PBSS4160V [NEXPERIA]

60 V, 1 A NPN low VCEsat (BISS) transistorProduction;
PBSS4160V
型号: PBSS4160V
厂家: Nexperia    Nexperia
描述:

60 V, 1 A NPN low VCEsat (BISS) transistorProduction

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PBSS4160V  
60 V, 1 A NPN low VCEsat (BISS) transistor  
28 December 2022  
Product data sheet  
1. General description  
Low VCEsat(BISS) NPN transistor in a SOT666 ultra small and flat lead Surface-Mounted Device  
(SMD) plastic package.  
PNP complement: PBSS5160V  
2. Features and benefits  
Low collector-emitter saturation voltage VCEsat  
High collector current capability IC and ICM  
High efficiency, reduces heat generation  
Reduces printed-circuit board area required  
Cost effective replacement for medium power transistor BCP55 and BCX55  
3. Applications  
Major application segments:  
Telecom infrastructure  
Industrial  
Power management:  
DC-to-DC conversion  
Supply line switching  
Peripheral driver:  
Driver in low supply voltage applications (e.g. lamps and LEDs)  
Inductive load driver (e.g. relays, buzzers and motors)  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
60  
V
IC  
collector current  
[1]  
-
-
-
-
1
A
ICM  
peak collector current t = 1 ms or limited by Tj(max)  
-
2
A
RCEsat  
collector-emitter  
IC = 1 A; IB = 100 mA; Tamb = 25 °C  
200  
250  
mΩ  
saturation resistance  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.  
 
 
 
 
 
Nexperia  
PBSS4160V  
60 V, 1 A NPN low VCEsat (BISS) transistor  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
collector  
collector  
base  
Simplified outline  
Graphic symbol  
C
C
B
E
C
C
6
5
4
C
2
3
B
4
emitter  
E
5
collector  
collector  
1
2
3
sym123  
SOT666  
6
6. Ordering information  
Table 3. Ordering information  
Type number  
Package  
Name  
Description  
Version  
PBSS4160V  
SOT666  
plastic, surface-mounted package; 6 leads; 0.5 mm pitch; SOT666  
1.6 mm x 1.2 mm x 0.55 mm body  
7. Marking  
Table 4. Marking codes  
Type number  
Marking code  
41  
PBSS4160V  
©
PBSS4160V  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
28 December 2022  
2 / 12  
 
 
 
Nexperia  
PBSS4160V  
60 V, 1 A NPN low VCEsat (BISS) transistor  
8. Limiting values  
Table 5. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Conditions  
Min  
Max  
80  
Unit  
V
collector-base voltage  
open emitter  
-
collector-emitter voltage open base  
-
60  
V
emitter-base voltage  
collector current  
open collector  
-
5
V
[1]  
[2]  
-
0.9  
1
A
-
A
ICM  
IB  
peak collector current  
base current  
t = 1 ms or limited by Tj(max)  
-
2
A
-
300  
1
mA  
A
IBM  
Ptot  
peak base current  
total power dissipation  
pulsed; tp ≤ 300 µs; δ ≤ 0.02  
Tamb ≤ 25 °C  
-
[1]  
[2]  
-
300  
500  
150  
150  
150  
mW  
mW  
°C  
°C  
°C  
-
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
Tamb  
Tstg  
-65  
-65  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.  
001aaa714  
0.6  
P
tot  
(W)  
(1)  
(2)  
0.4  
0.2  
0
0
40  
80  
120  
160  
(°C)  
T
amb  
(1) FR4 PCB; 1 cm2 collector mounting pad  
(2) FR4 PCB; standard footprint  
Fig. 1. Power derating curves  
©
PBSS4160V  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
28 December 2022  
3 / 12  
 
 
Nexperia  
PBSS4160V  
60 V, 1 A NPN low VCEsat (BISS) transistor  
9. Thermal characteristics  
Table 6. Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
415  
250  
Unit  
K/W  
K/W  
Rth(j-a)  
thermal resistance from in free air  
junction to ambient  
[1]  
[2]  
-
-
-
-
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.  
001aaa715  
3
10  
Z
(1)  
(2)  
(3)  
(4)  
(5)  
th  
(K/W)  
2
10  
(6)  
(7)  
(8)  
(9)  
10  
(10)  
1
- 1  
10  
- 5  
- 4  
- 3  
- 2  
- 1  
2
3
10  
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
Mounted on FR4 PCB; standard footprint  
(1) δ = 1  
(2) δ = 0.75  
(3) δ = 0.5  
(4) δ = 0.33  
(5) δ = 0.2  
(6) δ = 0.1  
(7) δ = 0.05  
(8) δ = 0.02  
(9) δ = 0.01  
(10) δ = 0  
Fig. 2. Transient thermal impedance as a function of pulse time; typical values  
©
PBSS4160V  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
28 December 2022  
4 / 12  
 
 
Nexperia  
PBSS4160V  
60 V, 1 A NPN low VCEsat (BISS) transistor  
10. Characteristics  
Table 7. Characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
100  
50  
Unit  
nA  
ICBO  
collector-base cut-off  
current  
VCB = 60 V; IE = 0 A; Tamb = 25 °C  
VCB = 60 V; IE = 0 A; Tj = 150 °C  
VEB = 5 V; IC = 0 A; Tamb = 25 °C  
-
-
-
-
-
-
µA  
IEBO  
ICES  
hFE  
emitter-base cut-off  
current  
100  
nA  
collector-emitter cut-off VCE = 60 V; VBE = 0 V; Tamb = 25 °C  
current  
-
-
100  
nA  
DC current gain  
VCE = 5 V; IC = 1 mA; Tamb = 25 °C  
250  
200  
400  
350  
-
-
VCE = 5 V; IC = 500 mA; pulsed; tp ≤  
300 µs; δ ≤ 0.02; Tamb = 25 °C  
VCE = 5 V; IC = 1 A; pulsed; tp ≤ 300 µs;  
δ ≤ 0.02; Tamb = 25 °C  
100  
150  
-
VCEsat  
collector-emitter  
saturation voltage  
IC = 100 mA; IB = 1 mA; Tamb = 25 °C  
IC = 500 mA; IB = 50 mA; Tamb = 25 °C  
-
-
-
90  
110  
140  
250  
mV  
mV  
mV  
110  
200  
IC = 1 A; IB = 100 mA; pulsed; tp ≤  
300 µs; δ ≤ 0.02; Tamb = 25 °C  
RCEsat  
VBEsat  
VBEon  
collector-emitter  
saturation resistance  
IC = 1 A; IB = 100 mA; Tamb = 25 °C  
-
-
-
200  
250  
1.1  
0.9  
mΩ  
V
base-emitter saturation IC = 1 A; IB = 50 mA; Tamb = 25 °C  
voltage  
0.95  
0.82  
base-emitter turn-on  
voltage  
VCE = 5 V; IC = 1 A; Tamb = 25 °C  
V
td  
tr  
delay time  
VCC = 10 V; IC = 0.5 A; IBon = 25 mA;  
IBoff = -25 mA; Tamb = 25 °C  
-
11  
-
-
-
-
-
-
-
ns  
rise time  
-
78  
ns  
ton  
ts  
turn-on time  
storage time  
fall time  
-
90  
ns  
-
340  
160  
500  
220  
ns  
tf  
-
ns  
toff  
fT  
turn-off time  
transition frequency  
-
ns  
VCE = 10 V; IC = 50 mA; f = 100 MHz;  
Tamb = 25 °C  
150  
MHz  
Cc  
collector capacitance  
VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;  
Tamb = 25 °C  
-
5.5  
10  
pF  
©
PBSS4160V  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
28 December 2022  
5 / 12  
 
Nexperia  
PBSS4160V  
60 V, 1 A NPN low VCEsat (BISS) transistor  
mle130  
mle133  
1.2  
BE  
800  
h
V
FE  
(V)  
(1)  
(2)  
(3)  
600  
400  
200  
0
(1)  
(2)  
0.8  
0.4  
0
(3)  
- 1  
2
3
I
4
- 1  
2
3
I
4
10  
1
10  
10  
10  
10  
(mA)  
C
10  
1
10  
10  
10  
10  
(mA)  
C
VCE = 5 V  
VCE = 5 V  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
(1) Tamb = −55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
Fig. 3. DC current gain as a function of collector  
current; typical values  
Fig. 4. Base-emitter voltage as a function of collector  
current; typical values  
mle135  
mle104  
1
1
V
CEsat  
(V)  
V
CEsat  
(V)  
- 1  
10  
- 1  
10  
(1)  
(3)  
(2)  
- 2  
10  
10  
(1)  
(3)  
(2)  
- 3  
- 2  
10  
- 1  
2
3
I
4
- 1  
2
3
4
10  
1
10  
10  
10  
10  
10  
1
10  
10  
10  
10  
(mA)  
(mA)  
I
C
C
IC/IB = 10  
IC/IB = 20  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
(1) Tamb = 100 °C  
(2) Tamb= 25 °C  
(3) Tamb = −55 °C  
Fig. 5. Collector-emitter saturation voltage as a  
function of collector current; typical values  
Fig. 6. Collector-emitter saturation voltage as a  
function of collector curret; typical values  
©
PBSS4160V  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
28 December 2022  
6 / 12  
Nexperia  
PBSS4160V  
60 V, 1 A NPN low VCEsat (BISS) transistor  
mle129  
mle134  
1.2  
1
V
BEsat  
(V)  
V
CEsat  
(V)  
(1)  
(2)  
(3)  
0.8  
0.4  
0
(1)  
(2)  
- 1  
10  
- 2  
10  
- 1  
2
3
I
4
- 1  
2
3
4
10  
1
10  
10  
10  
10  
(mA)  
10  
1
10  
10  
10  
10  
(mA)  
C
I
C
IC/IB = 20  
Tamb = 25 °C  
(1) IC/IB = 100  
(2) IC/IB = 50  
(1) Tamb = −55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
Fig. 7. Collector-emitter saturation voltage as a  
function of collector current; typical values  
Fig. 8. Base-emitter saturation voltage as a function of  
collector current; typical values  
mle131  
mle132  
3
2
10  
(6) (5) (4) (3) (2)  
(1)  
I
C
R
CEsat  
(Ω)  
(A)  
1.6  
2
10  
(7)  
(8)  
1.2  
0.8  
(9)  
10  
(10)  
1
(1)  
(3)  
0.4  
0
(2)  
- 1  
10  
- 1  
2
3
I
4
0
1
2
3
4
5
10  
1
10  
10  
10  
10  
(mA)  
V
(V)  
C
CE  
Tamb = 25 °C  
(1) IB = 60 mA  
(2) IB = 54 mA  
(3) IB = 48 mA  
(4) IB = 42 mA  
(5) IB = 36 mA  
(6) IB = 30 mA  
(7) IB = 24 mA  
(8) IB = 18 mA  
(9) IB = 12 mA  
(10) IB = 6 mA  
IC/IB = 20  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
Fig. 10. Equivalent on-resistance as a function of  
collector current; typical values  
Fig. 9. Collector current as a function of collector-  
emitter voltage; typical values  
©
PBSS4160V  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
28 December 2022  
7 / 12  
Nexperia  
PBSS4160V  
60 V, 1 A NPN low VCEsat (BISS) transistor  
11. Test information  
I
B
input pulse  
90 %  
(idealized waveform)  
I
(100 %)  
Bon  
10 %  
I
Boff  
output pulse  
(idealized waveform)  
I
C
90 %  
I
(100 %)  
C
10 %  
t
t
t
f
t
t
r
s
d
t
t
off  
on  
006aaa003  
Fig. 11. Switching time definition  
V
V
CC  
BB  
R
B
R
C
V
o
(probe)  
450 Ω  
(probe)  
450 Ω  
oscilloscope  
oscilloscope  
R2  
V
I
DUT  
R1  
mlb826  
Fig. 12. Test circuit for switching times  
©
PBSS4160V  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
28 December 2022  
8 / 12  
 
Nexperia  
PBSS4160V  
60 V, 1 A NPN low VCEsat (BISS) transistor  
12. Package outline  
1.7  
1.5  
0.6  
0.5  
6
5
4
0.3  
0.1  
1.7 1.3  
1.5 1.1  
pin 1 index  
1
2
3
0.18  
0.08  
0.27  
0.17  
0.5  
1
Dimensions in mm  
04-11-08  
Fig. 13. Package outline SOT666  
13. Soldering  
2.75  
2.45  
2.1  
1.6  
solder lands  
0.4  
(6×)  
0.3  
(2×)  
0.25  
(2×)  
placement area  
0.538  
0.55  
1.075  
1.7  
2
(2×)  
solder paste  
occupied area  
0.325 0.375  
(4×) (4×)  
Dimensions in mm  
1.7  
0.45  
(4×)  
0.6  
(2×)  
0.5  
(4×)  
0.65  
(2×)  
sot666_fr  
Fig. 14. Reflow soldering footprint for SOT666  
©
PBSS4160V  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
28 December 2022  
9 / 12  
 
 
Nexperia  
PBSS4160V  
60 V, 1 A NPN low VCEsat (BISS) transistor  
14. Revision history  
Table 8. Revision history  
Data sheet ID  
PBSS4160V v.4  
Modifications:  
Release date  
20221228  
Data sheet status  
Change notice  
Supersedes  
Product data sheet  
-
PBSS4160V_3  
The format of this data sheet has been redesigned to comply with the identity guidelines of  
Nexperia.  
Legal texts have been adapted to the new company name where appropriate.  
Packing information removed.  
Product(s) changed to non-automotive qualification.  
PBSS4160V_3  
PBSS4160V_2  
PBSS4160V_1  
20091211  
20050131  
20040423  
Product data sheet  
Product data sheet  
Objective data sheet  
-
-
-
PBSS4160V_2  
PBSS4160V_1  
-
©
PBSS4160V  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
28 December 2022  
10 / 12  
 
Nexperia  
PBSS4160V  
60 V, 1 A NPN low VCEsat (BISS) transistor  
injury, death or severe property or environmental damage. Nexperia and its  
suppliers accept no liability for inclusion and/or use of Nexperia products in  
such equipment or applications and therefore such inclusion and/or use is at  
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15. Legal information  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Data sheet status  
Document status Product  
Definition  
Applications — Applications that are described herein for any of these  
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or warranty that such applications will be suitable for the specified use  
without further testing or modification.  
[1][2]  
status [3]  
Objective [short]  
data sheet  
Development  
This document contains data from  
the objective specification for  
product development.  
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Preliminary [short]  
data sheet  
Qualification  
Production  
This document contains data from  
the preliminary specification.  
Product [short]  
data sheet  
This document contains the product  
specification.  
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for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale of Nexperia.  
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reference only. The English version shall prevail in case of any discrepancy  
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specifications and product descriptions, at any time and without notice. This  
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©
PBSS4160V  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
28 December 2022  
11 / 12  
 
Nexperia  
PBSS4160V  
60 V, 1 A NPN low VCEsat (BISS) transistor  
Contents  
1. General description......................................................1  
2. Features and benefits.................................................. 1  
3. Applications.................................................................. 1  
4. Quick reference data....................................................1  
5. Pinning information......................................................2  
6. Ordering information....................................................2  
7. Marking..........................................................................2  
8. Limiting values............................................................. 3  
9. Thermal characteristics............................................... 4  
10. Characteristics............................................................5  
11. Test information..........................................................8  
12. Package outline.......................................................... 9  
13. Soldering..................................................................... 9  
14. Revision history........................................................10  
15. Legal information......................................................11  
© Nexperia B.V. 2022. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 28 December 2022  
©
PBSS4160V  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
28 December 2022  
12 / 12  

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