PMN30XPA [NEXPERIA]
20 V, P-channel Trench MOSFETProduction;
| 型号： | PMN30XPA |
| 厂家： | 
Nexperia |
| 描述： | 20 V, P-channel Trench MOSFETProduction |
| 文件： | 总15页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMN30XPA
20 V, P-channel Trench MOSFET
20 April 2020
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-
Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
Low threshold voltage
•
•
•
•
Extended temperature range Tj = 175 °C
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
3. Applications
•
•
•
•
Relay driver
High-speed line driver
High-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
-20
12
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-12
-
V
ID
VGS = -4.5 V; Tamb = 25 °C
[1]
-5.2
A
Static characteristics
RDSon drain-source on-state
resistance
VGS = -4.5 V; ID = -5.2 A; Tj = 25 °C
-
30
38
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Nexperia
PMN30XPA
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
drain
Simplified outline
Graphic symbol
6
5
4
3
D
D
G
S
D
D
D
2
drain
G
3
gate
1
2
4
source
drain
S
SC-74; TSOP6 (SOT457)
5
017aaa094
6
drain
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMN30XPA
SC-74; TSOP6 plastic, surface-mounted package (SC-74; TSOP6); 6 leads
SOT457
7. Marking
Table 4. Marking codes
Type number
Marking code
PMN30XPA
3T
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PMN30XPA
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Product data sheet
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Nexperia
PMN30XPA
20 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
-20
12
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-12
V
ID
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
-
-5.2
-3.3
-21
660
1.7
A
-
A
IDM
Ptot
peak drain current
-
A
total power dissipation
[2]
[1]
-
mW
W
W
°C
°C
°C
-
Tsp = 25 °C
-
7.5
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
175
175
175
Tamb
Tstg
Source-drain diode
IS
source current
Tamb = 25 °C
HBM
[1]
[3]
-
-
-1.7
500
A
V
ESD maximum rating
VESD
electrostatic discharge
voltage
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
Tj(init) = 25 °C; ID = -1.5 A; DUT in
-
15.5
mJ
source avalanche energy avalanche (unclamped)
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
aaa-030119
aaa-030120
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
-75
0
-75
25
125
225
25
125
225
T
(°C)
T
(°C)
amb
amb
Fig. 1. Normalized total power dissipation as a
function of ambient temperature
Fig. 2. Normalized continuous drain current as a
function of ambient temperature
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PMN30XPA
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Nexperia B.V. 2020. All rights reserved
Product data sheet
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Nexperia
PMN30XPA
20 V, P-channel Trench MOSFET
aaa-031116
2
-10
I
D
Limit R
= V /I
DS
DSon
D
(A)
t
t
= 10 µs
p
p
-10
= 100 µs
-1
-1
t
= 1 ms
p
-10
2
DC; T
= 25 °C; drain mounting pad 6 cm
amb
t
t
= 10 ms
p
p
DC; T = 25 °C
sp
-2
-3
-4
-10
-10
-10
= 100 ms
-1
2
-10
-1
-10
-10
V
(V)
DS
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
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PMN30XPA
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Nexperia B.V. 2020. All rights reserved
Product data sheet
20 April 2020
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Nexperia
PMN30XPA
20 V, P-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
195
78
Max
225
90
Unit
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
-
-
-
Rth(j-sp)
thermal resistance from
junction to solder point
15
20
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
aaa-020639
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
0.5
10
0.33
0.2
0.25
0.1
0.05
0.01
10
0.02
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-020640
2
10
duty cycle = 1
0.75
0.5
Z
th(j-a)
(K/W)
0.33
0.2
0.25
0.1
0.02
0
0.05
0.01
10
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMN30XPA
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Nexperia B.V. 2020. All rights reserved
Product data sheet
20 April 2020
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Nexperia
PMN30XPA
20 V, P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
V
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
-0.6
-0.95 -1.3
IDSS
IGSS
drain leakage current
gate leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; ID = -5.2 A; Tj = 25 °C
VGS = -8 V; ID = -5.2 A; Tj = 175 °C
VGS = -4.5 V; ID = -5.2 A; Tj = 25 °C
VGS = -2.5 V; ID = -3 A; Tj = 25 °C
VDS = -10 V; ID = -4.9 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-1
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
S
-
-100
100
33
53
38
62
-
-
RDSon
drain-source on-state
resistance
25
40
30
45
18
gfs
forward
transconductance
RG
gate resistance
f = 1 MHz
-
6
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = -10 V; ID = -5 A; VGS = -4.5 V;
Tj = 25 °C
-
-
-
-
-
-
11
16
-
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
1.9
3.4
-
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
1039
124
110
-
Coss
Crss
-
reverse transfer
capacitance
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -10 V; ID = -5 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
8
-
-
-
-
ns
ns
ns
ns
30
40
23
turn-off delay time
fall time
Source-drain diode
VSD
trr
source-drain voltage
IS = -1.7 A; VGS = 0 V; Tj = 25 °C
-
-
-
-0.8
13
3
-1.2
V
reverse recovery time IS = -1.5 A; dIS/dt = 100 A/µs;
-
-
ns
nC
VGS = 0 V; VDS = -10 V; Tj = 25 °C
Qr
recovered charge
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PMN30XPA
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Nexperia B.V. 2020. All rights reserved
Product data sheet
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Nexperia
PMN30XPA
20 V, P-channel Trench MOSFET
aaa-030438
aaa-030439
-3
-20
-10
- 4.5 V - 3.0 V
- 2.5 V
I
D
(A)
I
D
(A)
-16
- 2.2 V
min
typ
max
-4
-10
-10
-10
-12
-8
-4
0
-5
-6
V
= - 1.8 V
GS
-3
0
-1
-2
-4
0
-0.5
-1.0
-1.5
-2.0
V
DS
(V)
V
(V)
GS
Tj = 25 °C
Tj = 25 °C; VDS = -5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Subthreshold drain current as a function of
gate-source voltage
aaa-030440
aaa-030441
150
150
- 1.8 V
- 2.0 V
- 2.2 V
R
DSon
R
DSon
100
100
- 2.5 V
T = 175 °C
j
50
50
- 3.0 V
V
= - 4.5 V
GS
T = 25 °C
j
0
0
0
-4
-8
-12
-16
-20
0
-4
-8
-12
I
(A)
V
(V)
GS
D
Tj = 25 °C
ID = -4.9 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
©
PMN30XPA
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Nexperia B.V. 2020. All rights reserved
Product data sheet
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Nexperia
PMN30XPA
20 V, P-channel Trench MOSFET
aaa-030442
aaa-030443
-20
2.0
1.5
1.0
0.5
0
I
D
(A)
a
-16
-12
-8
-4
0
T = 175 °C
j
T = 25 °C
j
-60
0
60
120
180
-1
-2
-3
0
T (°C)
V
(V)
GS
j
VDS = -5 V
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-030444
aaa-030445
4
-2.0
10
V
GS(th)
(V)
C
(pF)
-1.5
-1.0
-0.5
0
C
iss
3
2
10
max
typ
C
C
oss
rss
10
min
10
-1
-10
2
-60
0
60
120
180
-1
-10
-10
T (°C)
j
V
(V)
DS
ID = -250 μA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
PMN30XPA
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Nexperia B.V. 2020. All rights reserved
Product data sheet
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PMN30XPA
20 V, P-channel Trench MOSFET
aaa-030446
-5
V
DS
V
GS
(V)
I
D
-4
-3
-2
-1
0
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
Q
GS
Q
GD
G(tot)
Q
aaa-030347
Fig. 15. Gate charge waveform definitions
4
8
12
0
Q
G
(nC)
ID = -5 A; VDS = -10 V; Tj = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-030447
-8
I
S
(A)
-6
-4
-2
0
T = 175 °C
j
T = 25 °C
j
0
-0.4
-0.8
-1.2
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
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PMN30XPA
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Nexperia B.V. 2020. All rights reserved
Product data sheet
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PMN30XPA
20 V, P-channel Trench MOSFET
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
©
PMN30XPA
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Nexperia B.V. 2020. All rights reserved
Product data sheet
20 April 2020
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Nexperia
PMN30XPA
20 V, P-channel Trench MOSFET
12. Package outline
Plastic, surface-mounted package (SC-74; TSOP6); 6 leads
SOT457
D
B
E
A
X
y
H
E
v
M
A
6
5
4
Q
A
pin 1
index
A
1
c
L
p
1
2
3
detail X
b
p
e
w
M B
0
1
2 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A
b
c
D
E
e
H
E
L
p
Q
v
w
y
1
p
max 1.1
nom
0.1
0.40 0.26 3.1 1.7
3.0 0.6 0.33
2.5 0.2 0.23
mm
0.95
0.2 0.2 0.1
0.9 0.013 0.25 0.10 2.7 1.3
min
sot457_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
SC-74
06-03-16
18-11-27
SOT457
Fig. 18. Package outline SC-74; TSOP6 (SOT457)
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PMN30XPA
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Nexperia B.V. 2020. All rights reserved
Product data sheet
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PMN30XPA
20 V, P-channel Trench MOSFET
13. Soldering
3.45
1.95
0.55
(6×)
solder lands
solder resist
0.45
(6×)
0.95
0.95
3.3 2.825
solder paste
occupied area
0.7
Dimensions in mm
(6×)
0.8
(6×)
2.4
sot457_fr
Fig. 19. Reflow soldering footprint for SC-74; TSOP6 (SOT457)
5.3
1.5
(4×)
solder lands
1.475
5.05
solder resist
occupied area
0.45
(2×)
1.475
Dimensions in mm
preferred transport
direction during soldering
1.45
(6×)
2.85
sot457_fw
Fig. 20. Wave soldering footprint for SC-74; TSOP6 (SOT457)
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PMN30XPA
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Product data sheet
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PMN30XPA
20 V, P-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20200420
Data sheet status
Change notice
Supersedes
PMN30XPA v.1
Product data sheet
-
-
©
PMN30XPA
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Product data sheet
20 April 2020
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Nexperia
PMN30XPA
20 V, P-channel Trench MOSFET
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
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and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
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modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
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has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
©
PMN30XPA
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Product data sheet
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PMN30XPA
20 V, P-channel Trench MOSFET
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................6
11. Test information........................................................10
12. Package outline........................................................ 11
13. Soldering................................................................... 12
14. Revision history........................................................13
15. Legal information......................................................14
© Nexperia B.V. 2020. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 20 April 2020
©
PMN30XPA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
20 April 2020
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