PBSS302NZ [NEXPERIA]
20 V, 5.8 A NPN low VCEsat transistorProduction;
| 型号： | PBSS302NZ |
| 厂家： | 
Nexperia |
| 描述： | 20 V, 5.8 A NPN low VCEsat transistorProduction 开关 光电二极管 晶体管 |
| 文件： | 总13页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBSS302NZ
20 V, 5.8 A NPN low VCEsat transistor
12 January 2023
Product data sheet
1. General description
NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic
package.
PNP complement: PBSS302PZ
2. Features and benefits
•
Low collector-emitter saturation voltage VCEsat
•
•
•
•
•
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
AEC-Q101 qualified
3. Applications
•
•
•
•
•
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
20
V
IC
collector current
-
-
-
-
5.8
11.6
43
A
ICM
peak collector current single pulse; tp ≤ 1 ms
-
A
RCEsat
collector-emitter
saturation resistance
IC = 4 A; IB = 200 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
30
mΩ
Nexperia
PBSS302NZ
20 V, 5.8 A NPN low VCEsat transistor
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
base
Simplified outline
Graphic symbol
B
C
E
C
C
4
2
collector
emitter
B
3
1
2
3
E
4
collector
SC-73 (SOT223)
sym123
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PBSS302NZ
SC-73
plastic, surface-mounted package with increased heatsink; SOT223
4 leads; 2.3 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
S302NZ
PBSS302NZ
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
20
Unit
V
collector-base voltage
open emitter
-
collector-emitter voltage open base
-
20
V
emitter-base voltage
collector current
open collector
-
5
V
-
5.8
11.6
0.7
1.7
2
A
ICM
peak collector current
total power dissipation
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
-
A
Ptot
[1]
[2]
[3]
-
W
W
W
°C
°C
°C
-
-
Tj
junction temperature
ambient temperature
storage temperature
-
150
150
150
Tamb
Tstg
-65
-65
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
©
PBSS302NZ
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 January 2023
2 / 13
Nexperia
PBSS302NZ
20 V, 5.8 A NPN low VCEsat transistor
006aaa560
2.5
P
tot
(W)
(1)
(2)
2.0
1.5
1.0
0.5
0
(3)
- 75
- 25
25
75
125
175
(°C)
T
amb
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, standard footprint
Fig. 1. Power derating curves
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
179
74
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
-
-
-
-
-
-
-
-
[2]
[3]
63
Rth(j-sp)
thermal resistance from
junction to solder point
15
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa561
3
10
Z
th(j-a)
(K/W)
δ = 1
0.50
0.75
0.33
2
10
0.20
0.10
0.05
10
0.02
0.01
1
0
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS302NZ
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 January 2023
3 / 13
Nexperia
PBSS302NZ
20 V, 5.8 A NPN low VCEsat transistor
006aaa562
2
10
δ = 1
0.50
0.75
0.33
Z
th(j-a)
(K/W)
0.20
0.10
0.05
10
0.02
0.01
1
0
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa563
2
10
δ = 1
0.75
0.33
Z
th(j-a)
(K/W)
0.50
0.20
10
0.10
0.05
0.02
1
0.01
0
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
Ceramic PCB, Al2O3 standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS302NZ
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 January 2023
4 / 13
Nexperia
PBSS302NZ
20 V, 5.8 A NPN low VCEsat transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
100
50
Unit
nA
ICBO
collector-base cut-off
current
VCB = 20 V; IE = 0 A; Tamb = 25 °C
VCB = 20 V; IE = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-
-
µA
IEBO
hFE
emitter-base cut-off
current
100
nA
DC current gain
VCE = 2 V; IC = 0.5 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
300
570
550
520
450
350
20
-
VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
300
-
VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
250
-
VCE = 2 V; IC = 4 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
200
-
VCE = 2 V; IC = 7 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
200
-
VCEsat
collector-emitter
saturation voltage
IC = 0.5 A; IB = 50 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
25
50
70
100
170
165
240
250
43
60
0.9
1.05
0.85
mV
mV
mV
mV
mV
mV
mV
mV
mΩ
mΩ
V
IC = 1 A; IB = 50 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
35
IC = 1 A; IB = 10 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
50
IC = 2 A; IB = 40 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
70
IC = 4 A; IB = 200 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
120
115
155
170
30
IC = 4 A; IB = 400 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 4 A; IB = 40 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 5.8 A; IB = 290 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
RCEsat
VBEsat
VBEon
collector-emitter
saturation resistance
IC = 4 A; IB = 200 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 4 A; IB = 40 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
38
base-emitter saturation IC = 1 A; IB = 100 mA; pulsed; tp ≤
voltage
0.82
0.92
0.75
300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 4 A; IB = 400 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
V
base-emitter turn-on
voltage
VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
V
td
tr
delay time
rise time
VCC = 12.5 V; IC = 3 A; IBon = 0.15 A;
IBoff = -0.15 A; Tamb = 25 °C
-
-
-
-
-
-
15
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
40
ton
ts
turn-on time
storage time
fall time
55
270
85
tf
toff
turn-off time
335
©
PBSS302NZ
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 January 2023
5 / 13
Nexperia
PBSS302NZ
20 V, 5.8 A NPN low VCEsat transistor
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fT
transition frequency
VCE = 10 V; IC = 100 mA; f = 100 MHz;
Tamb = 25 °C
-
140
-
MHz
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C
-
95
150
pF
006aaa572
006aaa578
1000
14
I
C
(A)
IB (mA) = 50
h
FE
800
12
10
8
(1)
(2)
45
40
35
30
25
20
600
400
200
0
15
10
6
(3)
4
5
2
0
- 1
2
3
4
10
1
10
10
10
10
(mA)
0
1
2
3
4
5
I
V
(V)
CE
C
VCE = 2 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 6. Collector current as a function of collector-
emitter voltage; typical values
Fig. 5. DC current gain as a function of collector
current; typical values
006aaa573
006aaa576
1.2
1.2
V
BE
(V)
V
BEsat
(V)
0.8
0.8
0.4
0
(1)
(2)
(3)
(1)
(2)
(3)
0.4
0
10
- 1
2
3
4
- 1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 7. Base-emitter voltage as a function of collector Fig. 8. Base-emitter saturation voltage as a function of
current; typical values
collector current; typical values
©
PBSS302NZ
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 January 2023
6 / 13
Nexperia
PBSS302NZ
20 V, 5.8 A NPN low VCEsat transistor
006aaa574
006aaa575
1
1
V
V
CEsat
(V)
CEsat
(V)
- 1
- 1
- 2
- 3
10
10
(1)
(2)
(3)
(1)
(2)
- 2
10
10
10
(3)
- 3
10
- 1
2
3
4
- 1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 10. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa577
006aaa579
3
3
10
10
R
CEsat
(Ω)
R
CEsat
(Ω)
2
2
10
10
(1)
(3)
(2)
10
10
1
1
(1)
(2)
(3)
- 1
- 1
10
10
- 2
- 2
10
10
- 1
2
3
4
- 1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig. 12. Collector-emitter saturation resistance as a
function of collector current; typical values
©
PBSS302NZ
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 January 2023
7 / 13
Nexperia
PBSS302NZ
20 V, 5.8 A NPN low VCEsat transistor
11. Test information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig. 13. Switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
R2
V
I
DUT
R1
mlb826
Fig. 14. Test circuit for switching times
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
©
PBSS302NZ
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 January 2023
8 / 13
Nexperia
PBSS302NZ
20 V, 5.8 A NPN low VCEsat transistor
12. Package outline
6.7
6.3
3.1
2.9
1.8
1.5
4
1.1
0.7
7.3
3.7
6.7 3.3
1
2
3
0.8
0.6
0.32
0.22
2.3
4.6
Dimensions in mm
04-11-10
Fig. 15. Package outline SC-73 (SOT223)
13. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
solder resist
4
6.1
3.9
7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig. 16. Reflow soldering footprint for SC-73 (SOT223)
©
PBSS302NZ
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 January 2023
9 / 13
Nexperia
PBSS302NZ
20 V, 5.8 A NPN low VCEsat transistor
8.9
6.7
1.9
solder lands
4
solder resist
occupied area
6.2
8.7
Dimensions in mm
1
2
3
preferred transport
direction during soldering
1.9
(3×)
2.7
2.7
1.9
(2×)
1.1
sot223_fw
Fig. 17. Wave soldering footprint for SC-73 (SOT223)
©
PBSS302NZ
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 January 2023
10 / 13
Nexperia
PBSS302NZ
20 V, 5.8 A NPN low VCEsat transistor
14. Revision history
Table 8. Revision history
Data sheet ID
PBSS302NZ v.3
Modifications:
Release date
20230112
Data sheet status
Change notice
Supersedes
Product data sheet
-
PBSS302NZ_2
•
The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia.
•
•
Legal texts have been adapted to the new company name where appropriate.
Section "Packing information" removed.
PBSS302NZ_2
PBSS302NZ_1
20091120
20060908
Product data sheet
Product data sheet
-
-
PBSS302NZ_1
-
©
PBSS302NZ
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Nexperia B.V. 2023. All rights reserved
Product data sheet
12 January 2023
11 / 13
Nexperia
PBSS302NZ
20 V, 5.8 A NPN low VCEsat transistor
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
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Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
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Characteristics sections of this document is not warranted. Constant or
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specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
©
PBSS302NZ
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 January 2023
12 / 13
Nexperia
PBSS302NZ
20 V, 5.8 A NPN low VCEsat transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 3
10. Characteristics............................................................5
11. Test information..........................................................8
12. Package outline.......................................................... 9
13. Soldering..................................................................... 9
14. Revision history........................................................11
15. Legal information......................................................12
© Nexperia B.V. 2023. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 12 January 2023
©
PBSS302NZ
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
12 January 2023
13 / 13
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