PBSS5140U [NEXPERIA]

40 V low VCEsat PNP transistorProduction;


型号：	PBSS5140U
厂家：	Nexperia
描述：	40 V low VCEsat PNP transistorProduction
文件：	总10页 (文件大小：477K)
中文：	中文翻译
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DISCRETE SEMICONDUCTORS

DATA SHEET

M3D102

PBSS5140U

40 V low V_CEsatPNP transistor

Product data sheet

2001 Jul 20

Supersedes data of 2001 Mar 27

NXP Semiconductors

Product data sheet

40 V low V_CEsatPNP transistor

PBSS5140U

FEATURES

QUICK REFERENCE DATA

• Low collector-emitter saturation voltage

• High current capability

SYMBOL

V_CEO

PARAMETER

MAX. UNIT

collector-emitter voltage

peak collector current

equivalent on-resistance

−40

−2

• Improved device reliability due to reduced heat

generation

I_CM

R_CEsat

<500

mΩ

• Enhanced performance over SOT23 1A standard

packaged transistor.

PINNING

DESCRIPTION

APPLICATIONS

base

• General purpose switching and muting

• LCD back lighting

emitter

collector

• Supply line switching circuits

• Battery driven equipment (mobile phones, video

cameras and hand-held devices).

handbook, halfpage

DESCRIPTION

PNP low V_CEsattransistor in a SOT323 (SC-70) plastic

package.

MARKING

TYPE NUMBER

PBSS5140U

MARKING CODE

Top view

MAM048

51t

Fig.1 Simplified outline (SOT323; SC-70) and

symbol.

2001 Jul 20

NXP Semiconductors

Product data sheet

40 V low V_CEsatPNP transistor

PBSS5140U

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

collector-base voltage

CONDITIONS

open emitter

MIN.

MAX.

−40

UNIT

V_CBO

V_CEO

V_EBO

I_C

−

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

peak base current

open base

−40

−5

open collector

−1

I_CM

−2

I_BM

−1

P_tot

total power dissipation

T_amb≤ 25 °C; note 1

T_amb≤ 25 °C; note 2

250

350

+150

150

+150

°C

T_stg

T_j

storage temperature

−65

−

junction temperature

°C

T_amb

operating ambient temperature

−65

°C

Notes

1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.

2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm².

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

in free air; note 1

in free air; note 2

VALUE

500

UNIT

K/W

R_{th j-a}

thermal resistance from junction to

ambient

357

Notes

1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.

2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm².

2001 Jul 20

NXP Semiconductors

Product data sheet

40 V low V_CEsatPNP transistor

PBSS5140U

CHARACTERISTICS

T_amb= 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

V_CB= −40 V; I_C= 0

MIN.

TYP. MAX. UNIT

I_CBO

collector-base cut-off current

−

−100

−50

−100

−

μA

V_CB= −40 V; I_C= 0; T_amb= 150 °C

V_CE= −30 V; I_B= 0

−

I_CEO

I_EBO

h_FE

collector-emitter cut-off current

emitter-base cut-off current

DC current gain

−

V_EB= −5 V; I_C= 0

−

V_CE= −5 V; I_C= −1 mA

V_CE= −5 V; I_C= −100 mA

V_CE= −5 V; I_C= −500 mA

V_CE= −5 V; I_C= −1 A

300

250

160

−

800

−

V_CEsat

saturation voltage

I_C= −100 mA; I_B= −1 mA

I_C= −500 mA; I_B= −50 mA

I_C= −1 A; I_B= −100 mA

I_C= −500 mA; I_B= −50 mA; note 1

I_C= −1 A; I_B= −50 mA

−

−200

−250

−500

<500

−1.1

−1

mΩ

−

R_CEsat

V_BEsat

V_BEon

f_T

equivalent on-resistance

base-emitter saturation voltage

base-emitter turn-on voltage

transition frequency

−

300

−

V_CE= −5 V; I_C= −1 A

−

I_C= −50 mA; V_CE= −10 V;

150

−

MHz

f = 100 MHz

C_c

collector capacitance

V_CB= −10 V; I_E= I_e= 0; f = 1 MHz

−

Note

1. Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

2001 Jul 20

NXP Semiconductors

Product data sheet

40 V low V_CEsatPNP transistor

PBSS5140U

MLD543

MLD544

1200

−10

handbook, halfpage

(V)

(1)

800

(1)

−1

(2)

(3)

400

(3)

−1

−10

−1

−10

(mA)

−1

−10

(mA)

V_CE= −5 V.

(1) T_amb= 150 °C.

(2) _amb= 25 °C.

(3) T_amb= −55 °C.

V_CE= −5 V.

(1) T_amb= −55 °C.

(2) _amb= 25 °C.

(3) T_amb= 150 °C.

Fig.2 DC current gain as a function of collector

current; typical values.

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

MLD545

MLD677

−10

handbook, halfpage

CEsat

(Ω)

(mV)

(1)

−10

(3)

(1)

(2)

−10

(3)

−1

−10

−1

−2

−3

−4

−1

−10

−1

−10

(mA)

I_C/I_B= 10.

(1) T_amb= 150 °C.

(2) T_amb= 25 °C.

(3) T_amb= −55 °C.

(1) T_amb= 150 °C.

(2) T_amb= 25 °C.

(3) T_amb= −55 °C.

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

Fig.5 Equivalent on-resistance as a function of

collector current; typical values.

2001 Jul 20

NXP Semiconductors

Product data sheet

40 V low V_CEsatPNP transistor

PBSS5140U

MLD678

300

handbook, halfpage

(MHz)

200

100

−200

−400

−600

−800

−1000

(mA)

V_CE= −10 V.

(1) T_amb= 150 °C.

(2) _amb= 25 °C.

(3) T_amb= −55 °C.

Fig.6 Transition frequency as a function of

collector current; typical values.

2001 Jul 20

NXP Semiconductors

Product data sheet

40 V low V_CEsatPNP transistor

PBSS5140U

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads

SOT323

v M

M B

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

max

UNIT

1.1

0.8

0.4

0.3

0.25

0.10

2.2

1.8

1.35

1.15

2.2

2.0

0.45

0.15

0.23

0.13

0.1

1.3

0.65

0.2

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

SOT323

SC-70

97-02-28

2001 Jul 20

NXP Semiconductors

Product data sheet

40 V low V_CEsatPNP transistor

PBSS5140U

DATA SHEET STATUS

DOCUMENT

STATUS⁽¹⁾

PRODUCT

STATUS⁽²⁾

DEFINITION

Objective data sheet

Development

This document contains data from the objective specification for product

development.

Preliminary data sheet

Product data sheet

Qualification

Production

This document contains data from the preliminary specification.

This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DISCLAIMERS

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequences of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this document, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any inconsistency or conflict between information

in this document and such terms and conditions, the latter

will prevail.

Suitability for use ⎯ NXP Semiconductors products are

not designed, authorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in personal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at

the customer’s own risk.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for acceptance or the grant, conveyance or

implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national authorities.

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use without further testing or modification.

Quick reference data ⎯ The Quick reference data is an

extract of the product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaustive or legally binding.

2001 Jul 20

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were

made to the content, except for the legal definitions and disclaimers.

Contact information

For additional information please visit: http://www.nxp.com

For sales offices addresses send e-mail to: salesaddresses@nxp.com

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

613514/02/pp9

Date of release: 2001 Jul 20

Document order number: 9397 750 08432

PBSS5140U [NEXPERIA]

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