PBSS4021NX [NEXPERIA]
20 V, 7 A NPN low VCEsat (BISS) transistorProduction;
| 型号： | PBSS4021NX |
| 厂家： | 
Nexperia |
| 描述： | 20 V, 7 A NPN low VCEsat (BISS) transistorProduction 开关 晶体管 |
| 文件： | 总14页 (文件大小：721K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
11 December 2012
Product data sheet
1. General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and
flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4021PX.
2. Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
•
•
•
•
•
•
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
3. Applications
Loadswitch
•
•
•
•
•
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
20
V
IC
collector current
-
-
-
-
7
A
ICM
peak collector current single pulse; tp ≤ 1 ms
-
15
28
A
RCEsat
collector-emitter
IC = 5 A; IB = 500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
19
mΩ
saturation resistance
Nexperia
PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
2
1
2
3
E
C
B
emitter
collector
base
3
1
3
2
1
sym042
SOT89
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSS4021NX
SOT89
plastic surface-mounted package; die pad for good heat transfer; SOT89
3 leads
7. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
PBSS4021NX
%6D
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
20
20
5
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
-
-
-
-
-
-
-
-
V
open collector
V
7
A
ICM
peak collector current
base current
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
15
1
A
IB
A
Ptot
total power dissipation
[1]
[2]
[3]
600
mW
1650 mW
2500 mW
-
©
PBSS4021NX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 December 2012
2 / 14
Nexperia
PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
Symbol
Tj
Parameter
Conditions
Min
-
Max
150
150
150
Unit
°C
junction temperature
ambient temperature
storage temperature
Tamb
Tstg
-55
-65
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[2]
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aac174
3.0
P
tot
(W)
(1)
(2)
2.0
1.0
(3)
0.0
- 75
- 25
25
75
125
175
(°C)
T
amb
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, standard footprint
Fig. 1. Power derating curves
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
210
75
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
[3]
-
-
-
-
-
-
-
-
50
Rth(j-sp)
thermal resistance
from junction to solder
point
20
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
©
PBSS4021NX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 December 2012
3 / 14
Nexperia
PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
006aac175
3
10
Z
th(j-a)
duty cycle = 1
(K/W)
0.75
0.5
2
10
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac176
2
10
duty cycle = 1
0.75
Z
th(j-a)
0.5
(K/W)
0.33
0.1
0.2
10
0.05
0.01
0.02
0
1
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS4021NX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 December 2012
4 / 14
Nexperia
PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
006aac177
2
10
duty cycle = 1
Z
th(j-a)
0.75
0.33
(K/W)
0.5
0.2
10
0.1
0.05
0.01
0.02
1
0
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
Ceramic PCB, Al2O3, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
100
50
Unit
nA
ICBO
collector-base cut-off
current
VCB = 20 V; IE = 0 A; Tamb = 25 °C
VCB = 20 V; IE = 0 A; Tj = 150 °C
-
-
-
-
-
-
µA
ICES
IEBO
hFE
collector-emitter cut-off VCE = 16 V; VBE = 0 V; Tamb = 25 °C
current
100
nA
emitter-base cut-off
current
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
100
-
nA
DC current gain
VCE = 2 V; IC = 500 mA; pulsed;
300
550
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
300
300
250
100
-
550
500
450
200
25
-
VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
-
VCE = 2 V; IC = 4 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
-
VCE = 2 V; IC = 8 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
-
VCEsat
collector-emitter
IC = 1 A; IB = 50 mA; pulsed;
38
60
mV
mV
saturation voltage
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 1 A; IB = 10 mA; pulsed;
-
35
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
©
PBSS4021NX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 December 2012
5 / 14
Nexperia
PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IC = 2 A; IB = 40 mA; pulsed;
-
48
75
mV
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 4 A; IB = 200 mA; pulsed;
-
-
-
-
-
-
-
78
120
140
210
28
mV
mV
mV
mΩ
V
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 4 A; IB = 40 mA; pulsed;
85
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 7 A; IB = 350 mA; pulsed;
137
19
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
RCEsat
collector-emitter
IC = 5 A; IB = 500 mA; pulsed;
saturation resistance
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VBEsat
base-emitter saturation IC = 1 A; IB = 100 mA; pulsed;
0.82
0.92
0.74
0.9
voltage
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 4 A; IB = 400 mA; pulsed;
1.05
0.85
V
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VBEon
base-emitter turn-on
voltage
VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
V
td
tr
delay time
VCC = 12.5 V; IC = 1 A; IBon = 0.05 A;
IBoff = -0.05 A; Tamb = 25 °C
-
-
-
-
-
-
-
40
-
-
-
-
-
-
-
ns
rise time
40
ns
ton
ts
turn-on time
storage time
fall time
80
ns
650
75
ns
tf
VCC = 12.5 V; IC = 1 A; IBon = 0.05 A;
IBoff = -0.05 A; Tamb = 25 °C
ns
toff
fT
turn-off time
transition frequency
725
115
ns
VCE = 10 V; IC = 100 mA; f = 100 MHz;
Tamb = 25 °C
MHz
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
85
-
pF
©
PBSS4021NX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 December 2012
6 / 14
Nexperia
PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
006aac178
006aac179
1000
16.0
I
B
(mA) = 70
63
49
h
FE
56
42
I
C
(A)
800
12.0
(1)
(2)
35
21
28
14
600
400
200
0
8.0
4.0
0.0
(3)
7
- 1
2
3
4
5
10
1
10
10
10
10
10
(mA)
0.0
1.0
2.0
3.0
4.0
V
5.0
(V)
I
C
CE
VCE = 2 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 6. Collector current as a function of collector-
emitter voltage; typical values
Fig. 5. DC current gain as a function of collector
current; typical values
006aac180
006aac181
1.2
1.4
V
BE
(V)
V
BEsat
(V)
0.8
1.0
0.6
0.2
(1)
(1)
(2)
(3)
(2)
(3)
0.4
0.0
10
- 1
2
3
4
5
- 1
2
3
4
5
1
10
10
10
10
10
(mA)
10
1
10
10
10
10
10
I (mA)
C
I
C
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 7. Base-emitter voltage as a function of collector Fig. 8. Base-emitter saturation voltage as a function of
current; typical values collector current; typical values
©
PBSS4021NX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 December 2012
7 / 14
Nexperia
PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
006aac182
006aac183
1
1
V
CEsat
(V)
V
CEsat
(V)
- 1
- 2
- 3
- 4
10
- 1
10
(1)
(2)
(2)
(3)
10
10
10
(1)
- 2
10
(3)
- 3
10
- 1
2
3
4
5
- 1
2
3
4
5
10
1
10
10
10
10
10
(mA)
10
1
10
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 10. Collector-emitter saturation voltage as a
function of collector current; typical values
006aac184
006aac185
2
3
10
10
R
CEsat
(Ω)
R
CEsat
(Ω)
2
10
10
10
(1)
(2)
1
1
(1)
(2)
(3)
- 1
10
- 1
10
(3)
- 2
- 2
10
10
- 1
2
3
4
- 1
2
3
4
5
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig. 12. Collector-emitter saturation resistance as a
function of collector current; typical values
©
PBSS4021NX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 December 2012
8 / 14
Nexperia
PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
11. Test information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig. 13. BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
450 Ω
(probe)
oscilloscope
450 Ω
oscilloscope
R2
V
DUT
I
R1
mlb826
Fig. 14. Test circuit for switching times
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
©
PBSS4021NX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 December 2012
9 / 14
Nexperia
PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
12. Package outline
4.6
4.4
1.8
1.4
1.6
1.4
2.6
2.4
4.25
3.75
1.2
0.8
1
2
3
0.53
0.40
0.48
0.35
0.44
0.23
1.5
3
Dimensions in mm
06-08-29
Fig. 15. Package outline SOT89
13. Soldering
4.75
2.25
2
1.9
1.2
0.2
solder lands
solder resist
0.85
1.7
1.2
4.6
4.85
solder paste
occupied area
0.5
1
1.1
(3×)
(2×)
Dimensions in mm
1.5
1.5
0.6
(3×)
0.7
(3×)
3.95
sot089_fr
Fig. 16. Reflow soldering footprint for SOT89
©
PBSS4021NX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 December 2012
10 / 14
Nexperia
PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
6.6
2.4
3.5
solder lands
solder resist
7.6
0.5
occupied area
1.8
Dimensions in mm
(2×)
preferred transport direction during soldering
1.9
1.9
1.5
(2×)
0.7
5.3
sot089_fw
Fig. 17. Wave soldering footprint for SOT89
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PBSS4021NX v.3
Modifications:
20121211
Product data sheet
-
PBSS4021NX v.2
Editorial update
20121009
20100401
•
PBSS4021NX v.2
PBSS4021NX v.1
Product data sheet
Product data sheet
-
-
PBSS4021NX v.1
-
©
PBSS4021NX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 December 2012
11 / 14
Nexperia
PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use in automotive applications — This Nexperia
product has been qualified for use in automotive
Product
[short] data
sheet
Production
This document contains the product
specification.
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
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whether the Nexperia product is suitable and fit for the
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modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
customer’s applications and products planned, as well as for the planned
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with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
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damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
short data sheet, the full data sheet shall prevail.
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
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data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
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source outside of Nexperia.
products are sold subject to the general terms and conditions of commercial
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agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
©
PBSS4021NX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 December 2012
12 / 14
Nexperia
PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PBSS4021NX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 December 2012
13 / 14
Nexperia
PBSS4021NX
20 V, 7 A NPN low VCEsat (BISS) transistor
16. Contents
1
2
3
4
5
6
7
8
9
10
General description ............................................... 1
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................3
Characteristics .......................................................5
11
Test information .....................................................9
11.1
Quality information .........................................
12
13
14
Package outline ................................................... 10
Soldering .............................................................. 10
Revision history ...................................................11
15
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
15.1
15.2
15.3
15.4
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 11 December 2012
©
PBSS4021NX
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 December 2012
14 / 14
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