PHPT61002PYC [NEXPERIA]
100 V, 2 A PNP high power bipolar transistorProduction;
| 型号： | PHPT61002PYC |
| 厂家： | 
Nexperia |
| 描述： | 100 V, 2 A PNP high power bipolar transistorProduction |
| 文件： | 总15页 (文件大小：711K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PHPT61002PYC
100 V, 2 A PNP high power bipolar transistor
10 January 2014
Product data sheet
1. General description
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device
(SMD) power plastic package.
NPN complement: PHPT61002NYC.
2. Features and benefits
High thermal power dissipation capability
•
•
•
•
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
3. Applications
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
•
•
•
•
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
-100
V
IC
collector current
-
-
-
-
-2
A
ICM
peak collector current tp ≤ 1 ms; pulsed
-
-6
A
RCEsat
collector-emitter
IC = -2 A; IB = -200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
125
200
mΩ
saturation resistance
Nexperia
PHPT61002PYC
100 V, 2 A PNP high power bipolar transistor
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
C
1
E
E
E
B
C
emitter
emitter
emitter
base
2
B
3
E
sym132
4
1
2 3 4
mb
collector
LFPAK56; Power-
SO8 (SOT669)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PHPT61002PYC
LFPAK56;
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
SOT669
Power-SO8
7. Marking
Table 4.
Marking codes
Type number
Marking code
PHPT61002PYC
1002PCA
©
PHPT61002PYC
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 January 2014
2 / 15
Nexperia
PHPT61002PYC
100 V, 2 A PNP high power bipolar transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
-100
-100
-8
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
-
-
V
open collector
-
V
-
-2
A
ICM
peak collector current
base current
tp ≤ 1 ms; pulsed
Tamb ≤ 25 °C
-
-6
A
IB
-
-0.5
1.25
3
A
Ptot
total power dissipation
[1]
[2]
[3]
[4]
-
W
W
W
W
°C
°C
°C
-
-
5
-
25
Tj
junction temperature
ambient temperature
storage temperature
-
175
175
175
Tamb
Tstg
-55
-65
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[4] Power dissipation from junction to mounting base.
aaa-010424
8
P
tot
(W)
6
4
2
0
(1)
(2)
(3)
-75
25
125
225
T
(°C)
amb
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, standard footprint
Fig. 1. Power derating curves
©
PHPT61002PYC
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 January 2014
3 / 15
Nexperia
PHPT61002PYC
100 V, 2 A PNP high power bipolar transistor
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
115
50
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
[3]
-
-
-
-
-
-
-
-
30
Rth(j-sp)
thermal resistance
from junction to solder
point
6
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
aaa-010427
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
0
0.25
1
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PHPT61002PYC
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 January 2014
4 / 15
Nexperia
PHPT61002PYC
100 V, 2 A PNP high power bipolar transistor
aaa-010428
2
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.1
0.33
0.2
10
0.05
0.01
0.02
0
0.25
1
-2
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PHPT61002PYC
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 January 2014
5 / 15
Nexperia
PHPT61002PYC
100 V, 2 A PNP high power bipolar transistor
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
-100
-50
Unit
nA
ICBO
collector-base cut-off
current
VCB = -80 V; IE = 0 A; Tamb = 25 °C
VCB = -80 V; IE = 0 A; Tj = 150 °C
-
-
-
-
-
-
µA
ICES
IEBO
hFE
collector-emitter cut-off VCE = -80 V; VBE = 0 V; Tamb = 25 °C
current
-100
nA
emitter-base cut-off
current
VEB = -8 V; IC = 0 A; Tamb = 25 °C
-
-
-100
-
nA
DC current gain
VCE = -1.5 V; IC = -500 mA;
Tamb = 25 °C
100
150
VCE = -10 V; IC = -500 mA;
Tamb = 25 °C
150
220
210
100
-70
-
VCE = -10 V; IC = -1 A; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C; pulsed
80
20
-
-
VCE = -10 V; IC = -2 A; pulsed;
-
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCEsat
collector-emitter
IC = -500 mA; IB = -50 mA; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
-110
-400
200
mV
mV
mΩ
V
saturation voltage
IC = -2 A; IB = -200 mA; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C; pulsed
-
-250
125
RCEsat
VBEsat
VBEon
collector-emitter
IC = -2 A; IB = -200 mA; pulsed;
-
saturation resistance
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
base-emitter saturation IC = -2 A; IB = -200 mA; pulsed;
-
-1.02 -1.2
-0.67 -0.9
voltage
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
base-emitter turn-on
voltage
VCE = -2 V; IC = -0.1 A; Tamb = 25 °C
-
V
td
tr
delay time
VCC = -12.5 V; IC = -1 A; IBon = -50 mA;
IBoff = 50 mA; Tamb = 25 °C
-
-
-
-
-
-
-
20
-
-
-
-
-
-
-
ns
rise time
180
200
350
220
570
125
ns
ton
ts
turn-on time
storage time
fall time
ns
ns
tf
ns
toff
fT
turn-off time
transition frequency
ns
VCE = -10 V; IC = -100 mA;
f = 100 MHz; Tamb = 25 °C
MHz
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
28
-
pF
©
PHPT61002PYC
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 January 2014
6 / 15
Nexperia
PHPT61002PYC
100 V, 2 A PNP high power bipolar transistor
aaa-010430
aaa-010431
500
-2.5
-45
-40
-35
I
= -50 mA
B
h
I
C
(A)
FE
400
-2.0
(1)
(2)
-30
-25
-20
300
200
100
0
-1.5
-1.0
-0.5
0
-15
-10
-5
(3)
-1
-10
2
3
4
-1
-10
-10
-10
-10
(mA)
0
-1
-2
-3
-4
-5
I
C
V
(V)
CE
VCE = −1 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
Fig. 4. DC current gain as a function of collector
current; typical values
aaa-010432
aaa-010433
-1.6
-1.2
V
BEsat
(V)
V
BE
(V)
-1.0
-0.8
-0.6
-0.4
-0.2
-1.2
(1)
-0.8
-0.4
0
(1)
(2)
(3)
(2)
(3)
-1
-10
2
3
4
-1
-10
2
3
4
-1
-10
-10
-10
-10
(mA)
-1
-10
-10
-10
-10
I (mA)
C
I
C
VCE = −2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 6. Base-emitter voltage as a function of collector Fig. 7. Base-emitter saturation voltage as a function of
current; typical values collector current; typical values
©
PHPT61002PYC
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 January 2014
7 / 15
Nexperia
PHPT61002PYC
100 V, 2 A PNP high power bipolar transistor
aaa-010434
aaa-010440
-10
-10
V
V
CEsat
(V)
CEsat
(V)
-1
-1
-1
-2
-3
-1
-2
-3
-10
-10
-10
-10
-10
-10
(1)
(1)
(2)
(2)
(3)
(3)
-1
2
3
4
-1
2
3
4
-10
-1
-10
-10
-10
-10
(mA)
-10
-1
-10
-10
-10
-10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-010441
aaa-010442
3
3
10
10
R
CEsat
(Ω)
R
CEsat
(Ω)
2
2
10
10
10
10
1
1
(1)
(2)
(3)
(1)
(2)
-1
-1
10
10
10
10
(3)
-2
-2
-1
2
3
4
-1
2
3
4
-10
-1
-10
-10
-10
-10
(mA)
-10
-1
-10
-10
-10
-10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
©
PHPT61002PYC
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 January 2014
8 / 15
Nexperia
PHPT61002PYC
100 V, 2 A PNP high power bipolar transistor
11. Test information
-
I
B
input pulse
90 %
(idealized waveform)
-
I
(100 %)
Bon
10 %
-
I
Boff
output pulse
-
(idealized waveform)
I
C
90 %
-
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
006aaa266
t
t
off
on
Fig. 12. BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
450 Ω
(probe)
oscilloscope
450 Ω
oscilloscope
R2
V
DUT
I
R1
mgd624
Fig. 13. Test circuit for switching times
©
PHPT61002PYC
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 January 2014
9 / 15
Nexperia
PHPT61002PYC
100 V, 2 A PNP high power bipolar transistor
12. Package outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
SOT669
A
2
E
A
C
c
E
b
2
1
2
b
3
L
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
A
c
b
1/2 e
A
(A )
3
C
A
1
q
L
detail X
y
C
θ
8
0
0
5 mm
°
°
scale
Dimensions (mm are the original dimensions)
(1)
(1)
(1)
(1)
(1)
Unit
A
A
A
A
b
b
b
b
4
c
c
2
D
D
1
E
E
e
H
L
L
L
2
w
y
1
2
3
2
3
1
1
max 1.20 0.15 1.10
nom
min 1.01 0.00 0.95
0.50 4.41 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3
6.2 0.85 1.3 1.3
5.8 0.40 0.8 0.8
0.1
0.25
1.27
0.25
mm
0.35 3.62 2.0 0.7 0.19 0.24 3.80
4.8 3.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
sot669_po
References
Outline
version
European
projection
Issue date
11-03-25
IEC
JEDEC
JEITA
SOT669
MO-235
13-02-27
Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669)
©
PHPT61002PYC
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 January 2014
10 / 15
Nexperia
PHPT61002PYC
100 V, 2 A PNP high power bipolar transistor
13. Soldering
Footprint information for reflow soldering
SOT669
4.7
4.2
0.9
0.6
(3×)
(4×)
0.25
(2×)
0.25
(2×)
3.5
3.45
0.6
2.55
(3×)
2
0.25
(2×)
SR opening =
Cu + 0.075
1.1
2.15
3.3
SP opening =
Cu - 0.050
0.7
(4×)
1.27
3.81
solder paste
solder lands
125 µm stencil
occupied area
Dimensions in mm
solder resist
sot669_fr
Fig. 15. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669)
©
PHPT61002PYC
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 January 2014
11 / 15
Nexperia
PHPT61002PYC
100 V, 2 A PNP high power bipolar transistor
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PHPT61002PYC v.1
20140110
Product data sheet
-
-
©
PHPT61002PYC
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 January 2014
12 / 15
Nexperia
PHPT61002PYC
100 V, 2 A PNP high power bipolar transistor
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lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
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Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
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the accuracy or completeness of information included herein and shall have
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products in order to avoid a default of the applications
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short data sheet, the full data sheet shall prevail.
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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or construed as an offer to sell products that is open for acceptance or the
©
PHPT61002PYC
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 January 2014
13 / 15
Nexperia
PHPT61002PYC
100 V, 2 A PNP high power bipolar transistor
grant, conveyance or implication of any license under any copyrights, patents
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Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
Nexperia accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PHPT61002PYC
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 January 2014
14 / 15
Nexperia
PHPT61002PYC
100 V, 2 A PNP high power bipolar transistor
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................3
Thermal characteristics .........................................4
Characteristics .......................................................6
Test information .....................................................9
Package outline ................................................... 10
Soldering .............................................................. 11
Revision history ...................................................12
3
4
5
6
7
8
9
10
11
12
13
14
15
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
15.1
15.2
15.3
15.4
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 10 January 2014
©
PHPT61002PYC
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 January 2014
15 / 15
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