PMCXB900UE [NEXPERIA]

20 V, complementary N/P-channel Trench MOSFETProduction;


型号：	PMCXB900UE
厂家：	Nexperia
描述：	20 V, complementary N/P-channel Trench MOSFETProduction
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中文：	中文翻译
下载：	下载PDF数据表文档文件

PMCXB900UE

20 V, complementary N/P-channel Trench MOSFET

30 June 2015

Product data sheet

1. General description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a

leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic

package using Trench MOSFET technology.

2. Features and benefits

Trench MOSFET technology

•

Very low threshold voltage for portable applications: V_GS(th)= 0.7 V

Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

ElectroStatic Discharge (ESD) protection > 1 kV HBM

3. Applications

Relay driver

High-speed line driver

Level shifter

•

Power management in battery-driven portables

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

TR1 (N-channel), Static characteristics

R_DSon

drain-source on-state

resistance

V_GS= 4.5 V; I_D= 600 mA; T_j= 25 °C

470

620

mΩ

TR2 (P-channel), Static characteristics

R_DSon

drain-source on-state

resistance

V_GS= -4.5 V; I_D= -500 mA; T_j= 25 °C

1.02

1.4

TR1 (N-channel)

V_DS

drain-source voltage

drain current

T_j= 25 °C

I_D

V_GS= 4.5 V; T_amb= 25 °C

[1]

600

TR2 (P-channel)

V_DS

I_D

drain-source voltage

drain current

T_j= 25 °C

-20

V_GS= -4.5 V; T_amb= 25 °C

-500

Nexperia

PMCXB900UE

20 V, complementary N/P-channel Trench MOSFET

Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm².

[1]

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

source TR1

gate TR1

drain TR2

source TR2

gate TR2

drain TR1

drain TR2

017aaa262

Transparent top view

DFN1010B-6 (SOT1216)

5. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PMCXB900UE

DFN1010B-6

DFN1010B-6: plastic thermal enhanced ultra thin small outline

package; no leads; 6 terminals

SOT1216

6. Marking

Table 4.

Marking codes

Type number

Marking code

PMCXB900UE

10 00 00

READING

DIRECTION

MARKING CODE

MARK-FREE AREA

(EXAMPLE)

PIN 1

INDICATION MARK

READING EXAMPLE:

YEAR DATE

CODE

aaa-007665

Fig. 1. DFN1010B-6 (SOT1216) binary marking code description

PMCXB900UE

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Product data sheet

30 June 2015

2 / 20

Nexperia

PMCXB900UE

20 V, complementary N/P-channel Trench MOSFET

7. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

TR1 (N-channel)

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-8

V_GS= 4.5 V; T_amb= 25 °C

V_GS= 4.5 V; T_amb= 100 °C

T_amb= 25 °C; single pulse; t_p≤ 10 µs

T_amb= 25 °C

[1]

600

400

2.5

265

380

I_DM

P_tot

peak drain current

total power dissipation

[2]

[1]

T_sp= 25 °C

T_amb= 25 °C

T_j= 25 °C

4025 mW

TR1 (N-channel), Source-drain diode

I_S

source current

[1]

400

TR2 (P-channel)

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

-20

-8

V_GS= -4.5 V; T_amb= 25 °C

V_GS= -4.5 V; T_amb= 100 °C

T_amb= 25 °C; single pulse; t_p≤ 10 µs

T_amb= 25 °C

[1]

-500

-300

-2

I_DM

P_tot

peak drain current

total power dissipation

[2]

[1]

265

380

T_sp= 25 °C

4025 mW

TR2 (P-channel), Source-drain diode

I_S

source current

T_amb= 25 °C

[1]

-350

Per device

T_j

junction temperature

ambient temperature

storage temperature

-55

-65

150

°C

T_amb

T_stg

Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm².

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[1]

PMCXB900UE

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Product data sheet

30 June 2015

3 / 20

Nexperia

PMCXB900UE

20 V, complementary N/P-channel Trench MOSFET

017aaa123

017aaa124

120

der

(%)

der

(%)

- 75

- 25

125

175

- 25

125

175

T (°C)

Fig. 2. MOSFET transistor: Normalized total

power dissipation as a function of junction

temperature

Fig. 3. MOSFET transistor: Normalized continuous

drain current as a function of junction

temperature

aaa-008997

Limit R

= V /I

DSon

(A)

= 10 µs

= 100 µs

= 1 ms

-1

DC; T = 25 °C

= 10 ms

DC; T

= 25 °C;

amb

drain mounting pad 1 cm

= 100 ms

-2

-1

(V)

I_DM= single pulse

Fig. 4. TR1 (N-channel): safe operating area; junction to ambient; continuous and peak drain currents as a

function of drain-source voltage

PMCXB900UE

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Product data sheet

30 June 2015

4 / 20

Nexperia

PMCXB900UE

20 V, complementary N/P-channel Trench MOSFET

aaa-006901

-10

Limit R

= V /I

(A)

DSon

10 µs

-1

100 µs

1 ms

-10

DC; T = 25 °C

10 ms

DC; T

= 25 °C;

drain mounting pad 1 cm

amb

100 ms

-2

-10

-1

-10

(V)

I_DM= single pulse

Fig. 5. TR2 (P-channel): safe operating area; junction to ambient; continuous and peak drain currents as a

function of drain-source voltage

8. Thermal characteristics

Table 6.

Symbol

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

Unit

TR1 (N-channel)

R_th(j-a)

thermal resistance

from junction to

ambient

in free air

[1]

[2]

410

285

475

330

K/W

R_th(j-sp)

thermal resistance

from junction to solder

point

K/W

TR2 (P-channel)

R_th(j-a)

thermal resistance

from junction to

ambient

in free air

[1]

[2]

410

285

475

330

K/W

R_th(j-sp)

thermal resistance

from junction to solder

point

K/W

[1] Device mounted on an FR4 PCB, single-sided copper; tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm².

PMCXB900UE

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Product data sheet

30 June 2015

5 / 20

Nexperia

PMCXB900UE

20 V, complementary N/P-channel Trench MOSFET

aaa-006902

duty cycle = 1

0.75

th(j-a)

(K/W)

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

-3

-2

-1

(s)

FR4 PCB, standard footprint

Fig. 6. TR1 and TR2: transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

aaa-006903

th(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

-3

-2

-1

(s)

FR4 PCB, mounting pad for drain 1 cm²

Fig. 7. TR1 and TR2: transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

PMCXB900UE

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Product data sheet

30 June 2015

6 / 20

Nexperia

PMCXB900UE

20 V, complementary N/P-channel Trench MOSFET

9. Characteristics

Table 7.

Symbol

Characteristics

Parameter

Conditions

Min

Typ

Max

Unit

TR1 (N-channel), Static characteristics

V_(BR)DSS

drain-source

I_D= 250 µA; V_GS= 0 V; T_j= 25 °C

breakdown voltage

V_GSth

gate-source threshold I_D= 250 µA; V_DS= V_GS; T_j= 25 °C

voltage

0.45

0.7

0.95

I_DSS

I_GSS

drain leakage current

gate leakage current

V_DS= 20 V; V_GS= 0 V; T_j= 25 °C

V_GS= 8 V; V_DS= 0 V; T_j= 25 °C

V_GS= -8 V; V_DS= 0 V; T_j= 25 °C

V_GS= 4.5 V; V_DS= 0 V; T_j= 25 °C

V_GS= -4.5 V; V_DS= 0 V; T_j= 25 °C

V_GS= 4.5 V; I_D= 600 mA; T_j= 25 °C

V_GS= 4.5 V; I_D= 600 mA; T_j= 150 °C

V_GS= 2.5 V; I_D= 500 mA; T_j= 25 °C

V_GS= 1.8 V; I_D= 100 mA; T_j= 25 °C

V_GS= 1.5 V; I_D= 10 mA; T_j= 25 °C

V_GS= 1.2 V; I_D= 1 mA; T_j= 25 °C

V_DS= 5 V; I_D= 600 mA; T_j= 25 °C

µA

mΩ

-10

-1

R_DSon

drain-source on-state

resistance

470

760

620

845

1125

2210

620

1000 mΩ

850 mΩ

1300 mΩ

3000 mΩ

mΩ

g_fs

transfer conductance

TR1 (N-channel), Dynamic characteristics

Q_G(tot)

Q_GS

Q_GD

C_iss

total gate charge

gate-source charge

gate-drain charge

input capacitance

output capacitance

V_DS= 10 V; I_D= 600 mA; V_GS= 4.5 V;

T_j= 25 °C

0.4

0.1

21.3

5.4

4.2

0.7

V_DS= 10 V; f = 1 MHz; V_GS= 0 V;

T_j= 25 °C

C_oss

C_rss

reverse transfer

capacitance

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= 10 V; I_D= 600 mA; V_GS= 4.5 V;

R_G(ext)= 6 Ω; T_j= 25 °C

5.6

9.2

turn-off delay time

fall time

TR1 (N-channel), Source-drain diode characteristics

V_SD

source-drain voltage

I_S= 360 mA; V_GS= 0 V; T_j= 25 °C

0.8

1.2

PMCXB900UE

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Product data sheet

30 June 2015

7 / 20

Nexperia

PMCXB900UE

20 V, complementary N/P-channel Trench MOSFET

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR2 (P-channel), Static characteristics

V_(BR)DSS

drain-source

I_D= -250 µA; V_GS= 0 V; T_j= 25 °C

-20

breakdown voltage

V_GSth

gate-source threshold I_D= -250 µA; V_DS= V_GS; T_j= 25 °C

voltage

-0.45 -0.7

-0.95

I_DSS

I_GSS

drain leakage current

gate leakage current

V_DS= -20 V; V_GS= 0 V; T_j= 25 °C

V_GS= 8 V; V_DS= 0 V; T_j= 25 °C

-1

-10

µA

V_GS= -8 V; V_DS= 0 V; T_j= 25 °C

V_GS= 4.5 V; V_DS= 0 V; T_j= 25 °C

V_GS= -4.5 V; V_DS= 0 V; T_j= 25 °C

V_GS= -4.5 V; I_D= -500 mA; T_j= 25 °C

V_GS= -4.5 V; I_D= -500 mA; T_j= 150 °C

V_GS= -2.5 V; I_D= -200 mA; T_j= 25 °C

V_GS= -1.8 V; I_D= -40 mA; T_j= 25 °C

V_GS= -1.5 V; I_D= -10 mA; T_j= 25 °C

V_GS= -1.2 V; I_D= -1 mA; T_j= 25 °C

V_DS= -10 V; I_D= -500 mA; T_j= 25 °C

-1

1.4

2.1

2.2

3.3

R_DSon

drain-source on-state

resistance

1.02

1.54

1.27

1.7

2.3

3.5

480

g_fs

transfer conductance

TR2 (P-channel), Dynamic characteristics

Q_G(tot)

Q_GS

Q_GD

C_iss

total gate charge

gate-source charge

gate-drain charge

input capacitance

output capacitance

V_DS= -10 V; I_D= -450 mA;

V_GS= -4.5 V; T_j= 25 °C

1.19

0.17

0.1

2.1

V_DS= -10 V; f = 1 MHz; V_GS= 0 V;

T_j= 25 °C

C_oss

C_rss

reverse transfer

capacitance

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= -10 V; I_D= -450 mA;

2.3

V_GS= -4.5 V; R_G(ext)= 6 Ω; T_j= 25 °C

turn-off delay time

fall time

13.5

TR2 (P-channel), Source-drain diode characteristics

V_SD

source-drain voltage

I_S= -115 mA; V_GS= 0 V; T_j= 25 °C

-0.7

-1.2

PMCXB900UE

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Product data sheet

30 June 2015

8 / 20

Nexperia

PMCXB900UE

20 V, complementary N/P-channel Trench MOSFET

aaa-008998

aaa-008999

-3

2.5

4.5 V

(A)

2.0

2.5 V

-4

-5

-6

1.5

1.0

0.5

min

typ

max

1.8 V

1.5 V

= 1.2 V

0.5

1.0

1.5

(V)

T_j= 25 °C

T_j= 25 °C; V_DS= 5 V

Fig. 8. TR1: output characteristics; drain current as a Fig. 9. TR1: sub-threshold drain current as a function

function of drain-source voltage; typical values

of gate-source voltage

aaa-009000

aaa-009001

1.5 V

2 V

DSon

(Ω)

DSon

(Ω)

1.2 V

1.8 V

2.5 V

3 V

T = 150 °C

= 4.5 V

T = 25 °C

0.5

1.0

1.5

2.0

2.5

(A)

(V)

T_j= 25 °C

I_D= 0.6 A

Fig. 10. TR1: drain-source on-state resistance as a

function of drain current; typical values

Fig. 11. TR1: drain-source on-state resistance as a

function of gate-source voltage; typical values

PMCXB900UE

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Product data sheet

30 June 2015

9 / 20

Nexperia

PMCXB900UE

20 V, complementary N/P-channel Trench MOSFET

aaa-009002

aaa-009003

2.5

2.0

(A)

2.0

1.5

1.0

0.5

1.0

0.5

T = 150 °C

T = 25 °C

-60

120

180

(V)

T (°C)

V_DS> I_D× R_DSon

Fig. 13. TR1: normalized drain-source on-state

resistance as a function of junction

temperature; typical values

Fig. 12. TR1: transfer characteristics; drain current as a

function of gate-source voltage; typical values

aaa-009004

aaa-009005

1.5

GS(th)

(V)

(pF)

1.0

0.5

iss

max

oss

typ

rss

min

-1

-60

120

180

T (°C)

(V)

I_D= 0.25 mA; V_DS= V_GS

f = 1 MHz; V_GS= 0 V

Fig. 15. TR1: input, output and reverse transfer

Fig. 14. TR1: gate-source threshold voltage as a

function of junction temperature

capacitances as a function of drain-source

voltage; typical values

PMCXB900UE

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Product data sheet

30 June 2015

10 / 20

Nexperia

PMCXB900UE

20 V, complementary N/P-channel Trench MOSFET

aaa-009006

(V)

GS(pl)

GS(th)

GS1

GS2

G(tot)

017aaa137

Fig. 17. Gate charge waveform definitions

0.1

0.2

0.3

0.4

0.5

(nC)

I_D= 0.6 A; V_DS= 10 V; T_amb= 25 °C

Fig. 16. TR1: gate-source voltage as a function of gate

charge; typical values

aaa-009007

aaa-006904

2.5

-2.0

= -4.5 V

(A)

2.0

-3.5 V

-3 V

-1.5

1.5

1.0

0.5

-1.0

-0.5

0.0

-2.5 V

-1.8 V

-1.2 V

T = 150 °C

T = 25 °C

0.4

0.8

1.2

1.6

2.0

(V)

-1

-2

-3

-4

(V)

V_GS= 0 V

T_j= 25 °C

Fig. 18. TR1: source current as a function of source-

drain voltage; typical values

Fig. 19. TR2: output characteristics; drain current as a

function of drain-source voltage; typical values

PMCXB900UE

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Product data sheet

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11 / 20

Nexperia

PMCXB900UE

20 V, complementary N/P-channel Trench MOSFET

aaa-006905

aaa-006906

-2

-10

2.0

(Ω)

DSon

-1.8 V

-2.2 V

-2.5 V

(A)

-3

-10

1.5

-3 V

-3.5 V

min

typ

max

-4

-10

1.0

0.5

0.0

= -4.5 V

-5

-10

-6

-10

0.0

-0.5

-1.0

-1.5

0.0

-0.5

-1.0

-1.5

-2.0

(V)

I (V)

T_j= 25 °C; V_DS= -5 V

T_j= 25 °C

Fig. 20. TR2: sub-threshold drain current as a function Fig. 21. TR2: drain-source on-state resistance as a

of gate-source voltage

function of drain current; typical values

aaa-006907

aaa-006908

-1.00

DSon

(Ω)

(A)

T = 25 °C

T = 150 °C

-0.75

-0.50

-0.25

0.00

T = 150 °C

T = 25 °C

-1

-2

-3

-4

-5

-1

-2

-3

-4

(V)

I_D= -0.5 A

V_DS> I_D× R_DSon

Fig. 22. TR2: drain-source on-state resistance as a

function of gate-source voltage; typical values

Fig. 23. TR2: transfer characteristics; drain current as a

function of gate-source voltage; typical values

PMCXB900UE

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Product data sheet

30 June 2015

12 / 20

Nexperia

PMCXB900UE

20 V, complementary N/P-channel Trench MOSFET

aaa-006909

aaa-006910

1.50

-1.5

GS(th)

(V)

1.25

1.00

0.75

-1.0

-0.5

0.0

max

typ

min

0.50

-60

120

180

-60

120

180

T (°C)

I_D= -0.25 mA; V_DS= V_GS

Fig. 24. TR2: normalized drain-source on-state

resistance as a function of junction

temperature; typical values

Fig. 25. TR2: gate-source threshold voltage as a

function of junction temperature

aaa-006912

aaa-006911

-5

iss

(V)

-4

-3

-2

-1

(pF)

oss

rss

-1

-10

0.2

0.4

0.6

-1

-10

(nC)

(V)

I_D= -0.45 A; V_DS= -10 V; T_amb= 25 °C

f = 1 MHz; V_GS= 0 V

Fig. 26. TR2: input, output and reverse transfer

Fig. 27. TR2: gate-source voltage as a function of gate

charge; typical values

capacitances as a function of drain-source

voltage; typical values

PMCXB900UE

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Product data sheet

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Nexperia

PMCXB900UE

20 V, complementary N/P-channel Trench MOSFET

aaa-006913

-2.0

(A)

-1.5

GS(pl)

GS(th)

-1.0

-0.5

0.0

GS1

GS2

T = 150 °C

T = 25 °C

G(tot)

017aaa137

Fig. 28. MOSFET transistor: Gate charge waveform

definitions

0.0

-0.5

-1.0

-1.5

-2.0

(V)

V_GS= 0 V

Fig. 29. TR2: source current as a function of source-

drain voltage; typical values

10. Test information

duty cycle δ =

006aaa812

Fig. 30. Duty cycle definition

PMCXB900UE

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Product data sheet

30 June 2015

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PMCXB900UE

20 V, complementary N/P-channel Trench MOSFET

11. Package outline

0.35

0.15

0.23

0.125

0.205

0.22

0.30

0.95

1.05

0.32

0.40

0.04

max

0.34

0.40

0.275 0.275

1.05

1.15

Dimensions in mm

13-03-05

Fig. 31. Package outline DFN1010B-6 (SOT1216)

PMCXB900UE

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Product data sheet

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15 / 20

Nexperia

PMCXB900UE

20 V, complementary N/P-channel Trench MOSFET

12. Soldering

Footprint information for reflow soldering of DFN1010B-6 package

SOT1216

0.9

0.35

0.15 0.2 (6x) 0.15

0.25

0.35

1.3 1.2 0.5

0.35

0.6 1.1

0.25

0.3 (6x)

1.35

solder land

solder land plus solder paste

occupied area

solder resist

Dimensions in mm

13-03-06

Issue date

sot1216_fr

14-07-28

Fig. 32. Reflow soldering footprint for DFN1010B-6 (SOT1216)

PMCXB900UE

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Product data sheet

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PMCXB900UE

20 V, complementary N/P-channel Trench MOSFET

13. Revision history

Table 8.

Revision history

Data sheet ID

Release date

Data sheet status

Change notice

Supersedes

PMCXB900UE v.2

Modification:

20150630

Product data sheet

PMCXB900UE v.1

Change of binary marking code position.

•

20131007 Product data sheet

PMCXB900UE v.1

PMCXB900UE

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Product data sheet

30 June 2015

17 / 20

Nexperia

PMCXB900UE

20 V, complementary N/P-channel Trench MOSFET

In no event shall Nexperia be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation -

lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

14. Legal information

14.1 Data sheet status

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of Nexperia.

Document

Product

Definition

status [1][2] status [3]

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Right to make changes — Nexperia reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Suitability for use — Nexperia products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of a Nexperia product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. Nexperia and its suppliers accept no liability for

inclusion and/or use of Nexperia products in such equipment or

applications and therefore such inclusion and/or use is at the customer’s own

risk.

Product

[short] data

sheet

Production

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nexperia.com.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

14.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

Nexperia does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Customers are responsible for the design and operation of their

applications and products using Nexperia products, and Nexperia

accepts no liability for any assistance with applications or

customer product design. It is customer’s sole responsibility to determine

whether the Nexperia product is suitable and fit for the

customer’s applications and products planned, as well as for the planned

application and use of customer’s third party customer(s). Customers should

provide appropriate design and operating safeguards to minimize the risks

associated with their applications and products.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

Nexperia does not accept any liability related to any default,

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local Nexperia

sales office. In case of any inconsistency or conflict with the

damage, costs or problem which is based on any weakness or default

in the customer’s applications or products, or the application or use by

customer’s third party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and products using Nexperia

products in order to avoid a default of the applications

and the products or of the application or use by customer’s third party

customer(s). Nexperia does not accept any liability in this respect.

short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product

is deemed to offer functions and qualities beyond those described in the

Product data sheet.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — Nexperia

14.3 Disclaimers

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nexperia.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. Nexperia hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, Nexperia does not give

any representations or warranties, expressed or implied, as to the accuracy

or completeness of such information and shall have no liability for the

consequences of use of such information. Nexperia takes no

responsibility for the content in this document if provided by an information

source outside of Nexperia.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

PMCXB900UE

All information provided in this document is subject to legal disclaimers.

Product data sheet

30 June 2015

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Nexperia

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20 V, complementary N/P-channel Trench MOSFET

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Nexperia product is automotive qualified,

the product is not suitable for automotive use. It is neither qualified nor

tested in accordance with automotive testing or application requirements.

Nexperia accepts no liability for inclusion and/or use of non-

automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards,

customer (a) shall use the product without Nexperia’s warranty

of the product for such automotive applications, use and specifications, and

(b) whenever customer uses the product for automotive applications beyond

Nexperia’s specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies Nexperia for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond Nexperia’s

standard warranty and Nexperia’s product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

14.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

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Nexperia

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20 V, complementary N/P-channel Trench MOSFET

15. Contents

General description ............................................... 1

Features and benefits ............................................1

Applications ........................................................... 1

Quick reference data ............................................. 1

Ordering information .............................................2

Marking ...................................................................2

Limiting values .......................................................3

Thermal characteristics .........................................5

Characteristics .......................................................7

Test information ...................................................14

Package outline ................................................... 15

Soldering .............................................................. 16

Revision history ...................................................17

Legal information .................................................18

Data sheet status ............................................... 18

Definitions ...........................................................18

Disclaimers .........................................................18

Trademarks ........................................................ 19

14.1

14.2

14.3

14.4

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 30 June 2015

PMCXB900UE

All information provided in this document is subject to legal disclaimers.

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PMCXB900UE [NEXPERIA]

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