PBSS302ND [NEXPERIA]
40 V, 4 A NPN low VCEsat transistorProduction;
| 型号： | PBSS302ND |
| 厂家： | 
Nexperia |
| 描述： | 40 V, 4 A NPN low VCEsat transistorProduction 开关 光电二极管 晶体管 |
| 文件： | 总13页 (文件大小：293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBSS302ND
40 V, 4 A NPN low VCEsat transistor
20 April 2023
Product data sheet
1. General description
NPN low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic
package.
PNP complement: PBSS302PD
2. Features and benefits
•
Ultra low collector-emitter saturation voltage VCEsat
•
•
•
•
•
4 A continuous collector current capability IC
Up to 15 A peak current
Very low collector-emitter saturation resistance
High efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
Power management functions
Charging circuits
DC-to-DC conversion
MOSFET gate driving
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
40
V
IC
collector current
[1]
-
-
-
-
4
A
ICM
peak collector current single pulse; tp ≤ 1 ms
-
15
75
A
RCEsat
collector-emitter
saturation resistance
IC = 6 A; IB = 600 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
55
mΩ
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Nexperia
PBSS302ND
40 V, 4 A NPN low VCEsat transistor
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
collector
collector
base
Simplified outline
Graphic symbol
C
C
B
E
C
C
C
6
5
4
3
2
3
B
4
emitter
1
2
E
5
collector
collector
TSOP6 (SOT457)
sym123
6
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PBSS302ND
TSOP6
plastic, surface-mounted package (SC-74; TSOP6); 6
leads
SOT457
7. Marking
Table 4. Marking codes
Type number
Marking code
C7
PBSS302ND
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
Unit
V
collector-base voltage
open emitter
-
60
collector-emitter voltage open base
-
40
V
emitter-base voltage
collector current
open collector
-
5
V
[1]
-
4
A
ICM
peak collector current
base current
single pulse; tp ≤ 1 ms
-
15
A
IB
-
0.8
2
A
IBM
peak base current
total power dissipation
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
-
mA
mW
mW
mW
W
Ptot
[2]
-
360
600
750
1.1
2.5
150
150
[3]
-
[4]
-
[1]
-
[2] [5]
-
W
Tj
junction temperature
ambient temperature
-
°C
°C
Tamb
-65
©
PBSS302ND
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Nexperia B.V. 2023. All rights reserved
Product data sheet
20 April 2023
2 / 13
Nexperia
PBSS302ND
40 V, 4 A NPN low VCEsat transistor
Symbol
Parameter
Conditions
Min
Max
Unit
Tstg
storage temperature
-65
150
°C
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[5] Operated under pulsed conditions: Duty cycle δ ≤ 10 % and pulse width tp ≤ 10 ms.
006aaa270
1600
P
tot
(mW)
1200
(1)
(2)
(3)
800
400
0
(4)
- 75
- 25
25
75
125
175
(°C)
T
amb
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, mounting pad for collector 1 cm2
(4) FR4 PCB, standard footprint
Fig. 1. Power derating curves
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
K/W
K/W
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
-
-
-
-
-
-
-
-
-
-
-
-
350
208
167
113
50
[2]
[3]
[4]
[1] [5]
Rth(j-sp)
thermal resistance from
junction to solder point
45
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[5] Operated under pulsed conditions: Duty cycle δ ≤ 10 % and pulse width tp ≤ 10 ms.
©
PBSS302ND
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
20 April 2023
3 / 13
Nexperia
PBSS302ND
40 V, 4 A NPN low VCEsat transistor
006aaa271
3
10
duty cycle =
Z
th(j-a)
1
(K/W)
0.75
0.33
0.5
2
10
0.2
0.1
0.05
10
0.02
0.01
1
0
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa272
3
10
Z
th(j-a)
(K/W)
duty cycle =
1
0.75
2
10
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
- 1
10
- 5
- 4
10
- 3
- 2
- 1
10
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1 cm2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa273
3
10
Z
th(j-a)
(K/W)
duty cycle =
1
2
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm2
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS302ND
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Nexperia B.V. 2023. All rights reserved
Product data sheet
20 April 2023
4 / 13
Nexperia
PBSS302ND
40 V, 4 A NPN low VCEsat transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
100
50
Unit
nA
ICBO
collector-base cut-off
current
VCB = 40 V; IE = 0 A; Tamb = 25 °C
VCB = 40 V; IE = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-
-
µA
IEBO
ICES
hFE
emitter-base cut-off
current
100
nA
collector-emitter cut-off VCE = 30 V; VBE = 0 V; Tamb = 25 °C
current
-
-
100
nA
DC current gain
VCE = 2 V; IC = 0.5 A; Tamb = 25 °C
300
300
500
475
-
-
VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
250
100
50
385
190
100
-
-
-
VCE = 2 V; IC = 4 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
VCE = 2 V; IC = 6 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
VCEsat
collector-emitter
saturation voltage
IC = 0.5 A; IB = 50 mA; Tamb = 25 °C
IC = 1 A; IB = 50 mA; Tamb = 25 °C
IC = 2 A; IB = 200 mA; Tamb = 25 °C
-
-
-
-
35
60
mV
mV
mV
mV
65
110
180
300
115
220
IC = 4 A; IB = 400 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 6 A; IB = 600 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
330
55
450
75
mV
mΩ
RCEsat
VBEsat
collector-emitter
saturation resistance
base-emitter saturation IC = 0.5 A; IB = 50 mA; Tamb = 25 °C
-
-
-
0.79
0.81
0.83
0.85
0.9
1
V
V
V
voltage
IC = 1 A; IB = 50 mA; Tamb = 25 °C
IC = 1 A; IB = 100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 4 A; IB = 400 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
1
1.1
1
V
V
VBEon
base-emitter turn-on
voltage
VCE = 2 V; IC = 2 A; Tamb = 25 °C
0.79
td
tr
delay time
VCC = 10 V; IC = 2 A; IBon = 0.1 A;
IBoff = -0.1 A; Tamb = 25 °C
-
-
-
-
-
-
-
12
-
-
-
-
-
-
-
ns
rise time
52
ns
ton
ts
turn-on time
storage time
fall time
64
ns
390
120
510
150
ns
tf
ns
toff
fT
turn-off time
transition frequency
ns
VCE = 10 V; IC = 0.1 A; f = 100 MHz;
Tamb = 25 °C
MHz
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C
-
30
-
pF
©
PBSS302ND
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
20 April 2023
5 / 13
Nexperia
PBSS302ND
40 V, 4 A NPN low VCEsat transistor
006aaa274
006aaa280
14
12
10
8
1000
I
C
h
FE
(A)
I
(mA) = 400
B
360
320
280
240
200
160
800
(1)
(2)
600
400
200
0
120
80
6
40
(3)
4
2
0
- 1
2
3
4
5
10
1
10
10
10
10
10
(mA)
0
0.4
0.8
1.2
1.6
2.0
(V)
I
V
C
CE
VCE = 2 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 6. Collector current as a function of collector-
emitter voltage; typical values
Fig. 5. DC current gain as a function of collector
current; typical values
006aaa275
006aaa344
1.6
1.6
V
V
BEsat
BE
(V)
(V)
1.2
1.2
(1)
(1)
0.8
0.8
(2)
(2)
(3)
(3)
0.4
0.4
0
10
0
10
- 1
2
3
4
5
- 1
2
3
4
5
1
10
10
10
10
10
(mA)
1
10
10
10
10
10
(mA)
C
I
I
C
VCE = 2 V
IC/IB = 20
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 7. Base-emitter voltage as a function of collector Fig. 8. Base-emitter saturation voltage as a function of
current; typical values
collector current; typical values
©
PBSS302ND
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
20 April 2023
6 / 13
Nexperia
PBSS302ND
40 V, 4 A NPN low VCEsat transistor
006aaa276
006aaa277
1
1
V
V
CEsat
CEsat
(V)
(1)
(2)
(3)
(V)
- 1
- 1
- 2
- 3
10
10
(1)
(2)
- 2
10
10
10
(3)
- 3
10
- 1
2
3
4
5
- 1
2
3
4
5
10
1
10
10
10
10
10
(mA)
10
1
10
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 10. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa281
006aaa326
3
3
10
10
R
CEsat
R
CEsat
(Ω)
(Ω)
2
10
2
10
(1)
(2)
10
10
(3)
1
1
(1)
(2)
(3)
- 1
- 1
10
10
- 2
- 2
10
10
- 1
2
3
4
5
- 1
2
3
4
5
10
1
10
10
10
10
10
(mA)
10
1
10
10
10
10
10
(A)
C
I
I
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig. 12. Collector-emitter saturation resistance as a
function of collector current; typical values
©
PBSS302ND
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
20 April 2023
7 / 13
Nexperia
PBSS302ND
40 V, 4 A NPN low VCEsat transistor
11. Test information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig. 13. Switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
R2
V
I
DUT
R1
mlb826
Fig. 14. Test circuit for switching times
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
©
PBSS302ND
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
20 April 2023
8 / 13
Nexperia
PBSS302ND
40 V, 4 A NPN low VCEsat transistor
12. Package outline
3.1
2.7
1.1
0.9
6
5
4
0.6
0.2
3.0
2.5 1.3
1.7
pin 1 index
1
2
3
0.26
0.10
0.40
0.25
0.95
1.9
Dimensions in mm
18-03-11
Fig. 15. Package outline TSOP6 (SOT457)
13. Soldering
3.45
1.95
0.55
(6×)
solder lands
solder resist
0.45
(6×)
0.95
3.3 2.825
0.95
solder paste
occupied area
0.7
Dimensions in mm
(6×)
0.8
(6×)
2.4
sot457_fr
Fig. 16. Reflow soldering footprint for TSOP6 (SOT457)
©
PBSS302ND
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Nexperia B.V. 2023. All rights reserved
Product data sheet
20 April 2023
9 / 13
Nexperia
PBSS302ND
40 V, 4 A NPN low VCEsat transistor
5.3
1.5
(4×)
solder lands
1.475
1.475
solder resist
occupied area
0.45
(2×)
5.05
Dimensions in mm
preferred transport
direction during soldering
1.45
(6×)
2.85
sot457_fw
Fig. 17. Wave soldering footprint for TSOP6 (SOT457)
©
PBSS302ND
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
20 April 2023
10 / 13
Nexperia
PBSS302ND
40 V, 4 A NPN low VCEsat transistor
14. Revision history
Table 8. Revision history
Data sheet ID
PBSS302ND v.3
Modifications:
Release date
20230420
Data sheet status
Change notice
Supersedes
Product data sheet
-
PBSS302ND_2
•
The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia.
•
•
Legal texts have been adapted to the new company name where appropriate.
Section "Packing information" removed.
PBSS302ND_2
PBSS302ND_1
20080218
20050419
Product data sheet
Product data sheet
-
-
PBSS302ND_1
-
©
PBSS302ND
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Nexperia B.V. 2023. All rights reserved
Product data sheet
20 April 2023
11 / 13
Nexperia
PBSS302ND
40 V, 4 A NPN low VCEsat transistor
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15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
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products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
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data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
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the preliminary specification.
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Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
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[2] The term 'short data sheet' is explained in section "Definitions".
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for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
©
PBSS302ND
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
20 April 2023
12 / 13
Nexperia
PBSS302ND
40 V, 4 A NPN low VCEsat transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 3
10. Characteristics............................................................5
11. Test information..........................................................8
12. Package outline.......................................................... 9
13. Soldering..................................................................... 9
14. Revision history........................................................11
15. Legal information......................................................12
© Nexperia B.V. 2023. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 20 April 2023
©
PBSS302ND
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
20 April 2023
13 / 13
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