R_th(j-sp)

thermal resistance from

junction to solder point

105

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm².

[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.

PBLS6002D_2

Product data sheet

Rev. 02 — 7 September 2009

4 of 16

PBLS6002D

NXP Semiconductors

60 V PNP BISS loadswitch

006aaa462

δ = 1

th(j-a)

0.75

0.5

0.33

0.2

(K/W)

0.1

0.05

0.02

0.01

−1

−5

−4

−3

−2

−1

(s)

FR4 PCB, standard footprint

Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time;

typical values

006aaa463

th(j-a)

δ = 1

0.75

(K/W)

0.5

0.33

0.2

0.1

0.05

0.02

0.01

−5

−4

−3

−2

−1

(s)

FR4 PCB, mounting pad for collector 1cm²

Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time;

typical values

PBLS6002D_2

Product data sheet

Rev. 02 — 7 September 2009

5 of 16

PBLS6002D

NXP Semiconductors

60 V PNP BISS loadswitch

006aaa464

th(j-a)

δ = 1

0.75

(K/W)

0.5

0.33

0.2

0.1

0.05

0.02

0.01

−5

−4

−3

−2

−1

(s)

Ceramic PCB, Al₂O₃, standard footprint

Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time;

typical values

7. Characteristics

Table 7.

Characteristics

T_amb= 25 °C unless otherwise speciﬁed

Symbol Parameter

Conditions

Min

Typ

Max Unit

TR1; PNP low V_CEsattransistor

I_CBO

collector-base cut-off

current

V_CB= −60 V; I_E= 0 A

−100 nA

V_CB= −60 V; I_E= 0 A;

T_j= 150 °C

−50

µA

I_CES

collector-emitter cut-off

current

V_CE= −60 V; V_BE= 0 V

−100 nA

I_EBO

h_FE

emitter-base cut-off current V_EB= −5 V; I_C= 0 A

−100 nA

DC current gain

V_CE= −5 V; I_C= −1 mA

200

150

350

230

[1]

V_CE= −5 V;

I_C= −500 mA

V_CE= −5 V;

100

160

I_C= −1000 mA

V_CEsat

collector-emitter saturation I_C= −100 mA;

−110 −175 mV

−135 −180 mV

−255 −340 mV

voltage

I_B= −1 mA

[1]

I_C= −500 mA;

I_B= −50 mA

I_C= −1000 mA;

I_B= −100 mA

R_CEsat

V_BEsat

collector-emitter saturation I_C= −1 A;

255

340

mΩ

resistance

I_B= −100 mA

base-emitter saturation

voltage

I_C= −1 A; I_B= −50 mA

−0.95 −1.1

PBLS6002D_2

Product data sheet

Rev. 02 — 7 September 2009

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PBLS6002D

NXP Semiconductors

60 V PNP BISS loadswitch

Table 7.

Characteristics …continued

T_amb= 25 °C unless otherwise speciﬁed

Symbol Parameter

Conditions

Min

Typ

Max Unit

[1]

V_BEon

base-emitter turn-on

voltage

V_CE= −5 V; I_C= −1 A

−0.82 −0.9

t_d

t_r

delay time

I_C= −0.5 A;

I_Bon= −25 mA;

rise time

I_Boff= 25 mA

t_on

t_s

turn-on time

storage time

fall time

205

t_f

t_off

f_T

turn-off time

transition frequency

260

185

I_C= −50 mA;

_CE=−10 V;

150

MHz

f = 100 MHz

C_c

collector capacitance

V_CB= −10 V;

I_E= i_e= 0 A; f = 1 MHz

TR2; NPN resistor-equipped transistor

I_CBO

collector-base cut-off

current

V_CB= 50 V; I_E= 0 A

100

I_CEO

collector-emitter cut-off

current

V_CE= 30 V; I_B= 0 A

µA

V_CE= 30 V; I_B= 0 A;

T_j= 150 °C

I_EBO

h_FE

emitter-base cut-off current V_EB= 5 V; I_C= 0 A

DC current gain V_CE= 5 V; I_C= 20 mA

collector-emitter saturation I_C= 10 mA;

900

µA

V_CEsat

150

voltage

I_B= 0.5 mA

V_I(off)

V_I(on)

off-state input voltage

on-state input voltage

V_CE= 5 V; I_C= 100 µA

1.1

1.9

0.5

V_CE= 0.3 V;

I_C= 20 mA

2.5

bias resistor 1 (input)

bias resistor ratio

3.3

0.8

4.7

6.1

1.2

2.5

kΩ

R2/R1

C_c

collector capacitance

V_CB= 10 V;

I_E= i_e= 0 A; f = 1 MHz

[1] Pulse test: t_p≤ 300 µs; δ ≤ 0.02

PBLS6002D_2

Product data sheet

Rev. 02 — 7 September 2009

7 of 16

PBLS6002D

NXP Semiconductors

60 V PNP BISS loadswitch

006aaa474

006aaa475

600

−1

(1)

CEsat

(V)

400

(2)

(3)

−1

−10

(1)

(2)

(3)

200

−2

−10

−1

−10

(mA)

−10

−1

−10

I (mA)

V_CE= −5 V

I_C/I_B= 20

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig 5. TR1 (PNP): DC current gain as a function of

collector current; typical values

Fig 6. TR1 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

006aaa476

006aaa477

−1.0

−1.1

BEsat

(V)

−0.9

−0.7

−0.5

−0.3

−0.1

−0.8

(1)

(2)

(1)

(2)

(3)

−0.6

−0.4

−0.2

(3)

−1

−10

−1

−10

(mA)

−10

−1

−10

I (mA)

V_CE= −5 V

I_C/I_B= 20

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig 7. TR1 (PNP): Base-emitter voltage as a function

of collector current; typical values

Fig 8. TR1 (PNP): Base-emitter saturation voltage as

a function of collector current; typical values

PBLS6002D_2

Product data sheet

Rev. 02 — 7 September 2009

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PBLS6002D

NXP Semiconductors

60 V PNP BISS loadswitch

006aaa478

006aaa479

−2.0

(mA) = −35.0

−31.5

CEsat

(A)

−28.0

(Ω)

−24.5

−21.0

−1.6

−17.5

−14.0

−10.5

−7.0

−1.2

−0.8

−0.4

0.0

(1)

(2)

(3)

−3.5

−1

−2

−3

−4

−5

(V)

−10

−1

−10

I (mA)

T_amb= 25 °C

I_C/I_B= 20

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig 9. TR1 (PNP): Collector current as a function of

collector-emitter voltage; typical values

Fig 10. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;

typical values

006aaa480

006aaa481

−1

CEsat

(Ω)

CEsat

(V)

(1)

(2)

(3)

−1

−10

(1)

(2)

(3)

−2

−1

−10

−1

−10

−1

−10

(mA)

−10

−1

−10

I (mA)

T_amb= 25 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

Fig 11. TR1 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

Fig 12. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;

typical values

PBLS6002D_2

Product data sheet

Rev. 02 — 7 September 2009

9 of 16

PBLS6002D

NXP Semiconductors

60 V PNP BISS loadswitch

006aaa030

006aaa031

(1)

(2)

(3)

CEsat

(V)

(1)

(2)

(3)

−1

−2

−1

(mA)

I (mA)

V_CE= 5 V

I_C/I_B= 20

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −40 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −40 °C

Fig 13. TR2 (NPN): DC current gain as a function of

collector current; typical values

Fig 14. TR2 (NPN): Collector-emitter saturation

voltage as a function of collector current;

typical values

006aaa032

006aaa033

I(on)

I(off)

(V)

(1)

(2)

(3)

−1

−2

−1

(mA)

I (mA)

V_CE= 0.3 V

V_CE= 5 V

(1) T_amb= −40 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= −40 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig 15. TR2 (NPN): On-state input voltage as a

function of collector current; typical values

Fig 16. TR2 (NPN): Off-state input voltage as a

function of collector current; typical values

PBLS6002D_2

Product data sheet

Rev. 02 — 7 September 2009

10 of 16

PBLS6002D

NXP Semiconductors

60 V PNP BISS loadswitch

8. Test information

−

input pulse

90 %

(idealized waveform)

−

(100 %)

Bon

10 %

−

Boff

output pulse

−

(idealized waveform)

90 %

−

(100 %)

10 %

006aaa266

off

Fig 17. BISS transistor switching time deﬁnition

(probe)

oscilloscope

450 Ω

DUT

mgd624

I_C= −0.5 A; I_Bon= −25 mA; I_Boff= 25 mA; R1 = open; R2 = 100 Ω; R_B= 300 Ω; R_C= 20 Ω

Fig 18. Test circuit for switching times

PBLS6002D_2

Product data sheet

Rev. 02 — 7 September 2009

11 of 16

PBLS6002D

NXP Semiconductors

60 V PNP BISS loadswitch

9. Package outline

3.1

2.7

1.1

0.9

0.6

0.2

3.0 1.7

2.5 1.3

pin 1 index

0.26

0.10

0.40

0.25

0.95

1.9

Dimensions in mm

04-11-08

Fig 19. Package outline SOT457 (SC-74)

10. Packing information

Table 8.

Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.^[1]

Type number

Package

Description

Packing quantity

3000

-115

-125

10000

-135

[2]

[3]

PBLS6002D

SOT457

4 mm pitch, 8 mm tape and reel; T1

4 mm pitch, 8 mm tape and reel; T2

-165

[1] For further information and the availability of packing methods, see Section 14.

[2] T1: normal taping

[3] T2: reverse taping

PBLS6002D_2

Product data sheet

Rev. 02 — 7 September 2009

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PBLS6002D

NXP Semiconductors

60 V PNP BISS loadswitch

11. Soldering

3.45

1.95

solder lands

solder resist

occupied area

solder paste

0.95

0.45 0.55

2.825

3.30

1.60

1.70

3.10

3.20

msc422

Dimensions in mm

Fig 20. Reﬂow soldering footprint

5.30

solder lands

solder resist

occupied area

5.05

0.45 1.45 4.45

msc423

1.40

4.30

Dimensions in mm

Fig 21. Wave soldering footprint

PBLS6002D_2

Product data sheet

Rev. 02 — 7 September 2009

13 of 16

PBLS6002D

NXP Semiconductors

60 V PNP BISS loadswitch

12. Revision history

Table 9.

Revision history

Document ID

PBLS6002D_2

Modiﬁcations:

Release date

Data sheet status

Change notice

Supersedes

20090907

Product data sheet

PBLS6002D_1

• This data sheet was changed to reﬂect the new company name NXP Semiconductors,

including new legal deﬁnitions and disclaimers. No changes were made to the technical

content.

• Figure 6 “TR1 (PNP): Collector-emitter saturation voltage as a function of collector current;

typical values”: V_CEsatunit amended from mV to V

• Figure 20 “Reﬂow soldering footprint”: updated

• Figure 21 “Wave soldering footprint”: updated

PBLS6002D_1

20050623

Product data sheet

PBLS6002D_2

Product data sheet

Rev. 02 — 7 September 2009

14 of 16

PBLS6002D

NXP Semiconductors

60 V PNP BISS loadswitch

13. Legal information

13.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Deﬁnition

Objective [short] data sheet

This document contains data from the objective speciﬁcation for product development.

This document contains data from the preliminary speciﬁcation.

This document contains the product speciﬁcation.

Preliminary [short] data sheet Qualiﬁcation

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Deﬁnitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

13.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

PBLS6002D_2

Product data sheet

Rev. 02 — 7 September 2009

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PBLS6002D

NXP Semiconductors

60 V PNP BISS loadswitch

15. Contents

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

Test information. . . . . . . . . . . . . . . . . . . . . . . . 11

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12

Packing information. . . . . . . . . . . . . . . . . . . . . 12

Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14

Legal information. . . . . . . . . . . . . . . . . . . . . . . 15

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15

Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13.1

13.2

13.3

13.4

Contact information. . . . . . . . . . . . . . . . . . . . . 15

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 7 September 2009

Document identifier: PBLS6002D_2

PBLS6002D [NEXPERIA]

相关型号：

PBLS6003D

PBLS6003D

PBLS6003D/T1

PBLS6003D/T2

PBLS6004D

PBLS6004D

PBLS6004D,115

PBLS6004D/T1

PBLS6004D/T2

PBLS6005D

PBLS6005D

PBLS6005D,115