PBSS5520X [NEXPERIA]
20 V, 5 A PNP low VCEsat (BISS) transistorProduction;
| 型号： | PBSS5520X |
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Nexperia |
| 描述： | 20 V, 5 A PNP low VCEsat (BISS) transistorProduction |
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PBSS5520X
20 V, 5 A
PNP low VCEsat (BISS) transistor
Product data sheet
2004 Nov 08
Supersedes data of 2004 Jun 23
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
FEATURES
QUICK REFERENCE DATA
• High hFE and low VCEsat at high current operation
• High collector current IC: 5 A
SYMBOL
VCEO
IC
PARAMETER
MAX. UNIT
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
−20
−5
V
• High efficiency leading to less heat generation.
A
ICM
−10
54
A
APPLICATIONS
RCEsat
mΩ
• Medium power peripheral drivers (e.g. fans and motors)
PINNING
• Strobe flash units for digital still cameras and mobile
phones
PIN
1
DESCRIPTION
• Power switch for LAN and ADSL systems
• Medium power DC-to-DC conversion
• Battery chargers
emitter
collector
base
2
3
• Supply line switching.
DESCRIPTION
PNP low VCEsat (BISS) transistor in a SOT89 (SC-62)
plastic package.
NPN complement: PBSS4520X.
2
3
MARKING
1
TYPE NUMBER
PBSS5520X
MARKING CODE(1)
sym079
3
2
1
*1K
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
SOT89
PBSS5520X
SC-62
plastic surface mounted package; collector pad for
good heat transfer; 3 leads
2004 Nov 08
2
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−20
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
−
V
V
V
A
A
A
A
A
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
repetitive peak collector current
base current (DC)
open base
−20
−5
open collector
−5
ICM
tp ≤ 1 ms
−10
−6.5
−1
ICRP
IB
notes 1 and 2
IBM
peak base current
tp ≤ 1 ms
Tamb ≤ 25 °C
notes 1 and 2
note 2
−2
Ptot
total power dissipation
−
−
−
−
−
2.5
W
W
W
W
W
0.55
1
note 3
note 4
1.4
note 5
1.6
Tstg
Tj
storage temperature
junction temperature
ambient temperature
−65
−
+150
150
+150
°C
°C
°C
Tamb
−65
Notes
1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper, tin-plated.
2004 Nov 08
3
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
001aaa229
1600
(1)
(2)
P
(mW)
tot
1200
800
400
0
(3)
−50
0
50
100
150
T
200
(°C)
amb
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) FR4 PCB; standard footprint.
Fig.2 Power derating curves.
2004 Nov 08
4
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
notes 1 and 2
note 2
50
225
125
90
K/W
K/W
K/W
K/W
K/W
K/W
note 3
note 4
note 5
80
Rth(j-s)
thermal resistance from junction to soldering point
16
Notes
1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper, tin-plated.
006aaa232
3
10
Z
th
(1)
(K/W)
(2)
(3)
(4)
(5)
2
10
(6)
(7)
(8)
(9)
10
(10)
1
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; standard footprint.
(1) δ = 1.
(3) δ = 0.5.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
(2) δ = 0.75.
(4) δ = 0.33.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 08
5
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
006aaa233
3
10
Z
th
(K/W)
(1)
2
10
(2)
(4)
(3)
(5)
(6)
(7)
10
(8)
(9)
1
(10)
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
(1) δ = 1.
(3) δ = 0.5.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
(2) δ = 0.75.
(4) δ = 0.33.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
006aaa234
3
10
Z
th
(K/W)
2
(1)
(3)
10
(2)
(4)
(5)
(6)
10
(7)
(8)
(9)
1
(10)
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.
(1) δ = 1.
(3) δ = 0.5.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
(2) δ = 0.75.
(4) δ = 0.33.
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
6
2004 Nov 08
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
ICBO
collector-base cut-off current
VCB = −20 V; IE = 0 A
VCB = −20 V; IE = 0 A; Tj = 150 °C
VEB = −5 V; IC = 0 A
VCE = −20 V; VBE = 0 V
VCE = −2 V
−
−
−
−
−
−100
−50
nA
μA
nA
nA
−
−
−
IEBO
ICES
hFE
emitter-base cut-off current
collector-emitter cut-off current
DC current gain
−100
−100
IC = −0.5 A; note 1
IC = −1 A; note 1
300
275
250
150
−
430
400
360
260
−45
−70
−100
−150
−170
34
−
−
IC = −2 A; note 1
−
IC = −5 A; note 1
−
VCEsat
collector-emitter saturation voltage IC = −0.5 A; IB = −5 mA
IC = −1 A; IB = −10 mA
−70
−110
−150
−230
−270
54
mV
mV
mV
mV
mV
mΩ
V
−
IC = −2.5 A; IB = −125 mA; note 1
−
IC = −4 A; IB = −200 mA; note 1
IC = −5 A; IB = −500 mA; note 1
IC = −5 A; IB = −500 mA; note 1
IC = −4 A; IB = −200 mA; note 1
IC = −5 A; IB = −500 mA; note 1
VCE = −2 V; IC = −2 A
−
−
RCEsat
VBEsat
equivalent on-resistance
−
base-emitter saturation voltage
−
−0.9
−1.05
−
−0.96 −1.1
−0.74 −0.85
V
VBEon
fT
base-emitter turn-on voltage
transition frequency
−
V
IC = −100 mA; VCE = −10 V;
80
100
−
MHz
f = 100 MHz
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A;
−
130
150
pF
f = 1 MHz
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Nov 08
7
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
001aaa772
001aaa773
−0.25
−1200
I
C
(A)
V
BE
(1)
(2) (3) (4)
(5)
−0.20
(mV)
−800
(1)
(2)
(3)
(6)
(7)
−0.15
−0.10
−0.05
0
(8)
(9)
−400
(10)
0
−10
−1
2
3
4
0
−0.4
−0.8
−1.2
−1.6
−2.0
(V)
−1
−10
−10
−10
−10
I (mA)
C
V
CE
(1) IB = −64 mA.
(2) IB = −57.6 mA.
(3) IB = −51.2 mA.
(4) IB = −44.8 mA.
(5)
I
B = −38.4 mA.
(8) IB = −19.2 mA.
(9) IB = −12.8 mA.
(10) IB = −6.4 mA.
VCE = −2 V.
(6) IB = −32 mA.
(7) IB = −25.6 mA.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
001aaa774
001aaa775
2
1000
10
h
FE
R
CEsat
(Ω)
800
10
(1)
600
1
(2)
400
−1
(1)
(2)
10
(3)
200
(3)
−2
−10
0
−10
10
−1
2
3
4
−1
2
3
4
−1
−10
−10
−10
−10
(mA)
−1
−10
−10
−10
−10
(mA)
C
I
I
C
IC/IB = 20.
VCE = −2 V.
(1) Tamb = 100 °C.
(2) amb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
T
(3)
Tamb = −55 °C.
Fig.8 DC current gain as a function of collector
current; typical values.
Fig.9 Equivalent on-resistance as a function of
collector current; typical values.
2004 Nov 08
8
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
001aaa776
001aaa777
3
3
−10
−10
V
V
CEsat
CEsat
(mV)
(mV)
2
2
−10
−10
(1)
(2)
(1)
(2)
(3)
(3)
−10
−10
−1
−1
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
I (mA)
C
I
C
IC/IB = 20.
Tamb = 25 °C.
(1) IC/IB = 100.
(2) IC/IB = 50.
(3) IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.10 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.11 Collector-emitter saturation voltage as a
function of collector current; typical values.
001aaa778
001aaa779
−1200
−1200
V
V
BEon
BEsat
(mV)
(mV)
−800
−800
(1)
(2)
(3)
−400
−400
0
−10
0
−10
−1
2
3
4
−1
2
3
4
−1
−10
−10
−10
−10
(mA)
−1
−10
−10
−10
−10
I (mA)
C
I
C
IC/IB = 20.
(1) Tamb = −55 °C.
(2) amb = 25 °C.
(3) Tamb = 150 °C.
Tamb = 25 °C; VCE = −2 V.
T
Fig.12 Base-emitter saturation voltage as a
function of collector current; typical values.
Fig.13 Base-emitter turn-on voltage as a function
of collector current; typical values.
2004 Nov 08
9
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
Reference mounting conditions
handbook, halfpage
32 mm
32 mm
10 mm
2.5 mm
40
mm
40 mm
10 mm
1 mm
3 mm
1 mm
2.5 mm
2.5 mm
0.5 mm
1 mm
0.5 mm
5 mm
5 mm
3.96 mm
3.96 mm
1.6 mm
1.6 mm
MLE322
001aaa234
Fig.14 FR4, standard footprint.
Fig.15 FR4, mounting pad for collector 1 cm2.
32 mm
30 mm
20
mm
40
mm
2.5 mm
0.5 mm
1 mm
5 mm
3.96 mm
1.6 mm
001aaa235
Fig.16 FR4, mounting pad for collector 6 cm2.
2004 Nov 08
10
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
p3
E
H
E
L
p
1
2
3
c
b
p2
w
M
b
p1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
b
c
D
E
e
e
H
E
L
p
w
p1
p2
p3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
4.25
3.75
1.2
0.8
mm
3.0
1.5
0.13
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-08-03
06-03-16
SOT89
TO-243
SC-62
2004 Nov 08
11
NXP Semiconductors
Product data sheet
20 V, 5 A
PNP low VCEsat (BISS) transistor
PBSS5520X
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Nov 08
12
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2009
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/02/pp13
Date of release: 2004 Nov 08
Document order number: 9397 750 13892
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