PBSS4021PZ [NEXPERIA]
20 V, 6.6 A PNP low VCEsat (BISS) transistorProduction;
| 型号： | PBSS4021PZ |
| 厂家： | 
Nexperia |
| 描述： | 20 V, 6.6 A PNP low VCEsat (BISS) transistorProduction |
| 文件： | 总15页 (文件大小：724K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBSS4021PZ
20 V, 6.6 A PNP low VCEsat (BISS) transistor
Rev. 01 — 31 March 2010
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
medium power Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4021NZ.
1.2 Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
Quick reference data
Parameter
Conditions
Min
Typ
Max
−20
−6.6
−20
Unit
V
collector-emitter voltage open base
collector current
-
-
-
-
-
-
A
ICM
peak collector current
single pulse;
A
tp ≤ 1 ms
[1]
RCEsat
collector-emitter
IC = −6 A;
-
22
33
mΩ
saturation resistance
IB = −600 mA
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PBSS4021PZ
Nexperia
20 V, 6.6 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
base
Simplified outline
Graphic symbol
4
2, 4
2
collector
emitter
3
1
4
collector
1
2
3
3
sym028
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSS4021PZ
SC-73
plastic surface-mounted package with increased
heat sink; 4 leads
SOT223
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS4021PZ
PB4021PZ
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
−20
−20
−5
Unit
V
collector-base voltage
open emitter
-
-
-
-
-
collector-emitter voltage open base
V
emitter-base voltage
collector current
open collector
V
−6.6
−20
A
ICM
peak collector current
single pulse;
A
tp ≤ 1 ms
IB
base current
-
−1
A
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Nexperia B.V. 2017. All rights reserved
Product data sheet
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20 V, 6.6 A PNP low VCEsat (BISS) transistor
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
770
Unit
mW
mW
mW
°C
[1]
[2]
[3]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
-
1700
2600
150
-
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
−55
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aac060
3.0
(1)
P
tot
(W)
2.0
(2)
(3)
1.0
0
−75
−25
25
75
125
175
(°C)
T
amb
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
PBSS4021PZ_1
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 01 — 31 March 2010
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20 V, 6.6 A PNP low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
160
75
Unit
K/W
K/W
K/W
K/W
[1]
[2]
[3]
Rth(j-a)
thermal resistance from
in free air
-
-
-
-
-
-
-
-
junction to ambient
50
Rth(j-sp)
thermal resistance from
junction to solder point
11
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aac061
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
0.75
0.5
0.33
10
0.2
0.1
10
0.05
0.02
0.01
1
0
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4021PZ_1
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 01 — 31 March 2010
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20 V, 6.6 A PNP low VCEsat (BISS) transistor
006aac062
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
0.01
1
0
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac063
2
10
duty cycle = 1
Z
th(j-a)
0.75
0.33
(K/W)
0.50
0.20
10
0.10
0.02
0.05
1
0.01
0
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4021PZ_1
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 01 — 31 March 2010
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20 V, 6.6 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
Min
Typ
Max
−100
−55
Unit
nA
ICBO
collector-base cut-off VCB = −20 V; IE = 0 A
-
-
-
-
current
VCB = −20 V; IE = 0 A;
μA
Tj = 150 °C
ICES
IEBO
hFE
collector-emitter
cut-off current
VCE = −16 V; VBE = 0 V
-
-
-
-
−100
−100
nA
nA
emitter-base cut-off VEB = −5 V; IC = 0 A
current
[1]
DC current gain
VCE = −2 V;
250
400
-
IC = −500 mA
V
CE = −2 V; IC = −1 A
250
200
150
100
400
350
250
180
-
-
-
-
VCE = −2 V; IC = −2 A
VCE = −2 V; IC = −4 A
VCE = −2 V; IC = −7 A
[1]
VCEsat
collector-emitter
saturation voltage
IC = −1 A; IB = −50 mA
IC = −1 A; IB = −10 mA
IC = −2 A; IB = −40 mA
IC = −4 A; IB = −200 mA
IC = −4 A; IB = −40 mA
IC = −7 A; IB = −350 mA
IC = −6 A; IB = −600 mA
-
-
-
-
-
-
-
−31
−53
−66
−95
−150
−160
22
−50
mV
mV
mV
mV
mV
mV
mΩ
−80
−100
−140
−225
−240
33
[1]
RCEsat
VBEsat
collector-emitter
saturation resistance
[1]
[1]
[1]
base-emitter
saturation voltage
IC = −1 A; IB = −50 mA
IC = −4 A; IB = −400 mA
-
-
-
−0.79 −0.9
−0.94 −1.05
−0.73 −0.85
V
V
V
VBEon
base-emitter turn-on VCE = −2 V; IC = −2 A
voltage
td
tr
delay time
rise time
VCC = −12.5 V;
IC = −1 A;IBon = −0.05 A;
-
-
-
-
-
-
-
55
-
-
-
-
-
-
-
ns
60
ns
IBoff = 0.05 A
ton
ts
turn-on time
storage time
fall time
115
400
110
510
85
ns
ns
tf
ns
toff
fT
turn-off time
ns
transition frequency VCE = −10 V;
IC = −100 mA;
MHz
f = 100 MHz
Cc
collector capacitance VCB = −10 V;
-
125
-
pF
IE = ie = 0 A; f = 1 MHz
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PBSS4021PZ_1
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 01 — 31 March 2010
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20 V, 6.6 A PNP low VCEsat (BISS) transistor
006aac072
006aac073
600
−20.0
I
(mA) = −250
B
−225
−175
I
C
h
−200
−150
FE
(1)
(2)
(3)
(A)
−15.0
−125
−75
400
200
0
−100
−50
−10.0
−5.0
0.0
−25
−1
2
3
4
5
−10
−1
−10
−10
−10
−10
−10
(mA)
0.0
−1.0
−2.0
−3.0
−4.0
−5.0
(V)
I
C
V
CE
VCE = −2 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3)
Tamb = −55 °C
Fig 5. DC current gain as a function of collector
current; typical values
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
006aac074
006aac075
−1.4
−1.4
V
(V)
V
BEsat
(V)
BE
−1.0
−1.0
−0.6
(1)
(2)
(1)
(2)
(3)
−0.6
(3)
−0.2
−0.2
−1
2
3
4
5
−1
2
3
4
5
−10
−1
−10
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
−10
(mA)
I
I
C
C
VCE = −2 V
amb = −55 °C
IC/IB = 20
(1) Tamb = −55 °C
(1)
T
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS4021PZ_1
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 01 — 31 March 2010
7 of 15
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20 V, 6.6 A PNP low VCEsat (BISS) transistor
006aac076
006aac077
−1
−10
V
CEsat
(V)
V
CEsat
(V)
−1
−1
−10
−10
−10
(1)
(2)
(3)
−1
−10
−10
−10
(1)
(2)
−2
−2
(3)
−3
−10
−3
−10
−1
2
3
4
5
−1
2
3
4
5
−1
−10
−10
−10
−10
−10
(mA)
−1
−10
−10
−10
−10
−10
(mA)
I
I
C
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(3)
Tamb = −55 °C
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
006aac078
006aac079
2
3
10
10
R
CEsat
(Ω)
R
CEsat
(Ω)
2
10
10
1
(1)
10
(2)
(3)
1
(1)
(2)
(3)
−1
10
−1
10
−2
−10
−2
−10
10
10
−1
2
3
4
5
−1
2
3
4
5
−1
−10
−10
−10
−10
−10
(mA)
−1
−10
−10
−10
−10
−10
(mA)
I
I
C
C
IC/IB = 20
amb = 100 °C
Tamb = 25 °C
(1)
T
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS4021PZ_1
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 01 — 31 March 2010
8 of 15
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Nexperia
20 V, 6.6 A PNP low VCEsat (BISS) transistor
8. Test information
−
I
B
input pulse
90 %
(idealized waveform)
−
I
(100 %)
Bon
10 %
−
I
Boff
output pulse
−
(idealized waveform)
I
C
90 %
−
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
006aaa266
t
t
off
on
Fig 13. BISS transistor switching time definition
V
V
CC
BB
R
R
C
B
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
I
DUT
R1
mgd624
Fig 14. Test circuit for switching times
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PBSS4021PZ_1
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 01 — 31 March 2010
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20 V, 6.6 A PNP low VCEsat (BISS) transistor
9. Package outline
6.7
6.3
3.1
2.9
1.8
1.5
4
1.1
0.7
7.3 3.7
6.7 3.3
1
2
3
0.8
0.6
0.32
0.22
2.3
4.6
Dimensions in mm
04-11-10
Fig 15. Package outline SOT223 (SC-73)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
Packing quantity
1000
-115
4000
PBSS4021PZ SOT223 8 mm pitch, 12 mm tape and reel
-135
[1] For further information and the availability of packing methods, see Section 14.
PBSS4021PZ_1
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 01 — 31 March 2010
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Nexperia
20 V, 6.6 A PNP low VCEsat (BISS) transistor
11. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
solder resist
4
6.1
3.9
7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig 16. Reflow soldering footprint SOT223 (SC-73)
8.9
6.7
1.9
solder lands
4
solder resist
6.2
8.7
occupied area
Dimensions in mm
1
2
3
preferred transport
direction during soldering
1.9
(3×)
2.7
2.7
1.9
(2×)
1.1
sot223_fw
Fig 17. Wave soldering footprint SOT223 (SC-73)
PBSS4021PZ_1
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 01 — 31 March 2010
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20 V, 6.6 A PNP low VCEsat (BISS) transistor
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBSS4021PZ_1
20100331
Product data sheet
-
-
PBSS4021PZ_1
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 01 — 31 March 2010
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20 V, 6.6 A PNP low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nexperia.com.
malfunction of a Nexperia product can reasonably be expected
13.2 Definitions
to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the Nexperia product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. Nexperia does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
13.3 Disclaimers
Terms and conditions of commercial sale — Nexperia
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
PBSS4021PZ_1
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 01 — 31 March 2010
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20 V, 6.6 A PNP low VCEsat (BISS) transistor
14. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
PBSS4021PZ_1
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 01 — 31 March 2010
14 of 15
PBSS4021PZ
Nexperia
20 V, 6.6 A PNP low VCEsat (BISS) transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
Quality information . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 31 March 2010
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