PHB45NQ15T [NEXPERIA]
N-channel TrenchMOS standard level FETProduction;型号: | PHB45NQ15T |
厂家: | Nexperia |
描述: | N-channel TrenchMOS standard level FETProduction 开关 脉冲 晶体管 |
文件: | 总13页 (文件大小:685K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PHB45NQ15T
N-channel TrenchMOS standard level FET
Rev. 02 — 2 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low
Simple gate drive required due to low
thermal resistance
gate charge
Low conduction losses due to low
Suitable for high frequency
applications due to fast switching
characteristics
on-state resistance
1.3 Applications
AC-to-DC secondary side rectification
DC-to-DC converters
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
Min
Typ
Max Unit
VDS
ID
-
-
-
-
150
V
A
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 3; see Figure 1
45.1
Dynamic characteristics
QGD gate-drain charge
VGS = 10 V; ID = 25 A;
VDS = 75 V; Tj = 25 °C;
see Figure 11
-
-
10.3
34
-
nC
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 20 A;
Tj = 25 °C; see Figure 9;
see Figure 10
42
mΩ
on-state resistance
PHB45NQ15T
Nexperia
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
G
D
S
D
gate
mb
D
2
drain
source
3
G
mb
mounting base; connected to
drain
mbb076
S
2
1
3
SOT404
(D2PAK)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PHB45NQ15T
D2PAK
plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
SOT404
PHB45NQ15T_2
Product data sheet
Rev. 02 — 2 February 2009
2 of 13
©
Nexperia B.V. 2017. All rights reserved
PHB45NQ15T
Nexperia
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
150
150
20
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
VDGR
VGS
-
V
-20
V
ID
VGS = 10 V; Tmb = 100 °C; see Figure 1
-
-
31.9
45.1
A
VGS = 10 V; Tmb = 25 °C; see Figure 3;
see Figure 1
A
IDM
Ptot
Tstg
Tj
peak drain current
tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3
-
90.2
230
175
175
A
total power dissipation Tmb = 25 °C; see Figure 2
storage temperature
-
W
°C
°C
-55
-55
junction temperature
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
45.1
90.2
A
A
ISM
tp ≤ 10 µs; pulsed; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 19.1 A;
-
180
mJ
drain-source avalanche Vsup ≤ 150 V; RGS = 50 Ω; tp = 0.1 ms; unclamped
energy
03aa24
03aa16
120
120
I
P
der
der
(%)
(%)
80
80
40
40
0
0
0
50
100
150
200
0
50
100
150
200
T
mb
(°C)
T
mb
(°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PHB45NQ15T_2
Product data sheet
Rev. 02 — 2 February 2009
3 of 13
©
Nexperia B.V. 2017. All rights reserved
PHB45NQ15T
Nexperia
N-channel TrenchMOS standard level FET
03ao18
102
t = 10
p
s
μ
ID
(A)
Limit RDSon = VDS / ID
100
s
μ
10
DC
1 ms
10 ms
1
1
10
102
103
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PHB45NQ15T_2
Product data sheet
Rev. 02 — 2 February 2009
4 of 13
©
Nexperia B.V. 2017. All rights reserved
PHB45NQ15T
Nexperia
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from mounted on a printed-circuit board;
junction to ambient minimum footprint; vertical in still air
-
50
-
K/W
Rth(j-mb)
thermal resistance from see Figure 4
junction to mounting
base
-
-
0.65
K/W
03ao17
10
Zth(j-mb)
(K/W)
1
= 0.5
δ
0.2
10-1
0.1
0.05
0.02
tp
δ =
P
T
10-2
10-3
single pulse
t
tp
T
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PHB45NQ15T_2
Product data sheet
Rev. 02 — 2 February 2009
5 of 13
©
Nexperia B.V. 2017. All rights reserved
PHB45NQ15T
Nexperia
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
135
150
-
-
-
-
-
V
V
V
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = -55 °C;
4.4
voltage
see Figure 7; see Figure 8
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 7; see Figure 8
2
1
3
-
4
-
V
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 7; see Figure 8
IDSS
drain leakage current
gate leakage current
VDS = 120 V; VGS = 0 V; Tj = 25 °C
VDS = 120 V; VGS = 0 V; Tj = 175 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
-
1
µA
µA
nA
nA
-
100
100
100
IGSS
10
10
91.8
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 20 A; Tj = 175 °C;
see Figure 9; see Figure 10
113.4 mΩ
VGS = 10 V; ID = 20 A; Tj = 25 °C;
see Figure 9; see Figure 10
-
34
42
mΩ
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
ID = 25 A; VDS = 75 V; VGS = 10 V;
Tj = 25 °C; see Figure 11
-
-
-
-
-
-
32
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
5.6
10.3
1770
290
90
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 12
Coss
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 75 V; RL = 3 Ω; VGS = 10 V;
RG(ext) = 5.6 Ω; Tj = 25 °C
-
-
-
-
11.5
22
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
42
31
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 13
-
0.88
1.2
V
trr
reverse recovery time
recovered charge
IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 25 V; Tj = 25 °C
-
-
115
360
-
-
ns
Qr
nC
PHB45NQ15T_2
Product data sheet
Rev. 02 — 2 February 2009
6 of 13
©
Nexperia B.V. 2017. All rights reserved
PHB45NQ15T
Nexperia
N-channel TrenchMOS standard level FET
03ao19
03ao21
50
50
40
30
20
10
0
10 V 5 V
T = 25
j
C
°
4.8 V
VDS > ID x RDSon
ID
(A)
ID
(A)
40
4.6 V
4.4 V
30
20
10
0
4.2 V
4 V
T = 25
C
175
C
°
°
j
3.8 V
VGS = 3.6 V
0
1
2
3
4
0
2
4
6
V
DS (V)
V
GS (V)
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
03aa32
03aa35
−1
5
10
I
V
D
GS(th)
(V)
(A)
min
typ
max
−2
−3
−4
−5
−6
4
10
10
10
10
10
max
3
typ
2
min
1
0
−60
0
60
120
180
0
2
4
6
T (°C)
j
V
GS
(V)
Fig 8. Sub-threshold drain current as a function of
gate-source voltage
Fig 7. Gate-source threshold voltage as a function of
junction temperature
PHB45NQ15T_2
Product data sheet
Rev. 02 — 2 February 2009
7 of 13
©
Nexperia B.V. 2017. All rights reserved
PHB45NQ15T
Nexperia
N-channel TrenchMOS standard level FET
03ao20
03al51
80
3
2
1
0
T = 25
j
C
°
RDSon
(m
VGS = 4.4 V
4.6 V
4.8 V
a
)
Ω
60
40
20
0
5 V
10 V
0
10
20
30
40
50
−75
−25
25
75
125
175
ID (A)
T (°C)
j
Fig 9. Drain-source on-state resistance as a function
of drain current; typical values
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
03ao24
03ao23
10
104
ID = 25 A
T = 25
VGS
(V)
C
°
j
C
(pF)
8
6
4
2
0
Ciss
75 V
VDS = 30 V
103
120 V
Coss
102
Crss
10
0
10
20
30
40
10-1
1
10
102
VDS (V)
Q
G (nC)
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PHB45NQ15T_2
Product data sheet
Rev. 02 — 2 February 2009
8 of 13
©
Nexperia B.V. 2017. All rights reserved
PHB45NQ15T
Nexperia
N-channel TrenchMOS standard level FET
03ao22
50
VGS = 0 V
IS
(A)
40
30
20
10
0
T = 25
C
175
C
°
j
°
0
0.3
0.6
0.9
1.2
V
SD (V)
Fig 13. Source current as a function of source-drain voltage; typical values
PHB45NQ15T_2
Product data sheet
Rev. 02 — 2 February 2009
9 of 13
©
Nexperia B.V. 2017. All rights reserved
PHB45NQ15T
Nexperia
N-channel TrenchMOS standard level FET
7. Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
E
A
A
b
UNIT
c
D
e
L
H
Q
1
1
p
D
max.
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
1.60
1.20
10.30
9.70
2.90 15.80 2.60
2.10 14.80 2.20
mm
11
2.54
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
05-02-11
06-03-16
SOT404
Fig 14. Package outline SOT404 (D2PAK)
PHB45NQ15T_2
Product data sheet
Rev. 02 — 2 February 2009
10 of 13
©
Nexperia B.V. 2017. All rights reserved
PHB45NQ15T
Nexperia
N-channel TrenchMOS standard level FET
8. Revision history
Table 7.
Revision history
Document ID
PHB45NQ15T_2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20090202
Product data sheet
-
PHP_PHB45NQ15T_1
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
PHP_PHB45NQ15T_1
(9397 750 14012)
20041108
Product data sheet
-
-
PHB45NQ15T_2
Product data sheet
Rev. 02 — 2 February 2009
11 of 13
©
Nexperia B.V. 2017. All rights reserved
PHB45NQ15T
Nexperia
N-channel TrenchMOS standard level FET
9. Legal information
9.1 Data sheet status
Document status [1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.
Applications — Applications that are described herein for any of these
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — Nexperia products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nexperia.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by Nexperia. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Nexperia does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
10. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
PHB45NQ15T_2
Product data sheet
Rev. 02 — 2 February 2009
12 of 13
©
Nexperia B.V. 2017. All rights reserved
PHB45NQ15T
Nexperia
N-channel TrenchMOS standard level FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .12
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 02 February 2009
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