PMDXB550UNE [NEXPERIA]
30 V, dual N-channel Trench MOSFETProduction;型号: | PMDXB550UNE |
厂家: | Nexperia |
描述: | 30 V, dual N-channel Trench MOSFETProduction |
文件: | 总15页 (文件大小:720K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PMDXB550UNE
30 V, dual N-channel Trench MOSFET
25 March 2015
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Low threshold voltage
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Exposed drain pad for excellent thermal conduction
•
•
•
•
•
3. Applications
Relay driver
•
•
•
•
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
30
8
V
-8
-
V
VGS = 4.5 V; Tamb = 25 °C
[1]
590
mA
Static characteristics (per transistor)
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 590 mA; Tj = 25 °C
-
550
670
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
Nexperia
PMDXB550UNE
30 V, dual N-channel Trench MOSFET
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
D2
D1
1
2
3
4
5
6
7
8
S1
G1
D2
S2
G2
D1
D1
D2
source TR1
gate TR1
drain TR2
source TR2
gate TR2
drain TR1
drain TR1
drain TR2
1
6
5
4
7
G1
G2
2
8
3
S1
S2
017aaa256
Transparent top view
DFN1010B-6 (SOT1216)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMDXB550UNE
DFN1010B-6
DFN1010B-6: plastic thermal enhanced ultra thin small outline
package; no leads; 6 terminals
SOT1216
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMDXB550UNE
01 10 00
READING
DIRECTION
MARKING CODE
MARK-FREE AREA
(EXAMPLE)
PIN 1
INDICATION MARK
READING EXAMPLE:
YEAR DATE
CODE
11
01
10
aaa-007665
Fig. 1. DFN1010B-6 (SOT1216) binary marking code description
©
PMDXB550UNE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
25 March 2015
2 / 15
Nexperia
PMDXB550UNE
30 V, dual N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
30
V
-8
-
8
V
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
590
370
2.3
285
410
mA
mA
A
-
IDM
Ptot
peak drain current
-
total power dissipation
[2]
[1]
-
mW
mW
-
Tsp = 25 °C
-
4030 mW
Source-drain diode
IS
source current
Tamb = 25 °C
-
380
mA
Per device
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
Tamb
Tstg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
©
PMDXB550UNE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
25 March 2015
3 / 15
Nexperia
PMDXB550UNE
30 V, dual N-channel Trench MOSFET
017aaa123
017aaa124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 2. Normalized total power dissipation as a
function of junction temperature
Fig. 3. Normalized continuous drain current as a
function of junction temperature
aaa-017279
10
I
D
(A)
t
= 10 µs
p
Limit R
= V /I
DS
DSon
D
1
100 µs
1 ms
-1
10
10
10
DC; T = 25 °C
sp
10 ms
100 ms
DC; T
= 25 °C;
amb
drain mounting pad 1 cm
-2
2
-3
-1
10
2
1
10
10
V
(V)
DS
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
-
-
380
275
440
305
K/W
K/W
©
PMDXB550UNE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
25 March 2015
4 / 15
Nexperia
PMDXB550UNE
30 V, dual N-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-sp)
thermal resistance
from junction to solder
point
-
27
31
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
aaa-015677
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.50
0.33
0.20
0.25
0.10
2
10
0.05
0.02
0.01
0
10
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-015678
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.50
2
0.33
0.20
0.25
0.10
10
0.05
0.02
0.01
0
10
10
-3
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 1 cm2
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMDXB550UNE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
25 March 2015
5 / 15
Nexperia
PMDXB550UNE
30 V, dual N-channel Trench MOSFET
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics (per transistor)
V(BR)DSS
drain-source
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
V
breakdown voltage
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
0.45
0.7
0.95
IDSS
IGSS
drain leakage current
gate leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = 2.5 V; VDS = 0 V; Tj = 25 °C
VGS = -2.5 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 590 mA; Tj = 25 °C
VGS = 4.5 V; ID = 590 mA; Tj = 150 °C
VGS = 2.5 V; ID = 590 mA; Tj = 25 °C
VGS = 1.8 V; ID = 80 mA; Tj = 25 °C
VGS = 1.5 V; ID = 10 mA; Tj = 25 °C
VDS = 10 V; ID = 590 mA; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
µA
µA
µA
µA
µA
nA
-
5
-
-5
-
1
-
-1
-
100
-100
670
1170
900
1120
-
nA
RDSon
drain-source on-state
resistance
550
960
660
770
890
600
mΩ
mΩ
mΩ
mΩ
1500 mΩ
gfs
forward
-
mS
transconductance
Dynamic characteristics (per transistor)
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
VDS = 15 V; ID = 590 mA; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
0.6
0.1
0.1
30.3
5.8
4.2
1.05
nC
nC
nC
pF
pF
pF
-
-
-
-
-
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
Coss
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 15 V; ID = 590 mA; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
4
-
-
-
-
ns
ns
ns
ns
7
turn-off delay time
fall time
12
3
Source-drain diode (per transistor)
VSD
source-drain voltage
IS = 380 mA; VGS = 0 V; Tj = 25 °C
-
0.86
1.2
V
©
PMDXB550UNE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
25 March 2015
6 / 15
Nexperia
PMDXB550UNE
30 V, dual N-channel Trench MOSFET
aaa-017177
aaa-017178
-3
-4
-5
-6
3
10
D
V
= 4.5 V
3.0 V
GS
I
I
D
(A)
(A)
2.5 V
2
10
2.0 V
1.8 V
(3)
(1)
(2)
1
10
10
1.5 V
1.2 V
0
0
1
2
3
4
0
0.5
1
1.5
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
Fig. 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
(3) maximum values
Fig. 8. Sub-threshold drain current as a function of
gate-source voltage
aaa-017179
aaa-017180
2.0
2.0
2.5 V
1.8 V
1.2 V
2.0 V
1.5 V
R
DSon
(Ω)
R
DSon
(Ω)
3.0 V
1.5
1.0
0.5
0
1.5
1.0
0.5
0
T = 150 °C
j
V
= 4.5 V
GS
T = 25 °C
j
0
1
2
3
0
1
2
3
4
5
I
(A)
V
(V)
GS
D
Tj = 25 °C
ID = 1 A
Fig. 9. Drain-source on-state resistance as a function Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values of gate-source voltage; typical values
©
PMDXB550UNE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
25 March 2015
7 / 15
Nexperia
PMDXB550UNE
30 V, dual N-channel Trench MOSFET
aaa-017181
aaa-017182
1.0
2.0
1.5
1.0
0.5
0
I
D
(A)
a
0.8
0.6
0.4
0.2
0
T = 150 °C
j
T = 25 °C
j
0
1
2
3
4
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
aaa-017183
aaa-017184
2
1.5
10
V
GS(th)
(V)
(1)
C
(pF)
1.0
0.5
0
(1)
(2)
(3)
10
(2)
(3)
1
10
-1
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) minimum values
(3) Crss
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
©
PMDXB550UNE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
25 March 2015
8 / 15
Nexperia
PMDXB550UNE
30 V, dual N-channel Trench MOSFET
aaa-017185
5
V
DS
V
GS
(V)
I
4
3
2
1
0
D
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
003aaa508
Fig. 16. Gate charge waveform definitions
0
0.2
0.4
0.6
0.8
Q
G
(nC)
ID = 0.6 A; VDS = 15 V; Tamb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
aaa-017186
2.0
I
S
(A)
1.5
1.0
0.5
0
T = 150 °C
j
T = 25 °C
j
0
0.4
0.8
1.2
1.6
V
(V)
SD
VGS = 0 V
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 18. Duty cycle definition
©
PMDXB550UNE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
25 March 2015
9 / 15
Nexperia
PMDXB550UNE
30 V, dual N-channel Trench MOSFET
12. Package outline
DFN1010B-6: plastic thermal enhanced ultra thin small outline package; no leads;
6 terminals; body: 1.1 x 1.0 x 0.37 mm
SOT1216
visible depend upon
used manufacturing
technology (6x)
e
e
pin 1
b (6x)
index area
1
2
3
L (6x)
E
(2x)
E
1
6
5
4
D
A
1
D
1
(2x)
e
1
e
1
A
0
1 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A
b
D
D
1
E
E
e
e
1
L
1
1
min 0.34
0.15 1.05 0.32 0.95 0.22
0.125
nom
max
mm
0.37
0.18 1.10 0.35 1.00 0.25 0.35 0.275 0.155
0.205
0.40 0.04 0.23 1.15 0.40 1.05 0.30
Note
1. Dimension A is including plating thickness.
sot1216_po
References
Outline
version
IEC
European
projection
Issue date
JEDEC
JEITA
13-03-05
13-03-06
SOT1216
Fig. 19. Package outline DFN1010B-6 (SOT1216)
©
PMDXB550UNE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
25 March 2015
10 / 15
Nexperia
PMDXB550UNE
30 V, dual N-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of DFN1010B-6 package
SOT1216
0.9
0.35
0.35
0.15 0.2 (6x) 0.15
0.25
0.35
1.3 1.2 0.5
0.35
0.6 1.1
0.25
0.3 (6x)
1
1.35
solder land
solder land plus solder paste
occupied area
solder resist
Dimensions in mm
13-03-06
Issue date
sot1216_fr
14-07-28
Fig. 20. Reflow soldering footprint for DFN1010B-6 (SOT1216)
©
PMDXB550UNE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
25 March 2015
11 / 15
Nexperia
PMDXB550UNE
30 V, dual N-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMDXB550UNE v.1
20150325
Product data sheet
-
-
©
PMDXB550UNE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
25 March 2015
12 / 15
Nexperia
PMDXB550UNE
30 V, dual N-channel Trench MOSFET
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use in automotive applications — This Nexperia
product has been qualified for use in automotive
Product
[short] data
sheet
Production
This document contains the product
specification.
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
15.2 Definitions
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
short data sheet, the full data sheet shall prevail.
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
15.3 Disclaimers
Terms and conditions of commercial sale — Nexperia
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
©
PMDXB550UNE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
25 March 2015
13 / 15
Nexperia
PMDXB550UNE
30 V, dual N-channel Trench MOSFET
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PMDXB550UNE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
25 March 2015
14 / 15
Nexperia
PMDXB550UNE
30 V, dual N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................3
Thermal characteristics .........................................4
Characteristics .......................................................6
Test information .....................................................9
Package outline ................................................... 10
Soldering .............................................................. 11
Revision history ...................................................12
3
4
5
6
7
8
9
10
11
12
13
14
15
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
15.1
15.2
15.3
15.4
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 25 March 2015
©
PMDXB550UNE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
25 March 2015
15 / 15
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