PMPB100ENE [NEXPERIA]
30 V, N-channel MOSFETProduction;
| 型号： | PMPB100ENE |
| 厂家： | 
Nexperia |
| 描述： | 30 V, N-channel MOSFETProduction |
| 文件： | 总15页 (文件大小：316K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMPB100ENE
30 V, N-channel MOSFET
26 April 2018
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•
Extended temperature range Tj = 175 °C
•
•
•
•
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Tin-plated 100 % solderable side pads for optical solder inspection
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Trench MOSFET technology
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-20
-
20
V
ID
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 3.9 A; Tj = 25 °C
[1]
5.1
A
Static characteristics
RDSon drain-source on-state
resistance
-
54
72
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6cm2.
Nexperia
PMPB100ENE
30 V, N-channel MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
D
D
D
G
S
D
D
D
S
drain
drain
gate
1
6
5
4
2
7
2
3
3
G
8
4
source
drain
drain
drain
source
5
Transparent top view
DFN2020MD-6 (SOT1220)
S
6
017aaa255
7
8
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMPB100ENE
DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline SOT1220
package; no leads; 6 terminals
7. Marking
Table 4. Marking codes
Type number
Marking code
PMPB100ENE
3T
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PMPB100ENE
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Nexperia B.V. 2018. All rights reserved
Product data sheet
26 April 2018
2 / 15
Nexperia
PMPB100ENE
30 V, N-channel MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-20
20
V
ID
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
[1]
-
5.1
3.9
2.4
16
A
-
A
-
A
IDM
Ptot
peak drain current
-
A
total power dissipation
[1]
[1]
-
2
W
W
W
°C
°C
°C
Tamb = 25 °C; t ≤ 5 s
-
3.3
10
Tsp = 25 °C
-
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
175
175
175
Tamb
Tstg
Source Drain Diode
IS source current
Tamb = 25 °C
[1]
-
1.9
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6cm2.
aaa-026120
aaa-026121
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
-75
0
-75
25
125
225
25
125
225
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
©
PMPB100ENE
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Nexperia B.V. 2018. All rights reserved
Product data sheet
26 April 2018
3 / 15
Nexperia
PMPB100ENE
30 V, N-channel MOSFET
aaa-026680
2
10
I
D
(A)
Limit R
= V /I
DS
t
= 10 µs
DSon
D
p
10
100 µs
1
1 ms
DC; T = 25 °C
sp
10 ms
2
DC; T
= 25 °C; 6 cm
-1
100 ms
amb
10
10
-2
-1
2
10
1
10
10
V
(V)
DS
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
©
PMPB100ENE
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Nexperia B.V. 2018. All rights reserved
Product data sheet
26 April 2018
4 / 15
Nexperia
PMPB100ENE
30 V, N-channel MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
236
67
Max
272
77
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
[2]
-
-
-
-
in free air; t ≤ 5 s
36
45
Rth(j-sp)
thermal resistance
from junction to solder
point
12
15
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
aaa-026122
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.50
0.33
0.25
0.20
2
10
0.10
0.05
0.02
0.01
10
0
1
-2
-1
2
3
-3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-026123
2
10
duty cycle = 1
0.75
0.50
0.25
0.10
Z
th(j-a)
(K/W)
0.33
0.20
10
0.05
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMPB100ENE
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Nexperia B.V. 2018. All rights reserved
Product data sheet
26 April 2018
5 / 15
Nexperia
PMPB100ENE
30 V, N-channel MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
1
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
1.5
2.5
IDSS
IGSS
drain leakage current
gate leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 3.9 A; Tj = 25 °C
VGS = 10 V; ID = 3.9 A; Tj = 175 °C
VGS = 4.5 V; ID = 3.3 A; Tj = 25 °C
VDS = 10 V; ID = 3.9 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
1
µA
µA
µA
µA
µA
mΩ
mΩ
mΩ
S
-
10
-10
2
-
-
-
-2
RDSon
drain-source on-state
resistance
54
98
70
6.2
72
130
100
-
gfs
forward
transconductance
RG
gate resistance
f = 1 MHz
-
11.8
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = 15 V; ID = 3.9 A; VGS = 10 V;
Tj = 25 °C
-
-
-
-
-
-
3.5
0.4
0.8
157
34
5
-
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
-
Coss
Crss
-
reverse transfer
capacitance
27
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 15 V; ID = 3.9 A; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
3
-
-
-
-
ns
ns
ns
ns
19
15
8
turn-off delay time
fall time
Source-drain diode
VSD
source-drain voltage
IS = 1.9 A; VGS = 0 V; Tj = 25 °C
-
0.8
1.2
V
©
PMPB100ENE
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Nexperia B.V. 2018. All rights reserved
Product data sheet
26 April 2018
6 / 15
Nexperia
PMPB100ENE
30 V, N-channel MOSFET
aaa-026681
aaa-022260
-3
-4
-5
-6
16
10
D
I
D
V
GS
4.5 V
= 10 V
I
(A)
(A)
3.7 V
3.4 V
12
min
typ
max
10
8
4
0
3.0 V
2.7 V
10
10
0
1
2
3
4
0
1
2
3
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
aaa-026682
aaa-026683
300
300
2.7 V
3.0 V
3.4 V 3.7 V
R
R
DSon
(mΩ)
DSon
250
250
200
150
100
200
150
100
50
4.5 V
= 10 V
T = 175 °C
j
V
GS
50
0
T = 25 °C
j
0
0
4
8
12
16
0
4
8
12
16
V
20
I
(A)
(V)
GS
D
Tj = 25 °C
ID = 3.9 A
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
©
PMPB100ENE
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Nexperia B.V. 2018. All rights reserved
Product data sheet
26 April 2018
7 / 15
Nexperia
PMPB100ENE
30 V, N-channel MOSFET
aaa-026684
aaa-026685
16
2.0
1.5
1.0
0.5
0
I
a
D
(A)
12
T = 25 °C
j
T = 175 °C
j
8
4
0
0
1
2
3
4
5
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID x RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-026686
aaa-026687
3
3
10
V
GS(th)
(V)
max
C
(pF)
2
C
iss
2
typ
10
min
1
0
C
C
oss
rss
10
-1
10
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 250 µA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
PMPB100ENE
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Nexperia B.V. 2018. All rights reserved
Product data sheet
26 April 2018
8 / 15
Nexperia
PMPB100ENE
30 V, N-channel MOSFET
aaa-026688
10
V
DS
V
GS
(V)
I
D
8
6
V
V
GS(pl)
GS(th)
V
GS
4
Q
GS2
Q
GS1
2
0
Q
Q
GS
GD
G(tot)
Q
003aaa508
Fig. 15. Gate charge waveform definitions
0
1
2
3
4
Q
G
(nC)
VDS = 15 V; ID = 3.9 A; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-026689
10
I
S
(A)
8
6
4
2
0
T = 175 °C
j
T = 25 °C
j
0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
©
PMPB100ENE
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Nexperia B.V. 2018. All rights reserved
Product data sheet
26 April 2018
9 / 15
Nexperia
PMPB100ENE
30 V, N-channel MOSFET
12. Package outline
DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads;
6 terminals; body 2 x 2 x 0.65 mm
SOT1220
(8×)
pin 1
index area
B
A
D
E
X
A
A
y
1
1
detail X
solderable lead
end protrusion
max. 0.02 mm (6×)
C
L
p
y
E
2
C
D
2
4
5
3
2
J
1
e
J
bp (6×)
D
1
e
v
A B
1
6
pin 1
index area
E
1
0
2 mm
scale
e
Dimensions (mm are the original dimensions)
Unit bp
min 0.25 1.9 1.0
0.65 0.04 0.35 2.1 1.2
A
A
D
D
1
D
E
E
E
J
J
1
L
v
y
y
1
1
2
1
2
p
0.2 1.9 1.1 0.51
0.3 2.1 1.3 0.61
0.2
0.3
nom
max
mm
0.65 0.27 0.64
0.1 0.05 0.1
Note
1. Dimension A is including plating thickness.
sot1220_po
References
Outline
version
IEC
European
projection
Issue date
JEDEC
JEITA
12-04-23
12-04-30
SOT1220
Fig. 18. Package outline DFN2020MD-6 (SOT1220)
©
PMPB100ENE
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Nexperia B.V. 2018. All rights reserved
Product data sheet
26 April 2018
10 / 15
Nexperia
PMPB100ENE
30 V, N-channel MOSFET
13. Soldering
Footprint information for reflow soldering of DFN2020MD-6 package
SOT1220
0.33 (6×)
0.43 (6×)
0.53 (6×)
0.76
0.66
0.56
0.25 0.35 0.45
0.775
0.285
0.65
0.65
2.06
1.25
0.35 (6×)
1.35
1.05
0.25 (6×)
0.45 (6×)
0.9
1.1
1.2
0.935
0.935
2.5
solder land
solder land plus solder paste
solder paste deposit
occupied area
solder resist
Dimensions in mm
sot1220_fr
Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220)
©
PMPB100ENE
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Nexperia B.V. 2018. All rights reserved
Product data sheet
26 April 2018
11 / 15
Nexperia
PMPB100ENE
30 V, N-channel MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20180426
Data sheet status
Change notice
Supersedes
PMPB100ENE v.1
Product data sheet
-
-
©
PMPB100ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
26 April 2018
12 / 15
Nexperia
PMPB100ENE
30 V, N-channel MOSFET
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
15. Legal information
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Data sheet status
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction
of an Nexperia product can reasonably be expected to result in personal
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Document
status [1][2] status [3]
Product
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Product
[short] data
sheet
Production
This document contains the product
specification.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1] Please consult the most recently issued document before initiating or
completing a design.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Definitions
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
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liability in this respect.
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subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to the accuracy
or completeness of information included herein and shall have no liability for
the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
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modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
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full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
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Limited warranty and liability — Information in this document is believed
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In the event that customer uses the product for design-in and use in
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customer (a) shall use the product without Nexperia’ warranty of the product
for such automotive applications, use and specifications, and (b) whenever
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’ aggregate and cumulative liability towards customer
©
PMPB100ENE
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Product data sheet
26 April 2018
13 / 15
Nexperia
PMPB100ENE
30 V, N-channel MOSFET
customer uses the product for automotive applications beyond Nexperia’
specifications such use shall be solely at customer’s own risk, and (c)
customer fully indemnifies Nexperia for any liability, damages or failed
product claims resulting from customer design and use of the product for
automotive applications beyond Nexperia’ standard warranty and Nexperia’
product specifications.
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reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
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Notice: All referenced brands, product names, service names and
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©
PMPB100ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
26 April 2018
14 / 15
Nexperia
PMPB100ENE
30 V, N-channel MOSFET
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................6
11. Test information..........................................................9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information..................................................... 13
© Nexperia B.V. 2018. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 26 April 2018
©
PMPB100ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2018. All rights reserved
Product data sheet
26 April 2018
15 / 15
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