PBRP113ET-Q [NEXPERIA]

40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩProduction;


型号：	PBRP113ET-Q
厂家：	Nexperia
描述：	40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩProduction
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PBRP113ET-Q

40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ

6 May 2021

Product data sheet

1. General description

PNP low V_CEsatPerformance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBRN113ET-Q

2. Features and benefits

•

600 mA output current capability

•

Low collector-emitter saturation voltage V_CEsat

High current gain h_FE

Reduces component count

Built-in bias resistors

Reduces pick and place costs

Simplifies circuit design

± 10 % resistor ratio tolerance

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Digital application in automotive and industrial segments

Switching loads

Medium current peripheral driver

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-40

I_O

output current

bias resistor 1

bias resistor ratio

[1]

[2]

-600

1.3

kΩ

0.7

0.9

R2/R1

1.1

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 μm copper, tin-plated and standard footprint.

[2] See section "Test information" for resistor calculation and test conditions

Nexperia

PBRP113ET-Q

40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ

5. Pinning information

Table 2. Pinning information

Symbol

Description

Simplified outline

Graphic symbol

input (base)

GND

ground (emitter)

output (collector)

GND

aaa-019606

SOT23

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

PBRP113ET-Q

SOT23

plastic, surface-mounted package; 3 terminals; 1.9 mm

pitch; 2.9 mm x 1.3 mm x 1 mm body

SOT23

7. Marking

Table 4. Marking codes

Type number

Marking code[1]

%7K

PBRP113ET-Q

[1] % = placeholder for manufacturing site code

PBRP113ET-Q

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Product data sheet

6 May 2021

2 / 13

Nexperia

PBRP113ET-Q

40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_CBO

V_CEO

V_EBO

V_I

Parameter

Conditions

Min

Max

-40

Unit

collector-base voltage

open emitter

collector-emitter voltage open base

-40

emitter-base voltage

input voltage

open collector

positive

-10

negative

-10

I_O

output current

[1]

-600

-800

I_ORM

repetitive peak output

current

t_p≤ 1 ms; δ ≤ 0.33

T_amb≤ 25 °C

P_tot

total power dissipation

[1]

[2]

250

370

150

°C

T_j

junction temperature

ambient temperature

storage temperature

T_amb

T_stg

-55

-65

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 μm copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided, 35 µm copper, tin-plated, mounting pad for collector 1 cm².

aaa-033051

400

(1)

tot

(mW)

300

(2)

200

100

-75

-25

125

175

(°C)

amb

(1) FR4 PCB, single-sided, 35 µm copper, tin-plated, mounting pad for collector 1 cm²

(2) FR4 PCB, single-sided, 35 µm copper, tin-plated and standard footprint

Fig. 1. Power derating curve

PBRP113ET-Q

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Product data sheet

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Nexperia

PBRP113ET-Q

40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

500

338

105

Unit

K/W

R_th(j-a)

thermal resistance from in free air

junction to ambient

[1]

[2]

R_th(j-sp)

thermal resistance from

junction to solder point

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 μm copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided, 35 μm copper, tin-plated, mounting pad for collector 1 cm².

006aab000

δ = 1

0.50

th(j-a)

0.75

0.33

(K/W)

0.20

0.10

0.05

0.02

0.01

- 1

- 5

- 4

- 3

- 2

- 1

(s)

FR4 PCB, single-sided, 35 µm copper, tin-plated and standard footprint.

Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aab001

th(j-a)

δ = 1

0.50

(K/W)

0.75

0.33

0.20

0.10

0.05

0.02

0.01

- 1

- 5

- 4

- 3

- 2

- 1

(s)

FR4 PCB, single-sided, 35 µm copper, tin-plated, mounting pad for collector 1 cm².

Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PBRP113ET-Q

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Product data sheet

6 May 2021

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Nexperia

PBRP113ET-Q

40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_(BR)CBO

collector-base

I_C= -100 µA; I_E= 0 A; T_amb= 25 °C

-40

breakdown voltage

V_(BR)CEO

I_CBO

collector-emitter

breakdown voltage

I_C= -10 mA; I_B= 0 A; T_amb= 25 °C

V_CB= -30 V; I_E= 0 A; T_amb= 25 °C

-40

collector-base cut-off

current

-100

-0.5

-4

µA

I_CEO

collector-emitter cut-off V_CE= -30 V; I_B= 0 A; T_amb= 25 °C

current

I_EBO

emitter-base cut-off

current

V_EB= -5 V; I_C= 0 A; T_amb= 25 °C

h_FE

DC current gain

V_CE= -5 V; I_C= -50 mA; T_amb= 25 °C

V_CE= -5 V; I_C= -300 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

130

190

V_CE= -5 V; I_C= -600 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

140

210

V_CEsat

collector-emitter

saturation voltage

I_C= -50 mA; I_B= -2.5 mA; T_amb= 25 °C

-35

-70

-45

I_C= -200 mA; I_B= -10 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

-100

I_C= -500 mA; I_B= -10 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

-200

-450

-300

-750

I_C= -600 mA; I_B= -6 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

V_I(off)

V_I(on)

off-state input voltage V_CE= -5 V; I_C= -100 µA; T_amb= 25 °C

on-state input voltage V_CE= -0.3 V; I_C= -20 mA; T_amb= 25 °C

bias resistor 1

-0.6

-1

-1.3

-1.5

-1.8

1.3

1.1

[1]

0.7

0.9

kΩ

R2/R1

C_c

bias resistor ratio

collector capacitance

V_CB= -10 V; I_E= 0 A; i_e= 0 A;

f = 1 MHz; T_amb= 25 °C

[1] See section "Test information" for resistor calculation and test conditions

PBRP113ET-Q

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Product data sheet

6 May 2021

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Nexperia

PBRP113ET-Q

40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ

006aab073

006aab074

- 1

- 10

(1)

(2)

(3)

CEsat

(V)

(1)

(2)

(3)

- 1

- 2

- 10

- 1

- 10

- 1

- 10

(mA)

I (mA)

V_CE= -5 V

I_C/I_B= 20

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −40 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −40 °C

Fig. 4. DC current gain as a function of collector

current; typical values

Fig. 5. Collector-emitter saturation voltage as a

function of collector current; typical values

006aab075

006aab076

- 1

CEsat

(V)

CEsat

(V)

(1)

(2)

(3)

- 1

- 10

(1)

(3)

(2)

- 2

- 10

- 1

- 10

(mA)

I (mA)

I_C/I_B= 50

I_C/I_B= 100

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −40 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −40 °C

Fig. 6. Collector-emitter saturation voltage as a

function of collector current; typical values

Fig. 7. Collector-emitter saturation voltage as a

function of collector current; typical values

PBRP113ET-Q

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Product data sheet

6 May 2021

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Nexperia

PBRP113ET-Q

40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ

006aab077

006aab078

- 10

I(on)

(V)

I(off)

(V)

(1)

(2)

(1)

(2)

- 1

(3)

- 1

- 10

- 1

- 10

- 1

- 10

- 1

- 10

- 1

- 10

(mA)

I (mA)

V_CE= -0.3 V

V_CE= -5 V

(1) T_amb= -40 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= -40 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig. 8. On-state input voltage as a function of collector Fig. 9. Off-state input voltage as a function of collector

current; typical values current; typical values

PBRP113ET-Q

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Product data sheet

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Nexperia

PBRP113ET-Q

40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ

11. Test information

Resistor calculation

•

Calculation of bias resistor 1 (R1)

•

Calculation of bias resistor ratio (R2/R1)

n.c.

; I

I1 I2

; I

I3 I4

GND

aaa-020083

Fig. 10. Resistor test circuit

Resistor test conditions

Table 8. Resistor test conditions

Type number

R1 (kΩ)

R2 (kΩ)

Test conditions

I_I1

I_I2

I_I3

PBRP113ET

-1.6 mA

-1.7 mA

1.65 mA

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

PBRP113ET-Q

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Product data sheet

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Nexperia

PBRP113ET-Q

40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ

12. Package outline

3.0

2.8

1.1

0.9

0.45

0.15

2.5 1.4

2.1 1.2

0.48

0.38

0.15

0.09

1.9

Dimensions in mm

18-03-12

Fig. 11. Package outline SOT23

13. Soldering

3.3

2.9

1.9

solder lands

solder resist

1.7

solder paste

occupied area

0.6

0.7

(3×)

Dimensions in mm

0.5

(3×)

0.6

(3×)

sot023_fr

Fig. 12. Reflow soldering footprint for SOT23

PBRP113ET-Q

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Product data sheet

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PBRP113ET-Q

40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ

2.2

1.2

(2×)

1.4

(2×)

solder lands

solder resist

2.6

4.6

occupied area

Dimensions in mm

1.4

preferred transport direction during soldering

2.8

4.5

sot023_fw

Fig. 13. Wave soldering footprint for SOT23

PBRP113ET-Q

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Product data sheet

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Nexperia

PBRP113ET-Q

40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ

14. Revision history

Table 9. Revision history

Data sheet ID

PBRP113ET-Q v.2

Modifications:

Release date

20210506

Data sheet status

Change notice

Supersedes

Product data sheet

PBRP113ET-Q v.1

•

Features and benefits: added recommendation for automotive applications

PBRP113ET-Q v.1

20210331 Product data sheet

PBRP113ET-Q

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Product data sheet

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Nexperia

PBRP113ET-Q

40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ

equipment, nor in applications where failure or malfunction of an Nexperia

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Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

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[1][2]

status [3]

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PBRP113ET-Q

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Product data sheet

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Nexperia

PBRP113ET-Q

40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking..........................................................................2

8. Limiting values............................................................. 3

9. Thermal characteristics............................................... 4

10. Characteristics............................................................5

11. Test information..........................................................8

12. Package outline.......................................................... 9

13. Soldering..................................................................... 9

14. Revision history........................................................11

15. Legal information......................................................12

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 6 May 2021

PBRP113ET-Q

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Product data sheet

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PBRP113ET-Q [NEXPERIA]

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