PMN40ENE [NEXPERIA]
30 V, N-channel Trench MOSFETProduction;型号: | PMN40ENE |
厂家: | Nexperia |
描述: | 30 V, N-channel Trench MOSFETProduction |
文件: | 总16页 (文件大小:722K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PMN40ENE
30 V, N-channel Trench MOSFET
24 May 2016
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Logic-level compatible
Very fast switching
Enhanced power dissipation capability of 1240 mW
ElectroStatic Discharge (ESD) protection > 1 kV HBM
•
•
•
•
•
3. Applications
LED driver
•
•
•
•
Power management
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
30
Unit
V
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
-20
-
20
V
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 4.5 A; Tj = 25 °C
[1]
5.7
A
Static characteristics
RDSon drain-source on-state
-
30
38
mΩ
resistance
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[1]
Nexperia
PMN40ENE
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
6
5
4
3
D
1
2
3
4
5
6
D
D
G
S
D
D
drain
drain
gate
G
1
2
source
drain
drain
TSOP6 (SOT457)
S
017aaa255
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMN40ENE
TSOP6
plastic surface-mounted package (TSOP6); 6 leads
SOT457
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMN40ENE
H4
©
PMN40ENE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
24 May 2016
2 / 16
Nexperia
PMN40ENE
30 V, N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-20
20
V
ID
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
[1]
-
5.7
A
-
4.5
A
-
2.9
A
IDM
Ptot
peak drain current
-
18
A
total power dissipation
[2]
[1]
-
530
1.24
4.46
150
150
150
mW
W
W
°C
°C
°C
-
Tsp = 25 °C
-
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
Tamb
Tstg
Source-drain diode
IS source current
Tamb = 25 °C
[1]
-
1.2
A
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[1]
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
017aaa123
017aaa124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
©
PMN40ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
24 May 2016
3 / 16
Nexperia
PMN40ENE
30 V, N-channel Trench MOSFET
aaa-020809
2
10
I
D
(A)
Limit R
= V /I
DS
t
=
DSon
D
p
10 µs
10
100 µs
1 ms
1
10 ms
DC; T = 25 °C
sp
100 ms
-1
10
10
DC; T
= 25 °C;
drain mounting pad 6 cm
amb
2
-2
-1
2
10
1
10
10
V
(V)
DS
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
©
PMN40ENE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
24 May 2016
4 / 16
Nexperia
PMN40ENE
30 V, N-channel Trench MOSFET
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
205
88
Max
235
101
63
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
[2]
-
-
-
-
in free air; t ≤ 5 s
55
Rth(j-sp)
thermal resistance
from junction to solder
point
24
28
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
aaa-020616
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.25
0.1
2
10
0.33
0.2
0.05
0.02
0
10
0.01
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMN40ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
24 May 2016
5 / 16
Nexperia
PMN40ENE
30 V, N-channel Trench MOSFET
aaa-020617
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.5
0.33
0.25
0.2
0.1
0.05
10
0.02
0.01
0
1
10
- 3
- 2
10
- 1
10
2
3
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMN40ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
24 May 2016
6 / 16
Nexperia
PMN40ENE
30 V, N-channel Trench MOSFET
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
1
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS=VGS; Tj = 25 °C
voltage
1.4
2
IDSS
IGSS
drain leakage current
gate leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 4.5 A; Tj = 25 °C
VGS = 10 V; ID = 4.5 A; Tj = 150 °C
VGS = 4.5 V; ID = 3.3 A; Tj = 25 °C
VDS = 10 V; ID = 2 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
1
µA
µA
µA
µA
µA
nA
nA
mΩ
mΩ
mΩ
S
-
10
-10
1
-
-
-
-1
-
200
-200
38
60
70
-
-
RDSon
drain-source on-state
resistance
30
47
44
10.7
gfs
forward
transconductance
RG
gate resistance
Tj = 25 °C; f = 1 MHz
-
0.5
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = 15 V; ID = 3.2 A; VGS = 10 V;
Tj = 25 °C
-
-
-
-
-
-
5.6
0.76
1.1
294
42
11
-
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
-
Coss
Crss
-
reverse transfer
capacitance
33
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 15 V; ID = 3.2 A; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
4.6
14.7
9.1
3
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD
source-drain voltage
IS = 1.2 A; VGS = 0 V; Tj = 25 °C
-
0.8
1.2
V
©
PMN40ENE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
24 May 2016
7 / 16
Nexperia
PMN40ENE
30 V, N-channel Trench MOSFET
aaa-020810
aaa-021517
-3
-4
-5
-6
20
10
D
V
= 4.5 V
GS
I
D
I
4 V
(A)
(A)
15
10
3.5 V
3 V
10
5
min
typ
max
10
10
2.5 V
4
0
0
1
2
3
5
0
0.5
1.0
1.5
2.0
2.5
(V)
V
(V)
V
DS
GS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
aaa-020812
aaa-020813
0.4
0.6
2.5 V
3 V
3.3 V
R
DSon
(Ω)
R
DSon
(Ω)
V
= 4 V
2.8 V
3.5 V
GS
0.3
0.2
0.1
0.0
0.4
0.2
0.0
4.5 V
10 V
T = 150 °C
j
T = 25 °C
j
0
5
10
15
20
0
2
4
6
8
10
(V)
I
(A)
V
GS
D
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values of gate-source voltage; typical values
ID = 4.5 A
©
PMN40ENE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
24 May 2016
8 / 16
Nexperia
PMN40ENE
30 V, N-channel Trench MOSFET
aaa-020814
aaa-020815
20
2
1.5
1
I
a
D
(A)
15
10
5
0.5
0
T = 150 °C
j
T = 25 °C
j
0
0
1
2
3
4
5
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
aaa-021518
aaa-020817
3
3
10
V
GS(th)
(V)
C
iss
C
(pF)
2
1
0
max
C
C
oss
2
10
typ
rss
min
10
10
-1
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
PMN40ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
24 May 2016
9 / 16
Nexperia
PMN40ENE
30 V, N-channel Trench MOSFET
aaa-020818
10
V
DS
V
GS
(V)
I
D
8
6
4
2
0
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
Q
Q
GS
GD
Q
G(tot)
003aaa508
Fig. 15. MOSFET transistor: Gate charge waveform
definitions
0
2
4
6
Q
G
(nC)
ID = 4.5 A; VDS = 15 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-020819
4
I
S
(A)
3
2
1
0
T = 150 °C
j
T = 25 °C
j
0.0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
©
PMN40ENE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
24 May 2016
10 / 16
Nexperia
PMN40ENE
30 V, N-channel Trench MOSFET
12. Package outline
3.1
2.7
1.1
0.9
6
5
4
0.6
0.2
3.0
2.5 1.3
1.7
pin 1 index
1
2
3
0.26
0.10
0.40
0.25
0.95
1.9
Dimensions in mm
14-10-03
Fig. 18. Package outline TSOP6 (SOT457)
13. Soldering
3.45
1.95
0.55
(6×)
solder lands
solder resist
0.45
(6×)
0.95
3.3 2.825
0.95
solder paste
occupied area
0.7
Dimensions in mm
(6×)
0.8
(6×)
2.4
sot457_fr
Fig. 19. Reflow soldering footprint for TSOP6 (SOT457)
©
PMN40ENE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
24 May 2016
11 / 16
Nexperia
PMN40ENE
30 V, N-channel Trench MOSFET
5.3
1.5
(4×)
solder lands
1.475
1.475
solder resist
occupied area
0.45
(2×)
5.05
Dimensions in mm
preferred transport
direction during soldering
1.45
(6×)
2.85
sot457_fw
Fig. 20. Wave soldering footprint for TSOP6 (SOT457)
©
PMN40ENE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
24 May 2016
12 / 16
Nexperia
PMN40ENE
30 V, N-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMN40ENE v.1
20160526
Product data sheet
-
-
©
PMN40ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
24 May 2016
13 / 16
Nexperia
PMN40ENE
30 V, N-channel Trench MOSFET
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Nexperia does not accept any liability related to any default,
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
15.3 Disclaimers
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
©
PMN40ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
24 May 2016
14 / 16
Nexperia
PMN40ENE
30 V, N-channel Trench MOSFET
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
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may be subject to export control regulations. Export might require a prior
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the product is not suitable for automotive use. It is neither qualified nor
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Nexperia accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty
of the product for such automotive applications, use and specifications, and
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between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PMN40ENE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
24 May 2016
15 / 16
Nexperia
PMN40ENE
30 V, N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................3
Thermal characteristics .........................................5
Characteristics .......................................................7
Test information ...................................................10
Package outline ................................................... 11
Soldering .............................................................. 11
Revision history ...................................................13
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Legal information .................................................14
Data sheet status ............................................... 14
Definitions ...........................................................14
Disclaimers .........................................................14
Trademarks ........................................................ 15
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© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 24 May 2016
©
PMN40ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
24 May 2016
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