PBSS5330X [NEXPERIA]
30 V, 3 A PNP low VCEsat (BISS) transistorProduction;
| 型号： | PBSS5330X |
| 厂家： | 
Nexperia |
| 描述： | 30 V, 3 A PNP low VCEsat (BISS) transistorProduction 开关 晶体管 |
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PBSS5330X
30 V, 3 A
PNP low VCEsat (BISS) transistor
Product data sheet
2004 Nov 03
Supersedes data of 2003 Nov 28
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
FEATURES
QUICK REFERENCE DATA
• SOT89 (SC-62) package
SYMBOL
VCEO
IC
PARAMETER
MAX. UNIT
• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements.
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
−30
−3
V
A
ICM
−5
A
RCEsat
107
mΩ
APPLICATIONS
PINNING
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
PIN
1
DESCRIPTION
emitter
collector
base
2
3
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications
(e.g. lamps and LEDs)
2
1
– Inductive load driver (e.g. relays, buzzers
and motors).
3
DESCRIPTION
sym079
PNP low VCEsat transistor in a SOT89 plastic package.
3
2
1
MARKING
TYPE NUMBER
PBSS5330X
Note
MARKING CODE(1)
*1S
Fig.1 Simplified outline (SOT89) and symbol.
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
ORDERING INFORMATION
PACKAGE
DESCRIPTION
TYPE NUMBER
NAME
VERSION
SOT89
PBSS5330X
SC-62
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
2004 Nov 03
2
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−30
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
V
V
V
A
A
A
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
open base
−30
−6
open collector
note 4
−3
ICM
limited by Tj(max)
−5
IB
−0.5
Ptot
total power dissipation
Tamb ≤ 25 °C
note 1
−
−
−
−
550
1
mW
W
note 2
note 3
1.4
W
note 4
1.6
W
Tstg
Tj
storage temperature
junction temperature
ambient temperature
−65
−
+150
150
+150
°C
°C
°C
Tamb
−65
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2.
4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
2004 Nov 03
3
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
MLE372
2
handbook, halfpage
P
tot
(W)
(1)
1.6
(2)
1.2
(3)
0.8
(4)
0.4
0
0
40
80
120
160
(°C)
T
amb
(1) Ceramic PCB; 7 cm2 mounting pad for collector.
(2) FR4 PCB; 6 cm2 copper mounting pad for collector.
(3) FR4 PCB; 1 cm2 copper mounting pad for collector.
(4) Standard footprint.
Fig.2 Power derating curves.
2004 Nov 03
4
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
in free air
note 1
note 2
note 3
note 4
225
125
90
K/W
K/W
K/W
K/W
K/W
80
Rth(j-s)
thermal resistance from junction to soldering point
16
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2.
4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated.
006aaa243
3
10
Z
duty cycle =
1.00
th(j-a)
(K/W)
0.75
0.50
0.33
0.20
2
10
0.10
0.05
10
0.02
0.01
1
0
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; standard footprint.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 03
5
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
006aaa244
3
10
Z
th(j-a)
(K/W)
duty cycle =
1.00
2
10
0.75
0.50
0.33
0.20
0.10
10
0.05
0.02
0.01
1
0
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
006aaa245
3
10
Z
th(j-a)
(K/W)
duty cycle =
1.00
2
10
0.75
0.50
0.33
0.20
0.10
10
0.05
0.02
0.01
1
0
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 03
6
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCB = −30 V; IE = 0 A
VCB = −30 V; IE = 0 A; Tj = 150 °C
collector-emitter cut-off current VCE = −30 V; VBE = 0 V
MIN.
TYP. MAX. UNIT
ICBO
collector-base cut-off current
−
−
−
−
−
−100
−50
nA
μA
nA
nA
−
−
−
ICES
IEBO
hFE
−100
−100
emitter-base cut-off current
DC current gain
VEB = −5 V; IC = 0 A
VCE = −2 V
IC = −0.1 A
200
200
175
140
100
−
−
−
−
−
−
−
−
−
−
80
−
−
−
−
−
IC = −0.5 A
−
IC = −1 A; note 1
450
−
IC = −2 A; note 1
IC = −3 A; note 1
−
VCEsat
collector-emitter saturation
voltage
IC = −0.5 A; IB = −50 mA
IC = −1 A; IB = −50 mA
IC = −2 A; IB = −100 mA
IC = −3 A; IB = −300 mA; note 1
IC = −3 A; IB = −300 mA; note 1
−70
−130
−240
−320
107
−1.1
−1.2
−
mV
mV
mV
mV
mΩ
V
−
−
−
RCEsat
VBEsat
equivalent on-resistance
−
base-emitter saturation voltage IC = −2 A; IB = −100 mA
IC = −3 A; IB = −300 mA; note 1
−
−
V
VBEon
fT
base-emitter turn-on voltage
transition frequency
VCE = −2 V; IC = −1 A
−1.0
100
V
IC = −100 mA; VCE = −5 V;
−
MHz
f = 100 MHz
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A; f = 1 MHz
−
−
45
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Nov 03
7
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
MDB910
MDB909
800
−1.2
handbook, halfpage
handbook, halfpage
h
FE
V
BE
(V)
(1)
600
(1)
(2)
−0.8
(2)
400
(3)
−0.4
(3)
200
0
−10
0
−10
−1
2
3
4
−1
2
3
4
−1
−10
−10
−10
−10
(mA)
−1
−10
−10
−10
−10
(mA)
I
I
C
C
VCE = −2 V.
VCE = −2 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3)
T
amb = −55 °C.
(3) Tamb = 100 °C.
Fig.6 DC current gain as a function of collector
current; typical values.
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
MDB908
MDB907
−1
−1
handbook, halfpage
handbook, halfpage
V
V
CEsat
(V)
CEsat
(V)
−1
−1
−10
−10
(1)
(2)
(1)
(2)
(3)
−2
−2
−10
−10
(3)
−3
−10
−3
−10
−10
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
I
−10
(mA)
−1
−10
−10
−10
I
−10
(mA)
C
C
IC/IB = 20.
Tamb = 25 °C.
(1) IC/IB = 100.
(2) IC/IB = 50.
(3) IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3)
Tamb = −55 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Nov 03
8
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
MDB912
MDB911
−1.4
−5
(1)
(2)
(3)
(4)
handbook, halfpage
handbook, halfpage
I
C
(A)
V
BEsat
(V)
−4
(5)
(6)
−1.0
(7)
(8)
−3
−2
(1)
(9)
(2)
−0.6
(3)
(10)
−1
−0.2
−10
0
0
−1
2
3
4
−1
−10
−10
−10
−10
(mA)
−0.4
−0.8
−1.2
−1.6
−2.0
(V)
I
V
C
CE
IC/IB = 20.
(1) amb = −55 °C.
Tamb = 25 °C.
(4)
I
B = 37.1 mA.
(8) IB = 15.9 mA.
T
(1) IB = 53.0 mA.
(2) IB = 47.7 mA.
(3) IB = 42.4 mA.
(5) IB = 31.8 mA.
(6) IB = 26.5 mA.
(7) IB = 21.2 mA.
(9) IB = 10.6 mA.
(10) IB = 5.3 mA.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.10 Base-emitter saturation voltage as a
Fig.11 Collector current as a function of
collector-emitter voltage; typical values.
function of collector current; typical values.
MDB913
MDB914
2
3
10
10
handbook, halfpage
handbook, halfpage
R
CEsat
R
CEsat
(Ω)
(Ω)
2
10
10
10
1
1
(1)
(3)
(1)
(2)
(2)
−1
10
−1
10
(3)
−2
−2
10
10
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
(mA)
I
I
C
C
Tamb = 25 °C.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) IC/IB = 10.
(2) IC/IB = 5.
(3) IC/IB = 1.
Fig.12 Equivalent on-resistance as a function of
collector current; typical values.
Fig.13 Equivalent on-resistance as a function of
collector current; typical values.
2004 Nov 03
9
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
p3
E
H
E
L
p
1
2
3
c
b
p2
w
M
b
p1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
b
c
D
E
e
e
H
E
L
p
w
p1
p2
p3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
4.25
3.75
1.2
0.8
mm
3.0
1.5
0.13
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-08-03
06-03-16
SOT89
TO-243
SC-62
2004 Nov 03
10
NXP Semiconductors
Product data sheet
30 V, 3 A
PNP low VCEsat (BISS) transistor
PBSS5330X
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Nov 03
11
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/03/pp12
Date of release: 2004 Nov 03
Document order number: 9397 750 13888
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