PMBD7100 [NEXPERIA]
High-speed double diodeProduction;
| 型号： | PMBD7100 |
| 厂家： | 
Nexperia |
| 描述： | High-speed double diodeProduction 光电二极管 |
| 文件： | 总11页 (文件大小：315K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PMBD7100
High-speed double diode
Product data sheet
2003 Nov 07
NXP Semiconductors
Product data sheet
High-speed double diode
PMBD7100
FEATURES
PINNING
PIN
• Small plastic SMD package
DESCRIPTION
anode (a1)
anode (a2)
common connection
• High switching speed: max. 4 ns
1
2
3
• Continuous reverse voltage: max. 100 V
• Repetitive peak reverse voltage: max. 100 V
• Repetitive peak forward current: max. 450 mA.
APPLICATIONS
• High-speed switching in thick and thin-film circuits.
3
handbook, halfpage
DESCRIPTION
3
The PMBD7100 consists of two high-speed switching
diodes with common cathodes, fabricated in planar
technology, and encapsulated in the small SOT23 SMD
plastic package.
1
2
1
2
MARKING
Top view
MAM383
TYPE NUMBER
PMBD7100
Note
MARKING CODE(1)
*3A
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
PMBD7100
−
2003 Nov 07
2
NXP Semiconductors
Product data sheet
High-speed double diode
PMBD7100
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
PARAMETER
CONDITIONS
MIN. MAX. UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
−
−
−
−
−
100
100
215
125
450
V
V
IF
single diode loaded; see Fig.2; note 1
double diode loaded; see Fig.2; note 1
mA
mA
mA
IFRM
IFSM
repetitive peak forward current
non-repetitive peak forward current
square wave; Tj = 25 °C prior to surge;
see Fig.4
tp = 1 µs
−
4
A
tp = 1 ms
−
1
A
tp = 1 s
−
0.5
250
+150
150
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Nov 07
3
NXP Semiconductors
Product data sheet
High-speed double diode
PMBD7100
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
see Fig.5
715
mV
855
1
mV
V
1.25
V
IR
reverse current
VR = 25 V
VR = 100 V
30
2.5
60
100
1.5
4
nA
µA
µA
µA
pF
ns
VR = 25 V; Tj = 150 °C
VR = 100 V; Tj = 150 °C
Cd
trr
diode capacitance
VR = 0 V; f = 1 MHz; see Fig.6
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
Vfr
forward recovery voltage
when switched from IF = 10 mA to tr = 20 nA; 1.75
see Fig.8
V
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
CONDITIONS
VALUE
360
UNIT
K/W
K/W
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient note 1
500
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Nov 07
4
NXP Semiconductors
Product data sheet
High-speed double diode
PMBD7100
GRAPHICAL DATA
MBD033
MDB820
300
300
handbook, halfpage
I
F
(mA)
I
F
250
(mA)
200
200
150
single diode loaded
double diode loaded
100
100
50
(1) (2)
(3)
0
0
0
0
100
200
o
0.5
1.0
1.5
2.0
(V)
V
T
( C)
amb
F
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
Device mounted on an FR4 printed-circuit board.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of
forward voltage.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Nov 07
5
NXP Semiconductors
Product data sheet
High-speed double diode
PMBD7100
MDB821
MDB822
2
10
0.8
handbook, halfpage
handbook, halfpage
I
R
(µA)
C
d
(pF)
0.6
(1)
10
(2)
(3)
1
0.4
0.2
-1
10
-2
10
−3
10
0
0
0
50
100
150
200
5
10
15
T (°C)
V
(V)
j
R
(1) VR = 100 °C; maximum values.
(2) VR = 100 °C; typical values.
(3)
V
R = 25 °C; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
2003 Nov 07
6
NXP Semiconductors
Product data sheet
High-speed double diode
PMBD7100
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
I
V
90%
R
= 50 Ω
S
OSCILLOSCOPE
V
fr
D.U.T.
R = 50 Ω
i
10%
MGA882
t
t
t
t
p
r
input
signal
output
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
7
2003 Nov 07
NXP Semiconductors
Product data sheet
High-speed double diode
PMBD7100
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2003 Nov 07
8
NXP Semiconductors
Product data sheet
High-speed double diode
PMBD7100
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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accepts no liability for inclusion and/or use of NXP
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Export control ⎯ This document as well as the item(s)
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Nov 07
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/01/pp10
Date of release: 2003 Nov 07
Document order number: 9397 750 12001
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