PBSS4310PAS-Q [NEXPERIA]
10 V, 3 A NPN low VCEsat transistorProduction;型号: | PBSS4310PAS-Q |
厂家: | Nexperia |
描述: | 10 V, 3 A NPN low VCEsat transistorProduction |
文件: | 总14页 (文件大小:278K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PBSS4310PAS-Q
10 V, 3 A NPN low VCEsat transistor
21 January 2022
Product data sheet
1. General description
NPN low VCEsat transistor, encapsulated in an ultra thin SOT1061D (DFN2020D-3) leadless small
Surface-Mounted Device (SMD) plastic package with medium power capability and side-wettable
flanks (SWF).
2. Features and benefits
•
Very low collector-emitter saturation voltage VCEsat
•
•
•
•
•
•
•
•
•
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
High temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) area requirements
Leadless small SMD plastic package with soldarable side pads
Exposed heat sink for excellent thermal and electrical conductivity
Suitable for Automatic Optical Inspection (AOI) of solder joint
Qualified according to AEC-Q101 and recommended for use in automotive applications
3. Applications
•
•
•
•
•
•
Linear voltage regulation
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
10
V
IC
collector current
DC current gain
-
-
-
3
-
A
hFE
VCE = 2 V; IC = 100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
325
VCEsat
collector-emitter
saturation voltage
IC = 1 A; IB = 10 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
55
mV
Nexperia
PBSS4310PAS-Q
10 V, 3 A NPN low VCEsat transistor
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
base
Simplified outline
Graphic symbol
B
E
C
3
2
emitter
C
3
collector
B
1
2
E
sym021
Transparent top view
DFN2020D-3 (SOT1061D)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PBSS4310PAS-Q
DFN2020D-3 plastic, leadless thermal enhanced ultra thin small outline SOT1061D
package with side-wettable flanks (SWF); no leads; 3
terminals; 1.3 mm pitch; 2 mm x 2 mm x 0.65 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
F2
PBSS4310PAS-Q
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Product data sheet
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Nexperia
PBSS4310PAS-Q
10 V, 3 A NPN low VCEsat transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
10
Unit
V
collector-base voltage
open emitter
-
collector-emitter voltage open base
-
10
V
emitter-base voltage
collector current
open collector
-
8
V
-
3
A
ICM
peak collector current
base current
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
-
5
A
IB
-
500
560
1.1
1.54
175
175
175
mA
mW
W
Ptot
total power dissipation
[1]
[2]
[3]
-
-
-
W
Tj
junction temperature
ambient temperature
storage temperature
-
°C
°C
°C
Tamb
Tstg
-55
-65
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
aaa-034258
1.8
(1)
P
tot
(W)
1.2
(2)
(3)
0.6
0
-75
-25
25
75
125
175
(°C)
T
amb
(1) FR4 PCB, single-sided copper, 6 cm2
(2) FR4 PCB, single-sided copper, 1 cm2
(3) FR4 PCB, single-sided copper, standard footprint
Fig. 1. Power derating curves
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Product data sheet
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PBSS4310PAS-Q
10 V, 3 A NPN low VCEsat transistor
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
268
137
98
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
[3]
-
-
-
-
-
-
-
-
Rth(j-sp)
thermal resistance from
junction to solder point
7
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
aaa-034177
10
duty cycle = 1
Z
0.75
th(j-sp)
(K/W)
0.50
0.20
0.33
1
0.10
0.02
0.05
0.01
-1
-2
-3
10
10
10
0
-6
-5
-4
-3
10
-2
-1
10
10
10
10
10
t
(s)
p
Fig. 2. Transient thermal impedance from junction to solderpoint as a function of pulse duration; typical values
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Product data sheet
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Nexperia
PBSS4310PAS-Q
10 V, 3 A NPN low VCEsat transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)CBO
collector-base
IC = 100 µA; IE = 0 A
10
-
-
V
breakdown voltage
V(BR)CEO
V(BR)EBO
collector-emitter
breakdown voltage
IC = 10 mA; IB = 0 A
IE = 100 µA; IC = 0 A
10
8
-
-
-
-
V
V
emitter-base
breakdown voltage
(collector open)
ICBO
collector-base cut-off
current
VCB = 8 V; IE = 0 A; Tamb = 25 °C
VCB = 8 V; IE = 0 A; Tj = 125 °C
-
-
-
-
-
-
100
50
nA
µA
nA
ICES
IEBO
hFE
collector-emitter cut-off VCE = 8 V; VBE = 0 V; Tamb = 25 °C
current
100
emitter-base cut-off
current
VEB = 6.4 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
-
nA
DC current gain
VCE = 2 V; IC = 100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
325
VCE = 2 V; IC = 500 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
325
-
VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
300
-
VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
275
-
VCE = 2 V; IC = 3 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
250
-
VCEsat
collector-emitter
saturation voltage
IC = 500 mA; IB = 50 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
-
-
-
-
-
-
-
25
35
55
85
90
110
1
mV
mV
mV
mV
mV
mV
V
IC = 1 A; IB = 50 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 1 A; IB = 10 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 2 A; IB = 20 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 3 A; IB = 150 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 3 A; IB = 30 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
VBEsat
base-emitter saturation IC = 1 A; IB = 100 mA; pulsed; tp ≤
voltage
300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 3 A; IB = 300 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
1.2
845
V
VBEon
base-emitter turn-on
voltage
VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
mV
td
tr
delay time
IC = 2 A; IBon = 100 mA; IBoff = -100 mA;
Tamb = 25 °C
-
-
-
-
-
16
55
190
48
80
-
-
-
-
-
ns
rise time
ns
ts
tf
storage time
fall time
ns
ns
fT
transition frequency
VCE = 5 V; IC = 100 mA; f = 100 MHz;
Tamb = 25 °C
MHz
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PBSS4310PAS-Q
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Product data sheet
21 January 2022
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Nexperia
PBSS4310PAS-Q
10 V, 3 A NPN low VCEsat transistor
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C
-
75
-
pF
aaa-034138
aaa-034139
1000
6
I
B
= 17 mA
h
FE
15.3 mA
I
C
13.6 mA
(A)
800
600
400
200
0
(1)
11.9 mA
8.5 mA
(2)
(3)
10.2 mA
6.8 mA
4
2
0
(4)
5.1 mA
1.7 mA
(5)
(6)
3.4 mA
-1
2
3
4
10
1
10
10
10
10
(mA)
0
0.5
1.0
1.5
2.0
I
V
(V)
CE
C
VCE = 5 V
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 100 °C
(3) Tamb = 85 °C
(4) Tamb = 25 °C
(5) Tamb = −40 °C
(6) Tamb = −55 °C
Fig. 4. Collector current as a function of collector-
emitter voltage; typical values
Fig. 3. DC current gain as a function of collector
current; typical values
aaa-034140
aaa-034141
1.2
1.2
(1)
V
BEsat
(V)
(2)
V
BEsat
(V)
1.0
0.8
0.6
0.4
0.2
(3)
(4)
(1)
(2)
0.8
0.4
0
(3)
(4)
-1
10
2
3
4
-1
10
2
3
4
1
10
10
10
10
(mA)
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 10
(2) IC/IB = 20
(3) IC/IB = 50
(4) IC/IB = 100
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(4) Tamb = 150 °C
Fig. 5. Base-emitter saturation voltage as a function of Fig. 6. Base-emitter saturation voltage as a function of
collector current; typical values
collector current; typical values
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Product data sheet
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PBSS4310PAS-Q
10 V, 3 A NPN low VCEsat transistor
aaa-034142
aaa-034143
1
1
V
V
CEsat
(V)
CEsat
(V)
-1
-1
-2
-3
10
10
10
10
(1)
(2)
(3)
(1)
(2)
-2
10
10
(3)
(4)
-3
-1
10
2
3
4
-1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 20
(4) IC/IB = 10
(1) Tamb = 125 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig. 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-034144
aaa-034145
-1
3
10
10
R
CEsat
R
CEsat
2
10
-2
10
10
10
10
(1)
(2)
(3)
(4)
10
-3
-4
-5
1
(1)
(2)
(3)
-1
10
10
-2
-1
2
3
4
-1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 20
(4) IC/IB = 10
(1) Tamb = 125 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig. 9. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
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Product data sheet
21 January 2022
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Nexperia
PBSS4310PAS-Q
10 V, 3 A NPN low VCEsat transistor
aaa-034146
1.2
V
BE
(V)
(1)
(2)
0.8
(3)
(4)
0.4
0
-1
10
2
3
4
1
10
10
10
10
(mA)
I
C
VCE = 2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(4) Tamb = 150 °C
Fig. 11. Base-emitter voltage as a function of collector current; typical values
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Product data sheet
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PBSS4310PAS-Q
10 V, 3 A NPN low VCEsat transistor
11. Test information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig. 12. Switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
R2
V
I
DUT
R1
mlb826
Fig. 13. Test circuit for switching times
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
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PBSS4310PAS-Q
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Product data sheet
21 January 2022
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Nexperia
PBSS4310PAS-Q
10 V, 3 A NPN low VCEsat transistor
12. Package outline
DFN2020D-3: plastic thermal enhanced ultra thin small outline package; no leads;
3 terminals; body 2 x 2 x 0.65 mm
SOT1061D
X
v
A B
b
p
A
B
D
A
A
1
E
detail X
pin 1
index area
solderable lead
end, protrusion
max. 0.02 mm (3x)
C
pin 1
index area
y
1
y
e
C
1
2
L
p
visible depend upon
used manufacturing
technology (6x)
e
1
E
1
3
1
0
1
2 mm
D
scale
Dimensions (mm are the original dimensions)
(1)
Unit
A
A
b
D
D
1
E
E
e
e
L
v
y
y
1
1
p
1
1
p
max 0.65 0.04 0.35 2.1 1.6 2.1 1.1
mm nom 0.60
min 0.55
0.3 0.45
0.2 0.35
1.3
0.1 0.05 0.05
0.25 1.9 1.4 1.9 0.9
Note
1. Dimension A is including plating thickness
sot1061d_po
Issue date
References
Outline
version
IEC
European
projection
JEDEC
- - -
JEITA
14-03-12
15-01-09
SOT1061D
Fig. 14. Package outline DFN2020D-3 (SOT1061D)
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Product data sheet
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PBSS4310PAS-Q
10 V, 3 A NPN low VCEsat transistor
13. Soldering
Footprint information for reflow soldering of DFN2020D-3 package
SOT1061D
2.1
1.7
1.3
0.4 (2x)
0.3 (2x)
0.5 (2x)
0.5 (2x) 0.6 (2x) 0.7 (2x)
0.25
1.1
0.35
0.3
0.25
2.5 2.3
0.25
1
1.1 1.2
0.35
0.35
0.35
0.3
0.4
0.5
1.5
1.6
1.7
occupied area
solder resist
solder paste
solder lands
Dimensions in mm
14-03-05
14-03-12
Issue date
sot1061d_fr
Fig. 15. Reflow soldering footprint for DFN2020D-3 (SOT1061D)
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Product data sheet
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PBSS4310PAS-Q
10 V, 3 A NPN low VCEsat transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20220121
Data sheet status
Change notice
Supersedes
PBSS4310PAS-Q v.3
Modifications:
Product data sheet
-
PBSS4310PAS-Q v.1
•
Characteristics: Figure 8 corrected
PBSS4310PAS-Q v.2
PBSS4310PAS-Q v.1
20211215
20211203
Product data sheet
-
-
PBSS4310PAS-Q v.1
-
Preliminary data sheet
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PBSS4310PAS-Q
10 V, 3 A NPN low VCEsat transistor
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15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
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or warranty that such applications will be suitable for the specified use
without further testing or modification.
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data sheet
Development
This document contains data from
the objective specification for
product development.
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data sheet
Qualification
Production
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the preliminary specification.
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data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
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[2] The term 'short data sheet' is explained in section "Definitions".
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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©
PBSS4310PAS-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
21 January 2022
13 / 14
Nexperia
PBSS4310PAS-Q
10 V, 3 A NPN low VCEsat transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................5
11. Test information..........................................................9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information......................................................13
© Nexperia B.V. 2022. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 21 January 2022
©
PBSS4310PAS-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
21 January 2022
14 / 14
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