PMCM4402UPE [NEXPERIA]
20 V, P-channel Trench MOSFETProduction;
| 型号： | PMCM4402UPE |
| 厂家： | 
Nexperia |
| 描述： | 20 V, P-channel Trench MOSFETProduction |
| 文件： | 总15页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMCM4402UPE
20 V, P-channel Trench MOSFET
30 May 2017
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size
Package (WLCSP) using Trench MOSFET technology.
2. Features and benefits
•
Low threshold voltage
•
•
•
Ultra small package 0.78 x 0.78 x 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
•
•
•
•
Battery switch
High-speed line driver
High-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
-20
8
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-8
-
V
ID
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; ID = -3 A; Tj = 25 °C
[1]
-4.2
A
Static characteristics
RDSon drain-source on-state
resistance
-
65
80
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
PMCM4402UPE
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
A1
A2
B1
B2
Symbol Description
Simplified outline
Graphic symbol
1
2
D
G
S
D
S
gate
source
drain
A
B
G
source
S
Transparent top view
017aaa259
WLCSP4 (WLCSP4_2-2)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMCM4402UPE
WLCSP4
wafer level chip-size package; 4 bumps (2 x 2)
WLCSP4_2-2
7. Marking
Table 4. Marking codes
Type number
Marking code
PMCM4402UPE
U
2
PIN A1
INDICATION
MARKING CODE
(EXAMPLE)
1
A
B
Top view, balls down
aaa-012880
Fig. 1. WLCSP4 marking code description
©
PMCM4402UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 May 2017
2 / 15
Nexperia
PMCM4402UPE
20 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
-20
8
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-8
V
ID
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
[1]
-
-4.2
-3.3
-2.1
-13
400
1.3
A
-
A
-
A
IDM
Ptot
peak drain current
-
A
total power dissipation
[2]
[1]
-
mW
W
W
°C
°C
°C
-
Tsp = 25 °C
-
12.5
150
150
150
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
Tamb
Tstg
Source-drain diode
IS source current
Tamb = 25 °C
[1]
-
-1.2
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
017aaa123
017aaa124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 2. Normalized total power dissipation as a
function of junction temperature
Fig. 3. Normalized continuous drain current as a
function of junction temperature
©
PMCM4402UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 May 2017
3 / 15
Nexperia
PMCM4402UPE
20 V, P-channel Trench MOSFET
aaa-026606
2
-10
I
D
(A)
t
p
= 10 µs
-10
100 µs
1 ms
-1
-1
DC; T = 25 °C
sp
10 ms
-10
2
DC; T
= 25 °C; 6 cm
amb
100 ms
-2
-10
-1
2
-10
-1
-10
-10
V
(V)
DS
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
250
70
85
50
5
Max
300
85
Unit
K/W
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
[3]
[3]
-
-
-
-
-
100
60
in free air; t ≤ 5 s
Rth(j-sp)
thermal resistance
from junction to solder
point
10
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain, 4-layer, 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
©
PMCM4402UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 May 2017
4 / 15
Nexperia
PMCM4402UPE
20 V, P-channel Trench MOSFET
aaa-013734
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.50
2
10
0.33
0.25
0.20
0.10
0.05
10
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-013735
2
10
duty cycle = 1
0.75
0.50
Z
th(j-a)
(K/W)
0.33
0.20
0.25
0.10
10
0.05
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMCM4402UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 May 2017
5 / 15
Nexperia
PMCM4402UPE
20 V, P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
V
VGSth
gate-source threshold ID = -250 µA; VDS=VGS; Tj = 25 °C
voltage
-0.4
-0.6
-0.9
IDSS
IGSS
drain leakage current
gate leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = 2.5 V; VDS = 0 V; Tj = 25 °C
VGS = -2.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -3 A; Tj = 25 °C
VGS = -4.5 V; ID = -3 A; Tj = 150 °C
VGS = -2.5 V; ID = -2 A; Tj = 25 °C
VGS = -1.8 V; ID = -0.1 A; Tj = 25 °C
VDS = -6 V; ID = -3 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-1
µA
µA
µA
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
S
-
10
-
-10
1
-
-
-1
-
200
-200
80
-
RDSon
drain-source on-state
resistance
65
93
88
120
14
114
110
180
-
gfs
forward
transconductance
RG
gate resistance
f = 1 MHz; Tj = 25 °C
-
6
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = -10 V; ID = -3 A; VGS = -4.5 V;
Tj = 25 °C
-
-
-
-
-
-
6.2
0.7
2
10
-
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
450
72
66
-
Coss
Crss
-
reverse transfer
capacitance
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -10 V; ID = -3.3 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
4
-
-
-
-
ns
ns
ns
ns
17
26
11
turn-off delay time
fall time
Source-drain diode
VSD
source-drain voltage
IS = -1.2 A; VGS = 0 V; Tj = 25 °C
-
-0.8
-1.2
V
©
PMCM4402UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 May 2017
6 / 15
Nexperia
PMCM4402UPE
20 V, P-channel Trench MOSFET
aaa-026607
aaa-026608
-3
-4
-5
-6
-14
D
(A)
-12
-10
I
-4.5 V
-2.5 V
I
D
(A)
-2.0 V
-1.8 V
-10
-8
-6
-4
-2
0
-10
min
typ
max
-1.6 V
-1.4 V
-10
-10
V
= -1.2 V
GS
0
-1
-2
-3
-4
0
-0.2
-0.4
-0.6
-0.8
-1.0
(V)
V
(V)
V
DS
GS
Tj = 25 °C
VDS = -5 V; Tj = 25 °C
Fig. 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 8. Sub-threshold drain current as a function of
gate-source voltage
aaa-026609
aaa-026610
280
400
R
(on)
-1.4 V -1.6 V
-1.8 V
-2.0 V
DS
(mΩ)
240
R
(on)
DS
300
200
160
120
80
-2.5 V
200
100
0
V
= -4.5 V
GS
T = 150 °C
j
40
T = 25 °C
j
0
0
-2
-4
-6
-8
-10
-12
D
-14
(A)
0
-1
-2
-3
-4
-5
I
V
(V)
GS
Tj = 25 °C
ID = -3.4 A
Fig. 9. Drain-source on-state resistance as a function Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
©
PMCM4402UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 May 2017
7 / 15
Nexperia
PMCM4402UPE
20 V, P-channel Trench MOSFET
aaa-026611
aaa-026612
-14
D
(A)
-12
1.5
1.0
0.5
0
I
a
-10
-8
-6
-4
-2
0
T = 150 °C
T = 25 °C
j
j
0
-0.5
-1.0
-1.5
-2.0
V
-2.5
(V)
-60
0
60
120
180
T (°C)
j
GS
VDS > ID x RDSon
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-026613
aaa-026614
3
-1.2
10
V
GS(th)
(V)
-1.0
-0.8
-0.6
-0.4
-0.2
0
C
iss
C
(pF)
max
2
10
typ
C
oss
C
rss
min
10
-1
-10
2
-60
0
60
120
180
-1
-10
-10
T (°C)
j
V
(V)
DS
ID = -250 µA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 13. Gate-source threshold voltage as a function of Fig. 14. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
PMCM4402UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 May 2017
8 / 15
Nexperia
PMCM4402UPE
20 V, P-channel Trench MOSFET
aaa-026615
-5
V
DS
V
GS
(V)
I
D
-4
-3
-2
-1
0
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
Q
Q
GD
G(tot)
GS
Q
003aaa508
Fig. 16. MOSFET transistor: Gate charge waveform
definitions
0
2
4
6
8
Q
G
(nC)
VDS = -10 V; ID = -3 A; Tamb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
aaa-023935
-1.2
I
S
(A)
-0.8
T
j = 150 °C
-0.4
T
j = 25 °C
0
0
-0.4
-0.8
-1.2
V
(V)
SD
VGS = 0 V
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 18. Duty cycle definition
©
PMCM4402UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 May 2017
9 / 15
Nexperia
PMCM4402UPE
20 V, P-channel Trench MOSFET
12. Package outline
WLCSP4: wafer level chip-size package; 4 bumps (2 x 2)
WLCSP4_2-2
A
B
E
D
A
2
ball A1
index area
A
A
1
detail X
C
y
y
C
1
B
A
e
2
ball A1
index area
1
2
v
w
C A
C
B
b
X
e
1
0
1 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A
A
b
D
E
e
e
2
v
w
y
1
2
1
max 0.375 0.215 0.160 0.275 0.81 0.81
mm nom 0.345 0.200 0.145 0.260 0.78 0.78 0.40 0.40 0.15 0.05 0.05
0.315 0.185 0.130 0.245 0.75 0.75
min
Note
Device back is metal coated on Drain potential.
wlcsp4_2-2_po
References
Outline
version
IEC
European
Issue date
projection
JEDEC
JEITA
17-04-26
17-05-03
WLCSP4_2-2
Fig. 19. Package outline WLCSP4 (WLCSP4_2-2)
©
PMCM4402UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 May 2017
10 / 15
Nexperia
PMCM4402UPE
20 V, P-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering
WLCSP4_2-2
0.15
0.25
0.3
0.4
0.1
1
solder resist
solder paste = solderland
0.4
1
occupied area
Dimensions in mm
wlcsp4_2-2_fr
Fig. 20. Reflow soldering footprint for WLCSP4 (WLCSP4_2-2)
©
PMCM4402UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 May 2017
11 / 15
Nexperia
PMCM4402UPE
20 V, P-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20170530
Data sheet status
Change notice
Supersedes
PMCM4402UPE v.1
Product data sheet
-
-
©
PMCM4402UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 May 2017
12 / 15
Nexperia
PMCM4402UPE
20 V, P-channel Trench MOSFET
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
15. Legal information
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Data sheet status
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warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction
of an Nexperia product can reasonably be expected to result in personal
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suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Document
status [1][2] status [3]
Product
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Product
[short] data
sheet
Production
This document contains the product
specification.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1] Please consult the most recently issued document before initiating or
completing a design.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
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[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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or problem which is based on any weakness or default in the customer’s
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
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©
PMCM4402UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 May 2017
13 / 15
Nexperia
PMCM4402UPE
20 V, P-channel Trench MOSFET
customer uses the product for automotive applications beyond Nexperia’
specifications such use shall be solely at customer’s own risk, and (c)
customer fully indemnifies Nexperia for any liability, damages or failed
product claims resulting from customer design and use of the product for
automotive applications beyond Nexperia’ standard warranty and Nexperia’
product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PMCM4402UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 May 2017
14 / 15
Nexperia
PMCM4402UPE
20 V, P-channel Trench MOSFET
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................6
11. Test information......................................................... 9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information..................................................... 13
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 30 May 2017
©
PMCM4402UPE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
30 May 2017
15 / 15
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