PBSS5250T [NEXPERIA]

50 V; 2 A PNP low VCEsat (BISS) transistorProduction;


型号：	PBSS5250T
厂家：	Nexperia
描述：	50 V; 2 A PNP low VCEsat (BISS) transistorProduction
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中文：	中文翻译
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Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

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DISCRETE SEMICONDUCTORS

DATA SHEET

M3D088

PBSS5250T

50 V, 2 A

PNP low V_CEsat(BISS) transistor

Product data sheet

2003 Oct 09

NXP Semiconductors

Product data sheet

50 V, 2 A

PNP low V_CEsat(BISS) transistor

PBSS5250T

QUICK REFERENCE DATA

FEATURES

SYMBOL

V_CEO

I_C

PARAMETER

MAX. UNIT

• Low collector-emitter saturation voltage V_CEsat

• High collector current capability: I_Cand I_CM

• Higher efficiency leading to less heat generation

• Reduced printed-circuit board requirements

collector-emitter voltage

collector current (DC)

peak collector current

equivalent on-resistance

−50

−2

I_CM

−3

R_CEsat

150

mΩ

• Cost effective alternative to MOSFETs in specific

applications.

PINNING

DESCRIPTION

APPLICATIONS

base

• Power management

– DC/DC converters

– Supply line switching

– Battery charger

emitter

collector

– LCD backlighting

• Peripheral drivers

handbook, halfpage

– Driver in low supply voltage applications (e.g. lamps

and LEDs)

– Inductive load driver (e.g. relays, buzzers and motors).

DESCRIPTION

PNP BISS transistor in a SOT23 plastic package offering

ultra low V_CEsatand R_CEsatparameters.

Top view

MAM256

MARKING

TYPE NUMBER

PBSS5250T

MARKING CODE⁽¹⁾

Fig.1 Simplified outline (SOT23) and symbol.

3H*

Note

1. * = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

ORDERING INFORMATION

PACKAGE

DESCRIPTION

plastic surface mounted package; 3 leads

TYPE NUMBER

NAME

VERSION

PBSS5250T

−

SOT23

2003 Oct 09

NXP Semiconductors

Product data sheet

50 V, 2 A

PNP low V_CEsat(BISS) transistor

PBSS5250T

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

collector-base voltage

CONDITIONS

open emitter

MIN.

MAX.

−50

UNIT

V_CBO

V_CEO

V_EBO

I_C

−

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

base current (DC)

open base

−50

−5

open collector

−2

I_CM

single peak

−3

I_B

−300

300

480

150

+150

°C

P_tot

total power dissipation

T_amb≤ 25 °C; note 1

T_amb≤ 25 °C; note 2

−

T_j

junction temperature

T_amb

T_stg

operating ambient temperature

storage temperature

−65

°C

Notes

1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.

2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm².

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

in free air; note 1

in free air; note 2

VALUE

417

UNIT

K/W

R_{th j-a}

thermal resistance from junction to ambient

260

Notes

1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.

2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm².

2003 Oct 09

NXP Semiconductors

Product data sheet

50 V, 2 A

PNP low V_CEsat(BISS) transistor

PBSS5250T

CHARACTERISTICS

T_j= 25 °C; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

V_CB= −50 V; I_E= 0

MIN.

TYP. MAX. UNIT

I_CBO

collector cut-off current

−

−100

−50

−100

−

μA

V_CB= −50 V; I_E= 0; T_j= 150 °C

V_EB= −5 V; I_C= 0

−

I_EBO

h_FE

emitter cut-off current

DC current gain

−

V_CE= −2 V; I_C= 0.5 A

200

130

−

V_CE= −2 V; I_C= 1 A; note 1

V_CE= −2 V; I_C= 2 A; note 1

I_C= −0.5 A; I_B= −50 mA

I_C= −1 A; I_B= −50 mA

−

V_CEsat

collector-emitter saturation

voltage

−90

−180

−300

150

−1.1

−

mΩ

−

I_C= −2 A; I_B= −100 mA

I_C= −2 A; I_B= −200 mA; note 1

−

R_CEsat

V_BEsat

V_BEon

f_T

equivalent on-resistance

−

base-emitter saturation voltage I_C= −2 A; I_B= −100 mA; note 1

−

base-emitter turn-on voltage

transition frequency

V_CE= −2 V; I_C= −1 A; note 1

−1.2

100

I_C= −100 mA; V_CE= −5 V;

−

MHz

f = 100 MHz

C_c

collector capacitance

V_CB= −10 V; I_E= I_e= 0; f = 1 MHz

−

Note

1. Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

2003 Oct 09

NXP Semiconductors

Product data sheet

50 V, 2 A

PNP low V_CEsat(BISS) transistor

PBSS5250T

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads

SOT23

w M

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

max.

1.1

0.9

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

2.5

2.1

0.45

0.15

0.55

0.45

0.1

1.9

0.95

0.2

0.1

REFERENCES

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

JEDEC

EIAJ

97-02-28

99-09-13

SOT23

TO-236AB

2003 Oct 09

NXP Semiconductors

Product data sheet

50 V, 2 A

PNP low V_CEsat(BISS) transistor

PBSS5250T

DATA SHEET STATUS

DOCUMENT

STATUS⁽¹⁾

PRODUCT

STATUS⁽²⁾

DEFINITION

Objective data sheet

Development

This document contains data from the objective specification for product

development.

Preliminary data sheet

Product data sheet

Qualification

Production

This document contains data from the preliminary specification.

This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DISCLAIMERS

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequences of use of such information.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any inconsistency or conflict between information

in this document and such terms and conditions, the latter

will prevail.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this document, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

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may be interpreted or construed as an offer to sell products

that is open for acceptance or the grant, conveyance or

implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Suitability for use ⎯ NXP Semiconductors products are

not designed, authorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in personal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at

the customer’s own risk.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national authorities.

Quick reference data ⎯ The Quick reference data is an

extract of the product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaustive or legally binding.

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

2003 Oct 09

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were

made to the content, except for the legal definitions and disclaimers.

Contact information

For additional information please visit: http://www.nxp.com

For sales offices addresses send e-mail to: salesaddresses@nxp.com

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

R75/01/pp7

Date of release: 2003 Oct 09

Document order number: 9397 750 11904

PBSS5250T [NEXPERIA]

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