PMEG200G10ELR [NEXPERIA]
200 V, 1 A Silicon Germanium (SiGe) rectifierProduction;
| 型号： | PMEG200G10ELR |
| 厂家： | 
Nexperia |
| 描述： | 200 V, 1 A Silicon Germanium (SiGe) rectifierProduction |
| 文件： | 总14页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMEG200G10ELR
200 V, 1 A Silicon Germanium (SiGe) rectifier
28 July 2020
Product data sheet
1. General description
Silicon Germanium (SiGe) rectifier encapsulated in a CFP3 (SOD123W) small and flat lead
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
Features
Benefits
•
•
•
•
•
•
Low forward voltage and low Qrr
•
•
•
Excellent efficiency
Extraordinary safe operating area
Minimal impact on Electro-Magnetic Compatibility (EMC)
allowing simplified certification
Extremely low leakage current
Thermal stability up to 175 °C junction temperature
Fast and smooth switching
Low parasitic capacitance
AEC-Q101 qualified
3. Applications
•
High-efficiency power conversion
•
•
•
•
Automotive LED lighting
Engine control unit
Server power supply
Base station power supply
•
•
Reverse polarity protection
OR-ing
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF(AV)
average forward
current
δ = 0.5; square wave; f = 20 kHz; Tsp
167 °C
≤
-
-
1
A
VR
VF
IR
reverse voltage
forward voltage
reverse current
Tj = 25 °C
-
-
-
-
-
200
880
30
V
IF = 1 A; Tj = 25 °C; pulsed
VR = 200 V; Tj = 25 °C; pulsed
VR = 200 V; Tj = 150 °C; pulsed
[1]
[1]
[1]
805
0.2
15
mV
nA
µA
150
[1] Very short pulse, in order to maintain a stable junction temperature.
Nexperia
PMEG200G10ELR
200 V, 1 A Silicon Germanium (SiGe) rectifier
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
cathode
Simplified outline
Graphic symbol
K
A
1
2
A
K
2
anode
006aab040
CFP3 (SOD123W)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMEG200G10ELR
CFP3
plastic, surface mounted package; 2 terminals; 2.6 mm x 1.7 mm SOD123W
x 1 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
PMEG200G10ELR
LJ
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Attention: Stress above one of these maximum
values may cause irreversible damage to the device.
Symbol
VR
Parameter
Conditions
Min
Max
200
1.4
1
Unit
V
reverse voltage
forward current
Tj = 25 °C
-
-
-
IF
δ = 1; Tsp ≤ 164 °C
A
IF(AV)
average forward current δ = 0.5; square wave; f = 20 kHz; Tsp
167 °C
≤
A
IFSM
Ptot
non-repetitive peak
forward current
tp = 8.3 ms; half sine wave; Tj(init) = 25 °C
-
40
A
total power dissipation
Tamb ≤ 25 °C
[1]
[2]
-
0.68
1.15
175
175
175
W
-
W
Tj
junction temperature
ambient temperature
storage temperature
-
°C
°C
°C
Tamb
Tstg
-55
-65
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
©
PMEG200G10ELR
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
28 July 2020
2 / 14
Nexperia
PMEG200G10ELR
200 V, 1 A Silicon Germanium (SiGe) rectifier
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
220
130
18
Unit
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
[3]
-
-
-
-
-
-
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Soldering point of cathode tab.
aaa-030858
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.50
0.33
0.20
0.25
0.10
0.05
0.01
10
0.02
0
1
10
-3
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-030859
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.50
0.33
0.20
0.25
0.10
10
0.05
0.01
0.02
0
1
10
-3
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for cathode 1 cm2
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMEG200G10ELR
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Nexperia B.V. 2020. All rights reserved
Product data sheet
28 July 2020
3 / 14
Nexperia
PMEG200G10ELR
200 V, 1 A Silicon Germanium (SiGe) rectifier
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)R
reverse breakdown
voltage
IR = 1 mA; pulsed; Tj = 25 °C
[1]
200
-
-
V
VF
forward voltage
IF = 0.1 A; Tj = 25 °C; pulsed
IF = 0.5 A; Tj = 25 °C; pulsed
IF = 0.7 A; Tj = 25 °C; pulsed
IF = 1 A; Tj = 25 °C; pulsed
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
-
-
-
-
-
-
-
-
-
-
-
-
665
760
780
805
890
660
0.2
2.5
15
740
840
860
880
980
760
30
mV
mV
mV
mV
mV
mV
nA
µA
µA
pF
IF = 1 A; Tj = -40 °C; pulsed
IF = 1 A; Tj = 125 °C; pulsed
VR = 200 V; Tj = 25 °C; pulsed
VR = 200 V; Tj = 125 °C; pulsed
VR = 200 V; Tj = 150 °C; pulsed
VR = 1 V; f = 1 MHz; Tj = 25 °C
VR = 10 V; f = 1 MHz; Tj = 25 °C
IR
reverse current
25
150
-
Cd
trr
diode capacitance
29
12
-
pF
reverse recovery time IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A;
step recovery Tj = 25 °C
17
-
ns
reverse recovery time dIF/dt = 100 A/µs; IF = 1 A; VR = 30 V;
-
-
-
-
34
1
-
-
-
-
ns
A
ramp recovery
Tj = 25 °C
IRM
peak reverse recovery
current
Qrr
reverse recovery
charge
19
885
nC
mV
VFRM
peak forward recovery IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C
voltage
[1] Very short pulse, in order to maintain a stable junction temperature.
©
PMEG200G10ELR
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Nexperia B.V. 2020. All rights reserved
Product data sheet
28 July 2020
4 / 14
Nexperia
PMEG200G10ELR
200 V, 1 A Silicon Germanium (SiGe) rectifier
aaa-030860
aaa-030861
-4
10
10
10
10
10
10
10
I
R
(1)
(2)
I
F
(A)
(A)
-5
-6
-7
-8
-9
1
(3)
-1
10
10
10
10
(4)
-2
-3
-4
-10
10
(5)
(2)
(4)
(6)
(1) (3)
(5)
-11
10
0
0.4
0.8
1.2
0
25
50
100
150
200
V
(V)
V (V)
F
R
pulsed condition
(1) Tj = 175 °C
(2) Tj = 150 °C
(3) Tj = 125 °C
(4) Tj = 85 °C
(5) Tj = 25 °C
(6) Tj = -40 °C
pulsed condition
(1) Tj = 175 °C
(2) Tj = 150 °C
(3) Tj = 125 °C
(4) Tj = 85 °C
(5) Tj = 25 °C
Fig. 4. Reverse current as a function of reverse
voltage; typical values
Fig. 3. Forward current as a function of forward
voltage; typical values
aaa-030862
aaa-030863
50
1.0
C
d
(pF)
P
F(AV)
(W)
(4)
40
0.8
(3)
30
20
10
0
0.6
0.4
0.2
0
(2)
(1)
0
40
80
120
160
200
0
0.5
1.0
1.5
V
(V)
I
(A)
F(AV)
R
f = 1 MHz; Tamb = 25 °C
Tj = 175 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
Fig. 5. Diode capacitance as a function of reverse
voltage; typical values
(4) δ = 1; DC
Fig. 6. Average forward power dissipation as a
function of average forward current; typical
values
©
PMEG200G10ELR
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Nexperia B.V. 2020. All rights reserved
Product data sheet
28 July 2020
5 / 14
Nexperia
PMEG200G10ELR
200 V, 1 A Silicon Germanium (SiGe) rectifier
aaa-030864
aaa-030865
12
1.5
(1)
(2)
P
I
R(AV)
(mW)
F(AV)
(A)
(1)
(2)
(3)
8
1.0
(3)
(4)
(4)
4
0.5
0
0
0
40
80
120
160
200
0
50
100
150
200
(°C)
V
(V)
T
R
amb
Tj = 175 °C
(1) δ = 1; DC
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
FR4 PCB, standard footprint
Tj = 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 7. Average reverse power dissipation as a
function of reverse voltage; typical values
Fig. 8. Average forward current as a function of
ambient temperature; typical values
aaa-030866
aaa-030867
1.5
1.5
(1)
(1)
I
I
F(AV)
(A)
F(AV)
(A)
(2)
(2)
1.0
1.0
(3)
(4)
(3)
(4)
0.5
0.5
0
0
0
50
100
150
200
(°C)
0
50
100
150
200
T
T
sp
(°C)
amb
FR4 PCB, mounting pad for cathode 1 cm2
Tj = 175 °C
Tj = 175 °C
(1) δ = 1; DC
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 10. Average forward current as a function of solder
point temperature; typical values
Fig. 9. Average forward current as a function of
ambient temperature; typical values
©
PMEG200G10ELR
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Nexperia B.V. 2020. All rights reserved
Product data sheet
28 July 2020
6 / 14
Nexperia
PMEG200G10ELR
200 V, 1 A Silicon Germanium (SiGe) rectifier
aaa-030868
aaa-030869
250
250
V
V
R
R
(V)
(V)
200
200
150
100
50
150
100
50
0
0
0
50
100
150
200
0
50
100
150
200
T (°C)
j
T (°C)
j
FR4 PCB, standard footprint
Rth = 220 K/W
FR4 PCB, mounting pad for cathode 1 cm2
Rth = 130 K/W
Fig. 11. Derated maximum reverse voltage as a function Fig. 12. Derated maximum reverse voltage as a function
of junction temperature; typical values
of junction temperature; typical values
aaa-030870
250
V
R
(V)
200
150
100
50
0
0
50
100
150
200
T (°C)
j
Soldering point of cathode tab
Rth = 18 K/W
Fig. 13. Derated maximum reverse voltage as a function of junction temperature; typical values
©
PMEG200G10ELR
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Nexperia B.V. 2020. All rights reserved
Product data sheet
28 July 2020
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Nexperia
PMEG200G10ELR
200 V, 1 A Silicon Germanium (SiGe) rectifier
11. Test information
I
F
I
R(meas)
time
I
R
006aad022
t
rr
Fig. 14. Reverse recovery definition; step recovery
dl
F
I
F
dt
t
rr
time
25 %
100 %
Q
rr
I
R
I
RM
003aac562
Fig. 15. Reverse recovery definition; ramp recovery
I
F
time
V
F
V
FRM
V
F
time
001aab912
Fig. 16. Forward recovery definition
©
PMEG200G10ELR
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Nexperia B.V. 2020. All rights reserved
Product data sheet
28 July 2020
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Nexperia
PMEG200G10ELR
200 V, 1 A Silicon Germanium (SiGe) rectifier
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV)=IM×δ with IM defined as peak current
IRMS=IF(AV) at DC, and IRMS=IM×√δ
with IRMS defined as RMS current.
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
1.9
1.5
1.1
0.9
1
0.6
0.3
3.7 2.8
3.3 2.4
2
1.05
0.75
0.22
0.10
Dimensions in mm
08-11-06
Fig. 18. Package outline CFP3 (SOD123W)
©
PMEG200G10ELR
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Nexperia B.V. 2020. All rights reserved
Product data sheet
28 July 2020
9 / 14
Nexperia
PMEG200G10ELR
200 V, 1 A Silicon Germanium (SiGe) rectifier
13. Soldering
Footprint information for reflow soldering of CFP3 package
SOD123W
4.4
2.9
2.8
2.1 1.6
1.1 1.2 1.4
1.1
1.2
1.4
recommended stencil thickness: 0.1 mm
occupied area
solder land
solder resist
solder paste
Dimensions in mm
17-06-09
20-02-28
Issue date
sod123w_fr
Fig. 19. Reflow soldering footprint for CFP3 (SOD123W)
©
PMEG200G10ELR
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Nexperia B.V. 2020. All rights reserved
Product data sheet
28 July 2020
10 / 14
Nexperia
PMEG200G10ELR
200 V, 1 A Silicon Germanium (SiGe) rectifier
Wave soldering footprint information
SOD123W
8.3
4.8
1.8
2.4
3.5
2.55
(2×)
(2×)
3.0 (2×)
3.15 (2×)
occupied area
solder resist
solder lands
dummy track (solder resist and Cu free)
Dimensions in mm
17-06-06
Issue date
sod123w_fw
17-06-07
Fig. 20. Wave soldering footprint for CFP3 (SOD123W)
14. Mounting
This device is sensitive to Electro Static Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST
61340-5, JESD625-A or equivalent standards.
©
PMEG200G10ELR
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
28 July 2020
11 / 14
Nexperia
PMEG200G10ELR
200 V, 1 A Silicon Germanium (SiGe) rectifier
15. Revision history
Table 8. Revision history
Data sheet ID
Release date
20200728
Data sheet status
Change notice Supersedes
PMEG200G10ELR v.1
Product data sheet
-
-
©
PMEG200G10ELR
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
28 July 2020
12 / 14
Nexperia
PMEG200G10ELR
200 V, 1 A Silicon Germanium (SiGe) rectifier
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
16. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
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customer’s applications and products using Nexperia products in order to
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Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
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Notwithstanding any damages that customer might incur for any reason
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to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
©
PMEG200G10ELR
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Nexperia B.V. 2020. All rights reserved
Product data sheet
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13 / 14
Nexperia
PMEG200G10ELR
200 V, 1 A Silicon Germanium (SiGe) rectifier
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 3
10. Characteristics............................................................4
11. Test information..........................................................8
12. Package outline.......................................................... 9
13. Soldering................................................................... 10
14. Mounting....................................................................11
15. Revision history........................................................12
16. Legal information......................................................13
© Nexperia B.V. 2020. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 28 July 2020
©
PMEG200G10ELR
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Nexperia B.V. 2020. All rights reserved
Product data sheet
28 July 2020
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