PBSS4240DPN [NEXPERIA]
40 V low VCEsat NPN/PNP transistorProduction;
| 型号： | PBSS4240DPN |
| 厂家： | 
Nexperia |
| 描述： | 40 V low VCEsat NPN/PNP transistorProduction |
| 文件： | 总13页 (文件大小：699K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PBSS4240DPN
40 V low VCEsat NPN/PNP
transistor
Product data sheet
2003 Feb 20
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN/PNP transistor
PBSS4240DPN
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage VCEsat
MAX.
UNIT
NPN PNP
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
SYMBOL
PARAMETER
VCEO
emitter-collector
voltage
40
−40
V
• High efficiency leading to reduced heat generation
• Reduced printed-circuit board area requirements.
IC
collector current (DC)
1.35 −1.1
A
A
ICRP
repetitive peak
collector current
2
3
−2
−3
APPLICATIONS
• Power management:
ICM
peak collector current
A
– Complementary MOSFET driver
– Dual supply line switching.
• Peripheral driver:
RCEsat
equivalent
on-resistance
200 260 mΩ
PINNING
– Half and full bridge motor drivers
– Multi-phase stepper motor driver.
PIN
1, 4
2, 5
6, 3
DESCRIPTION
TR1; TR2
emitter
base
DESCRIPTION
TR1; TR2
TR1; TR2
collector
NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74)
plastic package.
MARKING
6
5
6
5
4
4
handbook, halfpage
TYPE NUMBER
PBSS4240DPN
MARKING CODE
TR2
M3
TR1
1
2
3
1
2
3
Top view
MAM445
Fig.1 Simplified outline SOT457 (SC-74) and
symbol.
2003 Feb 20
2
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN/PNP transistor
PBSS4240DPN
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
NPN
open emitter
open base
−
40
V
V
V
−
40
5
open collector
−
−
−
1.35
−1.1
2
A
A
A
A
PNP
−
ICRP
ICM
IB
repetitive peak collector current
peak collector current
base current (DC)
peak base current
total power dissipation
note 1
−
single peak
−
3
−
300
1
mA
A
IBM
Ptot
−
Tamb ≤ 25 °C; note 2
Tamb ≤ 25 °C; note 3
Tamb ≤ 25 °C; note 1
−
370
310
1.1
+150
150
+150
mW
mW
W
−
−
Tstg
Tj
storage temperature
−65
−
°C
junction temperature
°C
Tamb
operating ambient temperature
−65
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 2
−
600
mW
Notes
1. Operated under pulsed conditions: duty cycle δ ≤ 20%; pulse width tp ≤ 10 ms; mounting pad for collector standard
footprint.
2. Device mounted on a printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board; single-sided copper; tinplated; standard footprint.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Per transistor
Rth j-a
thermal resistance from junction to
ambient
in free air; note 1
in free air; note 2
340
110
K/W
K/W
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2. Operated under pulsed conditions: pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.20; mounting pad for collector standard
footprint.
2003 Feb 20
3
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN/PNP transistor
PBSS4240DPN
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
ICBO
collector-base cut-off current
VCB = 40 V; IE = 0
−
−
−
−
−
−
−
100
50
100
100
−
nA
μA
nA
nA
VCB = 40 V; IE = 0; Tj = 150 °C
VCE = 30 V; IB = 0
−
ICEO
IEBO
hFE
fT
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
−
VEB = 5 V; IC = 0
−
VCE = 5 V; IC = 1 mA
300
150
transition frequency
IC = 50 mA; VCE = 10 V;
f = 100 MHz
−
MHz
pF
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0;
f = 1 MHz
−
−
12
TR1 (NPN)
hFE
DC current gain
VCE = 5 V; IC = 500 mA
VCE = 5 V; IC = 1 A
300
200
75
−
−
900
−
−
VCE = 5 V; IC = 2 A; note 1
IC = 100 mA; IB = 1 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
IC = 2 A; IB = 200 mA; note 1
IC = 1 A; IB = 100 mA
VCE = 5 V; IC = 1 A
−
−
VCEsat
collector-emitter saturation voltage
60
80
150
300
−
75
mV
mV
mV
mV
V
−
100
200
400
1.2
1.1
200
−
−
VBEsat
VBEon
RCEsat
base-emitter saturation voltage
base-emitter turn-on voltage
equivalent on-resistance
−
−
−
V
IC = 1 A; IB = 100 mA
−
−
mΩ
TR2 (PNP)
hFE
DC current gain
VCE = −5 V; IC = −100 mA
VCE = −5 V; IC = −500 mA
VCE = −5 V; IC = −1 A
300
250
160
50
−
−
800
−
−
−
−
VCE = −5 V; IC = −2 A; note 1
IC = −100 mA; IB = −1 mA
IC = −500 mA; IB = −50 mA
IC = −1 A; IB = −100 mA
IC = −2 A; IB = −200 mA; note 1
IC = −1 A; IB = −50 mA
−
−
VCEsat
saturation voltage
−90
−100
−180
−400
−
−120
−145
−260
−530
−1.1
−1
mV
mV
mV
mV
V
−
−
−
VBEsat
VBEon
RCEsat
saturation voltage
−
base-emitter turn-on voltage
equivalent on-resistance
VCE = −5 V; IC = −1 A
−
−
V
IC = −1 A; IB = −100 mA; note 1
−
−
260
mΩ
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2003 Feb 20
4
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN/PNP transistor
PBSS4240DPN
MHC471
MHC472
1.2
800
handbook, halfpage
handbook, halfpage
h
V
FE
BE
(1)
(V)
(1)
(2)
600
0.8
(2)
400
(3)
0.4
(3)
200
0
10
0
10
−1
2
3
I
4
−1
2
3
I
4
1
10
10
10
10
(mA)
C
1
10
10
10
10
(mA)
C
TR1 (NPN); VCE = 5 V.
(1) amb = 150 °C.
TR1 (NPN); VCE = 5 V.
(1) amb = −55 °C.
T
T
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
MHC473
MHC474
3
10
1.2
handbook, halfpage
handbook, halfpage
V
BEsat
V
(V)
CEsat
(mV)
1
(1)
0.8
(2)
2
10
(1)
(2)
0.6
(3)
0.4
(3)
10
10
0.2
10
−1
2
3
I
4
−1
2
3
I
4
1
10
10
10
10
(mA)
1
10
10
10
10
(mA)
C
C
TR1 (NPN); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
TR1 (NPN); IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3)
T
amb = −55 °C.
(3) Tamb = 150 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2003 Feb 20
5
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN/PNP transistor
PBSS4240DPN
MHC475
MHC476
3
2
10
(1)
(2)
(3)
handbook, halfpage
handbook, halfpage
I
C
(A)
R
CEsat
(Ω)
(4)
(5)
(6)
1.6
2
10
(7)
(8)
1.2
0.8
(9)
10
1
(10)
0.4
(1)
(2)
(3)
−1
10
0
0
−1
2
3
I
4
0.4
0.8
1.2
1.6
V
2
10
1
10
10
10
10
(mA)
(V)
C
CE
TR1 (NPN); Tamb = 25 °C.
TR1 (NPN); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) IB = 30 mA.
(2) IB = 27 mA.
(3) IB = 24 mA.
(4) IB = 21 mA.
(5)
I
B = 18 mA.
(9)
IB = 6 mA.
(6) IB = 15 mA.
(7) IB = 12 mA.
(8) IB = 9 mA.
(10) IB = 3 mA.
Fig.7 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
2003 Feb 20
6
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN/PNP transistor
PBSS4240DPN
MHC464
MHC465
−1.2
1000
handbook, halfpage
handbook, halfpage
h
FE
V
BE
(V)
800
(1)
(2)
(1)
−0.8
600
(3)
(2)
400
−0.4
(3)
200
0
−10
0
−10
−1
2
3
4
−1
2
3
4
−1
−10
−10
−10
−10
(mA)
−1
−10
−10
−10
−10
(mA)
I
I
C
C
TR2 (PNP); VCE = −5 V.
(1) amb = 150 °C.
TR2 (PNP); VCE = −5 V.
(1) amb = −55 °C.
T
T
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.8 DC current gain as a function of collector
current; typical values.
Fig.9 Base-emitter voltage as a function of
collector current; typical values.
MHC466
MHC467
3
−1.2
−10
handbook, halfpage
V
handbook, halfpage
BEsat
(V)
V
CEsat
(mV)
−1
2
(1)
−10
−0.8
(1)
(2)
(2)
−0.6
(3)
−10
(3)
−0.4
−0.2
−10
−1
−10
−1
2
3
4
−1
2
3
4
−1
−10
−10
−10
−10
(mA)
−1
−10
−10
−10
−10
(mA)
I
I
C
C
TR2 (PNP); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
TR2 (PNP); IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3)
T
amb = −55 °C.
(3) Tamb = 150 °C.
Fig.10 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.11 Base-emitter saturation voltage as a
function of collector current; typical values.
2003 Feb 20
7
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN/PNP transistor
PBSS4240DPN
MHC468
MHC469
−
C
(A)
−1.2
2.4
handbook, halfpage
handbook, halfpage
I
(1)
(2)
(3)
(4)
(5)
I
(3)
(2)
(4)
(1)
C
−
2
(A)
−
1.6
−
1.2
−
0.8
−
0.4
0
(5)
(6)
−0.8
(6)
(7)
(8)
(7)
(8)
(9)
(10)
(9)
−0.4
(10)
0
−
−
−
−
−
2
(V)
0
−0.4
−0.8
−1.2
−1.4
−2
(V)
0
0.4
0.8
1.2
1.6
V
V
CE
CE
TR2 (PNP); Tamb = 25 °C.
TR2 (PNP); Tamb = 25 °C.
(1) IB = −7 mA.
(2) IB = −6.3 mA.
(3) IB = −5.6 mA.
(4) IB = −4.9 mA.
(5)
I
B = −4.2 mA.
(9)
I
B = −1.4 mA.
(1) IB = −50 mA.
(2) IB = −45 mA.
(3) IB = −40 mA.
(4) IB = −35 mA.
(5)
I
B = −30 mA.
(9)
IB = −10 mA.
(6) IB = −3.5 mA.
(7) IB = −2.8 mA.
(8) IB = −2.1 mA.
(10) IB = −0.7 mA.
(6) IB = −25 mA.
(7) IB = −20 mA.
(8) IB = −15 mA.
(10) IB = −5 mA.
Fig.12 Collector current as a function of
collector-emitter voltage; typical values.
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
2003 Feb 20
8
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN/PNP transistor
PBSS4240DPN
MHC470
3
10
handbook, halfpage
R
CEsat
(Ω)
2
10
10
(1)
(2)
1
(3)
−1
10
−1
2
3
I
4
−10
−1
−10
−10
−10
−10
(mA)
C
TR2 (PNP); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.14 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2003 Feb 20
9
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN/PNP transistor
PBSS4240DPN
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
c
1
2
3
L
p
e
b
p
w
M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
e
H
L
Q
v
w
y
p
1
p
E
0.1
0.013
0.40
0.25
1.1
0.9
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
0.95
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
01-05-04
SOT457
SC-74
2003 Feb 20
10
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN/PNP transistor
PBSS4240DPN
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2003 Feb 20
11
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp12
Date of release: 2003 Feb 20
Document order number: 9397 750 10783
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