PMPB08R6EN [NEXPERIA]
30 V, N-channel Trench MOSFETProduction;
| 型号： | PMPB08R6EN |
| 厂家： | 
Nexperia |
| 描述： | 30 V, N-channel Trench MOSFETProduction |
| 文件： | 总15页 (文件大小：320K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMPB08R6EN
30 V, N-channel Trench MOSFET
13 October 2020
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•
Logic-level compatible
•
•
•
•
Very fast switching
Trench Superjunction Technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-20
-
20
V
ID
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 11 A; Tj = 25 °C
[1]
15
A
Static characteristics
RDSon drain-source on-state
resistance
-
8.6
10.5
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Nexperia
PMPB08R6EN
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
drain
Simplified outline
Graphic symbol
D
D
G
S
D
D
D
S
D
1
6
5
4
2
drain
7
2
G
3
gate
3
8
4
source
drain
mbb076
S
5
Transparent top view
DFN2020M-6 (SOT1220-2)
6
drain
7
drain
8
source
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMPB08R6EN
DFN2020M-6 plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals; body 2 x 2 x 0.65 mm
SOT1220-2
7. Marking
Table 4. Marking codes
Type number
Marking code
ZB
PMPB08R6EN
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PMPB08R6EN
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Nexperia B.V. 2020. All rights reserved
Product data sheet
13 October 2020
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Nexperia
PMPB08R6EN
30 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-20
20
V
ID
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C; t ≤ 5 s
[1]
[1]
[1]
-
15
A
-
11
A
-
7
A
IDM
Ptot
peak drain current
-
44
A
total power dissipation
[1]
[1]
-
3.8
1.9
12.5
150
150
150
W
W
W
°C
°C
°C
Tamb = 25 °C
-
Tsp = 25 °C
-
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
Tamb
Tstg
Source-drain diode
IS source current
Tamb = 25 °C
[1]
-
1.9
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
aaa-030137
aaa-030138
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
-75
0
-75
-25
25
75
125
175
(°C)
-25
25
75
125
175
(°C)
T
T
amb
amb
Fig. 1. Normalized total power dissipation as a
function of ambient temperature
Fig. 2. Normalized continous drain current as a
function of ambient temperature
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Product data sheet
13 October 2020
3 / 15
Nexperia
PMPB08R6EN
30 V, N-channel Trench MOSFET
aaa-032244
2
10
Limit R
= V /I
DS
DSon
D
t
p
= 10 µs
I
D
(A)
10
t
p
= 100 µs
t
= 1 ms
p
DC; T
= 25 °C;
drain mounting pad 6 cm
amb
1
2
t
p
= 10 ms
DC; T = 25 °C
sp
t
p
= 100 ms
-1
10
10
-2
-1
2
10
1
10
10
V
(V)
DS
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
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PMPB08R6EN
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Nexperia B.V. 2020. All rights reserved
Product data sheet
13 October 2020
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Nexperia
PMPB08R6EN
30 V, N-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
223
57
Max
256
66
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
[2]
-
-
-
-
in free air; t ≤ 5 s
29
33
Rth(j-sp)
thermal resistance from
junction to solder point
6
10
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
aaa-026869
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
2
10
0.33
0.25
0.2
0.1
0.05
10
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-026870
2
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.5
0.33
0.2
0.25
0.1
10
0.05
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
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PMPB08R6EN
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Nexperia B.V. 2020. All rights reserved
Product data sheet
13 October 2020
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Nexperia
PMPB08R6EN
30 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
1
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
1.5
2
IDSS
IGSS
drain leakage current
gate leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 11 A; Tj = 25 °C
VGS = 10 V; ID = 11 A; Tj = 150 °C
VGS = 4.5 V; ID = 9.1 A; Tj = 25 °C
VDS = 5 V; ID = 11 A; Tj = 25 °C
-
-
-
-
-
-
-
-
1
µA
nA
nA
mΩ
mΩ
mΩ
S
-
100
-100
10.5
17
-
RDSon
drain-source on-state
resistance
8.6
14
10.5
34
14
gfs
forward
-
transconductance
RG
gate resistance
f = 1 MHz
-
1.6
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = 15 V; ID = 6 A; VGS = 10 V;
Tj = 25 °C
-
-
-
-
-
-
13.7
1.7
20.6
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
-
-
-
-
1.7
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
840
155
65
Coss
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 15 V; ID = 5 A; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
9
-
-
-
-
ns
ns
ns
ns
10
17
9
turn-off delay time
fall time
Source-drain diode
VSD
source-drain voltage
IS = 1.9 A; VGS = 0 V; Tj = 25 °C
-
0.75
1.2
V
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PMPB08R6EN
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Nexperia B.V. 2020. All rights reserved
Product data sheet
13 October 2020
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Nexperia
PMPB08R6EN
30 V, N-channel Trench MOSFET
aaa-032245
017aaa555
-3
-4
-5
-6
40
10
D
10 V
I
D
I
(A)
(A)
4.5 V
30
3.0 V
10
min
typ
max
2.8 V
20
10
0
10
10
2.5 V
= 2.2 V
V
3
GS
V
0
1
2
4
0.0
0.5
1.0
1.5
2.0
2.5
(V)
(V)
V
DS
GS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
aaa-032246
aaa-032247
40
40
2.8 V
R
DS(on)
R
DS(on)
3.0 V
30
30
3.5 V
4.5 V
20
10
0
20
10
0
T = 150 °C
j
V
= 10 V
GS
T = 25 °C
j
0
10
20
30
40
0
4
8
12
16
V
20
(V)
I
D
(A)
GS
Tj = 25 °C
ID = 11 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
©
PMPB08R6EN
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Nexperia B.V. 2020. All rights reserved
Product data sheet
13 October 2020
7 / 15
Nexperia
PMPB08R6EN
30 V, N-channel Trench MOSFET
aaa-032248
aaa-032249
40
2.0
1.5
1.0
0.5
0
I
a
D
(A)
30
T = 150 °C
j
20
10
0
T = 25 °C
j
0
1
2
3
4
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS = 5 V
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
017aaa560
017aaa561
4
2.5
10
V
GS(th)
(V)
C
(pF)
2.0
1.5
1.0
0.5
0.0
max
typ
3
10
C
iss
min
C
C
oss
2
10
rss
10
-1
10
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
PMPB08R6EN
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Nexperia B.V. 2020. All rights reserved
Product data sheet
13 October 2020
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Nexperia
PMPB08R6EN
30 V, N-channel Trench MOSFET
017aaa562
10
V
(V)
V
GS
DS
8
I
D
6
4
2
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
0
0
Q
Q
GS
GD
5
10
15
Q
G
(nC)
Q
G(tot)
003aaa508
ID = 5 A; VDS = 15 V; Tamb = 25 °C
Fig. 15. Gate charge waveform definitions
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-032250
8
I
S
(A)
6
4
2
0
T = 150 °C
j
T = 25 °C
j
0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
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PMPB08R6EN
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Nexperia B.V. 2020. All rights reserved
Product data sheet
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Nexperia
PMPB08R6EN
30 V, N-channel Trench MOSFET
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
©
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Nexperia B.V. 2020. All rights reserved
Product data sheet
13 October 2020
10 / 15
Nexperia
PMPB08R6EN
30 V, N-channel Trench MOSFET
12. Package outline
DFN2020M-6: plastic thermal enhanced ultra thin small outline package; no leads;
6 terminals; body 2 x 2 x 0.65 mm
SOT1220-2
*(6x)
B
E
A
pin 1
index area
A
D
A
1
detail X
u
C
2x
u
C
2x
seating plane
C
v
w
B
A
C
E
(6x)
L
2
y
1
y
C
C
C
4
5
6
3
2
D
2
b (6x)
K
e
1
v
B
A
C
C
e
w
e
2
D
1
e
1
pin 1
index area
Gx45°
X
E
1
0
2 mm
G
scale
e
Dimensions (mm are the original dimensions)
Unit
A
A
b
D
2
D
D
E
2
E
E
e
e
2
K
L
u
v
w
y
y
1
1
1
2
1
2
1
min 0.55
0
0.25
1.0
1.1
1.2
0.31
0.36
0.41
1.1 0.6
1.2 0.7 0.65 0.71 0.28
1.3 0.8
0.2 0.20
0.15
(ref)
nom
max
mm
0.60 0.02 0.30
0.65 0.04 0.35
0.25 0.05 0.1 0.05 0.05 0.05
0.30
Note
1. Dimension A is including plating thickness.
2. * Visible depend upon used manufacturing technology.
sot1220-2_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
- - -
JEITA
20-03-31
20-04-01
SOT1220-2
Fig. 18. Package outline DFN2020M-6 (SOT1220-2)
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PMPB08R6EN
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Nexperia B.V. 2020. All rights reserved
Product data sheet
13 October 2020
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Nexperia
PMPB08R6EN
30 V, N-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of DFN2020M-6 package
SOT1220-2
2.6
1.3
1.2
0.2
0.5
0.4
0.3
0.45
0.05
0.45 0.35 0.25
0.2 0.3
0.4
0.2 1.1 1.2
2.3
0.65
0.21 0.11
0.36 0.46 0.56
0.7
0.8
0.9
recommended stencil thickness: 0.1 mm
occupied area
solder resist
solder paste
solder land
Dimensions in mm
20-03-17
20-06-17
Issue date
sot1220-2_fr
Fig. 19. Reflow soldering footprint for DFN2020M-6 (SOT1220-2)
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PMPB08R6EN
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Product data sheet
13 October 2020
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Nexperia
PMPB08R6EN
30 V, N-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20201013
Data sheet status
Change notice
Supersedes
PMPB08R6EN v.1
Product data sheet
-
-
©
PMPB08R6EN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
13 October 2020
13 / 15
Nexperia
PMPB08R6EN
30 V, N-channel Trench MOSFET
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
15. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
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and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
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or problem which is based on any weakness or default in the customer’s
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[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Trademarks
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction
of an Nexperia product can reasonably be expected to result in personal
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PMPB08R6EN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
13 October 2020
14 / 15
Nexperia
PMPB08R6EN
30 V, N-channel Trench MOSFET
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................6
11. Test information........................................................10
12. Package outline........................................................ 11
13. Soldering................................................................... 12
14. Revision history........................................................13
15. Legal information......................................................14
© Nexperia B.V. 2020. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 13 October 2020
©
PMPB08R6EN
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
13 October 2020
15 / 15
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