PDTC124EU [NEXPERIA]
50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩProduction;
| 型号： | PDTC124EU |
| 厂家： | 
Nexperia |
| 描述： | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩProduction PC 开关 光电二极管 晶体管 |
| 文件： | 总18页 (文件大小：830K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PDTC124E series
NPN resistor-equipped transistors;
R1 = 22 k, R2 = 22 k
Rev. 8 — 28 November 2011
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Type number
Package
NXP
PNP
complement
Package
configuration
JEITA
SC-75
SC-101
-
JEDEC
PDTC124EE
PDTC124EM
PDTC124ET
PDTC124EU
SOT416
SOT883
SOT23
SOT323
-
-
PDTA124EE
PDTA124EM
ultra small
leadless ultra small
small
TO-236AB PDTA124ET
PDTA124EU
SC-70
-
very small
1.2 Features and benefits
100 mA output current capability
Built-in bias resistors
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
Simplifies circuit design
1.3 Applications
Digital applications in automotive and
industrial segments
Cost-saving alternative for BC847/857
series in digital applications
Switching loads
Control of IC inputs
1.4 Quick reference data
Table 2.
Symbol
VCEO
IO
Quick reference data
Parameter
Conditions
Min
-
Typ
Max
50
Unit
V
collector-emitter voltage
output current
open base
-
-
-
100
28.6
1.2
mA
k
R1
bias resistor 1 (input)
bias resistor ratio
15.4
0.8
22
1
R2/R1
PDTC124E series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
2. Pinning information
Table 3.
Pin
Pinning
Description
Simplified outline
Graphic symbol
SOT23; SOT323; SOT416
1
2
3
input (base)
3
3
2
GND (emitter)
output (collector)
R1
1
R2
1
2
006aaa144
sym007
SOT883
1
2
3
input (base)
1
2
3
2
GND (emitter)
output (collector)
3
R1
1
Transparent
top view
R2
sym007
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
plastic surface-mounted package; 3 leads
Version
PDTC124EE
PDTC124EM
SC-75
SOT416
SC-101
leadless ultra small plastic package; 3 solder lands; SOT883
body 1.0 0.6 0.5 mm
PDTC124ET
PDTC124EU
-
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 3 leads
SOT23
SC-70
SOT323
4. Marking
Table 5.
Marking codes
Type number
PDTC124EE
PDTC124EM
PDTC124ET
PDTC124EU
Marking code[1]
06
DX
*17
*06
[1] * = placeholder for manufacturing site code
PDTC124E_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 28 November 2011
2 of 17
PDTC124E series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
VI
Parameter
Conditions
open emitter
open base
Min
Max
50
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
-
-
-
50
V
open collector
10
V
positive
-
-
-
-
+40
10
100
100
V
negative
V
IO
output current
mA
mA
ICM
peak collector current
single pulse;
tp 1 ms
Ptot
total power dissipation
PDTC124EE (SOT416)
PDTC124EM (SOT883)
PDTC124ET (SOT23)
PDTC124EU (SOT323)
junction temperature
ambient temperature
storage temperature
Tamb 25 C
[1][2]
[2][3]
[1]
-
150
250
250
200
150
+150
+150
mW
mW
mW
mW
C
-
-
[1]
-
Tj
-
Tamb
Tstg
65
65
C
C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.
PDTC124E_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 28 November 2011
3 of 17
PDTC124E series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
006aac778
300
tot
(1)
P
(mW)
(2)
(3)
200
100
0
-75
-25
25
75
125
175
(°C)
T
amb
(1) SOT23; FR4 PCB, standard footprint
SOT883; FR4 PCB with 70 m copper strip line, standard footprint
(2) SOT323; FR4 PCB, standard footprint
(3) SOT416; FR4 PCB, standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
Table 7.
Thermal characteristics
Parameter
Symbol
Conditions
Min Typ Max Unit
Rth(j-a)
thermal resistance from junction in free air
to ambient
[1][2]
[2][3]
[1]
PDTC124EE (SOT416)
PDTC124EM (SOT883)
PDTC124ET (SOT23)
PDTC124EU (SOT323)
-
-
-
-
-
-
-
-
830
500
500
625
K/W
K/W
K/W
K/W
[1]
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.
PDTC124E_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 28 November 2011
4 of 17
PDTC124E series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
006aac781
3
10
duty cycle = 1
Z
0.75
0.33
th(j-a)
(K/W)
0.5
0.2
2
10
0.1
0.02
0
0.05
0.01
10
1
10
-5
-4
-3
-2
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTC124EE (SOT416); typical values
006aac782
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
2
0.33
0.2
10
0.1
0.05
0.02
10
0.01
0
1
10
-5
-4
-3
-2
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, 70 m copper strip line
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTC124EM (SOT883); typical values
PDTC124E_SER
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 28 November 2011
5 of 17
PDTC124E series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
006aac779
3
10
duty cycle = 1
Z
th(j-a)
0.75
(K/W)
0.5
0.2
0.33
2
10
0.1
0.05
0.01
0.02
0
10
1
10
-5
-4
-3
-2
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTC124ET (SOT23); typical values
006aac780
3
10
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
0.2
0.33
2
10
0.1
0.02
0
0.05
0.01
10
1
10
-5
-4
-3
-2
-1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTC124EU (SOT323); typical values
PDTC124E_SER
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 28 November 2011
6 of 17
PDTC124E series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
7. Characteristics
Table 8.
Characteristics
T
amb = 25 C unless otherwise specified.
Symbol Parameter Conditions
Min
Typ
Max
Unit
ICBO
ICEO
collector-base cut-off VCB = 50 V; IE = 0 A
current
-
-
100
nA
collector-emitter
cut-off current
VCE = 30 V; IB = 0 A
-
-
-
-
100
5
nA
VCE = 30 V; IB = 0 A;
A
Tj = 150 C
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
180
A
hFE
DC current gain
VCE = 5 V; IC = 5 mA
60
-
-
-
-
VCEsat
collector-emitter
IC = 10 mA; IB = 0.5 mA
150
mV
saturation voltage
VI(off)
VI(on)
R1
off-state input voltage VCE = 5 V; IC = 100 A
on-state input voltage VCE = 0.3 V; IC = 5 mA
bias resistor 1 (input)
-
1.1
1.7
22
1
0.8
-
V
2.5
15.4
0.8
-
V
28.6
1.2
2.5
k
R2/R1
Cc
bias resistor ratio
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
-
pF
[1]
fT
transition frequency
VCE = 5 V; IC = 10 mA;
f = 100 MHz
-
230
-
MHz
[1] Characteristics of built-in transistor
PDTC124E_SER
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 28 November 2011
7 of 17
PDTC124E series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
006aac794
006aac795
3
10
1
h
FE
(1)
V
CEsat
(V)
(2)
(3)
2
10
-1
10
(1)
(2)
(3)
10
-2
1
10
10
-1
2
-1
2
1
10
10
10
1
10
10
I
C
(mA)
I (mA)
C
VCE = 5 V
amb = 100 C
IC/IB = 20
(1) Tamb = 100 C
(1)
T
(2) Tamb = 25 C
(3) Tamb = 40 C
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 6. DC current gain as a function of collector
current; typical values
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
006aac796
006aac797
10
10
V
V
I(off)
I(on)
(V)
(V)
(1)
(2)
(1)
(2)
(3)
(3)
1
1
-1
-1
10
10
-1
2
-1
10
1
10
10
10
1
10
I
C
(mA)
I (mA)
C
VCE = 0.3 V
(1) Tamb = 40 C
(2) amb = 25 C
(3) Tamb = 100 C
VCE = 5 V
(1) Tamb = 40 C
(2) amb = 25 C
(3) Tamb = 100 C
T
T
Fig 8. On-state input voltage as a function of
collector current; typical values
Fig 9. Off-state input voltage as a function of
collector current; typical values
PDTC124E_SER
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 28 November 2011
8 of 17
PDTC124E series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
006aac798
006aac757
3
3
10
C
c
(pF)
f
T
(MHz)
2
1
0
2
10
10
10
-1
2
0
10
20
30
40
V
50
(V)
1
10
10
I (mA)
C
CB
f = 1 MHz; Tamb = 25 C
VCE = 5 V; Tamb = 25 C
Fig 10. Collector capacitance as a function of
collector-base voltage; typical values
Fig 11. Transition frequency as a function of collector
current; typical values of built-in transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PDTC124E_SER
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 28 November 2011
9 of 17
PDTC124E series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
9. Package outline
0.62
0.55
0.55
0.47
1.8
1.4
0.95
0.60
0.50
0.46
3
0.45
0.15
3
0.30
0.22
1.75 0.9
1.45 0.7
1.02
0.95
0.65
0.30
0.22
2
1
1
2
0.30
0.15
0.25
0.10
0.20
0.12
1
0.35
Dimensions in mm
04-11-04
Dimensions in mm
03-04-03
Fig 12. Package outline PDTC124EE (SOT416/SC-75)
Fig 13. Package outline PDTC124EM (SOT883/SC-101)
3.0
2.8
1.1
0.9
2.2
1.8
1.1
0.8
0.45
0.15
3
3
0.45
0.15
2.5 1.4
2.1 1.2
2.2 1.35
2.0 1.15
1
2
1
2
0.4
0.3
0.25
0.10
0.48
0.38
0.15
0.09
1.9
1.3
Dimensions in mm
04-11-04
Dimensions in mm
04-11-04
Fig 14. Package outline PDTC124ET (SOT23)
Fig 15. Package outline PDTC124EU (SOT323/SC-70)
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
-115
-
5000
10000
-135
-315
-235
-135
PDTC124EE
PDTC124EM
PDTC124ET
PDTC124EU
SOT416
SOT883
SOT23
4 mm pitch, 8 mm tape and reel
2 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
-
-
-
-
-215
-115
SOT323
[1] For further information and the availability of packing methods, see Section 14.
PDTC124E_SER
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 28 November 2011
10 of 17
PDTC124E series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
11. Soldering
2.2
1.7
solder lands
solder resist
1
0.85
2
solder paste
0.5
(3×)
occupied area
Dimensions in mm
0.6
(3×)
1.3
sot416_fr
Reflow soldering is the only recommended soldering method.
Fig 16. Reflow soldering footprint PDTC124EE (SOT416/SC-75)
1.3
0.7
R0.05 (12×)
solder lands
solder resist
0.9
0.6 0.7
solder paste
0.25
(2×)
occupied area
0.3
(2×)
0.4
(2×)
0.3
0.4
Dimensions in mm
sot883_fr
Reflow soldering is the only recommended soldering method.
Fig 17. Reflow soldering footprint PDTC124EM (SOT883/SC-101)
PDTC124E_SER
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 28 November 2011
11 of 17
PDTC124E series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 18. Reflow soldering footprint PDTC124ET (SOT23)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
occupied area
2.6
4.6
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 19. Wave soldering footprint PDTC124ET (SOT23)
PDTC124E_SER
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 28 November 2011
12 of 17
PDTC124E series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
2.65
1.85
1.325
solder lands
2
1
solder resist
3
0.6
(3×)
solder paste
1.3
2.35
occupied area
0.5
(3×)
Dimensions in mm
0.55
(3×)
sot323_fr
Fig 20. Reflow soldering footprint PDTC124EU (SOT323/SC-70)
4.6
2.575
1.425
(3×)
solder lands
solder resist
occupied area
1.8
3.65 2.1
Dimensions in mm
preferred transport
direction during soldering
09
(2×)
sot323_fw
Fig 21. Wave soldering footprint PDTC124EU (SOT323/SC-70)
PDTC124E_SER
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 28 November 2011
13 of 17
PDTC124E series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
12. Revision history
Table 10. Revision history
Document ID
Release date
20111128
Data sheet status
Change notice
Supersedes
PDTC124E_SER v.8
Modifications:
Product data sheet
-
PDTC124E_SERIES v.7
• The format of this document has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type numbers PDTC124EEF, PDTC124EK and PDTC124ES removed.
• Section 1 “Product profile”: updated
• Section 3 “Ordering information”: added
• Figure 1 to 11: added
• Table 6 “Limiting values”: updated
• Section 6 “Thermal characteristics”: updated
• Table 8 “Characteristics”: Vi(on) redefined to VI(on) on-state input voltage, Vi(off) redefined to
VI(off) off-state input voltage, ICEO updated, fT added
• Section 8 “Test information”: added
• Section 9 “Package outline”: superseded by minimized package outline drawings
• Section 10 “Packing information”: added
• Section 11 “Soldering”: added
• Section 13 “Legal information”: updated
PDTC124E_SERIES v.7 20040817
Product data sheet
-
-
PDTC124E_SERIES v.6
-
PDTC124E_SERIES v.6 20030414
Product specification
PDTC124E_SER
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 28 November 2011
14 of 17
PDTC124E series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
13.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
13.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
PDTC124E_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 28 November 2011
15 of 17
PDTC124E series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PDTC124E_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 28 November 2011
16 of 17
PDTC124E series
NXP Semiconductors
NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
Quality information . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 November 2011
Document identifier: PDTC124E_SER
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