PBSS8510PA [NEXPERIA]
100 V, 5.2 A NPN low V_CEsat (BISS) transistorProduction;
| 型号： | PBSS8510PA |
| 厂家： | 
Nexperia |
| 描述： | 100 V, 5.2 A NPN low V_CEsat (BISS) transistorProduction 开关 光电二极管 晶体管 |
| 文件： | 总16页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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PBSS8510PA
100 V, 5.2 A NPN low VCEsat (BISS) transistor
Rev. 1 — 17 May 2010
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
PNP complement: PBSS9410PA.
1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol Parameter
VCEO collector-emitter voltage
IC
Quick reference data
Conditions
Min
Typ
Max
100
5.2
6
Unit
V
open base
-
-
-
-
-
-
collector current
A
ICM
peak collector current
single pulse;
A
tp ≤ 1 ms
[1]
RCEsat
collector-emitter
IC = 5.2 A;
-
48
65
mΩ
saturation resistance
IB = 260 mA
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PBSS8510PA
NXP Semiconductors
100 V, 5.2 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
base
Simplified outline
Graphic symbol
3
3
2
emitter
3
collector
1
2
sym021
1
2
Transparent top view
3. Ordering information
Table 3.
Ordering information
Type number Package
Name
Description
Version
PBSS8510PA HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061
no leads; three terminals; body 2 × 2 × 0.65 mm
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS8510PA
AE
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
100
100
6
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
-
-
-
-
-
V
open collector
V
5.2
6
A
ICM
peak collector current
single pulse;
A
tp ≤ 1 ms
IB
base current
-
-
-
-
-
600
500
1
mA
mW
W
[1]
[2]
[3]
[4]
Ptot
total power dissipation
Tamb ≤ 25 °C
1.4
2.1
W
W
PBSS8510PA
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 17 May 2010
2 of 15
PBSS8510PA
NXP Semiconductors
100 V, 5.2 A NPN low VCEsat (BISS) transistor
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Tj
Parameter
Conditions
Min
-
Max
150
Unit
°C
junction temperature
ambient temperature
storage temperature
Tamb
Tstg
−55
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aab978
2.5
P
(W)
tot
(1)
2.0
(2)
(3)
1.5
1.0
0.5
0.0
(4)
−75
−25
25
75
125
T
175
(°C)
amb
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, mounting pad for collector 1 cm2
(4) FR4 PCB, standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
Table 6.
Symbol Parameter
Rth(j-a) thermal resistance from
junction to ambient
Thermal characteristics
Conditions
Min
Typ
Max
250
125
90
Unit
K/W
K/W
K/W
K/W
[1]
in free air
-
-
-
-
-
-
-
-
[2]
[3]
[4]
60
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
PBSS8510PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 17 May 2010
3 of 15
PBSS8510PA
NXP Semiconductors
100 V, 5.2 A NPN low VCEsat (BISS) transistor
006aab979
3
10
Z
th(j-a)
duty cycle = 1
(K/W)
0.75
0.5
0.33
2
10
0.2
0.1
0.05
10
0.02
0.01
1
0
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab980
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS8510PA
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 17 May 2010
4 of 15
PBSS8510PA
NXP Semiconductors
100 V, 5.2 A NPN low VCEsat (BISS) transistor
006aab981
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
0.01
1
0
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab982
2
10
duty cycle = 1
Z
0.75
0.33
th(j-a)
(K/W)
0.5
0.2
10
0.1
0.02
0
0.05
0.01
1
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Ceramic PCB, Al2O3, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS8510PA
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 17 May 2010
5 of 15
PBSS8510PA
NXP Semiconductors
100 V, 5.2 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
ICBO
collector-base
cut-off current
VCB = 80 V; IE = 0 A
-
-
-
-
100
50
nA
VCB = 80 V; IE = 0 A;
μA
Tj = 150 °C
ICES
IEBO
hFE
collector-emitter
cut-off current
VCE = 80 V; VBE = 0 V
-
-
-
-
100
100
nA
nA
emitter-base
cut-off current
VEB = 5 V; IC = 0 A
[1]
DC current gain
VCE = 2 V
IC = 0.5 A
180
285
235
145
45
-
IC = 1 A
150
-
IC = 2 A
95
30
-
-
IC = 6 A
-
[1]
[1]
[1]
[1]
[1]
[1]
VCEsat
collector-emitter
saturation voltage
IC = 0.5 A; IB = 50 mA
IC = 1 A; IB = 50 mA
IC = 1 A; IB = 10 mA
IC = 4 A; IB = 400 mA
IC = 5.2 A; IB = 260 mA
IC = 5.2 A; IB = 260 mA
30
40
75
160
220
340
65
mV
mV
mV
mV
mV
mΩ
-
55
-
120
170
250
48
-
-
RCEsat
VBEsat
collector-emitter
saturation resistance
-
[1]
[1]
[1]
base-emitter
saturation voltage
IC = 1 A; IB = 10 mA
IC = 5.2 A; IB = 260 mA
VCE = 2 V; IC = 2 A
-
-
-
0.79 0.9
1.1
0.77 0.9
V
V
V
1
VBEon
base-emitter
turn-on voltage
td
tr
delay time
VCC = 9 V; IC = 2 A;
IBon = 0.1 A;
IBoff = −0.1 A
-
24
-
-
-
-
-
-
-
ns
rise time
-
246
270
735
230
965
150
ns
ton
ts
turn-on time
storage time
fall time
-
ns
-
ns
tf
-
ns
toff
fT
turn-off time
transition frequency
-
ns
VCE = 10 V;
IC = 100 mA;
f = 100 MHz
95
MHz
Cc
collector capacitance
VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
-
16.5 20
pF
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PBSS8510PA
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 17 May 2010
6 of 15
PBSS8510PA
NXP Semiconductors
100 V, 5.2 A NPN low VCEsat (BISS) transistor
006aac128
006aac129
600
6
4
2
0
I
B
(mA) = 110
88
99
77
h
I
C
(A)
FE
66
44
(1)
(2)
55
33
400
22
(3)
11
200
0
10
−1
2
3
4
1
10
10
10
10
(mA)
0.0
1.0
2.0
3.0
4.0
5.0
(V)
I
C
V
CE
VCE = 2 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 6. DC current gain as a function of collector
current; typical values
Fig 7. Collector current as a function of
collector-emitter voltage; typical values
006aac130
006aac131
1.2
1.2
V
V
BEsat
BE
(V)
(V)
(1)
(1)
0.8
0.8
(2)
(3)
(2)
(3)
0.4
0.4
0.0
10
0.0
10
−1
2
3
4
−1
2
3
4
1
10
10
10
10
(mA)
1
10
10
10
10
I (mA)
C
I
C
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 8. Base-emitter voltage as a function of collector
current; typical values
Fig 9. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS8510PA
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 17 May 2010
7 of 15
PBSS8510PA
NXP Semiconductors
100 V, 5.2 A NPN low VCEsat (BISS) transistor
006aac132
006aac133
1
10
V
CEsat
(V)
V
(V)
CEsat
1
(1)
(2)
−1
−1
10
10
10
10
(1)
(2)
(3)
−2
−3
(3)
10
−2
10
10
−1
2
3
4
−1
2
3
4
1
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 11. Collector-emitter saturation voltage as a
function of collector current; typical values
006aac134
006aac135
3
3
10
10
R
CEsat
R
CEsat
(Ω)
(Ω)
2
2
10
10
(1)
(2)
10
10
1
1
(1)
(2)
(3)
−1
−1
10
10
(3)
−2
10
−2
10
10
−1
2
3
4
−1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 13. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS8510PA
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 17 May 2010
8 of 15
PBSS8510PA
NXP Semiconductors
100 V, 5.2 A NPN low VCEsat (BISS) transistor
8. Test information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig 14. BISS transistor switching time definition
V
V
CC
BB
R
R
C
B
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
I
DUT
R1
mlb826
VCC = 9 V; IC = 2 A; IBon = 0.1 A; IBoff = −0.1 A
Fig 15. Test circuit for switching times
PBSS8510PA
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 17 May 2010
9 of 15
PBSS8510PA
NXP Semiconductors
100 V, 5.2 A NPN low VCEsat (BISS) transistor
9. Package outline
1.3
0.65
max
0.35
0.25
0.45
0.35
1
2
1.05
0.95
2.1
1.1
0.9
1.9
0.3
0.2
3
1.6
1.4
2.1
1.9
Dimensions in mm
09-11-12
Fig 16. Package outline SOT1061 (HUSON3)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
Packing quantity
3000
PBSS8510PA SOT1061 4 mm pitch, 8 mm tape and reel
-115
[1] For further information and the availability of packing methods, see Section 14.
PBSS8510PA
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 17 May 2010
10 of 15
PBSS8510PA
NXP Semiconductors
100 V, 5.2 A NPN low VCEsat (BISS) transistor
11. Soldering
2.1
1.3
0.5 (2×)
0.4 (2×)
0.5 (2×) 0.6 (2×)
1.05
0.6
0.55
2.3
0.25
1.1
1.2
0.25
0.25
0.4
0.5
1.6
1.7
Dimensions in mm
solder paste = solder lands
solder resist
occupied area
sot1061_fr
Reflow soldering is the only recommended soldering method.
Fig 17. Reflow soldering footprint SOT1061 (HUSON3)
PBSS8510PA
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 17 May 2010
11 of 15
PBSS8510PA
NXP Semiconductors
100 V, 5.2 A NPN low VCEsat (BISS) transistor
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBSS8510PA v.1
20100517
Product data sheet
-
-
PBSS8510PA
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 17 May 2010
12 of 15
PBSS8510PA
NXP Semiconductors
100 V, 5.2 A NPN low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
13.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
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internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
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Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
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13.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
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changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
PBSS8510PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 17 May 2010
13 of 15
PBSS8510PA
NXP Semiconductors
100 V, 5.2 A NPN low VCEsat (BISS) transistor
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PBSS8510PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 17 May 2010
14 of 15
PBSS8510PA
NXP Semiconductors
100 V, 5.2 A NPN low VCEsat (BISS) transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
3
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 17 May 2010
Document identifier: PBSS8510PA
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