PBSS5350D-Q [NEXPERIA]

50 V, 3 A PNP low VCEsat transistorProduction;


型号：	PBSS5350D-Q
厂家：	Nexperia
描述：	50 V, 3 A PNP low VCEsat transistorProduction
文件：	总9页 (文件大小：214K)
中文：	中文翻译
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PBSS5350D-Q

50 V, 3 A PNP low VCEsat transistor

10 May 2022

Product data sheet

1. General description

PNP low V_CEsattransistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic

package.

NPN complement: PBSS4350D-Q

2. Features and benefits

•

Low collector-emitter saturation voltage V_CEsat

•

High current capability

High efficiency due to less heat generation

Smaller Printed-Circuit Board (PCB) area than for conventional transistors

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Supply line switching circuits

Battery management applications

DC-to-DC conversion

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-50

I_C

collector current

-3

I_CM

peak collector current

-5

R_CEsat

collector-emitter

saturation resistance

I_C= -2 A; I_B= -200 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

120

150

mΩ

5. Pinning information

Table 2. Pinning information

Symbol

Description

collector

base

Simplified outline

Graphic symbol

1, 2, 5, 6

emitter

collector

SC-74; TSOP6 (SOT457)

sym030

Nexperia

PBSS5350D-Q

50 V, 3 A PNP low VCEsat transistor

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

PBSS5350D-Q

SC-74; TSOP6 plastic, surface-mounted package (SC-74; TSOP6); 6

leads

SOT457

7. Marking

Table 4. Marking codes

Type number

Marking code

PBSS5350D-Q

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-60

-50

-6

collector-emitter voltage open base

emitter-base voltage

collector current

open collector

-3

I_CM

peak collector current

peak base current

total power dissipation

-5

I_BM

-1

P_tot

T_amb≤ 25 °C

[1]

[2]

[3]

600

750

1200

150

°C

T_j

junction temperature

ambient temperature

storage temperature

T_amb

T_stg

-65

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for collector 1 cm².

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm².

[3] Device mounted on an FR4 4-layer PCB.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

208

160

100

Unit

K/W

R_th(j-a)

thermal resistance from in free air

junction to ambient

[1]

[2]

pulsed; t_p≤ 50 ms; δ ≤ 0.5.; in free air

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm².

PBSS5350D-Q

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Product data sheet

10 May 2022

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Nexperia

PBSS5350D-Q

50 V, 3 A PNP low VCEsat transistor

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

-100

-50

Unit

I_CBO

collector-base cut-off

current

V_CB= -50 V; I_E= 0 A; T_amb= 25 °C

V_CB= -50 V; I_E= 0 A; T_j= 150 °C

V_EB= -5 V; I_C= 0 A; T_amb= 25 °C

µA

I_EBO

h_FE

emitter-base cut-off

current

-100

DC current gain

V_CE= -2 V; I_C= -500 mA; T_amb= 25 °C

200

V_CE= -2 V; I_C= -1 A; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

V_CE= -2 V; I_C= -2 A; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

100

V_CEsat

collector-emitter

saturation voltage

I_C= -500 mA; I_B= -50 mA; T_amb= 25 °C

I_C= -1 A; I_B= -50 mA; T_amb= 25 °C

-100

-180

-300

150

mΩ

I_C= -2 A; I_B= -200 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

R_CEsat

V_BEsat

V_BEon

f_T

collector-emitter

saturation resistance

120

base-emitter saturation

voltage

-1.2

-1.1

base-emitter turn-on

voltage

V_CE= -2 V; I_C= -1 A; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

transition frequency

V_CE= -5 V; I_C= -100 mA; f = 100 MHz;

T_amb= 25 °C

100

MHz

C_c

collector capacitance

V_CB= -10 V; I_E= 0 A; i_e= 0 A;

f = 1 MHz; T_amb= 25 °C

006aac605

mgw167

1000

-1000

(nA) = -3.96

-3.63

(mA)

-3.30

-2.64

-800

800

-2.97

-2.31

(1)

-600

-400

-200

600

400

200

-1.98

-1.32

-1.65

-0.99

(2)

(3)

-0.66

-0.8

-0.33

- 1

- 10

- 1

- 10

(mA)

0.0

-0.4

-1.2

-1.6

-2.0

(V)

V_CE= -2 V

T_amb= 25 °C

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= -55 °C

Fig. 2. Collector current as a function of collector-

emitter voltage; typical values

Fig. 1. DC current gain as a function of collector

current; typical values

PBSS5350D-Q

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Product data sheet

10 May 2022

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Nexperia

PBSS5350D-Q

50 V, 3 A PNP low VCEsat transistor

006aac606

mgw168

- 5

- 1.2

(mA) = -250

-225

-175

(A)

-200

(V)

-125

-75

- 4

-150

-100

(1)

(2)

- 0.8

- 0.4

- 3

- 2

- 1

-50

-25

(3)

- 1

- 10

- 1

- 10

(mA)

0.0

-0.4

-0.8

-1.2

-1.6

-2.0

(V)

T_amb= 25 °C

V_CE= -2 V

(1) T_amb= -55 °C

(2) T_amb= 25 °C

(3) T_amb= 150 °C

Fig. 3. Collector current as a function of collector-

emitter voltage; typical values

Fig. 4. Base-emitter voltage as a function of collector

current; typical values

mgw170

mgw169

- 1.4

- 10

BEsat

(V)

(mV)

CEsat

- 1.2

- 1.0

- 0.8

- 0.6

- 0.4

- 0.2

- 10

(1)

(3)

(1)

(2)

- 10

(3)

- 1

- 10

- 1

- 10

- 1

- 10

(mA)

- 1

- 10

(mA)

I_C/I_B= 10

(1) T_amb= -55 °C

(2) T_amb= 25 °C

(3) T_amb= 150 °C

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= -55 °C

Fig. 5. Base-emitter saturation voltage as a function of Fig. 6. Collector-emitter saturation voltage as a

collector current; typical values

function of collector current; typical values

PBSS5350D-Q

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Product data sheet

10 May 2022

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Nexperia

PBSS5350D-Q

50 V, 3 A PNP low VCEsat transistor

mgu390

CEsat

(Ω)

(1)

(2)

(3)

- 1

- 10

(mA)

- 10

I_C/I_B= 20

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= -55 °C

Fig. 7. Collector-emitter saturation resistance as a function of collector current; typical values

11. Test information

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

12. Package outline

3.1

2.7

1.1

0.9

0.6

0.2

3.0

2.5 1.3

1.7

pin 1 index

0.26

0.10

0.40

0.25

0.95

1.9

Dimensions in mm

18-03-11

Fig. 8. Package outline SC-74; TSOP6 (SOT457)

PBSS5350D-Q

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Product data sheet

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PBSS5350D-Q

50 V, 3 A PNP low VCEsat transistor

13. Soldering

3.45

1.95

0.55

(6×)

solder lands

solder resist

0.45

(6×)

0.95

3.3 2.825

solder paste

occupied area

0.7

Dimensions in mm

(6×)

0.8

(6×)

2.4

sot457_fr

Fig. 9. Reflow soldering footprint for SC-74; TSOP6 (SOT457)

5.3

1.5

(4×)

solder lands

1.475

5.05

solder resist

occupied area

0.45

(2×)

1.475

Dimensions in mm

preferred transport

direction during soldering

1.45

(6×)

2.85

sot457_fw

Fig. 10. Wave soldering footprint for SC-74; TSOP6 (SOT457)

PBSS5350D-Q

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Product data sheet

10 May 2022

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Nexperia

PBSS5350D-Q

50 V, 3 A PNP low VCEsat transistor

14. Revision history

Table 8. Revision history

Data sheet ID

Release date

20220510

Data sheet status

Change notice

Supersedes

PBSS5350D-Q v.1

Product data sheet

PBSS5350D-Q

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Product data sheet

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Nexperia

PBSS5350D-Q

50 V, 3 A PNP low VCEsat transistor

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15. Legal information

Data sheet status

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

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[1][2]

status [3]

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Production

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data sheet

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PBSS5350D-Q

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Product data sheet

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PBSS5350D-Q

50 V, 3 A PNP low VCEsat transistor

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................1

6. Ordering information....................................................2

7. Marking..........................................................................2

8. Limiting values............................................................. 2

9. Thermal characteristics............................................... 2

10. Characteristics............................................................3

11. Test information..........................................................5

12. Package outline.......................................................... 5

13. Soldering..................................................................... 6

14. Revision history..........................................................7

15. Legal information........................................................8

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 10 May 2022

PBSS5350D-Q

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Product data sheet

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PBSS5350D-Q [NEXPERIA]

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