PBSS5130T [NEXPERIA]

30 V; 1 A PNP low VCEsat (BISS) transistorProduction;


型号：	PBSS5130T
厂家：	Nexperia
描述：	30 V; 1 A PNP low VCEsat (BISS) transistorProduction 开关光电二极管晶体管
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中文：	中文翻译
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Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

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Team Nexperia

PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

9 July 2013

Product data sheet

1. General description

PNP low V_CEsatBreakthrough In Small Signal (BISS) transistor in a small SOT23

Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

Small SMD plastic package

•

Low collector-emitter saturation voltage V_CEsat

High collector current capability: I_Cand I_CM

Higher efficiency due to less heat generation

AEC-Q101 qualified

3. Applications

DC-to-DC conversion

Supply line switching

Battery charger

LCD backlighting

•

Driver in low supply voltage applications (e.g. lamps and LEDs)

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-30

I_C

collector current

-1

I_CM

peak collector current single pulse; t_p≤ 1 ms

-3

R_CEsat

collector-emitter

I_C= -500 mA; I_B= -50 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

220

mΩ

saturation resistance

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NXP Semiconductors

PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

5. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

base

emitter

collector

sym132

TO-236AB (SOT23)

6. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PBSS5130T

TO-236AB

plastic surface-mounted package; 3 leads

SOT23

7. Marking

Table 4.

Marking codes

Type number

Marking code

[1]

PBSS5130T

%3E

[1] % = placeholder for manufacturing site code

PBSS5130T

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Product data sheet

9 July 2013

2 / 11

NXP Semiconductors

PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Conditions

open emitter

open base

Min

Max

-30

-5

Unit

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current

open collector

-1

I_CM

peak collector current

peak base current

total power dissipation

single pulse; t_p≤ 1 ms

T_amb≤ 25 °C

-3

I_BM

-300

300

480

150

°C

P_tot

[1]

[2]

T_j

junction temperature

ambient temperature

storage temperature

T_amb

T_stg

-55

-65

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².

9. Thermal characteristics

Table 6.

Symbol

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

417

260

Unit

K/W

R_th(j-a)

thermal resistance

from junction to

ambient

in free air

[1]

[2]

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².

PBSS5130T

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Product data sheet

9 July 2013

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NXP Semiconductors

PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

10. Characteristics

Table 7.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

-100

-50

Unit

I_CBO

collector-base cut-off

V_CB= -30 V; I_E= 0 A; T_amb= 25 °C

V_CB= -30 V; I_E= 0 A; T_j= 150 °C

V_EB= -4 V; I_C= 0 A; T_amb= 25 °C

current

µA

I_EBO

emitter-base cut-off

current

-100

h_FE

DC current gain

V_CE= -2 V; I_C= -100 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

300

450

V_CE= -2 V; I_C= -500 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

260

350

V_CE= -2 V; I_C= -1 A; pulsed;

210

290

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

V_CEsat

collector-emitter

I_C= -100 mA; I_B= -1 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

-100

-225

220

-1.1

-0.75

mΩ

saturation voltage

I_C= -1 A; I_B= -50 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

R_CEsat

V_BEsat

V_BEon

f_T

collector-emitter

I_C= -500 mA; I_B= -50 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

saturation resistance

base-emitter saturation I_C= -2 A; I_B= -200 mA; pulsed;

voltage

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

base-emitter turn-on

voltage

V_CE= -2 V; I_C= -100 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

transition frequency

V_CE= -10 V; I_C= -100 mA;

f = 100 MHz; T_amb= 25 °C

100

200

MHz

C_c

collector capacitance

V_CB= -10 V; I_E= 0 A; i_e= 0 A;

f = 1 MHz; T_amb= 25 °C

PBSS5130T

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Product data sheet

9 July 2013

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NXP Semiconductors

PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

aaa-006394

aaa-006395

1000

-1.0

(mA) = -3

(A)

-2.7

-2.4

-2.1

800

-0.8

(1)

-1.8

-1.5

600

400

200

-0.6

-0.4

-0.2

-1.2

-0.9

(2)

(3)

-0.6

-0.3

-1

-10

-1

-10

(mA)

-1

-2

-3

-4

-5

(V)

V_CE= -2 V

T_amb= 25 °C

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= -55 °C

Fig. 2. Collector current as a function of collector-

emitter voltage; typical values

Fig. 1. DC current gain as a function of collector

current; typical values

aaa-006396

aaa-006397

-1200

(mV)

BEsat

(mV)

(1)

(2)

(1)

(2)

-800

(3)

-400

(3)

-1

-10

-1

-10

-1

-10

(mA)

-1

-10

I (mA)

V_CE= -2 V

I_C/I_B= 20

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= -55 °C

(1) T_amb= -55 °C

(2) T_amb= 25 °C

(3) T_amb= 150 °C

Fig. 3. Base-emitter voltage as a function of collector Fig. 4. Base-emitter saturation voltage as a function of

current; typical values collector current; typical values

PBSS5130T

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Product data sheet

9 July 2013

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NXP Semiconductors

PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

aaa-006398

aaa-006406

-10

CEsat

(Ω)

(mV)

CEsat

(1)

(2)

-10

(3)

-10

(1)

(2)

(3)

-1

-10

-1

-10

(mA)

-10

-1

-10

I (mA)

I_C/I_B= 20

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= -55 °C

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= -55 °C

Fig. 5. Collector-emitter saturation voltage as a

function of collector current; typical values

Fig. 6. Collector-emitter saturation resistance as a

function of collector current; typical values

11. Test information

11.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

12. Package outline

3.0

2.8

1.1

0.9

0.45

0.15

2.5 1.4

2.1 1.2

0.48

0.38

0.15

0.09

1.9

Dimensions in mm

04-11-04

Fig. 7. Package outline TO-236AB (SOT23)

PBSS5130T

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Product data sheet

9 July 2013

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NXP Semiconductors

PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

13. Soldering

3.3

2.9

1.9

solder lands

solder resist

1.7

solder paste

occupied area

0.6

0.7

(3×)

Dimensions in mm

0.5

(3×)

0.6

(3×)

sot023_fr

Fig. 8. Reflow soldering footprint for TO-236AB (SOT23)

2.2

1.2

(2×)

1.4

(2×)

solder lands

solder resist

2.6

4.6

occupied area

Dimensions in mm

1.4

preferred transport direction during soldering

2.8

4.5

sot023_fw

Fig. 9. Wave soldering footprint for TO-236AB (SOT23)

PBSS5130T

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Product data sheet

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NXP Semiconductors

PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

14. Revision history

Table 8.

Revision history

Data sheet ID

PBSS5130T v.2

Modifications:

Release date

Data sheet status

Change notice

Supersedes

20130709

Product data sheet

PBSS5130T v.1

The format of this document has been redesigned to comply with the new identity guidelines

of NXP Semiconductors.

•

Legal texts have been adapted to the new company name where appropriate.

Sections "General description", "Features and benefits" and "Applications": updated

Section "Marking": updated

•

Table "Limiting values": ambient temperature T_ambupdated

Table "Characteristics": base-emitter saturation voltage V_BEsatadded

Figures 1 to 6: added

Section "Test information": added

Figure "Package outline TO-236AB (SOT23)": replaced by minimized outline drawing

Section "Soldering": added

Section "Legal information": updated

PBSS5130T v.1

20031212

Product data sheet

PBSS5130T

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Product data sheet

9 July 2013

8 / 11

NXP Semiconductors

PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation -

lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

15. Legal information

15.1 Data sheet status

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Document

Product

Definition

status [1][2] status [3]

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Right to make changes — NXP Semiconductors reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Suitability for use in automotive applications — This NXP

Semiconductors product has been qualified for use in automotive

applications. Unless otherwise agreed in writing, the product is not designed,

authorized or warranted to be suitable for use in life support, life-critical or

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Product

[short] data

sheet

Production

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nxp.com.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

15.2 Definitions

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

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Preview — The document is a preview version only. The document is still

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NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Customers are responsible for the design and operation of their

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Semiconductors accepts no liability for any assistance with applications or

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Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local NXP

Semiconductors sales office. In case of any inconsistency or conflict with the

short data sheet, the full data sheet shall prevail.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default

in the customer’s applications or products, or the application or use by

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is deemed to offer functions and qualities beyond those described in the

Product data sheet.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

15.3 Disclaimers

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

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applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

Limited warranty and liability — Information in this document is believed

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or completeness of such information and shall have no liability for the

consequences of use of such information. NXP Semiconductors takes no

responsibility for the content in this document if provided by an information

source outside of NXP Semiconductors.

PBSS5130T

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Product data sheet

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NXP Semiconductors

PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

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Translations — A non-English (translated) version of a document is for

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15.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

PBSS5130T

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Product data sheet

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NXP Semiconductors

PBSS5130T

30 V; 1 A PNP low VCEsat (BISS) transistor

16. Contents

General description ............................................... 1

Features and benefits ............................................1

Applications ........................................................... 1

Quick reference data ............................................. 1

Pinning information ...............................................2

Ordering information .............................................2

Marking ...................................................................2

Limiting values .......................................................3

Thermal characteristics .........................................3

Characteristics .......................................................4

Test information .....................................................6

11.1

Quality information ............................................... 6

Package outline ..................................................... 6

Soldering ................................................................ 7

Revision history .....................................................8

Legal information ...................................................9

Data sheet status ................................................. 9

Definitions .............................................................9

Disclaimers ...........................................................9

Trademarks ........................................................ 10

15.1

15.2

15.3

15.4

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 9 July 2013

PBSS5130T

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Product data sheet

9 July 2013

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PBSS5130T [NEXPERIA]

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