PMBT3946YPN [NEXPERIA]
40 V, 200 mA NPN/PNP general-purpose double transistorProduction;
| 型号： | PMBT3946YPN |
| 厂家： | 
Nexperia |
| 描述： | 40 V, 200 mA NPN/PNP general-purpose double transistorProduction 开关 光电二极管 晶体管 |
| 文件： | 总16页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
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Kind regards,
Team Nexperia
PMBT3946YPN
40 V, 200 mA NPN/PNP general-purpose double transistor
Rev. 01 — 12 May 2009
Product data sheet
1. Product profile
1.1 General description
NPN/PNP general-purpose double transistor in a SOT363 (SC-88) very small
Surface-Mounted Device (SMD) plastic package.
Table 1.
Product overview
Type number
Package
NXP
NPN/NPN
complement
PNP/PNP
complement
Package
configuration
JEITA
PMBT3946YPN SOT363
SC-88
PMBT3904YS PMBT3906YS very small
1.2 Features
I General-purpose double transistor
I Board-space reduction
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol Parameter
Per transistor; for the PNP transistor with negative polarity
Quick reference data
Conditions
Min
Typ
Max
Unit
VCEO
IC
collector-emitter voltage
collector current
open base
-
-
40
V
-
-
200
300
mA
hFE
DC current gain
VCE = 1 V;
IC = 10 mA
100
180
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
2. Pinning information
Table 3.
Pinning
Pin
1
Description
emitter TR1
base TR1
Simplified outline
Graphic symbol
6
5
4
6
5
4
2
3
collector TR2
emitter TR2
base TR2
TR2
TR1
4
1
2
3
5
1
2
3
6
collector TR1
sym019
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
PMBT3946YPN SC-88
plastic surface-mounted package; 6 leads
SOT363
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
PMBT3946YPN
BB*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PMBT3946YPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 12 May 2009
2 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
TR1 (NPN)
VCBO
Parameter
Conditions
open emitter
open emitter
Min
Max
60
Unit
V
collector-base voltage
collector-base voltage
-
-
TR2 (PNP)
VCBO
−40
V
Per transistor; for the PNP transistor with negative polarity
VCEO
VEBO
IC
collector-emitter voltage
emitter-base voltage
collector current
open base
-
-
-
-
40
V
open collector
6
V
200
200
mA
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
IBM
peak base current
single pulse;
tp ≤ 1 ms
-
-
100
230
mA
[1]
[1]
Ptot
total power dissipation
T
amb ≤ 25 °C
amb ≤ 25 °C
mW
Per device
Ptot
Tj
total power dissipation
junction temperature
ambient temperature
storage temperature
T
-
350
mW
°C
-
150
Tamb
Tstg
−55
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
006aab113
400
P
tot
(mW)
300
200
100
0
−75
−25
25
75
125
T
175
(°C)
amb
FR4 PCB, standard footprint
Fig 1. Per device: Power derating curve
PMBT3946YPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 12 May 2009
3 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
6. Thermal characteristics
Table 7.
Thermal characteristics
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
[1]
[1]
thermal resistance from in free air
junction to ambient
-
-
-
-
543
290
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
Per device
Rth(j-a)
thermal resistance from in free air
junction to ambient
-
-
357
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
006aab114
3
10
δ = 1
0.75
Z
th(j-a)
(K/W)
0.5
0.33
2
0.2
0.1
10
0.05
0.02
0.01
10
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PMBT3946YPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 12 May 2009
4 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
TR1 (NPN)
Conditions
Min
Typ
Max Unit
ICBO
IEBO
hFE
collector-base cut-off
current
VCB = 30 V; IE = 0 A
VEB = 6 V; IC = 0 A
-
-
-
-
50
50
nA
nA
emitter-base cut-off
current
DC current gain
VCE = 1 V
-
IC = 0.1 mA
60
80
100
60
30
-
180
180
180
105
50
-
IC = 1 mA
-
IC = 10 mA
300
-
IC = 50 mA
IC = 100 mA
-
VCEsat
collector-emitter
saturation voltage
IC = 10 mA; IB = 1 mA
IC = 50 mA; IB = 5 mA
75
200
300
850
950
-
mV
mV
mV
mV
MHz
-
120
750
850
-
VBEsat
base-emitter saturation IC = 10 mA; IB = 1 mA
650
-
voltage
IC = 50 mA; IB = 5 mA
fT
transition frequency
collector capacitance
emitter capacitance
noise figure
VCE = 20 V; IC = 10 mA;
f = 100 MHz
300
Cc
Ce
NF
VCB = 5 V; IE = ie = 0 A;
f = 1 MHz
-
-
-
-
-
-
4
8
5
pF
pF
dB
VBE = 0.5 V; IC = ic = 0 A;
f = 1 MHz
VCE = 5 V; IC = 100 µA;
RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
td
tr
delay time
rise time
VCC = 3 V; IC = 10 mA;
-
-
-
-
-
-
-
-
-
-
-
-
35
ns
ns
ns
ns
ns
ns
IBon = 1 mA; IBoff = −1 mA
35
ton
ts
turn-on time
storage time
fall time
70
200
50
tf
toff
turn-off time
250
PMBT3946YPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 12 May 2009
5 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
Table 8.
Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
TR2 (PNP)
Conditions
Min
Typ
Max Unit
ICBO
IEBO
hFE
collector-base cut-off
current
VCB = −30 V; IE = 0 A
VEB = −6 V; IC = 0 A
-
-
-
-
−50
−50
nA
nA
emitter-base cut-off
current
DC current gain
VCE = −1 V
IC = −0.1 mA
60
80
100
60
30
-
180
180
180
130
50
-
IC = −1 mA
-
IC = −10 mA
300
IC = −50 mA
-
-
IC = −100 mA
VCEsat
collector-emitter
saturation voltage
IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
−100 −250 mV
−165 −400 mV
−750 −850 mV
−850 −950 mV
-
VBEsat
base-emitter saturation IC = −10 mA; IB = −1 mA
-
voltage
IC = −50 mA; IB = −5 mA
-
fT
transition frequency
collector capacitance
emitter capacitance
noise figure
VCE = −20 V; IC = −10 mA;
f = 100 MHz
250
-
-
-
-
-
MHz
Cc
Ce
NF
VCB = −5 V; IE = ie = 0 A;
f = 1 MHz
-
-
-
4.5
10
4
pF
VCB = −0.5 V; IC = ic = 0 A;
f = 1 MHz
pF
VCE = −5 V; IC = −100 µA;
RS = 1 kΩ;
dB
f = 10 Hz to 15.7 kHz
td
tr
delay time
rise time
VCC = −3 V; IC = −10 mA;
-
-
-
-
-
-
-
-
-
-
-
-
35
ns
ns
ns
ns
ns
ns
IBon = −1 mA; IBoff = 1 mA
35
ton
ts
turn-on time
storage time
fall time
70
225
75
tf
toff
turn-off time
300
PMBT3946YPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 12 May 2009
6 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
006aab115
006aab116
600
0.20
I
(mA) = 5.0
B
4.5
3.5
2.5
I
C
h
FE
(A)
4.0
3.0
0.15
400
2.0
1.0
1.5
(1)
0.10
0.05
0.0
0.5
(2)
(3)
200
0
10
−1
2
3
1
10
10
10
0
2
4
6
8
10
(V)
I
(mA)
V
CE
C
VCE = 1 V
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. TR1 (NPN): DC current gain as a function of
collector current; typical values
Fig 4. TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
006aab117
006aab118
1.2
1.3
V
(V)
V
BE
BEsat
(V)
(1)
(2)
(1)
(2)
0.8
0.9
0.5
0.1
(3)
(3)
0.4
0
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
VCE = 1 V
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 5. TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
Fig 6. TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
PMBT3946YPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 12 May 2009
7 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
006aab119
1
V
CEsat
(V)
(1)
(2)
−1
10
(3)
−2
10
−1
2
3
10
1
10
10
10
I
(mA)
C
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 7. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current;
typical values
PMBT3946YPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 12 May 2009
8 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
006aab120
006aab121
400
−0.3
I
(mA) = −5.0
B
h
−4.5
−4.0
−3.5
−3.0
FE
(1)
I
C
(A)
−2.5
−2.0
300
−0.2
−1.5
−1.0
(2)
(3)
200
100
0
−0.1
−0.5
0
−1
2
3
−10
−1
−10
−10
−10
0
−2
−4
−6
−8
V
−10
(V)
I
(mA)
C
CE
VCE = −1 V
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 8. TR2 (PNP): DC current gain as a function of
collector current; typical values
Fig 9. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
006aab123
006aab124
−1.2
−1.2
V
(V)
V
BE
BEsat
(V)
−1.0
−1.0
−0.8
−0.6
−0.4
−0.2
(1)
(2)
(1)
(2)
−0.8
−0.6
−0.4
−0.2
(3)
(3)
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
−10
−1
−10
−10
−10
I
(mA)
I (mA)
C
C
VCE = −1 V
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 10. TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
Fig 11. TR2 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
PMBT3946YPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 12 May 2009
9 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
006aab122
−1
V
CEsat
(V)
(1)
−1
−10
(2)
(3)
−2
−10
−1
2
3
−10
−1
−10
−10
−10
I
(mA)
C
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 12. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current;
typical values
8. Test information
V
V
CC
BB
R
B
R
C
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
I
DUT
R1
mlb826
Fig 13. TR1 (NPN): Test circuit for switching times
PMBT3946YPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 12 May 2009
10 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
V
V
CC
BB
R
B
R
C
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
I
DUT
R1
mgd624
Fig 14. TR2 (PNP): Test circuit for switching times
9. Package outline
2.2
1.8
1.1
0.8
0.45
0.15
6
5
4
2.2 1.35
2.0 1.15
pin 1
index
1
2
3
0.25
0.10
0.3
0.2
0.65
1.3
Dimensions in mm
06-03-16
Fig 15. Package outline SOT363 (SC-88)
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
-115
-125
10000
-135
[2]
[3]
PMBT3946YPN SOT363
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-165
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
PMBT3946YPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 12 May 2009
11 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
11. Soldering
2.65
solder lands
0.4 (2×)
1.5
2.35
0.6
(4×)
0.5
(4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
occupied area
Dimensions in mm
0.6
(4×)
1.8
sot363_fr
Fig 16. Reflow soldering footprint SOT363 (SC-88)
1.5
solder lands
solder resist
occupied area
2.5
0.3
4.5
1.5
Dimensions in mm
preferred transport
direction during soldering
1.3
1.3
2.45
5.3
sot363_fw
Fig 17. Wave soldering footprint SOT363 (SC-88)
PMBT3946YPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 12 May 2009
12 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
12. Revision history
Table 10. Revision history
Document ID
Release date
20090512
Data sheet status
Change notice
Supersedes
PMBT3946YPN_1
Product data sheet
-
-
PMBT3946YPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 12 May 2009
13 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PMBT3946YPN_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 12 May 2009
14 of 15
PMBT3946YPN
NXP Semiconductors
40 V, 200 mA NPN/PNP general-purpose double transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information. . . . . . . . . . . . . . . . . . . . . . . . 10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing information. . . . . . . . . . . . . . . . . . . . . 11
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 May 2009
Document identifier: PMBT3946YPN_1
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