PMEG6010CPA [NEXPERIA]

1 A low V_F dual MEGA Schottky barrier rectifierProduction;
PMEG6010CPA
型号: PMEG6010CPA
厂家: Nexperia    Nexperia
描述:

1 A low V_F dual MEGA Schottky barrier rectifierProduction

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Important notice  
Dear Customer,  
On 7 February 2017 the former NXP Standard Product business became a new company with the  
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS  
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable  
application markets  
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use  
the references to Nexperia, as shown below.  
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,  
use http://www.nexperia.com  
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use  
salesaddresses@nexperia.com (email)  
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on  
the version, as shown below:  
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights  
reserved  
Should be replaced with:  
- © Nexperia B.V. (year). All rights reserved.  
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail  
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and  
understanding,  
Kind regards,  
Team Nexperia  
PMEG6010CPA  
1 A low VF dual MEGA Schottky barrier rectifier  
Rev. 1 — 25 August 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in  
common cathode configuration with an integrated guard ring for stress protection,  
encapsulated in a SOT1061 leadless small Surface-Mounted Device (SMD) plastic  
package with medium power capability.  
1.2 Features and benefits  
„ Average forward current: IF(AV) 1 A  
„ Reverse voltage: VR 60 V  
„ Low forward voltage  
„ Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity  
„ Leadless small SMD plastic package with medium power capability  
„ AEC-Q101 qualified  
1.3 Applications  
„ Low voltage rectification  
„ High efficiency DC-to-DC conversion  
„ Switch Mode Power Supply (SMPS)  
„ Reverse polarity protection  
„ Low power consumption applications  
„ Battery chargers for mobile equipment  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tj = 25 °C unless otherwise specified.  
Symbol  
Per diode  
IF(AV)  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
average forward  
current  
square wave;  
δ = 0.5; f = 20 kHz  
[1]  
Tamb 110 °C  
Tsp 140 °C  
-
-
-
-
-
-
1
A
-
1
A
VR  
VF  
IR  
reverse voltage  
forward voltage  
reverse current  
-
60  
540  
100  
V
IF = 1 A  
490  
33  
mV  
μA  
VR = 60 V  
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.  
PMEG6010CPA  
NXP Semiconductors  
1 A low VF dual MEGA Schottky barrier rectifier  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
Simplified outline  
Graphic symbol  
anode diode 1  
anode diode 2  
common cathode  
3
3
2
3
1
2
1
2
Transparent top view  
006aaa438  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
PMEG6010CPA HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061  
no leads; three terminals; body 2 × 2 × 0.65 mm  
4. Marking  
Table 4.  
Marking codes  
Type number  
Marking code  
PMEG6010CPA  
AP  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Per diode  
VR  
Parameter  
Conditions  
Min  
Max  
Unit  
reverse voltage  
Tj 25 °C  
-
60  
V
IF(AV)  
average forward  
current  
square wave;  
δ = 0.5; f = 20 kHz  
[1]  
[2]  
Tamb 110 °C  
Tsp 140 °C  
-
-
-
1
1
7
A
A
A
IFRM  
IFSM  
repetitive peak  
forward current  
tp 1 ms; δ ≤ 0.25  
non-repetitive peak  
forward current  
square wave;  
tp = 8 ms  
-
9
A
PMEG6010CPA  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 25 August 2010  
2 of 15  
PMEG6010CPA  
NXP Semiconductors  
1 A low VF dual MEGA Schottky barrier rectifier  
Table 5.  
Limiting values …continued  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
Per device, one diode loaded  
[3][4]  
[3][5]  
[1][3]  
Ptot  
total power dissipation Tamb 25 °C  
-
500  
mW  
mW  
mW  
°C  
-
960  
-
1800  
150  
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
Tamb  
Tstg  
55  
65  
+150  
+150  
°C  
°C  
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.  
[2] Tj = 25 °C prior to surge.  
[3] Reflow soldering is the only recommended soldering method.  
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.  
6. Thermal characteristics  
Table 6.  
Symbol  
Per device, one diode loaded  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
[1][2]  
[3]  
Rth(j-a)  
thermal resistance from  
junction to ambient  
in free air  
-
-
-
-
-
-
-
-
250  
130  
70  
K/W  
K/W  
K/W  
K/W  
[4]  
[5]  
[6]  
Rth(j-sp)  
thermal resistance from  
junction to solder point  
12  
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse  
power losses PR are a significant part of the total power losses.  
[2] Reflow soldering is the only recommended soldering method.  
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.  
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.  
[6] Soldering point of cathode tab.  
PMEG6010CPA  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 25 August 2010  
3 of 15  
PMEG6010CPA  
NXP Semiconductors  
1 A low VF dual MEGA Schottky barrier rectifier  
006aac439  
3
10  
Z
th(j-a)  
duty cycle =  
1
(K/W)  
0.75  
2
0.5  
10  
0.33  
0.2  
0.25  
0.1  
0.05  
0.01  
10  
0.02  
0
1
10  
3  
2  
1  
2
3
10  
10  
1
10  
10  
10  
t
p
(s)  
FR4 PCB, standard footprint  
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
006aac440  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle =  
1
2
10  
0.75  
0.5  
0.33  
0.2  
0.25  
0.1  
0
10  
0.05  
0.02  
0.01  
1
10  
3  
2  
1  
2
3
10  
10  
1
10  
10  
10  
t
p
(s)  
FR4 PCB, mounting pad for cathode 1 cm2  
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
PMEG6010CPA  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 25 August 2010  
4 of 15  
PMEG6010CPA  
NXP Semiconductors  
1 A low VF dual MEGA Schottky barrier rectifier  
006aac441  
2
10  
duty cycle =  
1
0.75  
Z
th(j-a)  
(K/W)  
0.5  
0.25  
0.1  
0.33  
0.2  
10  
0.05  
0.02  
0.01  
0
1
10  
3  
2  
1  
2
3
10  
10  
1
10  
10  
10  
t
p
(s)  
Ceramic PCB, Al2O3, standard footprint  
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
7. Characteristics  
Table 7.  
Characteristics  
Tj = 25 °C unless otherwise specified.  
Symbol  
Per diode  
VF  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
forward voltage  
reverse current  
diode capacitance  
IF = 100 mA  
IF = 1 A  
-
-
-
-
325  
490  
2
-
mV  
mV  
μA  
540  
-
IR  
VR = 10 V  
VR = 60 V  
f = 1 MHz  
VR = 1 V  
33  
100  
μA  
Cd  
-
-
-
120  
40  
-
-
-
pF  
pF  
ns  
VR = 10 V  
[1]  
trr  
reverse recovery time  
40  
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.  
PMEG6010CPA  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 25 August 2010  
5 of 15  
PMEG6010CPA  
NXP Semiconductors  
1 A low VF dual MEGA Schottky barrier rectifier  
006aac442  
006aac443  
2  
10  
10  
R
(A)  
(1)  
(2)  
I
I
F
(A)  
3  
4  
5  
6  
7  
8  
9  
10  
1
(1)  
(2)  
10  
10  
10  
10  
10  
10  
1  
10  
10  
10  
10  
(3)  
(3) (4) (5)  
2  
3  
4  
(4)  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
0
20  
40  
60  
V
(V)  
V (V)  
R
F
(1) Tj = 150 °C  
(2) Tj = 125 °C  
(3) Tj = 85 °C  
(4) Tj = 25 °C  
(5) Tj = 40 °C  
(1) Tj = 125 °C  
(2) Tj = 85 °C  
(3) Tj = 25 °C  
(4) Tj = 40 °C  
Fig 4. Forward current as a function of forward  
voltage; typical values  
Fig 5. Reverse current as a function of reverse  
voltage; typical values  
006aac444  
250  
C
d
(pF)  
200  
150  
100  
50  
0
0
20  
40  
60  
V
R
(V)  
f = 1 MHz; Tamb = 25 °C  
Fig 6. Diode capacitance as a function of reverse voltage; typical values  
PMEG6010CPA  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 25 August 2010  
6 of 15  
PMEG6010CPA  
NXP Semiconductors  
1 A low VF dual MEGA Schottky barrier rectifier  
006aac445  
006aac446  
0.8  
0.75  
(4)  
P
F(AV)  
(W)  
P
R(AV)  
(W)  
(3)  
0.6  
0.4  
0.2  
0.0  
0.50  
(1)  
(2)  
(3)  
(2)  
(1)  
0.25  
(4)  
0.00  
0.0  
0.5  
1.0  
1.5  
0
20  
40  
60  
I
(A)  
V (V)  
R
F(AV)  
Tj = 150 °C  
Tj = 125 °C  
(1) δ = 0.1  
(2) δ = 0.2  
(3) δ = 0.5  
(4) δ = 1  
(1) δ = 1  
(2) δ = 0.9  
(3) δ = 0.8  
(4) δ = 0.5  
Fig 7. Average forward power dissipation as a  
function of average forward current; typical  
values  
Fig 8. Average reverse power dissipation as a  
function of reverse voltage; typical values  
006aac447  
006aac448  
1.5  
1.5  
(1)  
(1)  
I
I
F(AV)  
(A)  
F(AV)  
(A)  
(2)  
(2)  
1.0  
1.0  
(3)  
(4)  
(3)  
(4)  
0.5  
0.0  
0.5  
0.0  
0
25  
50  
75  
100  
125  
150  
(°C)  
175  
0
25  
50  
75  
100  
125  
150  
T (°C)  
amb  
175  
T
amb  
FR4 PCB, standard footprint  
FR4 PCB, mounting pad for cathode 1 cm2  
Tj = 150 °C  
Tj = 150 °C  
(1) δ = 1; DC  
(1) δ = 1; DC  
(2) δ = 0.5; f = 20 kHz  
(3) δ = 0.2; f = 20 kHz  
(4) δ = 0.1; f = 20 kHz  
(2) δ = 0.5; f = 20 kHz  
(3) δ = 0.2; f = 20 kHz  
(4) δ = 0.1; f = 20 kHz  
Fig 9. Average forward current as a function of  
ambient temperature; typical values  
Fig 10. Average forward current as a function of  
ambient temperature; typical values  
PMEG6010CPA  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 25 August 2010  
7 of 15  
PMEG6010CPA  
NXP Semiconductors  
1 A low VF dual MEGA Schottky barrier rectifier  
006aac449  
006aac450  
1.5  
1.5  
(1)  
(1)  
I
I
F(AV)  
(A)  
F(AV)  
(A)  
(2)  
(2)  
1.0  
1.0  
(3)  
(4)  
(3)  
0.5  
0.0  
0.5  
(4)  
0.0  
0
25  
50  
75  
100  
125  
150  
(°C)  
175  
0
25  
50  
75  
100  
125  
150  
T (°C)  
sp  
175  
T
amb  
Ceramic PCB, Al2O3, standard footprint  
Tj = 150 °C  
Tj = 150 °C  
(1) δ = 1; DC  
(1) δ = 1; DC  
(2) δ = 0.5; f = 20 kHz  
(3) δ = 0.2; f = 20 kHz  
(4) δ = 0.1; f = 20 kHz  
(2) δ = 0.5; f = 20 kHz  
(3) δ = 0.2; f = 20 kHz  
(4) δ = 0.1; f = 20 kHz  
Fig 11. Average forward current as a function of  
ambient temperature; typical values  
Fig 12. Average forward current as a function of  
solder point temperature; typical values  
PMEG6010CPA  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 25 August 2010  
8 of 15  
PMEG6010CPA  
NXP Semiconductors  
1 A low VF dual MEGA Schottky barrier rectifier  
8. Test information  
t
r
t
p
t
D.U.T.  
10 %  
I
F
+ I  
F
t
rr  
R
S
= 50 Ω  
SAMPLING  
OSCILLOSCOPE  
t
R
= 50 Ω  
V = V + I × R  
S
i
R
F
(1)  
90 %  
V
R
mga881  
input signal  
output signal  
(1) IR = 1 mA  
Fig 13. Reverse recovery time test circuit and waveforms  
t
t
1
2
P
duty cycle δ =  
t
2
t
1
t
006aaa812  
Fig 14. Duty cycle definition  
The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are  
calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current,  
IRMS = IF(AV) at DC, and IRMS = IM  
× δ with IRMS defined as RMS current.  
8.1 Quality information  
This product has been qualified in accordance with the Automotive Electronics Council  
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is  
suitable for use in automotive applications.  
PMEG6010CPA  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 25 August 2010  
9 of 15  
PMEG6010CPA  
NXP Semiconductors  
1 A low VF dual MEGA Schottky barrier rectifier  
9. Package outline  
1.3  
0.65  
max  
0.35  
0.25  
0.45  
0.35  
1
2
1.05  
0.95  
2.1  
1.9  
1.1  
0.9  
0.3  
0.2  
3
1.6  
1.4  
2.1  
1.9  
Dimensions in mm  
09-11-12  
Fig 15. Package outline SOT1061  
10. Packing information  
Table 8.  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number  
Package  
Description  
Packing quantity  
3000  
PMEG6010CPA SOT1061  
4 mm pitch, 8 mm tape and reel  
-115  
[1] For further information and the availability of packing methods, see Section 14.  
PMEG6010CPA  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 25 August 2010  
10 of 15  
PMEG6010CPA  
NXP Semiconductors  
1 A low VF dual MEGA Schottky barrier rectifier  
11. Soldering  
2.1  
1.3  
0.5 (2×)  
0.4 (2×)  
0.5 (2×) 0.6 (2×)  
1.05  
0.6  
0.55  
2.3  
0.25  
1.1  
1.2  
0.25  
0.25  
0.4  
0.5  
1.6  
1.7  
Dimensions in mm  
solder paste = solder lands  
solder resist  
occupied area  
sot1061_fr  
Reflow soldering is the only recommended soldering method.  
Fig 16. Reflow soldering footprint SOT1061  
PMEG6010CPA  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 25 August 2010  
11 of 15  
PMEG6010CPA  
NXP Semiconductors  
1 A low VF dual MEGA Schottky barrier rectifier  
12. Revision history  
Table 9.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
PMEG6010CPA v.1  
20100825  
Product data sheet  
-
-
PMEG6010CPA  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 25 August 2010  
12 of 15  
PMEG6010CPA  
NXP Semiconductors  
1 A low VF dual MEGA Schottky barrier rectifier  
13. Legal information  
13.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
malfunction of an NXP Semiconductors product can reasonably be expected  
13.2 Definitions  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
13.3 Disclaimers  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
PMEG6010CPA  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 25 August 2010  
13 of 15  
PMEG6010CPA  
NXP Semiconductors  
1 A low VF dual MEGA Schottky barrier rectifier  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
13.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
14. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
PMEG6010CPA  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 1 — 25 August 2010  
14 of 15  
PMEG6010CPA  
NXP Semiconductors  
1 A low VF dual MEGA Schottky barrier rectifier  
15. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9  
Quality information . . . . . . . . . . . . . . . . . . . . . . 9  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10  
Packing information . . . . . . . . . . . . . . . . . . . . 10  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12  
3
4
5
6
7
8
8.1  
9
10  
11  
12  
13  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
13.1  
13.2  
13.3  
13.4  
14  
15  
Contact information. . . . . . . . . . . . . . . . . . . . . 14  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2010.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 25 August 2010  
Document identifier: PMEG6010CPA  

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