PDTA143XMB [NEXPERIA]

PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩProduction;
PDTA143XMB
型号: PDTA143XMB
厂家: Nexperia    Nexperia
描述:

PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩProduction

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Important notice  
Dear Customer,  
On 7 February 2017 the former NXP Standard Product business became a new company with the  
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS  
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable  
application markets  
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use  
the references to Nexperia, as shown below.  
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,  
use http://www.nexperia.com  
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use  
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on  
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights  
reserved  
Should be replaced with:  
- © Nexperia B.V. (year). All rights reserved.  
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail  
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Kind regards,  
Team Nexperia  
PDTA143XMB  
SOT883B  
PNP resistor-equipped transistor; R1 = 4.7 k, R2 = 10 kΩ  
Rev. 1 — 1 June 2012  
Product data sheet  
1. Product profile  
1.1 General description  
PNP Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B  
Surface-Mounted Device (SMD) plastic package.  
NPN complement: PDTC143XMB.  
1.2 Features and benefits  
100 mA output current capability  
Reduces component count  
Built-in bias resistors  
Simplifies circuit design  
AEC-Q101 qualified  
Leadless ultra small SMD plastic  
package  
Reduces pick and place costs  
Low package height of 0.37 mm  
1.3 Applications  
Low-current peripheral driver  
Control of IC inputs  
Replaces general-purpose transistors  
in digital applications  
Mobile applications  
1.4 Quick reference data  
Table 1.  
Symbol  
VCEO  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
collector-emitter  
voltage  
open base  
-
-
-50  
V
IO  
output current  
-
-
-100  
6.1  
mA  
R1  
bias resistor 1 (input)  
bias resistor ratio  
Tamb = 25 °C  
3.3  
1.7  
4.7  
2.1  
k  
R2/R1  
2.6  
PDTA143XMB  
NXP Semiconductors  
PNP resistor-equipped transistor; R1 = 4.7 k, R2 = 10 kΩ  
2. Pinning information  
Table 2.  
Pinning information  
Symbol Description  
Pin  
1
Simplified outline  
Graphic symbol  
I
input (base)  
1
2
3
2
2
G
O
GND (emitter)  
output (collector)  
3
R1  
1
3
R2  
Transparent  
top view  
SOT883B (DFN1006B-3)  
sym003  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
PDTA143XMB  
DFN1006B-3  
Leadless ultra small plastic package; 3 solder lands;  
body 1.0 x 0.6 x 0.37 mm  
SOT883B  
4. Marking  
Table 4.  
Marking codes  
Type number  
PDTA143XMB  
Marking code  
0010 1001  
PIN 1 INDICATION  
READING DIRECTION  
READING EXAMPLE:  
0111  
1011  
MARKING CODE  
(EXAMPLE)  
READING DIRECTION  
006aac673  
Fig 1. DFN1006B-3 (SOT883B) binary marking code description  
PDTA143XMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 1 June 2012  
2 of 11  
PDTA143XMB  
NXP Semiconductors  
PNP resistor-equipped transistor; R1 = 4.7 k, R2 = 10 kΩ  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VCBO  
VCEO  
VEBO  
VI  
Parameter  
Conditions  
open emitter  
open base  
open collector  
positive  
Min  
Max  
-50  
-50  
-7  
Unit  
V
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
input voltage  
-
-
V
-
V
-
7
V
negative  
-
-20  
-100  
-100  
250  
150  
150  
150  
V
IO  
output current  
-
mA  
mA  
mW  
°C  
°C  
°C  
ICM  
Ptot  
Tj  
peak collector current  
total power dissipation  
junction temperature  
ambient temperature  
storage temperature  
pulsed; tp 1 ms  
Tamb 25 °C  
-
[1]  
-
-
Tamb  
Tstg  
-65  
-65  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.  
006aad009  
300  
P
tot  
(mW)  
200  
100  
0
-75  
-25  
25  
75  
125  
175  
(°C)  
T
amb  
FR4 PCB, standard footprint  
Fig 2. Power derating curve for DFN1006B-3 (SOT883B)  
6. Thermal characteristics  
Table 6.  
Symbol  
Rth(j-a)  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
[1]  
thermal resistance  
from junction to  
ambient  
in free air  
-
-
500  
K/W  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
PDTA143XMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 1 June 2012  
3 of 11  
PDTA143XMB  
NXP Semiconductors  
PNP resistor-equipped transistor; R1 = 4.7 k, R2 = 10 kΩ  
006aab603  
3
10  
duty cycle =  
1
Z
th(j-a)  
0.75  
0.33  
(K/W)  
0.5  
2
10  
0.2  
0.1  
0.05  
0.02  
10  
0.01  
0
1
10  
5  
4  
3  
2  
1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, standard footprint  
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
7. Characteristics  
Table 7.  
Symbol  
ICBO  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
collector-base cut-off  
current  
VCB = -50 V; IE = 0 A; Tamb = 25 °C  
-
-
-100  
nA  
ICEO  
collector-emitter cut-off VCE = -30 V; IB = 0 A; Tamb = 25 °C  
-
-
-
-
-
-
-1  
µA  
µA  
µA  
current  
VCE = -30 V; IB = 0 A; Tj = 150 °C  
-5  
IEBO  
emitter-base cut-off  
current  
VEB = -5 V; IC = 0 A; Tamb = 25 °C  
-600  
hFE  
DC current gain  
VCE = -5 V; IC = -10 mA; Tamb = 25 °C  
IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C  
50  
-
-
-
-
VCEsat  
collector-emitter  
-100  
mV  
saturation voltage  
VI(off)  
VI(on)  
R1  
off-state input voltage VCE = -5 V; IC = -100 µA; Tamb = 25 °C  
on-state input voltage VCE = -0.3 V; IC = -20 mA; Tamb = 25 °C  
-
-0.9  
-1.5  
4.7  
2.1  
-
-0.3  
-
V
-2.5  
3.3  
1.7  
-
V
bias resistor 1 (input)  
bias resistor ratio  
Tamb = 25 °C  
6.1  
2.6  
3
kΩ  
R2/R1  
CC  
collector capacitance  
VCB = -10 V; IE = 0 A; ie = 0 A;  
f = 1 MHz; Tamb = 25 °C  
pF  
[1]  
fT  
transition frequency  
VCE = -5 V; IC = -10 mA; f = 100 MHz;  
Tamb = 25 °C  
-
180  
-
MHz  
[1] Characteristics of built-in transistor.  
PDTA143XMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 1 June 2012  
4 of 11  
PDTA143XMB  
NXP Semiconductors  
PNP resistor-equipped transistor; R1 = 4.7 k, R2 = 10 kΩ  
006aac846  
006aac847  
3
10  
-1  
(1)  
h
FE  
(2)  
(3)  
V
CEsat  
(V)  
2
10  
-1  
-10  
(1)  
(2)  
10  
(3)  
-2  
1
-10  
-10  
-1  
2
2
-1  
-10  
-10  
-1  
-10  
-10  
I
C
(mA)  
I (mA)  
C
VCE = -5 V  
IC/IB = 20  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = -40 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = -40 °C  
Fig 4. DC current gain as a function of collector  
current; typical values  
Fig 5. Collector-emitter saturation voltage as a  
function of collector current; typical values  
006aac848  
006aac849  
-10  
-10  
V
V
I(off)  
I(on)  
(V)  
(V)  
(1)  
(1)  
(2)  
-1  
-1  
(2)  
(3)  
(3)  
-1  
-1  
-10  
-10  
-1  
2
-1  
-10  
-1  
-10  
-10  
-10  
-1  
-10  
I
C
(mA)  
I (mA)  
C
VCE = -0.3 V  
V
CE = -5 V  
(1) Tamb = -40 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
(1) Tamb = -40 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
Fig 6. On-state input voltage as a function of collector  
current; typical values  
Fig 7. Off-state input voltage as a function of collector  
current; typical values  
PDTA143XMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 1 June 2012  
5 of 11  
PDTA143XMB  
NXP Semiconductors  
PNP resistor-equipped transistor; R1 = 4.7 k, R2 = 10 kΩ  
006aac850  
006aac763  
3
8
10  
C
c
(pF)  
f
T
6
4
2
0
(MHz)  
2
10  
10  
-10  
-1  
2
0
-10  
-20  
-30  
-40  
V
-50  
(V)  
-1  
-10  
-10  
I (mA)  
C
CB  
f = 1 MHz; Tamb = 25 °C  
VCE = -5 V; Tamb = 25 °C  
Fig 8. Collector capacitance as a function of  
collector-base voltage; typical values  
Fig 9. Transition frequency as a function of collector  
current; typical values of built-in transistor  
8. Test information  
8.1 Quality information  
This product has been qualified in accordance with the Automotive Electronics Council  
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is  
suitable for use in automotive applications.  
PDTA143XMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 1 June 2012  
6 of 11  
PDTA143XMB  
NXP Semiconductors  
PNP resistor-equipped transistor; R1 = 4.7 k, R2 = 10 kΩ  
9. Package outline  
0.65  
0.55  
0.40  
0.34  
0.35  
0.20  
0.04 max  
0.12  
1
2
0.30  
0.22  
1.05  
0.95  
0.65  
0.30  
0.22  
3
0.55  
0.47  
Dimensions in mm  
11-11-02  
Fig 10. Package outline SOT883B (DFN1006B-3)  
10. Soldering  
Footprint information for reflow soldering  
SOT883B  
1.3  
0.7  
R0.05 (8x)  
0.9  
0.6 0.7  
0.25  
(2x)  
0.3  
(2x)  
0.3  
0.4  
0.4  
(2x)  
solder land  
solder land plus solder paste  
solder paste deposit  
occupied area  
solder resist  
Dimensions in mm  
sot883b_fr  
Fig 11. Reflow soldering footprint for SOT883B (DFN1006B-3)  
PDTA143XMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 1 June 2012  
7 of 11  
PDTA143XMB  
NXP Semiconductors  
PNP resistor-equipped transistor; R1 = 4.7 k, R2 = 10 kΩ  
11. Revision history  
Table 8.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
PDTA143XMB v.1  
20120601  
Product data sheet  
-
-
PDTA143XMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 1 June 2012  
8 of 11  
PDTA143XMB  
NXP Semiconductors  
PNP resistor-equipped transistor; R1 = 4.7 k, R2 = 10 kΩ  
12. Legal information  
12.1 Data sheet status  
Document status[1] [2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term 'short data sheet' is explained in section "Definitions".  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product  
status information is available on the Internet at URLhttp://www.nxp.com.  
Right to make changes — NXP Semiconductors reserves the right to make  
12.2 Definitions  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Preview — The document is a preview version only. The document is still  
subject to formal approval, which may result in modifications or additions.  
NXP Semiconductors does not give any representations or warranties as to  
the accuracy or completeness of information included herein and shall have  
no liability for the consequences of use of such information.  
Suitability for use in automotive applications — This NXP  
Semiconductors product has been qualified for use in automotive  
applications. Unless otherwise agreed in writing, the product is not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer's own  
risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
12.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with theTerms and conditions of commercial sale of NXP Semiconductors.  
PDTA143XMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 1 June 2012  
9 of 11  
PDTA143XMB  
NXP Semiconductors  
PNP resistor-equipped transistor; R1 = 4.7 k, R2 = 10 kΩ  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
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applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G  
reenChip,HiPerSmart,HITAG,I²C-bus  
logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE  
Ultralight,MoReUse,QLPAK,Silicon  
Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia  
andUCODE — are trademarks of NXP B.V.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
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HD Radio andHD Radio logo — are trademarks of iBiquity Digital  
Corporation.  
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be subject to export control regulations. Export might require a prior  
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13. Contact information  
For more information, please visit:http://www.nxp.com  
For sales office addresses, please send an email to:salesaddresses@nxp.com  
PDTA143XMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 1 June 2012  
10 of 11  
PDTA143XMB  
NXP Semiconductors  
PNP resistor-equipped transistor; R1 = 4.7 k, R2 = 10 kΩ  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
General description . . . . . . . . . . . . . . . . . . . . . .1  
Features and benefits. . . . . . . . . . . . . . . . . . . . .1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
Quick reference data . . . . . . . . . . . . . . . . . . . . .1  
1.1  
1.2  
1.3  
1.4  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2  
Ordering information. . . . . . . . . . . . . . . . . . . . . .2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3  
Thermal characteristics . . . . . . . . . . . . . . . . . . .3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .4  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . .6  
Quality information . . . . . . . . . . . . . . . . . . . . . . .6  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .8  
3
4
5
6
7
8
8.1  
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . .9  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10  
12.1  
12.2  
12.3  
12.4  
13  
Contact information. . . . . . . . . . . . . . . . . . . . . .10  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2012.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 1 June 2012  
Document identifier: PDTA143XMB  

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