PMMT591A [NEXPERIA]

PNP BISS transistorProduction;


型号：	PMMT591A
厂家：	Nexperia
描述：	PNP BISS transistorProduction PC 开关光电二极管晶体管
文件：	总8页 (文件大小：312K)
中文：	中文翻译
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DISCRETE SEMICONDUCTORS

DATA SHEET

PMMT591A

PNP BISS transistor

Product data sheet

2004 Jan 13

Supersedes data of 2001 Jun 11

NXP Semiconductors

Product data sheet

PNP BISS transistor

PMMT591A

FEATURES

PINNING

• High current (max. 1 A)

DESCRIPTION

• Low collector-emitter saturation voltage ensures

reduced power consumption.

base

emitter

collector

APPLICATIONS

• Battery powered units where high current and low power

consumption are important.

handbook, halfpage

DESCRIPTION

PNP BISS (Breakthrough In Small Signal) transistor in a

SOT23 plastic package. NPN complement: PMMT491A.

MARKING

TYPE NUMBER

PMMT591A

MARKING CODE⁽¹⁾

Top view

MAM256

9B*

Note

1. * = p : Made in Hong Kong.

* = t : Made in Malaysia.

* = W : Made in China.

Fig.1 Simplified outline (SOT23) and symbol.

ORDERING INFORMATION

TYPE

PACKAGE

DESCRIPTION

plastic surface mounted package; 3 leads

NUMBER

NAME

VERSION

PMMT591A

−

SOT23

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

V_CBO

PARAMETER

CONDITIONS

open emitter

MIN.

MAX.

UNIT

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

peak base current

−

−40

−5

V_CEO

V_EBO

I_C

open base

open collector

−1

I_CM

I_BM

−2

−1

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

operating ambient temperature

T_amb≤ 25 °C; note 1

250

+150

150

+150

°C

−65

−

°C

T_amb

−65

°C

Note

1. Transistor mounted on an FR4 printed-circuit board.

2004 Jan 13

NXP Semiconductors

Product data sheet

PNP BISS transistor

PMMT591A

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

thermal resistance from junction to ambient

CONDITIONS

note 1

VALUE

500

UNIT

R_th(j-a)

K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

T_amb= 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

I_E= 0; V_CB= −30 V

MIN. MAX. UNIT

I_CBO

I_CEO

I_EBO

h_FE

collector cut-off current

emitter cut-off current

DC current gain

−

−100 nA

I_B= 0; V_CE= −30 V

I_C= 0; V_EB= −5 V

V_CE= −5 V; note 1

I_C= −1 mA

300

−

I_C= −100 mA

300 800

I_C= −500 mA

250

160

−

I_C= −1 A

V_CEsat

collector-emitter saturation voltage

note 1

I_C= −100 mA; I_B= −1 mA

I_C= −500 mA; I_B= −20 mA

I_C= −1 A; I_B= −100 mA

I_C= −1 A; I_B= −50 mA; note 1

V_CE= −5 V; I_C= −1 A; note 1

I_E= I_e= 0; V_CB= −10 V; f = 1 MHz

I_C= −50 mA; V_CE= −10 V; f = 100 MHz

−

−200 mV

−350 mV

−500 mV

−

V_BEsat

V_BE

C_c

base-emitter saturation voltage

base-emitter voltage

−

−1.1

−1

−

collector capacitance

transition frequency

−

MHz

f_T

150

Note

1. Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

2004 Jan 13

NXP Semiconductors

Product data sheet

PNP BISS transistor

PMMT591A

MLD639

MLD638

1200

−10

handbook, halfpage

(V)

(1)

800

(1)

−1

(2)

(3)

(2)

(3)

400

−1

−10

−1

−10

(mA)

−1

−10

(mA)

V_CE= −5 V.

(1) T_amb= 150 °C.

(2) T_amb= 25 °C.

(3) T_amb= −55 °C.

(1) T_amb= −55 °C.

(2) T_amb= 25 °C.

(3) T_amb= 150 °C.

Fig.2 DC current gain as a function of collector

current; typical values.

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

MLD640

MLD641

−10

300

handbook, halfpage

CEsat

(mV)

(MHz)

(1)

−10

200

(3)

(2)

−10

100

−1

−10

−200

−400

−600

−800

(mA)

−1000

(mA)

I_C/I_B= 10.

(1)

(2) T_amb= 25 °C.

(3) _amb= −55 °C.

T_amb= 150 °C.

V_CE= −10 V.

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

Fig.5 Transition frequency as a function of

collector current; typical values.

2004 Jan 13

NXP Semiconductors

Product data sheet

PNP BISS transistor

PMMT591A

PACKAGE OUTLINE

Plastic surface-mounted package; 3 leads

SOT23

w M

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

max.

1.1

0.9

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

2.5

2.1

0.45

0.15

0.55

0.45

0.1

1.9

0.95

0.2

0.1

REFERENCES

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

JEDEC

JEITA

04-11-04

06-03-16

SOT23

TO-236AB

2004 Jan 13

NXP Semiconductors

Product data sheet

PNP BISS transistor

PMMT591A

DATA SHEET STATUS

DOCUMENT

STATUS⁽¹⁾

PRODUCT

STATUS⁽²⁾

DEFINITION

Objective data sheet

Development

This document contains data from the objective specification for product

development.

Preliminary data sheet

Product data sheet

Qualification

Production

This document contains data from the preliminary specification.

This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DISCLAIMERS

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequences of use of such information.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any inconsistency or conflict between information

in this document and such terms and conditions, the latter

will prevail.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this document, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for acceptance or the grant, conveyance or

implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Suitability for use ⎯ NXP Semiconductors products are

not designed, authorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in personal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at

the customer’s own risk.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national authorities.

Quick reference data ⎯ The Quick reference data is an

extract of the product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaustive or legally binding.

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

2004 Jan 13

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimers. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Contact information

For additional information please visit: http://www.nxp.com

For sales offices addresses send e-mail to: salesaddresses@nxp.com

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

R75/05/pp7

Date of release: 2004 Jan 13

Document order number: 9397 750 12529

PMMT591A [NEXPERIA]

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