PMDT290UNE,115 [NXP]
PMDT290UNE - 20 V, 800 mA dual N-channel Trench MOSFET SOT 6-Pin;
| 型号： | PMDT290UNE,115 |
| 厂家： | 
NXP |
| 描述： | PMDT290UNE - 20 V, 800 mA dual N-channel Trench MOSFET SOT 6-Pin 开关 光电二极管 晶体管 |
| 文件： | 总16页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMDT290UNE
T666
SO
20 V, 800 mA dual N-channel Trench MOSFET
Rev. 1 — 13 September 2011
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
Very fast switching
ESD protection up to 2 kV
AEC-Q101 qualified
Trench MOSFET technology
1.3 Applications
Relay driver
Low-side loadswitch
Switching circuits
High-speed line driver
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
20
8
V
-8
-
V
[1]
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
800
mA
Static characteristics (per transistor)
RDSon
drain-source on-state
resistance
-
290
380
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
PMDT290UNE
NXP Semiconductors
20 V, 800 mA dual N-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
S1
G1
D2
S2
G2
D1
source TR1
gate TR1
D2
D1
6
5
4
2
3
drain TR2
source TR2
gate TR2
G1
G2
4
5
1
2
3
6
drain TR1
SOT666
S1
S2
017aaa256
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
PMDT290UNE
4. Marking
plastic surface-mounted package; 6 leads
SOT666
Table 4.
Marking codes
Type number
PMDT290UNE
Marking code
AE
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
20
V
-8
-
8
V
[1]
[1]
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
800
500
3.2
330
390
mA
mA
A
-
IDM
Ptot
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
-
[2]
[1]
total power dissipation
Tamb = 25 °C
-
mW
mW
-
Tsp = 25 °C
-
1090 mW
Per device
[2]
Ptot
Tj
total power dissipation
junction temperature
ambient temperature
Tamb = 25 °C
-
500
150
150
mW
°C
-55
-55
Tamb
°C
PMDT290UNE
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 September 2011
2 of 16
PMDT290UNE
NXP Semiconductors
20 V, 800 mA dual N-channel Trench MOSFET
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Tstg
storage temperature
-65
150
°C
Source-drain diode
IS
source current
Tamb = 25 °C
-
-
370
mA
V
ESD maximum rating
[3]
VESD
electrostatic discharge voltage HBM
2000
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
017aaa123
017aaa124
120
120
P
der
I
der
(%)
(%)
80
80
40
40
0
−75
0
−75
−25
25
75
125
175
−25
25
75
125
175
T (°C)
j
T (°C)
j
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
PMDT290UNE
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 September 2011
3 of 16
PMDT290UNE
NXP Semiconductors
20 V, 800 mA dual N-channel Trench MOSFET
017aaa361
10
I
D
Limit R
= V /I
DS
DSon
D
(A)
1
(1)
(2)
–1
10
10
(3)
(4)
(5)
–2
10
–1
2
1
10
10
V
DS
(V)
IDM = single pulse
(1) tp = 1 ms
(2) tp = 10 ms
(3) DC; Tsp = 25 °C
(4) tp = 100 ms
(5) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
[1]
[2]
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
-
-
330
280
380
320
K/W
K/W
Rth(j-sp)
thermal resistance
from junction to solder
point
-
-
115
K/W
Per device
[1]
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
-
-
250
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
PMDT290UNE
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 September 2011
4 of 16
PMDT290UNE
NXP Semiconductors
20 V, 800 mA dual N-channel Trench MOSFET
017aaa064
3
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.5
0.33
0.2
2
10
0.25
0.1
0.05
0.02
0.01
0
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB; standard footprint
Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
017aaa065
3
10
Z
th(j-a)
duty cycle = 1
0.75
(K/W)
0.5
0.33
2
10
0.25
0.1
0.2
0.05
0.02
0.01
0
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for drain 1 cm2
Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PMDT290UNE
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 September 2011
5 of 16
PMDT290UNE
NXP Semiconductors
20 V, 800 mA dual N-channel Trench MOSFET
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics (per transistor)
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
0.5
0.75
0.95
IDSS
drain leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
VDS = 20 V; VGS = 0 V; Tj = 150 °C
VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
VGS = 4.5 V; ID = 500 mA; Tj = 150 °C
VGS = 2.5 V; ID = 400 mA; Tj = 25 °C
VGS = 1.8 V; ID = 100 mA; Tj = 25 °C
VDS = 10 V; ID = 200 mA; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
1
µA
µA
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
S
-
10
IGSS
RDSon
gfs
gate leakage current
-
2
-
2
-
500
500
380
610
620
1100
-
-
drain-source on-state
resistance
290
460
420
600
1.6
forward
transconductance
Dynamic characteristics (per transistor)
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
VDS = 10 V; ID = 500 mA; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
0.45
0.15
0.15
55
0.68
nC
nC
nC
pF
pF
pF
-
-
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
83
-
Coss
Crss
15
reverse transfer
capacitance
7
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 10 V; RL = 250 Ω; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
6
12
ns
ns
ns
ns
4
-
turn-off delay time
fall time
86
31
172
-
Source-drain diode (per transistor)
VSD
source-drain voltage
IS = 300 mA; VGS = 0 V; Tj = 25 °C
0.48
0.77
1.2
V
PMDT290UNE
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 September 2011
6 of 16
PMDT290UNE
NXP Semiconductors
20 V, 800 mA dual N-channel Trench MOSFET
017aaa351
017aaa352
–3
0.7
10
I
4.5 V
2.5 V
1.8 V
D
(A)
V
GS
= 1.6 V
I
D
0.6
(A)
0.5
0.4
0.3
0.2
0.1
0.0
–4
–5
–6
10
10
10
(1)
(2)
(3)
1.4 V
1.2 V
1.0 V
0
1
2
3
4
0.00
0.25
0.50
0.75
1.00
1.25
(V)
V
DS
(V)
V
GS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
017aaa353
017aaa354
2.0
2.0
R
DSon
(Ω)
R
DSon
(Ω)
(1)
(2)
(3)
1.5
1.0
0.5
0.0
1.5
1.0
0.5
0.0
(4)
(1)
(2)
(5)
(6)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
1
2
3
4
5
I
(A)
V
GS
(V)
D
Tj = 25 °C
ID = 400 mA
(1) Tj = 150 °C
(2) Tj = 25 °C
(1) VGS = 1.3 V
(2) VGS = 1.4 V
(3) VGS = 1.6 V
(4) VGS = 1.8 V
(5) VGS = 2.5 V
(6) VGS = 4.5 V
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMDT290UNE
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 September 2011
7 of 16
PMDT290UNE
NXP Semiconductors
20 V, 800 mA dual N-channel Trench MOSFET
017aaa355
017aaa356
0.7
1.75
I
D
a
(A)
0.6
1.50
0.5
0.4
0.3
0.2
0.1
0.0
1.25
1.00
0.75
0.50
(2)
(1)
0.0
0.5
1.0
1.5
2.0
2.5
(V)
–60
0
60
120
180
V
T (°C)
j
GS
VDS > ID × RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
017aaa357
017aaa358
2
1.25
10
V
GS(th)
(V)
(1)
1.00
0.75
0.50
0.25
0.00
C
(1)
(2)
(pF)
(2)
10
(3)
(3)
1
–1
2
–60
0
60
120
180
10
1
10
10
T (°C)
j
V
DS
(V)
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) minimum values
(3) Crss
Fig 12. Gate-source threshold voltage as a function of
junction temperature
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMDT290UNE
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 September 2011
8 of 16
PMDT290UNE
NXP Semiconductors
20 V, 800 mA dual N-channel Trench MOSFET
017aaa359
5
V
DS
V
GS
(V)
I
4
3
2
1
0
D
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
0.0
0.1
0.2
0.3
0.4
0.5
(nC)
Q
G
ID = 0.5 A; VDS = 10 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Gate charge waveform definitions
017aaa360
0.7
I
S
(A)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
(1)
(2)
0.0
0.2
0.4
0.6
0.8
1.0
(V)
V
SD
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
PMDT290UNE
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 September 2011
9 of 16
PMDT290UNE
NXP Semiconductors
20 V, 800 mA dual N-channel Trench MOSFET
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig 17. Duty cycle definition
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PMDT290UNE
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 September 2011
10 of 16
PMDT290UNE
NXP Semiconductors
20 V, 800 mA dual N-channel Trench MOSFET
9. Package outline
Plastic surface-mounted package; 6 leads
SOT666
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index
A
c
1
2
3
e
1
b
w
M
A
p
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
p
c
D
E
e
e
H
L
w
y
A
p
1
E
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-08
06-03-16
SOT666
Fig 18. Package outline SOT666
PMDT290UNE
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 September 2011
11 of 16
PMDT290UNE
NXP Semiconductors
20 V, 800 mA dual N-channel Trench MOSFET
10. Soldering
2.75
2.45
2.1
1.6
solder lands
0.4
(6×)
0.3
(2×)
0.25
(2×)
placement area
0.538
0.55
1.075
1.7
2
(2×)
solder paste
occupied area
0.325 0.375
(4×) (4×)
Dimensions in mm
1.7
0.45
0.6
(4×)
(2×)
0.5
0.65
(4×)
(2×)
sot666_fr
Fig 19. Reflow soldering footprint for SOT666
PMDT290UNE
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 September 2011
12 of 16
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NXP Semiconductors
20 V, 800 mA dual N-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMDT290UNE v.1
20110913
Product data sheet
-
-
PMDT290UNE
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 September 2011
13 of 16
PMDT290UNE
NXP Semiconductors
20 V, 800 mA dual N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
Document status [1] [2]
Product status [3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Right to make changes — NXP Semiconductors reserves the right to make
12.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
PMDT290UNE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 September 2011
14 of 16
PMDT290UNE
NXP Semiconductors
20 V, 800 mA dual N-channel Trench MOSFET
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PMDT290UNE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 13 September 2011
15 of 16
PMDT290UNE
NXP Semiconductors
20 V, 800 mA dual N-channel Trench MOSFET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Test information. . . . . . . . . . . . . . . . . . . . . . . . .10
Quality information . . . . . . . . . . . . . . . . . . . . . .10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .11
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .13
3
4
5
6
7
8
8.1
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15
12.1
12.2
12.3
12.4
13
Contact information. . . . . . . . . . . . . . . . . . . . . .15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 13 September 2011
Document identifier: PMDT290UNE
相关型号：
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