PMDPB95XNE2 [NEXPERIA]
30 V, dual N-channel Trench MOSFETProduction;型号: | PMDPB95XNE2 |
厂家: | Nexperia |
描述: | 30 V, dual N-channel Trench MOSFETProduction |
文件: | 总15页 (文件大小:720K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PMDPB95XNE2
30 V, dual N-channel Trench MOSFET
14 June 2016
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless
DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Very fast switching
Trench MOSFET technology
Leadless medium power SMD plastic package: 2 × 2 × 0.65 mm
Exposed drain pad for excellent thermal conduction
EletroStatic Discharge (ESD) protection > 2 kV HBM
•
•
•
•
•
3. Applications
Charging switch for portable devices
DC-to-DC converters
Small brushless DC motor drive
Power management in battery-driven portables
Hard disk and computing power management
•
•
•
•
•
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
30
12
3
V
V
A
-12
-
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 2.8 A; Tj = 25 °C
[1]
Static characteristics (per transistor)
RDSon
drain-source on-state
resistance
-
77
99
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
Nexperia
PMDPB95XNE2
30 V, dual N-channel Trench MOSFET
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
D2
D1
1
2
3
4
5
6
7
8
S1
G1
D2
S2
G2
D1
D1
D2
source TR1
gate TR1
drain TR2
source TR2
gate TR2
drain TR1
drain TR1
drain TR2
6
5
4
7
8
G1
G2
1
2
3
Transparent top view
S1
S2
017aaa256
DFN2020-6 (SOT1118)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
DFN2020-6: plastic thermal enhanced ultra thin small
Version
PMDPB95XNE2
DFN2020-6
SOT1118
outline package; no leads; 6 terminals; body 2 x 2 x 0.65
mm
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMDPB95XNE2
3B
©
PMDPB95XNE2
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
14 June 2016
2 / 15
Nexperia
PMDPB95XNE2
30 V, dual N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
30
V
-12
12
V
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
[1]
-
-
-
-
-
-
-
3
A
2.7
1.7
11
A
A
IDM
Ptot
peak drain current
A
total power dissipation
[2]
[1]
510
1.165
8.33
mW
W
W
Tsp = 25 °C
Per device
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
Tamb
Tstg
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
-
1.1
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
©
PMDPB95XNE2
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
14 June 2016
3 / 15
Nexperia
PMDPB95XNE2
30 V, dual N-channel Trench MOSFET
017aaa123
017aaa124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
aaa-022450
2
10
I
D
(A)
t
=
p
10
Limit R
= V /I
DS
10 µs
DSon
D
100 µs
1
1 ms
DC; T = 25 °C
sp
10 ms
-1
10
10
100 ms
DC; T
= 25 °C;
amb
drain mounting pad 6 cm
2
-2
-1
2
10
1
10
10
V
(V)
DS
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
in free air
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance
from junction to
ambient
[1]
[2]
[2]
-
-
-
224
95
257
109
64
K/W
K/W
K/W
in free air; t ≤ 5 s
55
©
PMDPB95XNE2
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
14 June 2016
4 / 15
Nexperia
PMDPB95XNE2
30 V, dual N-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-sp)
thermal resistance
from junction to solder
point
-
12
15
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
aaa-022451
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.50
0.33
0.25
0.20
2
10
0.10
0.05
0.02
10
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-022452
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.50
0.33
0.25
0.20
0.10
0.05
10
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMDPB95XNE2
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
14 June 2016
5 / 15
Nexperia
PMDPB95XNE2
30 V, dual N-channel Trench MOSFET
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics (per transistor)
V(BR)DSS
drain-source
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
V
breakdown voltage
VGSth
gate-source threshold ID = 250 µA; VDS=VGS; Tj = 25 °C
voltage
0.75
1
1.25
IDSS
IGSS
drain leakage current
gate leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 2.8 A; Tj = 25 °C
VGS = 4.5 V; ID = 2.8 A; Tj = 150 °C
VGS = 2.5 V; ID = 2.5 A; Tj = 25 °C
VDS = 10 V; ID = 2.8 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
1
µA
µA
µA
µA
µA
mΩ
mΩ
mΩ
S
-
10
-10
2
-
-
-
-2
RDSon
drain-source on-state
resistance
77
126
92
8.6
99
170
117
-
gfs
forward
transconductance
RG
gate resistance
Tj = 25 °C; f = 1 MHz
-
9.2
-
Ω
Dynamic characteristics (per transistor)
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
VDS = 15 V; ID = 3 A; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
2.9
0.4
0.8
258
31
4.5
nC
nC
nC
pF
pF
pF
-
-
-
-
-
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
Coss
Crss
reverse transfer
capacitance
23
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 15 V; ID = 3 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
9
-
-
-
-
ns
ns
ns
ns
10
20
8
turn-off delay time
fall time
Source-drain diode (per transistor)
VSD
source-drain voltage
IS = 1.1 A; VGS = 0 V; Tj = 25 °C
-
0.7
1.2
V
©
PMDPB95XNE2
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
14 June 2016
6 / 15
Nexperia
PMDPB95XNE2
30 V, dual N-channel Trench MOSFET
aaa-022453
aaa-022454
-3
-4
-5
-6
12
10
D
4.5 V
3.0 V
I
D
I
(A)
(A)
2.5 V
9
6
3
0
10
2.2 V
2.0 V
min
typ
max
10
10
V
= 1.8 V
GS
0
1
2
3
4
5
0
0.5
1.0
1.5
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Subthreshold drain current as a function of
gate-source voltage
aaa-022455
aaa-022456
0.4
0.4
1.8 V
R
DSon
(Ω)
R
DSon
(Ω)
1.6 V
2.2 V
2.4 V
2.5 V
0.3
0.2
0.1
0.0
0.3
0.2
0.1
0.0
3 V
T = 150 °C
j
V
= 4.5 V
GS
T = 25 °C
j
0
3
6
9
12
0
3
6
9
12
I
D
(A)
V
(V)
GS
Tj = 25 °C
ID = 2.9 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values of gate-source voltage; typical values
©
PMDPB95XNE2
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
14 June 2016
7 / 15
Nexperia
PMDPB95XNE2
30 V, dual N-channel Trench MOSFET
aaa-022457
aaa-022458
12
2
1.5
1.0
0.5
0
I
a
D
(A)
9
6
3
0
T = 150 °C
j
T = 25 °C
j
0
1
2
3
4
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
aaa-022459
aaa-022460
3
1.5
10
V
GS(th)
(V)
max
typ
C
(pF)
C
iss
1.0
0.5
0.0
2
10
min
C
C
oss
rss
10
10
-1
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
PMDPB95XNE2
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
14 June 2016
8 / 15
Nexperia
PMDPB95XNE2
30 V, dual N-channel Trench MOSFET
aaa-022461
5
V
DS
V
GS
(V)
I
4
3
2
1
0
D
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
Fig. 15. Gate charge waveform definitions
0
1
2
3
Q
G
(nC)
ID = 2.8 A; VDS = 15 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-022463
5
I
S
(A)
4
3
2
1
0
T = 150 °C
j
T = 25 °C
j
0.0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
©
PMDPB95XNE2
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
14 June 2016
9 / 15
Nexperia
PMDPB95XNE2
30 V, dual N-channel Trench MOSFET
12. Package outline
HUSON6: plastic, thermal enhanced ultra thin small outline package; no leads;
6 terminals; body 2 x 2 x 0.65 mm
SOT1118
b
v
A B
p
(6x)
B
A
D
A
E
A
1
terminal 1
index area
detail X
C
terminal 1
index area
y
1
y
e
C
1
3
L
p
(6x)
(8x)
E
1
(2x)
X
6
4
e
1
D
1
(2x)
0
1
2 mm
scale
Dimensions
Unit
(1)
A
A
b
D
D
1
E
E
e
e
1
L
p
v
y
y
1
1
p
1
max 0.65 0.04 0.35 2.1 0.77 2.1
nom
1.1
0.9
0.54 0.3
0.44 0.2
mm
0.65
0.1 0.05 0.05
min
0.25 1.9 0.57 1.9
Note
1. Dimension including plating thickness.
sot1118_po
References
Outline
version
IEC
European
projection
Issue date
JEDEC
- - -
JEITA
10-08-16
13-06-06
SOT1118
Fig. 18. Package outline DFN2020-6 (SOT1118)
©
PMDPB95XNE2
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
14 June 2016
10 / 15
Nexperia
PMDPB95XNE2
30 V, dual N-channel Trench MOSFET
13. Soldering
2.1
0.65
0.49
0.65
0.49
0.3 0.4
(6×) (6×)
solder lands
solder paste
0.875
1.05 1.15
(2×) (2×)
2.25
solder resist
0.875
occupied area
Dimensions in mm
0.35
(6×)
0.72
(2×)
0.45
(6×)
0.82
(2×)
sot1118_fr
Fig. 19. Reflow soldering footprint for DFN2020-6 (SOT1118)
©
PMDPB95XNE2
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
14 June 2016
11 / 15
Nexperia
PMDPB95XNE2
30 V, dual N-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMDPB95XNE2 v.2
Modifications:
20160614
Product data sheet
-
PMDPB95XNE2 v.1
Values of ID and RDSon corrected
•
PMDPB95XNE2 v.1
20160419
Product data sheet
-
-
©
PMDPB95XNE2
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
14 June 2016
12 / 15
Nexperia
PMDPB95XNE2
30 V, dual N-channel Trench MOSFET
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
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modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
15.3 Disclaimers
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
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applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
©
PMDPB95XNE2
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Nexperia B.V. 2017. All rights reserved
Product data sheet
14 June 2016
13 / 15
Nexperia
PMDPB95XNE2
30 V, dual N-channel Trench MOSFET
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Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
Nexperia accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PMDPB95XNE2
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
14 June 2016
14 / 15
Nexperia
PMDPB95XNE2
30 V, dual N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................3
Thermal characteristics .........................................4
Characteristics .......................................................6
Test information .....................................................9
Package outline ................................................... 10
Soldering .............................................................. 11
Revision history ...................................................12
3
4
5
6
7
8
9
10
11
12
13
14
15
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
15.1
15.2
15.3
15.4
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 14 June 2016
©
PMDPB95XNE2
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
14 June 2016
15 / 15
相关型号:
PMDT290UNE
800mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ULTRA SMALL, PLASTIC PACKAGE-6
NXP
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