PBSS4160DS [NEXPERIA]
60 V, 1 A NPN/NPN low VCEsat (BISS) transistorProduction;
| 型号： | PBSS4160DS |
| 厂家： | 
Nexperia |
| 描述： | 60 V, 1 A NPN/NPN low VCEsat (BISS) transistorProduction 开关 光电二极管 晶体管 |
| 文件： | 总15页 (文件大小：324K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
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Kind regards,
Team Nexperia
PBSS4160DS
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
Rev. 04 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457
(SC-74) Surface Mounted Device (SMD) plastic package.
PNP/PNP complement: PBSS5160DS.
1.2 Features
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Dual low power switches (e.g. motors, fans)
Automotive applications
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max Unit
VCEO
IC
collector-emitter voltage
open base
-
-
-
-
-
-
60
1
V
A
A
[1]
[2]
collector current
ICM
peak collector current
single pulse;
tp ≤ 1 ms
2
RCEsat
collector-emitter saturation
resistance
IC = 1 A;
IB = 100 mA
-
200
250
mΩ
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PBSS4160DS
NXP Semiconductors
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
emitter TR1
base TR1
Simplified outline
Symbol
6
5
4
6
5
2
4
2
3
collector TR2
emitter TR2
base TR2
TR2
TR1
1
4
1
2
3
5
3
6
collector TR1
sym020
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSS4160DS
SC-74
plastic surface mounted package (TSOP6); 6 leads
SOT457
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS4160DS
B8
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Per transistor
Conditions
Min
Max
Unit
VCBO
VCEO
VEBO
IC
collector-base voltage
open emitter
open base
-
-
-
-
-
-
-
-
-
80
60
5
V
collector-emitter voltage
emitter-base voltage
collector current
V
open collector
V
[1]
[2]
[3]
0.87
1
A
A
1
A
ICM
IB
peak collector current
base current
single pulse; tp ≤ 1 ms
single pulse; tp ≤ 1 ms
2
A
300
1
mA
A
IBM
peak base current
PBSS4160DS_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 11 December 2009
2 of 14
PBSS4160DS
NXP Semiconductors
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
290
370
450
Unit
mW
mW
mW
[1]
[2]
[3]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
-
-
Per device
[1]
[2]
[3]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
420
mW
mW
mW
°C
-
560
-
700
Tj
junction temperature
ambient temperature
storage temperature
-
150
Tamb
Tstg
−65
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa493
800
(1)
P
tot
(mW)
600
(2)
(3)
400
200
0
0
40
80
120
160
(°C)
T
amb
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
PBSS4160DS_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 11 December 2009
3 of 14
PBSS4160DS
NXP Semiconductors
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max
Unit
[1]
[2]
[3]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
-
-
-
-
431
338
278
105
K/W
K/W
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
Per device
[1]
[2]
[3]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
-
-
298
223
179
K/W
K/W
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa494
3
10
δ = 1
Z
th(j-a)
0.75
0.33
(K/W)
0.50
2
10
0.20
0.10
0.05
0.02
0.01
10
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
PBSS4160DS_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 11 December 2009
4 of 14
PBSS4160DS
NXP Semiconductors
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
006aaa495
3
10
Z
th(j-a)
δ = 1
(K/W)
0.75
0.33
0.50
0.20
0.10
0.05
2
10
10
0.02
0.01
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
006aaa496
3
10
Z
th(j-a)
δ = 1
(K/W)
0.75
0.33
0.50
0.20
0.10
0.05
2
10
10
0.02
0.01
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
PBSS4160DS_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 11 December 2009
5 of 14
PBSS4160DS
NXP Semiconductors
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
T
amb = 25 °C unless otherwise specified.
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max Unit
ICBO
collector-base cut-off
current
VCB = 60 V; IE = 0 A
-
-
-
-
100
50
nA
VCB = 60 V; IE = 0 A;
μA
Tj = 150 °C
ICES
collector-emitter cut-off
current
VCE = 60 V; VBE = 0 V
-
-
100
nA
nA
IEBO
hFE
emitter-base cut-off current VEB = 5 V; IC = 0 A
-
-
100
-
DC current gain
VCE = 5 V; IC = 1 mA
VCE = 5 V; IC = 500 mA
VCE = 5 V; IC = 1 A
250
500
420
180
90
[1]
[1]
200
-
100
-
VCEsat
collector-emitter saturation IC = 100 mA; IB = 1 mA
voltage
-
-
-
-
110
140
250
250
mV
mV
mV
mΩ
IC = 500 mA; IB = 50 mA
115
200
200
[1]
[1]
IC = 1 A; IB = 100 mA
RCEsat
VBEsat
VBEon
collector-emitter saturation IC = 1 A; IB = 100 mA
resistance
[1]
[1]
base-emitter saturation
voltage
IC = 1 A; IB = 50 mA
-
-
0.95 1.1
0.82 0.9
V
V
base-emitter turn-on
voltage
VCE = 5 V; IC = 1 A
td
tr
delay time
IC = 0.5 A; IBon = 25 mA;
IBoff = −25 mA
-
11
-
-
-
-
-
-
-
ns
rise time
-
78
ns
ton
ts
turn-on time
storage time
fall time
-
90
ns
-
340
160
500
220
ns
tf
-
ns
toff
fT
turn-off time
transition frequency
-
ns
VCE = 10 V; IC = 50 mA;
f = 100 MHz
150
MHz
Cc
collector capacitance
VCB = 10 V;IE = ie = 0 A;
f = 1 MHz
-
5.5
10
pF
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PBSS4160DS_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 11 December 2009
6 of 14
PBSS4160DS
NXP Semiconductors
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
006aaa505
006aaa506
800
1.2
V
(V)
BE
h
FE
(1)
(2)
1.0
0.8
0.6
0.4
0.2
600
(1)
(2)
(3)
400
200
0
(3)
−1
2
3
4
−1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
VCE = 5 V
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 5. DC current gain as a function of collector
current; typical values
Fig 6. Base-emitter voltage as a function of collector
current; typical values
006aaa513
006aaa514
1
1
V
CEsat
(V)
V
CEsat
(V)
−1
10
(1)
(2)
−1
10
(1)
(2)
(3)
(3)
−2
10
−2
10
−3
10
10
10
−1
2
3
4
−1
2
3
4
1
10
10
10
10
(mA)
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
PBSS4160DS_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 11 December 2009
7 of 14
PBSS4160DS
NXP Semiconductors
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
006aaa509
006aaa515
3
1.2
10
V
BEsat
(V)
R
CEsat
(Ω)
1.0
0.8
0.6
0.4
0.2
2
10
(1)
(2)
(3)
10
(1)
(2)
(3)
1
−1
10
10
−1
2
3
4
−1
2
3
4
10
1
10
10
10
10
(mA)
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 9. Base-emitter saturation voltage as a function
of collector current; typical values
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
006aaa511
006aaa516
3
2.0
10
I
B
(mA) = 65.0
58.5
45.5
I
C
(A)
R
CEsat
52.0
39.0
(Ω)
1.6
32.5
19.5
2
10
26.0
13.0
6.5
1.2
0.8
0.4
0
10
(1)
(2)
1
(3)
−1
10
10
−1
2
3
4
0
1
2
3
4
5
1
10
10
10
10
(mA)
C
V
(V)
I
CE
Tamb = 25 °C
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS4160DS_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 11 December 2009
8 of 14
PBSS4160DS
NXP Semiconductors
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
8. Test information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig 13. BISS transistor switching time definition
V
V
CC
BB
R
R
C
B
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
I
DUT
R1
mlb826
IC = 0.5 A; IBon = 25 mA; IBoff = −25 mA; R1 = open; R2 = 100 Ω; RB = 300 Ω; RC = 20 Ω
Fig 14. Test circuit for switching times
PBSS4160DS_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 11 December 2009
9 of 14
PBSS4160DS
NXP Semiconductors
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
9. Package outline
3.1
2.7
1.1
0.9
6
5
4
0.6
0.2
3.0 1.7
2.5 1.3
pin 1 index
1
2
3
0.26
0.10
0.40
0.25
0.95
1.9
Dimensions in mm
04-11-08
Fig 15. Package outline SOT457 (SC-74)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
-115
-125
10000
-135
[2]
[3]
PBSS4160DS
SOT457
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-165
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
PBSS4160DS_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 11 December 2009
10 of 14
PBSS4160DS
NXP Semiconductors
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
11. Soldering
3.45
1.95
solder lands
0.95
solder resist
0.45 0.55
2.825
3.30
occupied area
solder paste
1.60
1.70
3.10
3.20
msc422
Dimensions in mm
Fig 16. Reflow soldering footprint
5.30
solder lands
5.05
0.45 1.45 4.45
solder resist
occupied area
msc423
1.40
4.30
Dimensions in mm
Fig 17. Wave soldering footprint
PBSS4160DS_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 11 December 2009
11 of 14
PBSS4160DS
NXP Semiconductors
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
12. Revision history
Table 9.
Revision history
Document ID
PBSS4160DS_4
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20091211
Product data sheet
-
PBSS4160DS_3
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
• Figure 17 “Wave soldering footprint”: updated
PBSS4160DS_3
PBSS4160DS_2
PBSS4160DS_1
20060209
20050627
20040426
Product data sheet
Product data sheet
Objective data sheet
-
-
-
PBSS4160DS_2
PBSS4160DS_1
-
PBSS4160DS_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 11 December 2009
12 of 14
PBSS4160DS
NXP Semiconductors
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PBSS4160DS_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 11 December 2009
13 of 14
PBSS4160DS
NXP Semiconductors
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
3
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 December 2009
Document identifier: PBSS4160DS_4
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