PESD5V0F1BL-Q [NEXPERIA]

Femtofarad bidirectional ESD protection diodeProduction;


型号：	PESD5V0F1BL-Q
厂家：	Nexperia
描述：	Femtofarad bidirectional ESD protection diodeProduction
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中文：	中文翻译
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PESD5V0F1BL-Q

Femtofarad bidirectional ESD protection diode

10 June 2022

Product data sheet

1. General description

Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small

SOD882 Surface-Mounted Device (SMD) plastic package designed to protect one signal line from

the damage caused by ESD and other transients. The combination of extremely low capacitance,

high ESD maximum rating and ultra small package makes the device ideal for high-speed data line

protection and antenna protection applications.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

Femtofarad capacitance: C_d= 400 fF

Low ESD clamping voltage: 30 V at 30 ns and ± 8 kV

Very low leakage current: I_RM< 1 nA

ESD protection up to 10 kV

IEC 61000-4-2; level 4 (ESD)

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

10/100/1000 Mbit/s Ethernet

Portable electronics

FireWire

Communication systems

High-speed data lines

Computers and peripherals

Subscriber Identity Module (SIM) card protection

Audio and video equipment

Cellular handsets and accessories

Antenna protection

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

5.5

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

0.4

0.55

Nexperia

PESD5V0F1BL-Q

Femtofarad bidirectional ESD protection diode

5. Pinning information

Table 2. Pinning information

Symbol

Description

Simplified outline

Graphic symbol

cathode (diode 1)

cathode (diode 2)

Transparent

top view

sym045

DFN1006-2 (SOD882)

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

PESD5V0F1BL-Q

DFN1006-2

plastic, leadless ultra small package; 2 terminals; 0.65 mm SOD882

pitch; 1 mm x 0.6 mm x 0.48 mm body

7. Marking

Table 4. Marking codes

Type number

Marking code

PESD5V0F1BL-Q

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Product data sheet

10 June 2022

2 / 11

Nexperia

PESD5V0F1BL-Q

Femtofarad bidirectional ESD protection diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

I_PPM

T_j

Parameter

Conditions

Min

Max

2.5

Unit

rated peak pulse current t_p= 8/20 µs

junction temperature

[1]

[2]

125

°C

T_amb

T_stg

ambient temperature

-40

-55

storage temperature

ESD maximum ratings

V_ESDelectrostatic discharge

voltage

IEC 61000-4-2; contact discharge

MIL-STD-883; human body model (HBM) [2]

[1] Non-repetitive current pulse 8/20 #s exponential decay waveform according to IEC 61000-4-5.

[2] Device stressed with ten non-repetitive ESD pulses.

001aaa630

120

100 %

90 %

100 % I ; 8 µs

(%)

-t

50 % I ; 20 µs

10 %

t = 0.6 ns to 1 ns

30 ns

60 ns

t (µs)

001aaa631

Fig. 2. ESD pulse waveform according to

IEC 61000-4-2

Fig. 1. 8/20 µs pulse waveform according to

IEC 61000-4-5

PESD5V0F1BL-Q

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Product data sheet

10 June 2022

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Nexperia

PESD5V0F1BL-Q

Femtofarad bidirectional ESD protection diode

9. Characteristics

Table 6. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

5.5

V_BR

I_RM

C_d

breakdown voltage

I_R= 1 mA; T_amb= 25 °C

0.4

reverse leakage current V_RWM= 5 V; T_amb= 25 °C

100

0.55

diode capacitance

clamping voltage

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

I_PP= 1 A; T_amb= 25 °C

V_CL

[1]

I_PPM= 2.5 A; T_amb= 25 °C

I_R= 20 mA; T_amb= 25 °C

R_diff

differential resistance

[1] Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5.

006aab598

PPM

0.5

(pF)

0.4

-V

BR RWM

-I

RWM BR CL

0.3

0.2

- 6.0

-I

- 2.0

2.0

6.0

(V)

006aab325

PPM

f = 1 MHz; T_amb= 25 °C

Fig. 4. V-I characteristics for a bidirectional ESD

protection diode

Fig. 3. Diode capacitance as a function of reverse

voltage; typical values

PESD5V0F1BL-Q

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Product data sheet

10 June 2022

4 / 11

Nexperia

PESD5V0F1BL-Q

Femtofarad bidirectional ESD protection diode

ESD TESTER

4 GHz DIGITAL

OSCILLOSCOPE

RG 223/U

50 Ω coax

40 dB

ATTENUATOR

50 Ω

DUT

(DEVICE

UNDER

TEST)

IEC 61000-4-2 ed.2 network

= 150 pF; R = 330 Ω

vertical scale = 2 kV/div

vertical scale = 50 V/div

horizontal scale = 15 ns/div

GND

unclamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network)

clamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network) pin 1 to 2

vertical scale = 2 kV/div

horizontal scale = 15 ns/div

GND

vertical scale = 50 V/div

horizontal scale = 15 ns/div

unclamped -8 kV ESD pulse waveform

(IEC 61000-4-2 network)

clamped -8 kV ESD pulse waveform

(IEC 61000-4-2 network) pin 1 to 2

006aab599

Fig. 5. ESD clamping test setup and waveforms

PESD5V0F1BL-Q

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Product data sheet

10 June 2022

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Nexperia

PESD5V0F1BL-Q

Femtofarad bidirectional ESD protection diode

10. Application information

The device is designed for the protection of one bidirectional data or signal line from the damage

caused by ESD and surge pulses. The device may be used on lines where the signal polarities are

both, positive and negative with respect to ground.

ANTENNA

GPS

ESD protection

diode

GND

006aab600

Fig. 6. Application diagram

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge

transients. The following guidelines are recommended:

1. Place the device as close to the input terminal or connector as possible.

2. Minimize the path length between the device and the protected line.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.

11. Test information

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

PESD5V0F1BL-Q

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Product data sheet

10 June 2022

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Nexperia

PESD5V0F1BL-Q

Femtofarad bidirectional ESD protection diode

12. Package outline

DFN1006-2: Plastic, leadless ultra small package; 2 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.48 mm body

SOD882

(2)

0.5

scale

1 mm

Dimensions (mm are the original dimensions)

(1)

Unit

max 0.50 0.03 0.55 0.62 1.02

mm nom

min 0.46

0.30

0.22

0.65

0.47 0.55 0.95

Note

1. Including plating thickness

2. The marking bar indicates the cathode (if applicable)

sod882_po

References

Outline

version

European

projection

Issue date

IEC

JEDEC

JEITA

14-08-27

19-10-21

SOD882

Fig. 7. Package outline DFN1006-2 (SOD882)

PESD5V0F1BL-Q

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Product data sheet

10 June 2022

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Nexperia

PESD5V0F1BL-Q

Femtofarad bidirectional ESD protection diode

13. Soldering

1.3

0.7

R0.05 (8×)

solder lands

solder resist

0.6 0.7 0.8

(2×) (2×) (2×)

0.9

solder paste

occupied area

0.3

(2×)

Dimensions in mm

0.4

(2×)

0.5

sod882_fr

(2×)

Fig. 8. Reflow soldering footprint for DFN1006-2 (SOD882)

PESD5V0F1BL-Q

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Product data sheet

10 June 2022

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Nexperia

PESD5V0F1BL-Q

Femtofarad bidirectional ESD protection diode

14. Revision history

Table 7. Revision history

Data sheet ID

Release date

Data sheet status

Change notice

Supersedes

PESD5V0F1BL-Q v.1 20220610

Product data sheet

PESD5V0F1BL-Q

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Product data sheet

10 June 2022

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Nexperia

PESD5V0F1BL-Q

Femtofarad bidirectional ESD protection diode

equipment, nor in applications where failure or malfunction of an Nexperia

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15. Legal information

Data sheet status

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Document status Product

Definition

[1][2]

status [3]

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Qualification

Production

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data sheet

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PESD5V0F1BL-Q

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Product data sheet

10 June 2022

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Nexperia

PESD5V0F1BL-Q

Femtofarad bidirectional ESD protection diode

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking..........................................................................2

8. Limiting values............................................................. 3

9. Characteristics..............................................................4

10. Application information............................................. 6

11. Test information..........................................................6

12. Package outline.......................................................... 7

13. Soldering..................................................................... 8

14. Revision history..........................................................9

15. Legal information......................................................10

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 10 June 2022

PESD5V0F1BL-Q

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Product data sheet

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PESD5V0F1BL-Q [NEXPERIA]

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