PDTA143EQB-Q [NEXPERIA]

50 V, 100 mA PNP resistor-equipped transistorsProduction;
PDTA143EQB-Q
型号: PDTA143EQB-Q
厂家: Nexperia    Nexperia
描述:

50 V, 100 mA PNP resistor-equipped transistorsProduction

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PDTA143/114/124/144EQB-Q  
series  
50 V, 100 mA PNP resistor-equipped transistors  
Rev. 1 — 28 September 2021  
Product data sheet  
1. General description  
100 mA PNP Resistor-Equipped Transistor (RET) family in an ultra small DFN1110D-3 (SOT8015)  
leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.  
Table 1. Product overview  
Type number  
R1  
kΩ  
4.7  
10  
22  
47  
R2  
kΩ  
4.7  
10  
22  
47  
Package  
JEDEC  
MO-340BA  
NPN complement:  
Nexperia  
PDTA143EQB-Q  
PDTA114EQB-Q  
PDTA124EQB-Q  
PDTA144EQB-Q  
SOT8015  
PDTC143EQB-Q  
PDTC114EQB-Q  
PDTC124EQB-Q  
PDTC144EQB-Q  
2. Features and benefits  
100 mA output current capability  
Built-in resistors  
Simplifies circuit design  
Reduces component count  
Reduces pick and place costs  
Low package height of 0.5 mm  
Suitable for Automatic Optical Inspection (AOI) of solder joint  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
Digital applications  
Cost saving alternative for BC857-Q series in digital applications  
Controlling IC inputs  
Switching loads  
4. Quick reference data  
Table 2. Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol  
VCEO  
IO  
Parameter  
Conditions  
Min  
Typ  
Max  
-50  
Unit  
V
collector-emitter voltage  
output current  
open base  
-
-
-
-
-100  
mA  
 
 
 
 
Nexperia  
PDTA143/114/124/144EQB-Q series  
50 V, 100 mA PNP resistor-equipped transistors  
5. Pinning information  
Table 3. Pinning  
Pin  
1
Symbol  
Description  
Simplified outline  
Graphic symbol  
I
input (base)  
O
R1  
2
GND  
O
GND (emitter)  
output (collector)  
3
I
3
R2  
GND  
1
2
aaa-019606  
Transparent top view  
6. Ordering information  
Table 4. Ordering information  
Type number  
Package  
Name  
Description  
Version  
PDTA143EQB-Q  
PDTA114EQB-Q  
PDTA124EQB-Q  
PDTA144EQB-Q  
DFN1110D-3  
plastic leadless extremely thin small outline package  
with side-wettable flanks (SWF); 3 terminals; 0.65 mm  
pitch; body: 1.1 x 1.0 x 0.48 mm  
SOT8015  
7. Marking  
Table 5. Marking  
Type number  
Marking code  
PDTA143EQB-Q  
PDTA114EQB-Q  
PDTA124EQB-Q  
PDTA144EQB-Q  
D5  
C8  
D3  
D8  
©
PDTA143_114_124_144EQB-Q_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 28 September 2021  
2 / 18  
 
 
 
Nexperia  
PDTA143/114/124/144EQB-Q series  
50 V, 100 mA PNP resistor-equipped transistors  
8. Limiting values  
Table 6. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Tamb = 25 °C unless otherwise specified.  
Symbol  
VCBO  
VCEO  
VEBO  
VI  
Parameter  
Conditions  
open emitter  
open base  
Min  
Max  
-50  
-50  
-10  
Unit  
V
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
input voltage  
-
-
-
V
open collector  
V
PDTA143EQB-Q  
PDTA114EQB-Q  
PDTA124EQB-Q  
PDTA144EQB-Q  
output current  
-30  
-40  
-40  
-40  
-
+10  
+10  
+10  
+10  
-100  
340  
420  
150  
150  
150  
V
V
V
V
IO  
mA  
mW  
mW  
°C  
°C  
°C  
Ptot  
total power dissipation  
Tamb ≤ 25 °C  
[1] -  
[2] -  
-
Tj  
junction temperature  
ambient temperature  
storage temperature  
Tamb  
Tstg  
-55  
-65  
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided; 35 µm copper; tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB; single-sided; 70 µm copper; tin-plated and standard footprint.  
aaa-030584  
500  
P
tot  
(mW)  
(1)  
(2)  
400  
300  
200  
100  
0
-75  
-25  
25  
75  
125  
175  
(°C)  
T
amb  
(1) FR4 PCB; single-sided; 70 µm copper; standard footprint  
(2) FR4 PCB; single-sided; 35 µm copper; standard footprint  
Fig. 1. Power derating curves  
©
PDTA143_114_124_144EQB-Q_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 28 September 2021  
3 / 18  
 
 
Nexperia  
PDTA143/114/124/144EQB-Q series  
50 V, 100 mA PNP resistor-equipped transistors  
9. Thermal characteristics  
Table 7. Thermal characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
[1] -  
[2] -  
Typ  
Max  
368  
298  
Unit  
K/W  
K/W  
Rth(j-a)  
thermal resistance from junction to ambient  
in free air  
-
-
[1] Device mounted on an FR4 PCB; single-sided; 35 μm copper; tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB; single-sided; 70 μm copper; tin-plated and standard footprint.  
aaa-030582  
3
10  
duty cycle =  
Z
th(j-a)  
(K/W)  
1
0.75  
0.33  
0.50  
2
10  
0.20  
0.05  
0.10  
0.02  
10  
0.01  
0
1
-5  
10  
-4  
-3  
-2  
10  
-1  
2
3
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB; single-sided; 35 μm copper; tin-plated and standard footprint.  
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
aaa-030583  
3
10  
duty cycle =  
Z
th(j-a)  
(K/W)  
1
0.75  
0.33  
0.50  
2
10  
0.20  
0.05  
0.10  
0.02  
10  
0.01  
0
1
-5  
10  
-4  
-3  
-2  
10  
-1  
2
3
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB; single-sided; 70 μm copper; tin-plated and standard footprint.  
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
©
PDTA143_114_124_144EQB-Q_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 28 September 2021  
4 / 18  
 
 
Nexperia  
PDTA143/114/124/144EQB-Q series  
50 V, 100 mA PNP resistor-equipped transistors  
10. Characteristics  
Table 8. Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
V(BR)CBO  
collector-base  
IC = -100 µA; IE = 0 A  
-50  
-
-
V
breakdown voltage  
V(BR)CEO  
ICBO  
collector-emitter  
breakdown voltage  
IC = -2 mA; IB = 0 A  
VCB = -50 V; IE = 0 A  
-50  
-
-
-
-
V
collector-base cut-off  
current  
-100 nA  
-100 nA  
ICEO  
collector-emitter cut-off VCE = -30 V; IB = 0 A  
current  
-
-
-
-
VCE = -30 V; IB = 0 A; Tj = 150 °C  
-5  
µA  
IEBO  
emitter-base cut-off current  
PDTA143EQB-Q  
PDTA114EQB-Q  
PDTA124EQB-Q  
PDTA144EQB-Q  
DC current gain  
PDTA143EQB-Q  
PDTA114EQB-Q  
PDTA124EQB-Q  
PDTA144EQB-Q  
VEB = -5 V; IC = 0 A  
-
-
-
-
-
-
-900 µA  
-400 µA  
-180 µA  
-90  
µA  
hFE  
VCE = -5 V; IC = -10 mA  
VCE = -5 V; IC = -5 mA  
30  
30  
60  
80  
-
-
-
-
-
-
-
-
-
-
VCEsat  
VI(off)  
collector-emitter  
saturation voltage  
IC = -10 mA; IB = -0.5 mA  
VCE = -5 V ; IC = -100 µA  
-100 mV  
off-state input voltage  
PDTA143EQB-Q  
PDTA114EQB-Q  
PDTA124EQB-Q  
PDTA144EQB-Q  
on-state input voltage  
PDTA143EQB-Q  
PDTA114EQB-Q  
PDTA124EQB-Q  
PDTA144EQB-Q  
bias resistor 1 (input)  
PDTA143EQB-Q  
PDTA114EQB-Q  
PDTA124EQB-Q  
PDTA144EQB-Q  
bias resistor ratio  
transition frequency  
collector capacitance  
-
-
-
-
-1.1  
-1.1  
-1.1  
-1.2  
-0.5  
-0.8  
-0.8  
-0.8  
V
V
V
V
VI(on)  
VCE = -0.3 V ; IC = -20 mA  
VCE = -0.3 V ; IC = -10 mA  
VCE = -0.3 V ; IC = -5 mA  
VCE = -0.3 V ; IC = -2 mA  
-2.5  
-2.5  
-2.5  
-3.0  
-1.9  
-1.8  
-1.7  
-1.6  
-
-
-
-
V
V
V
V
R1  
[1] 3.3  
7
4.7  
10  
6.1  
13  
kΩ  
kΩ  
15.4 22  
28.6 kΩ  
33  
47  
1
61  
1.2  
-
kΩ  
R2/R1  
fT  
0.8  
VCE = -5 V; IC = -10 mA; f = 100 MHz  
VCB = -10 V; IE = ie = 0 A; f = 1 MHz  
[2] -  
180  
-
MHz  
pF  
Cc  
-
3
[1] See "Section 11: Test information" for resistor calculation and test conditions  
[2] Characteristics of built-in transistor  
©
PDTA143_114_124_144EQB-Q_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 28 September 2021  
5 / 18  
 
 
Nexperia  
PDTA143/114/124/144EQB-Q series  
50 V, 100 mA PNP resistor-equipped transistors  
006aac836  
3
10  
(1)  
h
FE  
(2)  
aaa-017925  
-0.1  
(3)  
-0.90 mA  
I
C
2
10  
-0.81 mA  
-0.72 mA  
-0.63 mA  
(A)  
-0.08  
-0.54 mA  
-0.45 mA  
-0.06  
-0.04  
-0.02  
0
10  
-0.36 mA  
-0.27 mA  
1
-1  
-10  
2
-1  
-10  
-10  
I
(mA)  
C
I
= -0.18 mA  
B
VCE = -5 V  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = -40 °C  
0
-1  
-2  
-3  
-4  
-5  
V
(V)  
CE  
Tamb = 25 °C  
Fig. 4. PDTA143EQB-Q: DC current gain as a function Fig. 5. PDTA143EQB-Q: Collector current as a function  
of collector current; typical values  
of collector-emitter voltage; typical values  
006aac837  
-1  
006aac838  
-10  
V
CEsat  
(V)  
V
I(on)  
(V)  
(1)  
(2)  
(3)  
-1  
-10  
(1)  
-1  
(2)  
(3)  
-2  
-10  
2
-1  
-10  
-10  
-1  
-10  
I
(mA)  
C
-1  
2
-10  
-1  
-10  
-10  
I
(mA)  
C
IC/IB = 20  
VCE = -0.3 V  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = -40 °C  
(1) Tamb = -40 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
Fig. 6. PDTA143EQB-Q: Collector-emitter saturation  
voltage as a function of collector current;  
typical values  
Fig. 7. PDTA143EQB-Q: On-state input voltage as a  
function of collector current; typical values  
©
PDTA143_114_124_144EQB-Q_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 28 September 2021  
6 / 18  
Nexperia  
PDTA143/114/124/144EQB-Q series  
50 V, 100 mA PNP resistor-equipped transistors  
006aac839  
-10  
006aac840  
8
C
(pF)  
c
V
I(off)  
(V)  
6
4
2
0
(1)  
(2)  
-1  
(3)  
-1  
-10  
-1  
-10  
-1  
-10  
I
(mA)  
C
0
-10  
-20  
-30  
-40  
V
-50  
(V)  
CB  
VCE = -5 V  
(1) Tamb = -40 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
f = 1 MHz  
Tamb = 25 °C  
Fig. 9. PDTA143EQB-Q: Collector capacitance as  
a function of collector-base voltage; typical  
values  
Fig. 8. PDTA143EQB-Q: Off-state input voltage as a  
function of collector current; typical values  
006aac773  
3
10  
h
FE  
(1)  
aaa-017927  
-0.1  
-0.80 mA  
I
C
(2)  
(3)  
-0.72 mA  
-0.64 mA  
-0.56 mA  
2
(A)  
10  
-0.08  
-0.48 mA  
-0.40 mA  
-0.06  
-0.04  
-0.02  
0
10  
-0.32 mA  
-0.24 mA  
1
-0.16 mA  
-1  
-10  
2
-1  
-10  
-10  
I
(mA)  
I
B
= -0.08 mA  
C
VCE = -5 V  
0
-1  
-2  
-3  
-4  
-5  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = -40 °C  
V
(V)  
CE  
Tamb = 25 °C  
Fig. 10. PDTA114EQB-Q: DC current gain as a function Fig. 11. PDTA114EQB-Q: Collector current as a function  
of collector current; typical values  
of collector-emitter voltage; typical values  
©
PDTA143_114_124_144EQB-Q_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 28 September 2021  
7 / 18  
Nexperia  
PDTA143/114/124/144EQB-Q series  
50 V, 100 mA PNP resistor-equipped transistors  
aaa-017926  
-1  
006aac775  
-10  
V
CEsat  
(V)  
V
I(on)  
(V)  
(1)  
(2)  
-1  
-10  
(1)  
(2)  
(3)  
-1  
(3)  
-2  
-10  
2
-1  
-10  
-10  
-1  
-10  
I
(mA)  
C
-1  
2
-10  
-1  
-10  
-10  
I
(mA)  
C
IC/IB = 20  
VCE = -0.3 V  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = -40 °C  
(1) Tamb = -40 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
Fig. 12. PDTA114EQB-Q: Collector-emitter saturation  
voltage as a function of collector current;  
typical values  
Fig. 13. PDTA114EQB-Q: On-state input voltage as a  
function of collector current; typical values  
006aac776  
-10  
006aac777  
6
V
I(off)  
(V)  
C
(pF)  
c
(1)  
(2)  
4
2
0
-1  
(3)  
-1  
-10  
-1  
-10  
-1  
-10  
I
(mA)  
C
0
-10  
-20  
-30  
-40  
V
-50  
(V)  
CB  
VCE = -5 V  
(1) Tamb = -40 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
f = 1 MHz  
Tamb = 25 °C  
Fig. 15. PDTA114EQB-Q: Collector capacitance as  
a function of collector-base voltage; typical  
values  
Fig. 14. PDTA114EQB-Q: Off-state input voltage as a  
function of collector current; typical values  
©
PDTA143_114_124_144EQB-Q_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 28 September 2021  
8 / 18  
Nexperia  
PDTA143/114/124/144EQB-Q series  
50 V, 100 mA PNP resistor-equipped transistors  
006aac800  
3
10  
h
FE  
aaa-017929  
(1)  
-0.1  
(2)  
(3)  
I
-0.80 mA  
-0.72 mA  
-0.64 mA  
-0.56 mA  
C
2
(A)  
10  
-0.08  
-0.48 mA  
-0.40 mA  
-0.06  
-0.04  
-0.02  
0
10  
-0.32 mA  
-0.24 mA  
-0.16 mA  
1
-1  
-10  
2
-1  
-10  
-10  
I
(mA)  
C
I
B
= -0.08 mA  
VCE = -5 V  
0
-1  
-2  
-3  
-4  
-5  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = -40 °C  
V
(V)  
CE  
Tamb = 25 °C  
Fig. 16. PDTA124EQB-Q: DC current gain as a function Fig. 17. PDTA124EQB-Q: Collector current as a function  
of collector current; typical values  
of collector-emitter voltage; typical values  
aaa-017928  
-1  
006aac802  
-10  
V
CEsat  
(V)  
V
I(on)  
(V)  
(2)  
(3)  
-1  
-10  
-1  
(1)  
(2)  
(3)  
-2  
-10  
-1  
2
-10  
-1  
-10  
-10  
-1  
-10  
I
(mA)  
C
-1  
2
-10  
-1  
-10  
-10  
I
(mA)  
C
IC/IB = 20  
VCE = -0.3 V  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = -40 °C  
(1) Tamb = -40 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
Fig. 18. PDTA124EQB-Q: Collector-emitter saturation  
voltage as a function of collector current;  
typical values  
Fig. 19. PDTA124EQB-Q: On-state input voltage as a  
function of collector current; typical values  
©
PDTA143_114_124_144EQB-Q_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 28 September 2021  
9 / 18  
Nexperia  
PDTA143/114/124/144EQB-Q series  
50 V, 100 mA PNP resistor-equipped transistors  
006aac803  
-10  
006aac804  
6
V
I(off)  
(V)  
C
(pF)  
c
4
2
0
(2)  
(3)  
-1  
-1  
-10  
-1  
-10  
-1  
-10  
I
(mA)  
C
0
-10  
-20  
-30  
-40  
V
-50  
(V)  
CB  
VCE = -5 V  
(1) Tamb = -40 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
f = 1 MHz  
Tamb = 25 °C  
Fig. 21. PDTA124EQB-Q: Collector capacitance as  
a function of collector-base voltage; typical  
values  
Fig. 20. PDTA124EQB-Q: Off-state input voltage as a  
function of collector current; typical values  
006aac758  
3
10  
h
FE  
(1)  
(2)  
(3)  
aaa-017941  
-0.1  
-0.70 mA  
I
C
(A)  
-0.63 mA  
-0.56 mA  
-0.49 mA  
2
10  
-0.08  
-0.42 mA  
-0.35 mA  
-0.06  
-0.04  
-0.02  
0
10  
-0.28 mA  
-0.21 mA  
-0.14 mA  
1
-1  
-10  
2
-1  
-10  
-10  
I = -0.07 mA  
B
I
(mA)  
C
VCE = -5 V  
0
-1  
-2  
-3  
-4  
-5  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = -40 °C  
V
(V)  
CE  
Tamb = 25 °C  
Fig. 22. PDTA144EQB-Q: DC current gain as a function Fig. 23. PDTA144EQB-Q: Collector current as a function  
of collector current; typical values  
of collector-emitter voltage; typical values  
©
PDTA143_114_124_144EQB-Q_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 28 September 2021  
10 / 18  
Nexperia  
PDTA143/114/124/144EQB-Q series  
50 V, 100 mA PNP resistor-equipped transistors  
aaa-017946  
-1  
006aac760  
-10  
V
CEsat  
(V)  
V
I(on)  
(V)  
(1)  
(2)  
(3)  
-1  
-10  
-1  
(1)  
(2)  
(3)  
-2  
-10  
-1  
2
-10  
-1  
-10  
-10  
-1  
-10  
I
(mA)  
C
-1  
2
-10  
-1  
-10  
-10  
I
(mA)  
C
IC/IB = 20  
VCE = -0.3 V  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = -40 °C  
(1) Tamb = -40 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
Fig. 24. PDTA144EQB-Q: Collector-emitter saturation  
voltage as a function of collector current;  
typical values  
Fig. 25. PDTA144EQB-Q: On-state input voltage as a  
function of collector current; typical values  
006aac761  
-10  
006aac762  
9
V
I(off)  
(V)  
C
(pF)  
c
(1)  
(2)  
(3)  
6
3
0
-1  
-1  
-10  
-1  
-10  
-1  
-10  
I
(mA)  
C
0
-10  
-20  
-30  
-40  
V
-50  
(V)  
CB  
VCE = -5 V  
(1) Tamb = -40 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
f = 1 MHz  
Tamb = 25 °C  
Fig. 27. PDTA144EQB-Q: Collector capacitance as  
a function of collector-base voltage; typical  
values of built-in transistor  
Fig. 26. PDTA144EQB-Q: Off-state input voltage as a  
function of collector current; typical values  
©
PDTA143_114_124_144EQB-Q_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 28 September 2021  
11 / 18  
Nexperia  
PDTA143/114/124/144EQB-Q series  
50 V, 100 mA PNP resistor-equipped transistors  
006aac763  
3
10  
f
T
(MHz)  
2
10  
10  
-1  
-10  
2
-1  
-10  
-10  
I
(mA)  
C
f = 100 MHz  
Tamb = 25 °C  
VCE = -5 V  
Fig. 28. Transition frequency as a function of collector current; typical values of built-in transistor  
©
PDTA143_114_124_144EQB-Q_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 28 September 2021  
12 / 18  
Nexperia  
PDTA143/114/124/144EQB-Q series  
50 V, 100 mA PNP resistor-equipped transistors  
11. Test information  
Resistor calculation  
Calculation of bias resistor 1 (R1)  
Calculation of bias resistor ratio (R2/R1)  
n.c.  
I
I
; I  
I1 I2  
R1  
; I  
I3 I4  
R2  
GND  
aaa-020083  
Fig. 29. Resistor test circuit  
Resistor test conditions  
Table 9. Resistor test conditions  
Type number  
R1 (kΩ)  
R2 (kΩ)  
Test conditions  
II1  
II2  
II3  
II4  
PDTA143EQB-Q  
PDTA114EQB-Q  
PDTA124EQB-Q  
PDTA144EQB-Q  
4.7  
10  
22  
47  
4.7  
10  
22  
47  
-600 μA  
-350 μA  
-150 μA  
-55 μA  
-700 μA  
-450 μA  
-230 μA  
-105 μA  
600 μA  
350 μA  
150 μA  
55 μA  
700 μA  
450 μA  
230 μA  
105 μA  
11.1. Quality information  
This product has been qualified in accordance with the Automotive Electronics Council (AEC)  
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in  
automotive applications.  
©
PDTA143_114_124_144EQB-Q_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 28 September 2021  
13 / 18  
 
 
Nexperia  
PDTA143/114/124/144EQB-Q series  
50 V, 100 mA PNP resistor-equipped transistors  
12. Package outline  
1.1  
0.50  
0.44  
0.04  
max  
0.65  
0.30  
0.22  
0.27  
0.20  
1
2
0.20  
1.0  
0.48  
0.40  
3
0.95  
0.87  
0.22  
0.10  
Dimensions in mm  
21-06-29  
Fig. 30. Package outline DFN1110D-3 (SOT8015)  
©
PDTA143_114_124_144EQB-Q_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 28 September 2021  
14 / 18  
 
Nexperia  
PDTA143/114/124/144EQB-Q series  
50 V, 100 mA PNP resistor-equipped transistors  
13. Soldering  
Footprint information for reflow soldering of DFN1110D-3 package  
SOT8015  
1.4  
0.45  
0.35  
0.25  
0.2  
0.3  
0.65  
0.6  
0.5  
0.4  
0.12 0.22  
0.34 0.44  
1.8  
0.88 0.78 0.68  
0.34  
0.34  
0.2  
0.3  
0.4  
0.8  
0.9  
occupied area  
solder resist  
1.0  
solder lands  
solder paste  
recommended stencil thickness: 0.1 mm  
Dimensions in mm  
19-11-27  
Issue date  
sot8015_fr  
Fig. 31. Reflow soldering footprint DFN1110D-3 (SOT8015)  
©
PDTA143_114_124_144EQB-Q_SER  
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Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 28 September 2021  
15 / 18  
 
Nexperia  
PDTA143/114/124/144EQB-Q series  
50 V, 100 mA PNP resistor-equipped transistors  
14. Revision history  
Table 10. Revision history  
Data sheet ID  
Release date  
Data sheet status  
Change  
notice  
Supersedes  
PDTA143_114_124_144EQB-  
Q_SER v.1  
20210928  
Product data sheet  
-
-
©
PDTA143_114_124_144EQB-Q_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 28 September 2021  
16 / 18  
 
Nexperia  
PDTA143/114/124/144EQB-Q series  
50 V, 100 mA PNP resistor-equipped transistors  
equipment, nor in applications where failure or malfunction of an Nexperia  
product can reasonably be expected to result in personal injury, death or  
severe property or environmental damage. Nexperia and its suppliers accept  
no liability for inclusion and/or use of Nexperia products in such equipment or  
applications and therefore such inclusion and/or use is at the customer's own  
risk.  
15. Legal information  
Data sheet status  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Document status Product  
Definition  
[1][2]  
status [3]  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no representation  
or warranty that such applications will be suitable for the specified use  
without further testing or modification.  
Objective [short]  
data sheet  
Development  
This document contains data from  
the objective specification for  
product development.  
Preliminary [short]  
data sheet  
Qualification  
Production  
This document contains data from  
the preliminary specification.  
Customers are responsible for the design and operation of their applications  
and products using Nexperia products, and Nexperia accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
sole responsibility to determine whether the Nexperia product is suitable  
and fit for the customer’s applications and products planned, as well as  
for the planned application and use of customer’s third party customer(s).  
Customers should provide appropriate design and operating safeguards to  
minimize the risks associated with their applications and products.  
Product [short]  
data sheet  
This document contains the product  
specification.  
[1] Please consult the most recently issued document before initiating or  
completing a design.  
[2] The term 'short data sheet' is explained in section "Definitions".  
[3] The product status of device(s) described in this document may have  
changed since this document was published and may differ in case of  
multiple devices. The latest product status information is available on  
the internet at https://www.nexperia.com.  
Nexperia does not accept any liability related to any default, damage, costs  
or problem which is based on any weakness or default in the customer’s  
applications or products, or the application or use by customer’s third party  
customer(s). Customer is responsible for doing all necessary testing for the  
customer’s applications and products using Nexperia products in order to  
avoid a default of the applications and the products or of the application or  
use by customer’s third party customer(s). Nexperia does not accept any  
liability in this respect.  
Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Nexperia does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
and shall have no liability for the consequences of use of such information.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is  
intended for quick reference only and should not be relied upon to contain  
detailed and full information. For detailed and full information see the relevant  
full data sheet, which is available on request via the local Nexperia sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of commercial sale — Nexperia products are  
sold subject to the general terms and conditions of commercial sale, as  
published at http://www.nexperia.com/profile/terms, unless otherwise agreed  
in a valid written individual agreement. In case an individual agreement is  
concluded only the terms and conditions of the respective agreement shall  
apply. Nexperia hereby expressly objects to applying the customer’s general  
terms and conditions with regard to the purchase of Nexperia products by  
customer.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Nexperia and its customer, unless Nexperia and customer have explicitly  
agreed otherwise in writing. In no event however, shall an agreement be  
valid in which the Nexperia product is deemed to offer functions and qualities  
beyond those described in the Product data sheet.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Disclaimers  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Limited warranty and liability — Information in this document is believed  
to be accurate and reliable. However, Nexperia does not give any  
representations or warranties, expressed or implied, as to the accuracy  
or completeness of such information and shall have no liability for the  
consequences of use of such information. Nexperia takes no responsibility  
for the content in this document if provided by an information source outside  
of Nexperia.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
In no event shall Nexperia be liable for any indirect, incidental, punitive,  
special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal  
or replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Trademarks  
Notice: All referenced brands, product names, service names and  
trademarks are the property of their respective owners.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Nexperia’s aggregate and cumulative liability towards customer  
for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale of Nexperia.  
Right to make changes — Nexperia reserves the right to make changes  
to information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
Suitability for use in automotive applications — This Nexperia product  
has been qualified for use in automotive applications. Unless otherwise  
agreed in writing, the product is not designed, authorized or warranted to  
be suitable for use in life support, life-critical or safety-critical systems or  
©
PDTA143_114_124_144EQB-Q_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 28 September 2021  
17 / 18  
 
Nexperia  
PDTA143/114/124/144EQB-Q series  
50 V, 100 mA PNP resistor-equipped transistors  
Contents  
1. General description......................................................1  
2. Features and benefits.................................................. 1  
3. Applications.................................................................. 1  
4. Quick reference data....................................................1  
5. Pinning information......................................................2  
6. Ordering information....................................................2  
7. Marking..........................................................................2  
8. Limiting values............................................................. 3  
9. Thermal characteristics............................................... 4  
10. Characteristics............................................................5  
11. Test information........................................................13  
11.1. Quality information...................................................13  
12. Package outline........................................................ 14  
13. Soldering................................................................... 15  
14. Revision history........................................................16  
15. Legal information......................................................17  
© Nexperia B.V. 2021. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 28 September 2021  
©
PDTA143_114_124_144EQB-Q_SER  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
Rev. 1 — 28 September 2021  
18 / 18  

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