PMPB15XP [NEXPERIA]
12 V, single P-channel Trench MOSFETProduction;
| 型号： | PMPB15XP |
| 厂家： | 
Nexperia |
| 描述： | 12 V, single P-channel Trench MOSFETProduction |
| 文件： | 总15页 (文件大小：370K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
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PMPB15XP
12 V, single P-channel Trench MOSFET
22 November 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
1.5 kV ESD protection (human body model)
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
•
•
•
•
•
1.3 Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portable devices
Hard disk and computing power management
•
•
•
•
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
-12
Unit
V
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
-12
-
12
V
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; ID = -8.2 A; Tj = 25 °C
[1]
-11.8
A
Static characteristics
RDSon drain-source on-state
resistance
-
15
19
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
PMPB15XP
12 V, single P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
D
1
2
3
4
5
6
7
8
D
D
G
S
D
D
D
S
drain
drain
gate
1
6
5
4
7
2
3
Transparent top view
G
8
S
source
drain
drain
drain
source
017aaa257
DFN2020MD-6 (SOT1220)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMPB15XP
DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
SOT1220
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMPB15XP
1A
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
-12
Unit
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
V
V
A
A
A
A
W
VGS
-12
12
ID
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; Tamb = 25 °C
[1]
[1]
[1]
-
-
-
-
-
-11.8
-8.2
-5.2
-33
VGS = -4.5 V; Tamb = 100 °C
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
[1]
1.7
PMPB15XP
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Product data sheet
22 November 2012
2 / 14
NXP Semiconductors
PMPB15XP
12 V, single P-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
-
Max
3.5
Unit
W
Tamb = 25 °C; t ≤ 5 s
Tsp = 25 °C
[1]
-
12.5
150
150
150
W
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
°C
°C
°C
Tamb
Tstg
Source-drain diode
IS source current
Tamb = 25 °C
[1]
-
-1.9
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
017aaa123
017aaa124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
PMPB15XP
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Product data sheet
22 November 2012
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NXP Semiconductors
PMPB15XP
12 V, single P-channel Trench MOSFET
aaa-004171
2
-10
I
D
Limit R
= V /I
DS
DSon
D
t
= 100 µs
= 1 ms
(A)
p
-10
t
p
t
t
= 10 ms
p
p
-1
-1
DC; T = 25 °C
sp
= 100 ms
DC; T
= 25 °C;
2
amb
drain mounting pad 6 cm
-10
-2
-10
-2
-1
-10
2
-10
-1
-10
-10
V
(V)
DS
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
235
67
Max
270
74
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
[2]
-
-
-
-
in free air; t ≤ 5 s
33
36
Rth(j-sp)
thermal resistance
from junction to solder
point
5
10
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMPB15XP
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© NXP B.V. 2012. All rights reserved
Product data sheet
22 November 2012
4 / 14
NXP Semiconductors
PMPB15XP
12 V, single P-channel Trench MOSFET
017aaa542
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
2
10
0.33
0.25
0.2
0.1
0.05
0.02
10
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa543
3
10
Z
th(j-a)
(K/W)
2
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-12
-
-
V
V
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
-0.47 -0.68 -0.9
IDSS
drain leakage current
VDS = -12 V; VGS = 0 V; Tj = 25 °C
-
-
-
-
-1
µA
µA
VDS = -12 V; VGS = 0 V; Tj = 150 °C
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22 November 2012
-100
PMPB15XP
© NXP B.V. 2012. All rights reserved
Product data sheet
5 / 14
NXP Semiconductors
PMPB15XP
12 V, single P-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Typ
-
Max
-100
-100
19
Unit
nA
IGSS
gate leakage current
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -8.2 A; Tj = 25 °C
VGS = -4.5 V; ID = -8.2 A; Tj = 150 °C
VGS = -2.5 V; ID = -3.9 A; Tj = 25 °C
VGS = -1.8 V; ID = -3.9 A; Tj = 25 °C
VDS = -10 V; ID = -8.2 A; Tj = 25 °C
-
-
-
-
-
-
-
-
nA
RDSon
drain-source on-state
resistance
15
20
17
21
40
mΩ
mΩ
mΩ
mΩ
S
25
20
33
gfs
forward
-
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = -6 V; ID = -8.2 A; VGS = -4.5 V;
Tj = 25 °C
-
-
-
-
-
-
67
100
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
5.5
-
-
-
-
-
7.3
VDS = -6 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
2875
570
530
Coss
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -6 V; ID = -8.2 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
18
90
85
57
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD source-drain voltage
IS = -1.9 A; VGS = 0 V; Tj = 25 °C
-
-0.6
-1.2
V
aaa-004172
aaa-004173
-2
-25
-10
V
= -1.7 V
-4.5 V
-2.0 V
GS
I
D
I
D
(A)
-1.8 V
(A)
-20
-3
-4
-5
-6
-10
-1.6 V
-15
-10
-5
-1.5 V
min
typ
max
-10
-10
-10
-1.4 V
-1.3 V
-1.2 V
-3
0
0
-1
-2
-4
0.0
-0.4
-0.8
-1.2
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = -5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Subthreshold drain current as a function of
gate-source voltage
PMPB15XP
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Product data sheet
22 November 2012
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NXP Semiconductors
PMPB15XP
12 V, single P-channel Trench MOSFET
aaa-004174
aaa-004175
50
50
DSon
R
R
DSon
(mΩ)
V
= -1.5 V
-1.7 V
-1.8 V
-1.9 V
GS
(mΩ)
40
40
-1.6 V
30
20
10
0
30
20
10
0
-2.0 V
-2.1 V
T = 150 °C
j
-2.5 V
-4.5 V
T = 25 °C
j
0
-5
-10
-15
-20
-25
0
-1
-2
-3
-4
-5
I
(A)
V
(V)
GS
D
Tj = 25 °C
ID = -8 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
aaa-004176
aaa-004177
-25
1.4
I
D
a
(A)
-20
1.2
1.0
0.8
0.6
-15
-10
-5
T = 150 °C
j
T = 25 °C
j
0
0.0
-0.5
-1.0
-1.5
-2.0
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PMPB15XP
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Product data sheet
22 November 2012
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NXP Semiconductors
PMPB15XP
12 V, single P-channel Trench MOSFET
aaa-004178
aaa-004179
4
-1.2
10
V
GS(th)
(V)
C
C
(pF)
iss
max
-0.8
-0.4
0.0
typ
C
C
oss
3
10
min
rss
2
10
-1
2
-60
0
60
120
180
-10
-1
-10
-10
T (°C)
j
V
(V)
DS
ID = -0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
aaa-004180
-4.5
GS
V
DS
V
I
D
(V)
-3.0
V
GS(pl)
V
GS(th)
GS
V
-1.5
0.0
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
Fig. 15. Gate charge waveform definitions
0
5
10
15
20
25
30
(nC)
35
Q
G
ID = -8 A; VDS = -6 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
PMPB15XP
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Product data sheet
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NXP Semiconductors
PMPB15XP
12 V, single P-channel Trench MOSFET
aaa-004181
-2.0
S
I
(A)
-1.5
-1.0
-0.5
0.0
T = 150 °C
T = 25 °C
j
j
0.0
-0.2
-0.4
-0.6
-0.8
V
(V)
DS
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
9. Package outline
0.51
0.61
0.2
0.3
0.2
0.3
3
4
5
6
0.25
0.35
1.9
2.1
2
1
1.0
1.2
1.1
1.3
0.65
1.9
2.1
Dimensions in mm
12-04-30
Fig. 18. Package outline DFN2020MD-6 (SOT1220)
PMPB15XP
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Product data sheet
22 November 2012
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NXP Semiconductors
PMPB15XP
12 V, single P-channel Trench MOSFET
10. Soldering
Footprint information for reflow soldering of DFN2020MD-6 package
SOT1220
0.33 (6×)
0.43 (6×)
0.53 (6×)
0.76
0.66
0.56
0.25 0.35 0.45
0.775
0.285
0.65
2.06
1.25
0.35 (6×)
0.65
1.35
1.05
0.25 (6×)
0.45 (6×)
0.9
1.1
1.2
0.935
0.935
2.5
solder land
solder land plus solder paste
solder paste deposit
occupied area
solder resist
Dimensions in mm
sot1220_fr
Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220)
PMPB15XP
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Product data sheet
22 November 2012
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NXP Semiconductors
PMPB15XP
12 V, single P-channel Trench MOSFET
11. Revision history
Table 8.
Revision history
Data sheet ID
PMPB15XP v.3
Modifications:
PMPB15XP v.2
PMPB15XP v.1
Release date
Data sheet status
Change notice
Supersedes
20121122
Product data sheet
-
PMPB15XP v.2
Table 7 "Characteristics": RDSon at VGS = -1.8 V corrected.
•
20120719
20120706
Product data sheet
-
-
PMPB15XP v.1
-
Preliminary data sheet
PMPB15XP
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Product data sheet
22 November 2012
11 / 14
NXP Semiconductors
PMPB15XP
12 V, single P-channel Trench MOSFET
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
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Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
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Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
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the accuracy or completeness of information included herein and shall have
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
PMPB15XP
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Product data sheet
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NXP Semiconductors
PMPB15XP
12 V, single P-channel Trench MOSFET
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TOPTriac, TrenchMOS, TriMedia and UCODE — are trademarks of NXP
B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMPB15XP
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© NXP B.V. 2012. All rights reserved
Product data sheet
22 November 2012
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NXP Semiconductors
PMPB15XP
12 V, single P-channel Trench MOSFET
13. Contents
1
Product profile ....................................................... 1
General description .............................................. 1
Features and benefits ...........................................1
Applications ..........................................................1
Quick reference data ............................................ 1
1.1
1.2
1.3
1.4
2
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................5
Test information .....................................................9
Package outline ..................................................... 9
Soldering .............................................................. 10
Revision history ...................................................11
3
4
5
6
7
8
9
10
11
12
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
12.1
12.2
12.3
12.4
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 22 November 2012
PMPB15XP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
22 November 2012
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