PBSS5330PAS [NEXPERIA]
30 V, 3 A PNP low VCEsat (BISS) transistorProduction;
| 型号： | PBSS5330PAS |
| 厂家： | 
Nexperia |
| 描述： | 30 V, 3 A PNP low VCEsat (BISS) transistorProduction 开关 光电二极管 晶体管 |
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PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
11 September 2014
Product data sheet
1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic
package with medium power capability and visible and soldarable side pads.
NPN complement: PBSS4330PAS
2. Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
•
•
•
•
•
•
•
•
•
•
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
High temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) area requirements
Leadless small SMD plastic package with soldarable side pads
Exposed heat sink for excellent thermal and electrical conductivity
Suitable for Automatic Optical Inspection (AOI) of solder joint
AEC-Q101 qualified
3. Applications
Loadswitch
•
•
•
•
•
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
-30
V
IC
collector current
-
-
-
-
-3
A
ICM
peak collector current single pulse; tp ≤ 1 ms
-
-5
A
RCEsat
collector-emitter
IC = -3 A; IB = -300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
75
107
mΩ
saturation resistance
Nexperia
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
3
1
2
3
B
E
C
base
3
emitter
collector
1
2
sym013
1
2
Transparent top view
DFN2020D-3 (SOT1061D)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSS5330PAS
DFN2020D-3 DFN2020D-3: plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 2 x 2 x 0.65 mm
SOT1061D
7. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS5330PAS
E2
©
PBSS5330PAS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 September 2014
2 / 18
Nexperia
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
-30
-30
-6
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
-
-
V
open collector
-
V
-
-3
A
ICM
peak collector current
base current
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
-
-5
A
IB
-
-500
600
1.2
1.5
2.5
175
175
175
mA
mW
W
Ptot
total power dissipation
[1]
-
[2][3]
[4]
-
-
W
[5][6]
-
W
Tj
junction temperature
ambient temperature
storage temperature
-
°C
°C
°C
Tamb
Tstg
-55
-65
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4]
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm2.
[5]
[6] Device mounted on a ceramic PCB, Al2O3, standard footprint.
©
PBSS5330PAS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 September 2014
3 / 18
Nexperia
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
aaa-013298
3
2
1
0
(1) + (2)
P
tot
(W)
(3)
(4) + (5)
(6)
-75
25
125
225
T
(°C)
amb
(1) Ceramic PCB, single-sided copper, standard footprint
(2) FR4 PCB, 4-layer copper, 1 cm2
(3) FR4 PCB, single-sided copper, 6 cm2
(4) FR4 PCB, single-sided copper, 1 cm2
(5) FR4 PCB, 4-layer copper, standard footprint
(6) FR4 PCB, single-sided copper, standard footprint
Fig. 1. Power derating curves
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
250
125
100
60
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
-
-
-
-
-
-
-
-
[2][3]
[4]
[5][6]
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4]
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm2.
[6]
©
PBSS5330PAS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 September 2014
4 / 18
Nexperia
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
006aab979
3
10
Z
th(j-a)
duty cycle = 1
(K/W)
0.75
0.5
0.33
2
10
0.2
0.1
0.05
10
0.02
0.01
1
0
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab980
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1 cm2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS5330PAS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 September 2014
5 / 18
Nexperia
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
006aac000
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
10
0.1
0.05
1
0.02
0
0.01
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm2
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-013299
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.50
0.33
0.20
0.10
0.05
10
0.02
0.01
0
1
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, 4-layer copper, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS5330PAS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 September 2014
6 / 18
Nexperia
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
aaa-013300
2
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.50
0.20
0.33
10
0.10
0.02
0.05
0.01
0
1
-1
10
-5
-4
10
-3
-2
-1
10
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab982
2
10
duty cycle = 1
Z
0.75
0.33
th(j-a)
(K/W)
0.5
0.2
10
0.1
0.02
0
0.05
0.01
1
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
Ceramic PCB, Al2O3, standard footprint
Fig. 7. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS5330PAS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 September 2014
7 / 18
Nexperia
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
-100
-50
Unit
nA
ICBO
collector-base cut-off
current
VCB = -24 V; IE = 0 A; Tamb = 25 °C
VCB = -24 V; IE = 0 A; Tj = 150 °C
-
-
-
-
-
-
µA
ICES
IEBO
hFE
collector-emitter cut-off VCE = -24 V; VBE = 0 V; Tamb = 25 °C
current
-100
nA
emitter-base cut-off
current
VEB = -5 V; IC = 0 A; Tamb = 25 °C
-
-
-100
-
nA
DC current gain
VCE = -2 V; IC = -0.5 A; pulsed;
200
320
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = -2 V; IC = -1 A; pulsed;
175
280
210
160
-45
450
-
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = -2 V; IC = -2 A; pulsed;
140
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = -2 V; IC = -3 A; pulsed;
100
-
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCEsat
collector-emitter
IC = -0.5 A; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
-
-70
-130
-240
mV
mV
mV
saturation voltage
IC = -1 A; IB = -50 mA; pulsed;
-90
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = -2 A; IB = -100 mA; pulsed;
-170
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = -3 A; IB = -300 mA; pulsed;
-
-
-230
75
-320
107
mV
mΩ
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
RCEsat
collector-emitter
saturation resistance
VBEsat
base-emitter saturation IC = -2 A; IB = -100 mA; pulsed;
-
-
-
-0.89 -1.1
-0.97 -1.2
-0.75 -1
V
V
V
voltage
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = -3 A; IB = -300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VBEon
base-emitter turn-on
voltage
VCE = -2 V; IC = -1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
td
tr
delay time
rise time
VCC = -9 V; IC = -2 A; IBon = -0.1 A;
IBoff = 0.1 A; Tamb = 25 °C
-
-
-
-
-
-
11
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
59
ton
ts
turn-on time
storage time
fall time
70
165
35
tf
toff
turn-off time
200
©
PBSS5330PAS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 September 2014
8 / 18
Nexperia
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fT
transition frequency
VCE = -5 V; IC = -100 mA; f = 100 MHz;
Tamb = 25 °C
100
165
-
MHz
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
38
45
pF
006aac036
006aac037
800
- 5
I
(mA) = - 53
B
I
C
(A)
- 47.7
- 37.1
h
FE
- 42.4
- 31.8
- 4
(1)
(2)
600
- 26.5
- 15.9
- 21.2
- 10.6
- 3
- 2
400
(3)
- 5.3
200
0
- 1
0
- 1
2
- 10
3
4
- 10
- 1
- 10
- 10
- 10
(mA)
0
- 0.4
- 0.8
- 1.2
- 1.6
- 2.0
(V)
I
V
C
CE
VCE = −2 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 9. Collector current as a function of collector-
emitter voltage; typical values
Fig. 8. DC current gain as a function of collector
current; typical values
©
PBSS5330PAS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 September 2014
9 / 18
Nexperia
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
006aac038
006aac039
- 1.2
- 1.4
V
V
(V)
BEsat
(V)
BE
(1)
(2)
- 0.8
- 1.0
(1)
(2)
(3)
(3)
- 0.4
- 0.6
- 0.2
0
- 10
- 1
2
- 10
3
4
- 1
2
3
4
- 1
- 10
- 10
- 10
- 10
- 1
- 10
- 10
- 10
- 10
I (mA)
C
I
(mA)
C
VCE = −2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 10. Base-emitter voltage as a function of collector Fig. 11. Base-emitter saturation voltage as a function of
current; typical values collector current; typical values
006aac040
006aac041
- 1
- 1
V
V
CEsat
(V)
CEsat
(V)
- 1
- 1
- 10
- 10
(1)
(2)
(1)
(2)
(3)
- 2
- 2
- 10
- 10
(3)
- 3
- 10
- 3
- 10
- 10
- 1
- 10
2
3
4
- 1
2
3
4
- 1
- 10
- 10
- 10
- 10
- 1
- 10
- 10
- 10
- 10
I
(mA)
I (mA)
C
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 12. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 13. Collector-emitter saturation voltage as a
function of collector current; typical values
©
PBSS5330PAS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 September 2014
10 / 18
Nexperia
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
006aac042
006aac043
2
3
10
10
R
CEsat
(Ω)
R
CEsat
(Ω)
2
10
10
10
(1)
(2)
(3)
1
1
- 1
10
(1)
(2)
- 1
(3)
10
- 2
- 2
10
10
- 1
2
3
4
- 1
2
3
4
- 10
- 1
- 10
- 10
- 10
- 10
(mA)
- 10
- 1
- 10
- 10
- 10
- 10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 14. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig. 15. Collector-emitter saturation resistance as a
function of collector current; typical values
©
PBSS5330PAS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 September 2014
11 / 18
Nexperia
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
11. Test information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig. 16. BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
450 Ω
(probe)
oscilloscope
450 Ω
oscilloscope
R2
V
DUT
I
R1
mlb826
Fig. 17. Test circuit for switching times
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
©
PBSS5330PAS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 September 2014
12 / 18
Nexperia
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
12. Package outline
DFN2020D-3: plastic thermal enhanced ultra thin small outline package; no leads;
3 terminals; body 2 x 2 x 0.65 mm
SOT1061D
X
v
A B
b
p
A
B
D
A
A
1
E
detail X
pin 1
index area
solderable lead
end, protrusion
max. 0.02 mm (3x)
C
pin 1
index area
y
1
y
e
C
1
2
L
p
visible depend upon
used manufacturing
technology (6x)
e
1
E
1
3
1
0
1
2 mm
D
scale
Dimensions (mm are the original dimensions)
(1)
Unit
A
A
b
D
D
1
E
E
e
e
1
L
p
v
y
y
1
1
p
1
max 0.65 0.04 0.35 2.1 1.6 2.1
mm nom
min
1.1
0.9
0.3 0.45
0.2 0.35
1.3
0.1 0.05 0.05
0.25 1.9 1.4 1.9
Note
1. Dimension A is including plating thickness
sot1061d_po
References
Outline
version
IEC
European
projection
Issue date
JEDEC
- - -
JEITA
14-03-11
14-03-12
SOT1061D
Fig. 18. Package outline DFN2020D-3 (SOT1061D)
©
PBSS5330PAS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 September 2014
13 / 18
Nexperia
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
13. Soldering
Footprint information for reflow soldering of DFN2020D-3 package
SOT1061D
2.1
1.7
1.3
0.4 (2x)
0.3 (2x)
0.5 (2x)
0.5 (2x) 0.6 (2x) 0.7 (2x)
0.25
1.1
0.35
0.3
0.25
2.5 2.3
0.25
1
1.1 1.2
0.35
0.35
0.35
0.3
0.4
0.5
1.5
1.6
1.7
occupied area
solder resist
solder paste
solder lands
Dimensions in mm
14-03-05
14-03-12
Issue date
sot1061d_fr
Fig. 19. Reflow soldering footprint for DFN2020D-3 (SOT1061D)
©
PBSS5330PAS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 September 2014
14 / 18
Nexperia
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PBSS5330PAS v.1
20140911
Product data sheet
-
-
©
PBSS5330PAS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 September 2014
15 / 18
Nexperia
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use in automotive applications — This Nexperia
product has been qualified for use in automotive
Product
[short] data
sheet
Production
This document contains the product
specification.
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
15.2 Definitions
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
short data sheet, the full data sheet shall prevail.
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
15.3 Disclaimers
Terms and conditions of commercial sale — Nexperia
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
©
PBSS5330PAS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 September 2014
16 / 18
Nexperia
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PBSS5330PAS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 September 2014
17 / 18
Nexperia
PBSS5330PAS
30 V, 3 A PNP low VCEsat (BISS) transistor
16. Contents
1
2
3
4
5
6
7
8
9
10
General description ............................................... 1
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................3
Thermal characteristics .........................................4
Characteristics .......................................................8
11
Test information ...................................................12
11.1
Quality information ............................................. 12
12
13
14
Package outline ................................................... 13
Soldering .............................................................. 14
Revision history ...................................................15
15
Legal information .................................................16
Data sheet status ............................................... 16
Definitions ...........................................................16
Disclaimers .........................................................16
Trademarks ........................................................ 17
15.1
15.2
15.3
15.4
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 11 September 2014
©
PBSS5330PAS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 September 2014
18 / 18
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